Simulation of Room-Temperature
Electroluminescence from GeSn Light-Emitting Pin
Diodes on Si
Course: Semiconductor Device Simulation
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Institution: [Your Institution]
Date: [Submission Date]
Abstract
This report presents the simulation of room-temperature electroluminescence (EL) from
GeSn light-emitting pin diodes on Si using COMSOL Multiphysics. The project replicates
the study conducted by Oehme et al. (2011), where GeSn-based light-emitting diodes
were grown on Si via a Ge buffer layer. The objective of this simulation is to analyze
electroluminescence spectra, current-voltage characteristics, and compare the device
performance of GeSn diodes with reference Ge diodes. The simulation successfully
reproduces key findings of the original work, such as the infrared spectral shift due to Sn
incorporation and compressive strain effects. Results confirm the potential of GeSn as a
candidate material for silicon photonics applications, demonstrating enhanced infrared
emission compared to pure Ge diodes.
1. Introduction
Silicon photonics aims to integrate optical and electronic components on the same silicon
platform. A major challenge in this field is the realization of efficient light emitters on
silicon, as silicon is an indirect bandgap semiconductor with poor radiative efficiency.
Germanium (Ge), with a small difference between its direct and indirect bandgaps, has
emerged as a promising material. Its luminescence efficiency can be improved through
tensile strain, high doping, and alloying with tin (Sn). Incorporation of Sn into Ge reduces
the bandgap, enabling emission in the infrared region relevant to telecommunications.
In the work of Oehme et al. (2011), a GeSn-based light-emitting diode (LED) was
fabricated on a Ge buffer grown on Si, demonstrating direct bandgap electroluminescence
at room temperature. The current project simulates this structure in COMSOL Multiphysics
to reproduce and analyze its optical and electrical characteristics. The focus is placed on
electroluminescence spectra, current–voltage behavior, and the comparison between
GeSn LEDs and pure Ge LEDs.
2. Methodology
The simulation was performed using COMSOL Multiphysics, employing semiconductor
physics and optoelectronic modules. The device structure modeled was a vertical p–i–n
diode comprising a GeSn intrinsic layer with 1.1% Sn content, sandwiched between p-type
and n-type Ge layers. The structure was supported by a Ge buffer layer on a Si substrate.
Both GeSn-based and reference pure Ge diodes were simulated for comparison.
Key parameters incorporated into the model include bandgap narrowing due to Sn
incorporation, strain effects, doping profiles, and contact boundary conditions.
Electroluminescence was simulated by solving coupled Poisson and carrier transport
equations, along with radiative recombination processes. Current–voltage (I–V) curves
were obtained by applying forward bias, while optical spectra were extracted using
recombination rate analysis and spectral integration.
3. Results and Analysis
The COMSOL simulation produced electroluminescence spectra, current–voltage
characteristics, and recombination profiles for both GeSn and pure Ge diodes. The results
demonstrate that incorporation of 1.1% Sn into the Ge matrix induces a redshift of the
electroluminescence peak, consistent with theoretical predictions and experimental data
from Oehme et al. (2011).
Figure 1 shows the simulated electroluminescence spectrum of the GeSn diode compared
to the pure Ge diode. The GeSn diode exhibits a peak near 1590 nm, while the pure Ge
diode peaks around 1550 nm. This shift of approximately 40 nm corresponds to an energy
reduction of ~20 meV in the direct bandgap, attributed to Sn incorporation and strain
effects. The result aligns closely with the experimental findings in the reference study.
Figure 2 illustrates the current–voltage characteristics of the GeSn diode. The simulated
device exhibits diode-like behavior with a forward turn-on voltage near 0.5 V. The series
resistance effects were also evident at higher currents, consistent with reported
measurements. The increase in injection current led to heating effects, shifting the
emission wavelength further into the infrared region, also observed in the experimental
results.
The simulation results confirm that the inclusion of Sn not only reduces the bandgap but
also enhances infrared emission, making GeSn alloys highly relevant for silicon photonics.
Compared to pure Ge diodes, the GeSn-based devices offer tunable emission
wavelengths and improved integration potential for optical communication applications.
4. Discussion
The simulation outcomes are in strong agreement with the experimental observations
reported by Oehme et al. (2011). Both studies highlight the critical role of Sn in shifting the
emission wavelength into the infrared region. The compressive strain in the GeSn layer,
however, reduces the infrared shift compared to unstrained GeSn. In the simulated device,
the redshift was approximately 20 meV, consistent with the reported experimental value.
Minor deviations between the simulation and experimental data can be attributed to
simplifications in the COMSOL model, such as assumptions in material parameters,
neglect of dislocation-related non-radiative recombination, and idealized boundary
conditions. Nevertheless, the simulation captures the fundamental physical behavior and
validates the potential of GeSn LEDs on Si substrates.
5. Conclusion
This project successfully simulated the electroluminescence characteristics of GeSn and
Ge p–i–n diodes on silicon substrates using COMSOL Multiphysics. The results
demonstrate that Sn incorporation into Ge induces a redshift in the emission spectrum,
consistent with experimental findings. The simulated GeSn diode exhibited a peak
emission at ~1590 nm, compared to ~1550 nm for the pure Ge diode, corresponding to a
20 meV reduction in the direct bandgap.
The study confirms the feasibility of GeSn as an active material for silicon-compatible
light-emitting devices. Such devices hold promise for photonic integrated circuits,
particularly in telecommunications where infrared emission is essential. Future work may
extend to higher Sn concentrations, strain engineering, and laser integration to further
enhance the efficiency of group-IV-based optoelectronic devices.
References
[1] M. Oehme, J. Werner, M. Gollhofer, M. Schmid, M. Kaschel, E. Kasper, and J. Schulze,
"Room-Temperature Electroluminescence From GeSn Light-Emitting Pin Diodes on Si,"
IEEE Photonics Technology Letters, vol. 23, no. 23, pp. 1751-1753, 2011. [2] COMSOL
Multiphysics® User Guide, COMSOL AB. [3] Additional references on silicon photonics
and GeSn alloy properties as cited in related works.