Course file: Electronic Devices (EC-301)

Program: Bachelor of Technology

Session -2024-25
Faculty Name – Sonal Kaushik

Echelon Institute of

ECHELON INSTITUTE OF TECHNOLOGY

Department of Electronics and communication Engineering

 INDEX
S. N. Content

1 Vision & Mission (Institute)

2 Vision & Mission (Department)
3 PEOs, POs, PSOs of the Program
4 Course allotment (with respect to competency level)
5 MoM of Pre-Commencement meeting
6 Academic Calendar
7 Evaluation Scheme
8 Course Delivery Plan
9 References
10 Time Table (Class Time Table & Faculty Time Table)
11 Students' List
12 Assignments/ Tutorials
13 Slow Learners and Fast learners Students List
14 Sessional Test Question Papers & Solution with marking Scheme
15 Sessional Test Marks and Result Analysis
16 Question Bank
17 University's Previous Years Question Papers/ Model Question Paper(s)
18 Study Material
19 Actions for improvement of Slow learners
20 Further Encouragement of Fast learners
21 Course exit survey report/ Analysis
22 University Result Analysis
23 Overall CO and PO Attainment

Department of Electronics & Communication Engineering

 VISION AND MISSION OF THE INSTITUTE

VISION
The institute is committed to fulfilling its vision of- "Technical and
Management leaders engaged in the evolution of life, being at the
frontiers of the continuous technological and administrative
breakthroughs, inspired by ongoing exploration of self, society, and
nature through self-reflective consciousness by building a culture of
inspiration, exploration and growth."

MISSION

M-1 Having a culture of inspiration, exploration, and invention

through effective, experiential teaching-learning giving rise to ever-
evolving knowledge and wisdom.
M-2 To have self-inspired students ever engaged in continually
working upon and sharpening and deepening computational, creative,
innovative, and leadership consciousness.
M-3 Having students established in self-reflective consciousness,
committed to personal, social & human integrity, and engaged in deep
inquiry and conversation, giving rise to shared, inter-subjective
human values and consciousness.

Department of Electronics & Communication Engineering

 VISION STATEMENT OF THE DEPARTMENT

To create highly skilled, trained, and confident Electronics and Communication

Engineers having professional ethics, strong fundamental knowledge, passion
for technology and competence to adapt to the rapid changes in technology with
the time.

MISSION STATEMENTS OF THE DEPARTMENT

M1 To impart sufficient technical knowledge, skill, and exposure to the

students to make them a tech-savvy professional in the areas of VLSI,
analog signal processing, digital system, embedded system,
communication system etc.
M2 To have well qualified and competent faculty members in the
department who are in a position to impart quality technical education.
M3 To regularly update the labs by incorporating experiments beyond
syllabus and other value- added contents in keeping with current
industry requirement.

M4 To ensure effective counseling and career guidance facility to the

students to help them achieve their goals.
M5 To develop overall personality of the students by encouraging them to
participate in technical and non-technical club activities, sports, and
personality development programs.
M6 To encourage and prepare the students to participate in national level
examinations like GATE.
M7 To encourage faculty and staff members to pursue higher education,
research and to update themselves with the latest trends in technology
being used in the field of electronics and communication.

Department of Electronics & Communication Engineering

 PROGRAM EDUCATIONAL OBJECTIVES (PEOs)

PEO-1: To have the successful careers in the field of computer

science and allied sectors as an innovative engineer.

PEO-2: To continue to learn and advance their careers through

professional activities, certifications and advanced studies.

PEO-3: To develop the ability to evaluate computing systems with

lifelong learning from the viewpoint of Quality, Security, Social,
Environmental, Privacy, Cost, Utility and Ethics.

PEO-4: To establish in leadership role in any field with managerial

practices.

Department of Electronics & Communication Engineering

 PROGRAM OUTCOMES (POs)
Engineering knowledge: Apply the knowledge of mathematics, science,
PO1 engineering fundamentals, and an engineering specialization to the solution of
complex engineering problems.
Problem analysis: Identify, formulate, review research literature, and analyze
PO2 complex engineering problems reaching substantiated conclusions using first
principles of mathematics, natural sciences, and engineering sciences.
Design/development of solutions: Design solutions for complex engineering
problems and design system components or processes that meet the specified
PO3
needs with appropriate consideration for the public health and safety, and the
cultural, societal, and environmental considerations.
Conduct investigations of complex problems: Use research-based knowledge
and research methods including design of experiments, analysis and
PO4
interpretation of data, and synthesis of the information to provide valid
conclusions.
Modern tool usage: Create, select, and apply appropriate techniques, resources,
PO5 and modern engineering and IT tools including prediction and modeling to
complex engineering activities with an understanding of the limitations.
The engineer and society: Apply reasoning informed by the contextual
PO6 knowledge to assess societal, health, safety, legal and cultural issues and the
consequent responsibilities relevant to the professional engineering practice.
Environment and sustainability: Understand the impact of the professional
PO7 engineering solutions in societal and environmental contexts, and demonstrate
the knowledge of, and need for sustainable development.
Ethics: Apply ethical principles and commit to professional ethics and
PO8
responsibilities and norms of the engineering practice.
Individual and team work: Function effectively as an individual, and as a
PO9
member or leader in diverse teams, and in multidisciplinary settings.
Communication: Communicate effectively on complex engineering activities with
the engineering community and with society at large, such as, being able to
PO10
comprehend and write effective reports and design documentation, make effective
presentations, and give and receive clear instructions.
Project management and finance: Demonstrate knowledge and understanding of
the engineering and management principles and apply these to one’s own work,
PO11
as a member and leader in a team, to manage projects and in multidisciplinary
environments.
Life-long learning: Recognize the need for, and have the preparation and ability
PO12 to engage in independent and life-long learning in the broadest context of
technological change.

Department of Electronics & Communication Engineering

 PROGRAM SPECIFIC OUTCOMES (PSOs)

PSO-1: Ability to apply and analyze the computational concepts in

the algorithm design related to Machine Learning, Cloud computing,
web designing, services, and security.

PSO-2: Ability to apply advanced practices to develop new

methodologies and concepts in software development, Project
management, and Computational analysis in real-time problems.

PSO-3: Ability to employ fundamental concepts and emerging

technologies for innovative research activities, new product
development, entrepreneurship, and higher studies.

Department of Electronics & Communication Engineering

 COURSE ALLOTMENT
(with respect to competency level)

COMPETENCY SKILL

Name of the Faculty Sonal Kaushik

Designation Professor

Area of Specialization Electronic Devices

Course taught in the previous session Digital Electronics-I

Pass percentage of students in the
Previous 70
previous session
performances
CO1 CO2 CO3 CO4 CO5
CO Average Attainment 50 50 50 50 50
Average: 50
Course choice with preferences 1. -

Course/s Allotted

Theory /
S.N. Course Code Course Title Semester
Lab
1 EC-301 Electronic Devices VII Theory

2 NA NA NA NA

HOD

Department of Electronics & Communication Engineering

MOM OF PRE-COMMENCEMENT MEETING

Department of Electronics & Communication Engineering

UNIVERSITY ACADEMIC CALENDAR

Department of Electronics & Communication Engineering

INSTITUTE ACADEMIC CALENDAR

Department of Electronics & Communication Engineering

 EVALUATION SCHEME

Department of Electronics & Communication Engineering

 COURSE DELIVERY PLAN
Program: [Link]. Degree: Under Graduates
Course: Electronic Devices Semester: 7 Credits: 3
Course Code: EC-301 Course Type: Core

Course Area/Domain: Physics Contact Hours: 3 (Tutorial) Hours/Week.

Corresponding Lab Course Code (If Any): Lab Course Name (If Any):

SYLLABUS:

MODULE DETAILS HOURS

MODULE 1: INTRODUCTION TO SEMICONDUCTOR PHYSICS

Purpose: Introduction to different principles of semiconductor physics

I 5
Review of Quantum Mechanics, Electrons in periodic Lattices, E-k diagrams.
Energy bands in intrinsic and extrinsic silicon: Carrier transport: diffusion current,
drift current, mobility and resistivity, sheet resistance, design of resistors

MODULE 2:
Purpose: study of different mathematical models of semiconductor
junctions
II 8
Generation and recombination of carriers, Poisson and continuity equation P-N
junction characteristics, I-V characteristics, and small signal switching models:
Avalanche breakdown, Zener diode, Schottky diode

MODULE 3:
Purpose: study of different MOS transistors for circuits and systems
III 15
Bipolar Junction Transistor, I-V characteristics, Ebers-Moll Model, MOS capacitor,
C-V characteristics, MOSFET, I-V characteristics, and small signal models of MOS
transistor, LED, photodiode and solar cell

MODULE 4:
Purpose: study various semiconductor fabrication process
IV 10
Integrated circuit fabrication process: oxidation, diffusion, ion implantation,
photolithography, etching, chemical vapor deposition, sputtering, twin-tub CMOS
process.

Total 38

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 TEXT/REFERENCE BOOKS:
T/R BOOK TITLE/AUTHORS/PUBLICATION
T1 G. Streetman, and S. K. Banerjee, ―Solid State Electronic Devices,‖ 7th edition, Pearson,2014.
T2 D. Neamen, D. Biswas "Semiconductor Physics and Devices," McGraw-Hill Education
R1 Sanjeev Gupta, Electronic devices and circuits, Dhanpat rai publications

COURSE PRE-REQUISITES:
COURSE
COURSE NAME DESCRIPTION SEM
CODE
EC-301 Electronic Devices Basics of physics 3

COURSE OUTCOMES:
CO1 Understand the principles of semiconductor Physics
Understand and utilize the mathematical models of semiconductor junctions and MOS
CO2
transistors for circuits and systems.
CO3 Understand the design & characteristics of semiconductor device
CO4 Understand various semiconductor, fabrication process

COURSE OUTCOMES VS POs MAPPING (DETAILED; HIGH:3; MEDIUM:2;

LOW:1):
Program Outcomes PSO
CO
s PO PO PO PO PO PO PO PO PO PO1 PO1 PO1
PSO1 PSO2 PSO3
1 2 3 4 5 6 7 8 9 0 1 2
CO
1
CO2
CO3
CO4
Tota
l
Avg

POs & PSOs REFERENCE:

PO1 Engineering Knowledge PO7 Environment & Sustainability PSO1 …………………………
PO2 Problem Analysis PO8 Ethics PSO2 ………………………….
PO3 Design & Development PO9 Individual & Team Work PSO3 …………………………..
PO4 Investigations PO10 Communication Skills
PO5 Modern Tools PO11 Project Mgt. & Finance
PO6 Engineer & Society PO12 Life Long Learning

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 GAPS IN THE SYLLABUS - TO MEET INDUSTRY/PROFESSION
REQUIREMENTS, POs & PSOs:
SNO DESCRIPTION PROPOSED
ACTIONS
1 FET is not included in syllabus, Direct MOSFET is given Separate lectures taken to
understand FET & JFET

PROPOSED ACTIONS: TOPICS BEYOND SYLLABUS/ASSIGNMENT/INDUSTRY VISIT/GUEST LECTURER/NPTEL ETC

TOPICS BEYOND SYLLABUS/ADVANCED TOPICS/DESIGN:

1 NA
2 NA

DELIVERY/INSTRUCTIONAL METHODOLOGIES:
☐ CHALK & TALK ☐ STUDENT ASSIGNMENT ☐ WEB RESOURCES ☐ NPTEL/OTHERS
☐ PROJECTOR/SMARTBOARDS ☐ STUD. SEMINARS ☐ ADD-ON COURSES ☐ WEBNIARS

ASSESSMENT METHODOLOGIES-DIRECT
☐ ASSIGNMENTS ☐ STUDENT SEMINARS ☐STUD. VIVA ☐ UNIV. EXAMINATION

ASSESSMENT METHODOLOGIES-INDIRECT
☐ ASSESSMENT OF COURSE OUTCOMES (course outcome survey)

INNOVATIONS IN TEACHING-LEARNING PROCESSES:

1.
2.
3.
Prepared by
(Sonal Kaushik)

Department of Electronics & Communication Engineering

 LESSON PLAN

Date
Lecture Reference
UNIT CO (No) Topic Description RBTL Actual
No Material Planned
Delivery
Physics 1 Pre-requisite NA

2 CO 1 Introduction to LEVEL-1 T1, R1 1/8/2024 1/8/2024

Semiconductor Physics

3 CO 1 Review of Quantum LEVEL-2 T1, R1 2/8/2024 2/8/2024

Mechanics, Electrons
in periodic Lattices, E-
k diagrams
UNIT-1 Energy bands in
4 CO 1 intrinsic and extrinsic LEVEL-2 T1, R1 7/8/2024 7/8/2024
silicon

Carrier transport:
5 CO 1 LEVEL-2 T1, R1 8/8/2024 8/8/2024
diffusion current, drift
current, mobility and
resistivity

6 CO 1 sheet resistance, design LEVEL-2 T1, R1 9/8/2024 9/8/2024

of resistors
Generation and
UNIT-2 7 CO 2 recombination of LEVEL-2 T1, R1 14/08/2024 14/08/2024
carriers

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 8 CO 2 Poisson and continuity LEVEL-2 T2, R1 16/08/2024 16/08/2024
equation
9 CO 2 LEVEL-2 T2, R1 21/08/2024 22/08/2024
P-N junction Diode
10 CO 2 P-N junction I-V LEVEL-2 T2, R1 22/08/2024 23/08/2024
characteristics,
small signal switching
11 CO 2 LEVEL-2 T4, R1 23/08/2024 28/08/2024
models
12 CO 2 Avalanche breakdown LEVEL-2 T4, R1 28/08/2024 29/08/2024
13 CO 2 Zener diode LEVEL-2 T4, R1 29/08/2024 30/08/2024
14 CO 2 Schottky diode LEVEL-2 T4, R1 30/08/2024 30/08/2024

15 CO 3 Introduction to Bipolar LEVEL-2 T3, R1 4/9/2024 3/9/2024

Junction Transistor
16 CO 3 BJT working LEVEL-2 T3, R1 5/9/2024 3/9/2024

17 CO 3 V-I Characteristics of LEVEL-2 T3, R1 6/9/2024 4/9/2024

BJT
UNIT-3
18 CO 3 MOSFET: intoduction LEVEL-2 T3, R1 11/9/2024 10/9/2024
& working
19 CO 3 MOSFET, I-V LEVEL-2 T3, R1 12/9/2024 10/9/2024
characteristics

20 CO 3 small signal models of LEVEL-2 T3, R1 13/09/2024 11/9/2024

MOS transistor,
21 CO 3 LED LEVEL-2 T3, R1 25/09/2024 17/9/2024

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 22 CO 3 PHOTODIODE LEVEL-2 T3, R1 26/09/2024 17/9/2024

23 CO 3 SOLAR CELL: LEVEL-2 T3, R1 27/09/2024 23/9/2024

Intoduction working

24 CO 4 Integrated circuit LEVEL-2 T3, R1 2/10/2024 24/9/2024

fabrication process
25 CO 4 oxidation LEVEL-2 T3, R1 3/10/2024 25/9/2024
26 CO 4 diffusion LEVEL-2 T1, R1 4/10/2024 26/9/2024
27 CO 4 ion implantation LEVEL-2 T1, R1 9/10/2024 1/10/2024
28 CO 4 photolithography LEVEL-2 T1, R2 10/10/2024 3/10/2024
29 CO 4 etching LEVEL-2 T1, R3 11/10/2024 7/10/2024

30 CO 4 chemical vapor LEVEL-2 T1, R4 16/10/2024 8/10/2024

deposition
31 CO 4 sputtering LEVEL-2 T1, R5 17/10/2024 9/10/2024
UNIT-4
32 CO 4 twin-tub CMOS LEVEL-2 T1, R6 18/10/2024 10/10/2024
process.
33 CO 4 LEVEL-1 T3, R1 23/10/2024 14/10/2024
Revision & Doubts
34 CO 4 LEVEL-1 T3, R1 24/10/2024 15/10/2024
Revision & Doubts
35 CO 4 LEVEL-1 T3, R1 25/10/2024 21/10/2024
Revision & Doubts
36 CO 4 LEVEL-1 T3, R1 30/10/2024
Revision & Doubts
37 CO 4 LEVEL-1 T3, R1 31/10/2024
Revision & Doubts

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38 CO 4 LEVEL-1 T3, R1 6/11/2024
Revision & Doubts
39 CO 4 LEVEL-1 T3, R1 7/11/2024
Revision & Doubts
40 CO 4 LEVEL-1 T3, R1 8/11/2024
Revision & Doubts
41 CO 4 LEVEL-1 T3, R1 13/11/2024
Revision & Doubts
42 CO 4 LEVEL-1 T3, R1 14/11/2024
Revision & Doubts

Department of Electronics & Communication Engineering

 REFERENCES
REFERENCES (REFERENCE BOOKS/TEXTBOOK)
S.
Tx/Rx Details
N.
G. Streetman, and S. K. Banerjee, ―Solid State Electronic Devices,‖
1 T1
7th edition, Pearson,2014.
D. Neamen, D. Biswas "Semiconductor Physics and Devices,"
2 T2
McGraw-Hill Education
Sanjeev Gupta, Electronic devices and circuits, Dhanpat rai
3 R1
publications

WEB SOURCE REFERENCES

S.
Topic CO Details
N.
CO-
1 All Topics [Link]
1,2,3,4

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 FACULTY TIME TABLE

CLASS TIMETABLE

Department of Electronics & communication Engineering

 STUDENTS LIST
S.N. Roll Number Student Name Contact No
1 23-ECE-001 ANANT RAI 9310642066
2 23-ECE-002 KIRTI RAJ DASH 7827093135
3 23-ECE-003 ROHIT KUMAR 8750996661
4 23-ECE-004 ISHA KUSHWAHA 9911925270
5 23-ECE-L-01 SHIVAM GOSWAMI 9315025765
6 23-ECE-L-02 KUSHAGRA BIDHURI 9667337595
7 23-ECE-L-03 UMA KASHYAP 9102905824
8 23-ECE-L-04 PRITISH ADAK 9891779599

Department of Electronics & communication Engineering

 Roll No. ………………….
First Sessional Test, September- 2024
B. Tech (ECE) 3rd Semester
Electronic Devices (EC301)
Time: 90 Minutes [Max Marks: 30]
Instructions:
1. Question No. 1. It is compulsory.
2. Answer any two questions from PART-B.
3. Different sub-parts of a question are to be attempted adjacent to each other.
CO-1 Understand the principles of semiconductor Physics
CO-2 Understand and utilize the mathematical models of semiconductor junctions
PART-A
PART-A
Revised Bloom
Course
Q.N. Question Taxonomy Marks
Outcomes
Level
i At room temperature, why the conductivity of silicon is
1. CO-1 RBTL-2 1
lower than that of germanium.
ii Explain the physical significance of ‘k’ in a E-k diagram
CO-1 RBTL-1 1
of a semiconductor.
iii List out the conditions under which a zener diode can be
CO-1 RBTL-2 1
used as a voltage regulator?
iv Define sheet resistance & explain its importance & how it
CO-1 RBTL-1 1
can be increased.
v Differentiate between Direct & Indirect band gap
CO-1 RBTL-2 1
semiconductor.
vi State the mass action law. CO-2 RBTL-1 1

vii Differentiate between real diode and Ideal diode CO-2 RBTL-1 1
viii Can we use Si & Ge for fabrication of LED? Justify your RBTL-2 1
CO-2
answer.
ix Write the equation of Diode. CO-2 RBTL-2 1

x Differentiate between Extrinsic & Intrinsic semiconductor. CO-2 RBTL-1 1

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PART B

Bloom
Course
Q.N. Question Taxonomy Marks
Outcomes
Level
2. (a) Obtained the expression for charge densities in N-type and P- 5
type semiconductor CO- 1 RBTL-2
(b) Calculate the conductivity of pure silicon at room temperature
when the concentration of charge carriers is 1.6 x 1010 per cm3. 5
CO- 2 RBTL-2
Take mobility of electron is 1500 cm 2/v-s and mobility of holes is
500 cm2/v-s
3. (a) Define Current density. Obtain expression for current densities 5
in N-type & P-type semiconductor. CO- 1 RBTL-2
(b) Differentiate between drift and diffusion current. Why does the
diffusion current increase exponentially with increasing forward 5
bias? CO- 2 RBTL-2

4. (a) Differentiate between V-I characteristics of PN junction diode &

Zener diode. Explain how a zener diode can be used as a voltage 5
CO- 1 RBTL-2
regulator.
(b) Define Fermi level for metals. Show that for intrinsic
semiconductor, Fermi level is midway between the conduction 5
CO- 2 BTL-2
band and valence band for N-type & P-type semiconductor.

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 SLOW LEARNERS AND ADVANCED LEARNERS
SLOW LEARNERS
University
S. No Student Name Slow/Advanced
Roll
1 23-ECE-001 ANANT RAI 10
2 23-ECE-002 KIRTI RAJ DASH 04
4 23-ECE-004 ISHA KUSHWAHA 04
5 23-ECE-L-01 SHIVAM GOSWAMI 12
6 23-ECE-L-02 KUSHAGRA BIDHURI 05
7 23-ECE-L-03 UMA KASHYAP 07
8 23-ECE-L-04 PRITISH ADAK 13

ADVANCED LEARNERS
University
S. No Student Name Slow/Advanced
Roll
1 23-ECE-003 ROHIT KUMAR 19

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Sessional Test-1
Solution
PART-A
Q1)i At room temperature, why the conductivity of silicon is lower than that of germanium.
A(i) The conductivity of silicon is lower than that of germanium at room temperature
because of differences in their atomic structure and band gap energy:

1. Band Gap Energy: Silicon has a larger band gap (~1.12 eV) compared to
germanium (~0.66 eV). The band gap is the energy difference between the
valence band (where electrons are bound to atoms) and the conduction band
(where electrons are free to move and conduct electricity). A larger band gap
means that more energy is required for electrons to jump from the valence
band to the conduction band, leading to fewer free electrons available for
conduction in silicon at a given temperature.
2. Atomic Structure: Germanium atoms are larger than silicon atoms, and the
distance between atoms in germanium is slightly greater. This makes it easier
for electrons to move between atoms, increasing germanium's conductivity
relative to silicon.
3. Thermal Excitation: At room temperature, thermal energy excites electrons
into the conduction band. Because germanium has a smaller band gap, it
requires less thermal energy to excite electrons compared to silicon, leading
to higher conductivity for germanium.

These factors combined explain why silicon's conductivity is lower than that of
germanium at room temperature.

Q Explain the physical significance of ‘k’ in a E-k diagram of a semiconductor.

A(ii) In an E-k diagram (Energy-momentum diagram) of a semiconductor, 'k' represents
the wave vector or crystal momentum of an electron within the crystal lattice of the
semiconductor. It is related to the momentum of electrons in the periodic potential of
the crystal. The physical significance of 'k' can be understood in the following points:

1. Crystal Momentum:

 In a semiconductor, electrons move in a periodic potential created by the

arrangement of atoms in the crystal lattice. The quantity 'k' represents the
momentum of the electron within this periodic potential.
 Although it's not the true physical momentum (since electrons in crystals don't
behave like free particles), it helps describe how electrons behave under external
forces (such as electric fields).

2. Relation to Electron Energy:

 The energy of an electron (E) in a semiconductor depends on 'k'. The E-k diagram

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 shows the allowed energy states (energy bands) for electrons in the crystal as a
function of their wave vector k.
 The shape of the E-k diagram determines the effective mass of the electrons and
holes, which affects how they respond to electric and magnetic fields.

3. Band Structure:

 The E-k diagram reveals the band structure of a semiconductor. The diagram
typically shows the conduction band and valence band, where energy levels of
electrons are plotted as a function of k.
 The direct or indirect nature of the semiconductor band gap is determined by the
relationship between the conduction band minimum and the valence band
maximum in the diagram.
o If the conduction band minimum and the valence band maximum occur at
the same k value, the semiconductor is direct band gap (e.g., GaAs).
o If they occur at different k values, it is an indirect band gap (e.g., Si).

4. Electron Movement and Velocity:

 The slope of the E-k curve determines the group velocity of the electron (which
represents the actual velocity at which the electron moves through the crystal).

Q List out the conditions under which a zener diode can be used as a voltage regulator?
A(iii) A Zener diode can be used as a voltage regulator under the following conditions:

1. Reverse Bias Operation:

 The Zener diode must be operated in reverse bias mode, where the anode is
connected to the negative terminal of the power supply and the cathode is
connected to the positive terminal.

2. Applied Voltage Exceeds Zener Breakdown Voltage:

 The input voltage must be higher than the Zener breakdown voltage (Vz) of the
diode. Once the reverse voltage exceeds this breakdown threshold, the Zener
diode maintains a constant voltage across itself, which can be used for regulation.

3. Operating Within Power Dissipation Limits:

 The Zener diode must operate within its power dissipation limits to prevent
damage. Power dissipation

Q Explain briefly the dispersion with in an optical fiber

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A(iv)
Direct Band Gap Semiconductor:

1. Band Structure:
o In a direct band gap semiconductor, the minimum of the conduction band
and the maximum of the valence band occur at the same wave vector k in
the E-k diagram.
o This means that an electron can move from the valence band to the
conduction band (and vice versa) without a change in momentum.

2. Electron-Hole Recombination:
o In direct band gap semiconductors, electron-hole recombination is more
efficient because no momentum change is required. As a result, when
electrons in the conduction band recombine with holes in the valence
band, the energy is released directly as a photon (light).
o These materials are ideal for optical applications such as LEDs and laser
diodes.

3. Examples:
o Common examples include Gallium Arsenide (GaAs), Gallium Nitride
(GaN), and Indium Phosphide (InP).

Indirect Band Gap Semiconductor:

1. Band Structure:
o In an indirect band gap semiconductor, the minimum of the

Q Differentiate between Direct & Indirect band gap semiconductor.

A(v)
The two main causes of intra-modal dispersion (also known as chromatic
dispersion) in optical fibers are:
1. Material Dispersion:
o Occurs because different wavelengths (colors) of light travel at
slightly different speeds through the fiber core material.
o This is due to the refractive index of the material varying with
wavelength, causing different spectral components to spread out over
time.
2. Waveguide Dispersion:
o Happens due to the dependence of light propagation on the fiber's
structural parameters, like the core and cladding dimensions.
o Different wavelengths distribute differently between the core and
cladding, which leads to slight differences in their velocities.

Q Differentiate between real diode and Ideal diode

A(vi)
Ideal Diode:

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 1. Perfect Conduction in Forward Bias:
o In an ideal diode, when it is forward biased (positive voltage applied to the
anode), it allows current to flow without any resistance. There is no voltage
drop across the diode.
o The forward voltage drop (Vf) is exactly 0V.

2. Perfect Insulation in Reverse Bias:

o In reverse bias (negative voltage applied to the anode), the ideal diode
blocks all current, acting as a perfect insulator. No current flows, regardless
of the applied reverse voltage.

3. Instantaneous Switching:
o An ideal diode switches between its conducting and non-conducting states
instant

Q Write the equation of Diode.

A(viii The equation that describes the current-voltage (I-V) characteristics of a diode is the
) Shockley diode equation, which is given by:

I=IS(eVDnVT−1)I = I_S \left( e^{\frac{V_D}{n V_T}} - 1 \right)I=IS(enVTVD−1)

Where:

 III = the diode current (A).

 ISI_SIS = the saturation current or reverse saturation current (A), which is a small
current that flows when the diode is reverse biased.
 VDV_DVD = the voltage across the diode (V).
 nnn = the ideality factor (usually between 1 and 2), which depends on the diode's
material and manufacturing.
 VTV_TVT = the thermal voltage (V), given by VT=kTqV_T = \frac{kT}{q}VT=qkT,
where:
o kkk = Boltzmann's constant (1.38×10−23 J/K1.38 \times 10^{-23} \,
\text{J/K}1.38×10−23J/K),
o TTT = absolute temperature in Kelvin (K),
o qqq = the charge of an electron (1.6×10−19 C1.6 \times 10^{-19} \, \
text{C}1.6×10−19C).

Q Differentiate between Extrinsic & Intrinsic semiconductor

A(ix)

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 Q State the mass action law.
A(x) The mass action law in semiconductors states that the product of the concentration
of electrons (nnn) in the conduction band and the concentration of holes (ppp) in the
valence band is constant at thermal equilibrium and is equal to the square of the
intrinsic carrier concentration (nin_ini).

Mathematically, it is expressed as:

n⋅p=ni2n \cdot p = n_i^2n⋅p=ni2

Where:

 nnn = concentration of electrons in the conduction band.

 ppp = concentration of holes in the valence band.
 nin_ini = intrinsic carrier concentration (the number of electrons or holes in a pure
semiconductor).

Significance:

 The law applies to both intrinsic and extrinsic semiconductors.

 In intrinsic semiconductors, n=p=nin = p = n_in=p=ni.

Q2 a)Obtained the expression for charge densities in N-type and P-type semiconductor
b)Calculate the conductivity of pure silicon at room temperature when the concentration of
charge carriers is 1.6 x 1010 per cm3. Take mobility of electron is 1500 cm2/v-s and
mobility of holes is 500 cm2/v-s
Ans- In n-type and p-type semiconductors, the charge carrier densities are influenced by
2A the type of doping (donor or acceptor atoms). Below are the expressions for electron
and hole densities in both types of semiconductors.

1. N-type Semiconductor:

 Doped with donor atoms, which contribute additional electrons to the conduction
band, making electrons the majority carriers and holes the minority carriers.

Electron Density (nnn):

 In an n-type semiconductor, the electron density nnn is approximately equal to the

donor concentration NDN_DND, as most donors donate electrons to the
conduction band: n≈NDn \approx N_Dn≈ND Where NDN_DND is the concentration

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 of donor atoms.

Hole Density (ppp):

 The hole concentration in an n-type semiconductor is given by the mass action law:
p=ni2np = \frac{n_i^2}{n}p=nni2 Where:
o nin_ini = intrinsic carrier concentration,
o nnn = electron density (which is approximately NDN_DND).

Hence, the hole concentration becomes:

p=ni2NDp = \frac{n_i^2}{N_D}p=NDni2

Therefore, in an n-type semiconductor:

 n≈NDn \approx N_Dn≈ND,

 p=ni2NDp = \frac{n_i^2}{N_D}p=NDni2.

2. P-type Semiconductor:

 Doped with acceptor atoms, which create holes in the valence band, making holes
the majority carriers and electrons the minority carriers.

Hole Density (ppp):

 In a p-type semiconductor, the hole density ppp is approximately equal to the

acceptor concentration NAN_ANA, as most acceptors create holes in the valence
band: p≈NAp \approx N_Ap≈NA Where NAN_ANA is the concentration of acceptor
atoms.

Electron Density (nnn):

 The electron concentration in a p-type semiconductor is also governed by the mass

action law: n=ni2pn = \frac{n_i^2}{p}n=pni2 Substituting p≈NAp \approx N_Ap≈NA:
n=ni2NAn = \frac{n_i^2}{N_A}n=NAni2

Therefore, in a p-type semiconductor:

 p≈NAp \approx N_Ap≈NA,

 n=ni2NAn = \frac{n_i^2}{N_A}n=NAni2.

Summary of Charge Densities:

 N-type Semiconductor: n≈ND,p=ni2NDn \approx N_D, \quad p = \frac{n_i^2}

{N_D}n≈ND,p=NDni2
 P-type Semiconductor: p≈NA,n=ni2NAp \approx N_A, \quad n = \frac{n_i^2}

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 {N_A}p≈NA,n=NAni2

These expressions describe the electron and hole densities in n-type and p-type
semiconductors, showing how doping influences the distribution of charge carriers.

Ans- The conductivity of pure silicon at room temperature, with a charge carrier
2B concentration of 1.6×10101.6 \times 10^{10}1.6×1010 per cm³, an electron mobility
of 1500 cm2/V-s1500 \, \text{cm}^2/\text{V-s}1500cm2/V-s, and a hole mobility of
500 cm2/V-s500 \, \text{cm}^2/\text{V-s}500cm2/V-s, is approximately:

σ≈5.12 μS/cm\sigma \approx 5.12 \, \mu\text{S/cm}σ≈5.12μS/cm

This value indicates the conductivity of intrinsic silicon under the given conditions.

Q3 Define Current density. Obtain expression for current densities in N-type & P-type
semiconductor.

Ans-
3(a) Current Density

Current density (JJJ) is defined as the amount of electric current flowing per unit
area of a material. It is a vector quantity, indicating both the magnitude and direction
of current flow. The formula for current density is given by:

J=IAJ = \frac{I}{A}J=AI

Where:

 JJJ = current density (A/m²),

 III = current (A),
 AAA = cross-sectional area through which the current flows (m²).

Current Density in N-type and P-type Semiconductors

In semiconductors, the current density can be expressed in terms of the charge

carriers (electrons and holes) and their mobilities.

1. N-type Semiconductor:

In an n-type semiconductor, electrons are the majority carriers. The total current
density can be expressed as the sum of the contributions from electrons and holes,
but since holes are minority carriers in n-type semiconductors, their contribution can
often be neglected for simplification.

The current density due to electrons (JnJ_nJn) is given by:

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Jn=qnμnEJ_n = q n \mu_n EJn=qnμnE

Where:

 qqq = charge of an electron (1.6×10−19 C1.6 \times 10^{-19} \, \

text{C}1.6×10−19C),
 nnn = concentration of electrons (m⁻³),
 μn\mu_nμn = mobility of electrons (m²/V-s),
 EEE = electric field (V/m).

Since holes are minority carriers, we can ignore their contribution, leading to the
total current density in n-type semiconductors:

J≈Jn=qnμnEJ \approx J_n = q n \mu_n EJ≈Jn=qnμnE

2. P-type Semiconductor:

In a p-type semiconductor, holes are the majority carriers. The total current density is
primarily due to holes, with electron contribution being negligible.

The current density due to holes (JpJ_pJp) is given by:

Jp=qpμpEJ_p = q p \mu_p EJp=qpμpE

Where:

 ppp = concentration of holes (m⁻³),

 μp\mu_pμp = mobility of holes (m²/V-s).

The total current density in p-type semiconductors can be expressed as:

J≈Jp=qpμpEJ \approx J_p = q p \mu_p EJ≈Jp=qpμpE

Summary of Current Density Expressions:

 N-type Semiconductor:

J≈qnμnEJ \approx q n \mu_n EJ≈qnμnE

 P-type Semiconductor:

J≈qpμpEJ \approx q p \mu_p EJ≈qpμpE

These expressions show how the current density in semiconductors depends on the
charge carrier concentrations, their mobilities, and the applied electric field.

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Q4 Differentiate between drift and diffusion current. Why does the diffusion current increase
exponentially with increasing forward bias?

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Department of Electronics & communication Engineering
Marking Scheme for First Sessional, September
2024
B. Tech (CSE) Semester-3 Subject: Electronic Devices

(ESC-501)
Total Marks: 30
Duration: 90 Minutes

PART-A (10 Marks)

(All questions in PART-A are compulsory)

Each sub-part of Q1 carries 1 mark. Marks are awarded for correct and concise answers.

Q.N. Question Marks Criteria for Full Marks

I. At room temperature, why the Give reason (1 mark).
conductivity of silicon is lower than 1
that of germanium
II. Explain the physical significance of ‘k’ Give reason (1 mark).
1
in a E-k diagram of a semiconductor.
III. List out the conditions under which a Write two main causes (1 mark).
zener diode can be used as a voltage 1
regulator?
IV. Define sheet resistance & explain its Definition (1 mark).
1
importance & how it can be increased
V. Differentiate between Direct & Indirect Write two main causes (1 mark).
1
band gap semiconductor.
VI. State the mass action law. 1 Definition (1 mark).
VII. Differentiate between real diode and Correct statement of the real and ideal(1
Ideal diode 1
mark).
VIII. Can we use Si & Ge for fabrication of Give reason (1 mark).
1
LED? Justify your answer.
IX. Write the equation of Diode. 1 Write Equation (1 mark)

Total Marks for PART-A: 10 Marks

Overall Mark Distribution:

 PART-A: 10 marks
 PART-B: 20 marks
(Total: 30 marks)

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 Roll No. ………………….
Second Sessional Test, November-2024
B. Tech (Branch) ECE Semester-3
ED(EC-301)
Time: 180 Minutes [Max Marks: 45]
Instructions:
1. All questions are compulsory.
2. Different sub-parts of a question are to be attempted adjacent to each other.
CO-3 Acquire a comprehensive understanding of the principles employed in classifying enzymes and
discern the various mechanisms involved in enzymatic action.
CO-4. Apply thermodynamic principles to analyze and interpret biological systems, enabling students to
assess the energetic aspects of diverse biological processes.
CO-5. Develop proficiency in identifying and categorizing microorganisms.
PART-A
Course Revised Bloom’s
Q.N. Question Marks
Outcomes Taxonomy Level
1. CO-3 Level-2 1
CO-3 Level-1 1
CO-3 Level-2 1
CO-4 Level-2 1
CO-4 Level-2 1
CO-4 Level-1 1
CO-5 Level-2 1
CO-5 Level-2 1
CO-5 Level-2 1
CO-3 Level-2 2
CO-4 Level-2 2
CO-5 Level-2 2
PART-B
Course Revised Bloom’s
Q.N. Question Marks
Outcomes Taxonomy Level
2. CO- 3 Level-2 7

CO- 3 Level-2 7
CO- 3 Level-2 3
3. CO- 4 Level-2 7

CO- 4 Level-2 7
CO- 4 Level-2 3
4. CO- 5 Level-2 7

CO- 5 Level-2 7
CO- 5 Level-2 3

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 Sessional Test-2
Solution
(a) What do you understand by nucleotide?

(b) What are polysaccharides?

Marking Scheme for Second Sessional Test, November

2023

B. Tech (CSE) Semester-7

Subject: Biology (BSC-01)
Total Marks: 45
Duration: 180 Minutes

PART-A (15 Marks)

(All sub-questions in PART-A are compulsory)

Each question in PART-A carries 1 or 2 marks based on the difficulty level. Marks are
awarded for accuracy, clarity, and completeness.

[Link]. Question Marks Criteria for Full Marks

1(a)
1(b)
1(c)
1(d)
1(e)
1(f)
1(g)
1(h)
1(i)
1(j)
1(k)
1(l)

Total Marks for PART-A: 15 Marks

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PART-B (30 Marks)

(All questions in PART-B are compulsory. Each part consists of two sub-parts with options.)

Q2 (10 Marks)

Q2(a) Explain the theories and mechanism of action of enzymes.

(7 marks)

OR

What is genetic code? Explain with an example. (7 marks)

Q2(b) What do you understand by the universality and degeneracy of genetic code?
(3 marks)

Q3 (10 Marks)

Q3(a) Explain the TCA Cycle in detail. (7 marks)

OR

Explain Glycolysis in detail. (7 marks)

Q3(b) Explain why ATP is regarded as the energy currency of the cell. (3 marks)

Q4 (10 Marks)
Q4(a) What do you understand by the term microscopy? Explain different types of
microscopic techniques. (7 marks)

OR

Explain Growth Kinetics in detail. (7 marks)

Q4(b) Differentiate between species and strain. (3 marks)

Total Marks for PART-B: 30 Marks

Overall Mark Distribution:

 PART-A: 15 Marks
 PART-B: 30 Marks
(Total: 45 Marks)

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 SESSIONAL TEST-1
MARKS AND RESULT ANALYSIS
Student Name CO-1 CO-2 Total
S. No University Roll
Max. or Total Marks ==> 15 15 30

SESSIONAL TEST-2
MARKS AND RESULT ANALYSIS
S. University Student Name CO-3 CO-4 CO-5 Total
No Roll Max. or Total Marks ==> 15 15 15 45
1
2 05
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24

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25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66

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67
68
69
70
71
72

CO1 CO2 CO3 CO4 CO5

FOR
96.43 96.43 100.00 92.86 94.64
Level of Attainment 3 3 3 3 3

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 QUESTION BANK/UNIVERSITY PAPER/MODEL TEST PAPER

QUESTION BANK
Module -1

Q. N. Questions Marks Years

At room temp why the conductivity of silicon is lower than

Q1. that of germanium?
1.5 Dec-2019

Q2. What is the physical significance of K in E-K diagram? 1.5 Dec-2019

Differentiate between drift and diffusion current. Why does
Q3. the diffusion current increase exponentially with increasing 1.5 Dec-2019
forward bias.
Define Fermi level for metals. Show that for intrinsic
semiconductor, Fermi level is midway between the
Q4. 7 Dec-2019
conduction band and valence band. Show that location
for N-type and P-type semiconductor.
What do you mean by sheet resistance? How it can be
Q5. 1.5 Dec-2019
increased?
Module -2
Mark
Q. No. Questions Years
s
Differentiate between V-I characteristics of PN junction
Q1. diode and Zener diode? Explain how a zener diode can be 8 Dec-2019
used as a voltage regulator?
Q2. Explain Ebers Moll model of BJT. What is its significance? 8 Dec-2019
Compare the VI characteristics of PN junction diode for Ge
Q3
and Si based diode
1.5 Dec-2019
Explain the breakdown mechanism in junction diodes in
detail.
8 Jan-2023
A Si sample is doped with 1017 arsenic atoms/cm3
i)Find minority concentration at room temperature
Q4 ii)Find the location of the Fermi level with respect to the 7 Jan-2023
intrinsic Fermi level. (Given that n i = 1.5 x 1010 electrons
/cm3
Q5. Write the equation of a diode 1.5 Jan-2023

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 Module -3
Q. No. Questions Marks Years
Draw input and output characteristics curve of CE
Q1. configuration of BJT. Indicate Active, cut off, saturation 8 Dec-2019
and breakdown regions.
Explain and draw output and transfer curve characteristics
Q2. 8 Dec-2019
of enhancement type MOSFET.
Why reverse saturation current is more in CE configuration
Q3. 1.5 Dec-2019
as compared to CB configuration?
Compare small signal model of depletion type and
Q4. 1.5 Dec-2019
enhancement type MOSFET.
Can we use Si and Ge for fabrication of LED? Justify your
Q5. answer. Explain how LEDs emits different colours.
7 Dec-2019
Q6. What is the input resistance of MOSFET? 1.5 Jan-2023
Q7. How the channel resistance in MOSFET can be increased.
1.5 Jan-2023
Explain?
Q8. Define overdrive voltage and its significance in MOSFET
5 Jan-2023
operation
Q9. Differentiate between photodiode and solar cell 1.5 Dec-2019

Module -4
Q. No. Questions Marks Years
Q1. Write three properties of silicon wafer. 1.5 Jan-2023
Explain in detail various process involved in the integrated
Q2. circuit fabrication
10 Dec-2019

Q3. Explain the term etching and its type for device fabrication. 5 Jan-2023
Write a short note on doping and diffusion process used in
Q4. IC fabrication
7 Dec-2019
What is monolithic IC. Why layer of SiO2 is formed over
Q5. the entire surface in a monolithic IC.
7 Jan-2023

Q6. What do you mean by Chemical Vapour deposition (CVD)? 1.5 Dec-2019

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University Question Paper

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Department of Electronics & communication Engineering
Department of Electronics & communication Engineering
Department of Electronics & communication Engineering
Department of Electronics & communication Engineering
Department of Electronics & communication Engineering
 MODEL QUESTION PAPER
Roll No…………………..
December, 2024
[Link]. IIIth Semester
Electronic Devices (EC-301)
Instructions:
1. Part A is mandatory, attempt all questions.
2. Attempt any four questions from Part B

Time: 3 Hours Max Marks: 75

PART-A

Q. Question Statement CO RBTL Marks

No No. Level
1 (a) CO1 2 1.5
(b) CO4 1 1.5
(c) CO3 2 1.5
(d) CO2 2 1.5
(e) CO1 1 1.5
(f) CO4 2 1.5
(g) CO2 1 1.5
(h) CO2 1 1.5
(i) CO5 2 1.5
(j) CO3 1 1.5

PART-B

Q. Question Statement CO RBTL Marks

No No. Level
CO
2 (a) 2 5
1
(b CO
3 10
) 1
CO
3 a) 2 8
2
(b CO
2 8
) 2
CO
4 (a) 2 5
2
(b CO
2 10
) 2
5 (a) CO 3 7

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 3
(b CO
3 8
) 3
CO
6 (a) 2 7
4
(b CO
3 8
) 4
CO
7 (a) 2 7
5
(b CO
3 8
) 5

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ACTION FOR THE IMPROVEMENT OF SLOW LEARNERS
Assistance for Slow learner students:
1. Additional Assignment
2. Extra classes
3. Flipped class
4. Tutorial Class
5. Seminars
6. Practical classes (if applicable)

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 ACTION FOR THE FURTHER ENCOURAGEMENT OF
ADVANCED LEARNERS
Assistance for Advanced Learners:
 GATE classes

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 COURSE EXIT SURVEY REPORT/ANALYSIS
No. of students Weighte %age
given the ratings Total CO Level
CO No. Course Exit Survey Questions d CO
Responses Max. Count
1 2 3 Average attainment Attainment

Are you able to understand the significance of

18th-century biological observations and their role
CO1
in shaping major scientific discoveries and the
1 32 23 56 2.39 3 79.76 3
classifications of organisms?
Are you able to understand the concepts of
excessiveness and dominance in the transmission
of genetic material from parents to offspring.
Furthermore, students will grasp the role of
CO2
biomolecules as fundamental building blocks of
1 15 40 56 2.70 3 89.88 3
life and recognize DNA as the genetic material
responsible for information transfer at the
molecular level.

Are you able to are you able to understand the

principles employed in classifying enzymes and
CO3
discern the various mechanisms involved in
0 2 54 56 2.96 3 98.81 3
enzymatic action.

Are you able to apply thermodynamic principles to

CO4 biological systems, enabling students to assess the 0 7 49 56 2.88 3 95.83 3
energetic aspects of diverse biological processes.

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 Are you able to Identify and categorize
CO5
microorganisms.
21 5 30 56 2.16 3 72.02 3
CO Assessment method CO1 CO2 CO3 CO4 CO5

Direct method (IA Test, Assignment & exam) 1.50 1.50 1.50 1.50 1.50

Weightage (80%) 1.20 1.20 1.20 1.20 1.20

Indirect method (Course Exit Survey) 3 3 3 3 3

Weightage (20%) 0.60 0.60 0.60 0.60 0.60

Final CO Attainment 1.80 1.80 1.80 1.80 1.80

Average CO Attainment All CO 1.80

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 UNIVERSITY RESULT ANALYSIS
ECHELON INSTITUTE OF TECHNOLOGY
Result Summary [Link]. 7th Semester, December 2023
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Result
Tot Abse Pas Reappe Pass
Code Subject Faculty Declar
al nt s ar %
ed
Dr.
Fiber of Optical
ECEL-701 Kavita
Communication
Singh
Overall Pass Percentage of the class

OVERALL CO-PO ATTAINMENT

Mapping of Course Outcomes (COs) and Program Outcomes (POs)
Note: Slight (1), Moderate (2), Strongly related (3)
Course Program Outcomes PSO
Outcome PO PO1 PSO
s PO1 PO2 PO3 PO4 PO6 PO7 PO8 PO9 PO11 PO12 PSO1 PSO3
5 0 2

CO
Avg
1.80 0.96 0.80 - 0.60 - 0.60 - - - - - - 1.20 0.60 -

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