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Continuity

The document discusses the continuity equations for charge carriers in semiconductor physics, detailing the relationships between generation and recombination rates. It includes case studies on uniform steady-state and transient illumination, as well as diffusion with recombination, illustrating how minority carrier density varies over time and space. Key equations and principles such as the Shockley equations and electrostatics are also summarized.

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rutuparnranade
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3 views6 pages

Continuity

The document discusses the continuity equations for charge carriers in semiconductor physics, detailing the relationships between generation and recombination rates. It includes case studies on uniform steady-state and transient illumination, as well as diffusion with recombination, illustrating how minority carrier density varies over time and space. Key equations and principles such as the Shockley equations and electrostatics are also summarized.

Uploaded by

rutuparnranade
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

Continuity equation for carriers

dI p,n  A  dJ p,n  e  Gp,n  Rp,n   Adx


J p,n
  e  Gp,n  Rp,n 
x
Steady-state

Time-dependence

 J p
  e  Gp  Rp 
t x
p 1 J p
   G p  Rp 
t e x
p 1  n 1 
    J p   G p  Rp 
Continuity from
   J n   Gn  Rn  Ampere’s Law?
t e t e
Shockley Equations
Continuity Drift-Diffusion

n 1  dn
    J n   Gn  Rn  Electrons J n  ne  n  eDn
t e dx

p 1  dp
   J p   Gp  Rp  Holes J p  pe p  eD p
t e dx

Fluid-like flow  Boltzmann Transport Equation

Electrostatics:
  Gauss/Poisson
D  E
 
  D  e  p  n  N d  N a 
 
E  V Important! Recap!
Case study: uniform steady-state illumination
Gn  Gp  G

What is the density of excess minority carriers (electrons)?

n 1 J n
Continuity    Gn  Rn 
t e x
1 J n
Steady-state 0   Gn  Rn 
e x

Uniform J n  0  Gn  Rn

n
Low-level injection Rn   n  G n
n
Case study: uniform transient illumination
Gn  t   Gp  t   G   t   n  t  0  0

How does the density of minority electrons vary with time?

n 1 J n
Continuity    Gn  Rn  Rn   n  n
t e x
n   n    n   n  Jn  0 Uniform
 G     G  
t  n  t  n 
  n  G n   n  G n
 
t n
  n  G n    n  G n  t 0 et  n  G net  n  n  0  0

 n  t   G n 1  et  n

Case study: diffusion with recombination
Steady-state x=0 x=∞

 n  x  0   G n  n  x    0

How does the density of minority electrons vary along x?


n 1 J n 1 J n  n
x   0,   0   Gn  Rn   
t e x e x  n
Steady-state No generation

n  n n 2
 2  n  n n2  Dn n
J n  eDn  Dn 2    2
x x n x 2 n
Boundary
 n  x   Ae  x n
 Be  x n
A  0; B   n  0  conditions

 n  x    n  0  e x   G n e x 
n n
Without recombination?
Finis

Artwork Sources:

1. Prof. Sanjay Banerjee


2. Prof. M.A. Alam
3. [Link]
4. [Link]

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