c.
Ions
d. Protons
BOARD EXAM 8. PN junction is formed by:
a. Two metals
QUESTIONNAIRE b. P-type and N-type materials
c. Insulator and conductor
d. Voltage application
1. Semiconductor materials have 9. Depletion region contains:
properties between: a. Free carriers
a. Metals and gases b. No free carriers
b. Conductors and insulators c. Only electrons
c. Insulators and liquids d. Only holes
d. Metals and vacuum 10.Forward bias causes depletion
2. Silicon has how many valence region to:
electrons? a. Widen
a. 2 b. Narrow
b. 3 c. Remain same
c. 4 d. Reverse
d. 5 11.Reverse bias causes depletion
3. Energy gap is defined as: region to:
a. Voltage drop a. Narrow
b. Difference between conduction b. Widen
and valence bands c. Collapse
c. Resistance value d. Oscillate
d. Current flow 12.A diode allows current to flow:
4. Intrinsic semiconductor is: a. Both directions
a. Pure material b. One direction
b. Doped material c. No direction
c. Alloy d. Random direction
d. Metal 13.Reverse saturation current increases
5. Doping is the process of: with:
a. Heating a. Voltage
b. Adding impurities b. Temperature
c. Cooling c. Resistance
d. Charging d. Time
6. N-type semiconductor has majority 14.Ideal diode has:
carriers: a. Zero resistance
a. Holes b. Infinite resistance
b. Electrons c. Threshold voltage
c. Ions d. Leakage
d. Protons 15.Dynamic resistance is given by:
7. P-type semiconductor has majority a. V/I
carriers: b. I/V
a. Electrons
b. Holes
c. 26mV/ID 24.Zener diode operates in:
d. ID² a. Forward bias
16.Peak inverse voltage is: b. Reverse breakdown
a. Max forward voltage c. Cutoff
b. Max reverse voltage d. Saturation
c. Average voltage 25.Zener diode is used as:
d. RMS voltage a. Amplifier
17.Rectification converts: b. Voltage regulator
a. AC to DC c. Oscillator
b. DC to AC d. Detector
c. AC to AC 26.LED emits:
d. DC to DC a. Heat
18.Half-wave rectifier uses: b. Light
a. Half cycle c. Sound
b. Full cycle d. Current
c. No cycle 27.Photodiode converts:
d. Quarter cycle a. Current to light
19.Full-wave rectifier uses: b. Light to current
a. Half cycle c. Heat to light
b. Full cycle d. Voltage
c. No cycle 28.Varactor diode is used for:
d. Partial a. Amplification
20.Bridge rectifier uses: b. Variable capacitance
a. 1 diode c. Switching
b. 2 diodes d. Rectification
c. 3 diodes 29.Tunnel diode exhibits:
d. 4 diodes a. High resistance
21.Center-tap rectifier PIV is b. Negative resistance
approximately: c. Infinite resistance
a. Vm d. Linear resistance
b. 2Vm 30.Schottky diode has:
c. Vm/2 a. High voltage drop
d. 4Vm b. Low forward voltage drop
22.Clipper circuit is used to: c. No drop
a. Amplify d. Reverse drop
b. Limit signal 31.DC resistance of diode is:
c. Store energy a. I/V
d. Convert AC b. V/I
23.Clamper circuit is used to: c. V²/I
a. Clip signal d. I²/V
b. Shift DC level 32.AC resistance depends on:
c. Amplify a. Temperature only
d. Rectify b. Operating point
c. Voltage only b. Amplitude
d. Material c. DC level
33.Transition capacitance occurs in: d. Phase
a. Forward bias 42.Voltage multiplier increases:
b. Reverse bias a. Current
c. Cutoff b. Voltage
d. Saturation c. Resistance
34.Diffusion capacitance occurs in: d. Frequency
a. Reverse bias 43.Zener breakdown caused by:
b. Forward bias a. Heat
c. Cutoff b. Electric field
d. Breakdown c. Current
35.Reverse recovery time is: d. Voltage
a. Turn-on time 44.Avalanche breakdown caused by:
b. Time to switch off a. Collision ionization
c. Switching from forward to reverse b. Heat
d. Charging time c. Light
36.Maximum power dissipation is: d. Voltage
a. Minimum power 45.LED works in:
b. Safe limit a. Reverse
c. Voltage drop b. Forward
d. Current limit c. Cutoff
37.Half-wave rectifier output is: d. Breakdown
a. 0.318Vm 46.Photodiode works in:
b. 0.636Vm a. Forward
c. Vm b. Reverse
d. 2Vm c. Saturation
38.Full-wave rectifier output is: d. Cutoff
a. 0.318Vm 47.Varactor capacitance depends on:
b. 0.636Vm a. Current
c. Vm b. Voltage
d. 2Vm c. Frequency
39.Bridge rectifier PIV: d. Power
a. Vm 48.Tunnel diode used for:
b. 2Vm a. Amplification
c. Vm/2 b. High-speed switching
d. 4Vm c. Rectification
40.Clipper is also called: d. Filtering
a. Amplifier 49.Schottky diode used in:
b. Limiter a. Low frequency
c. Oscillator b. High frequency
d. Filter c. DC only
41.Clamper shifts: d. Audio
a. Frequency
50.Gunn diode used in: c. Capacitor
a. Rectifier d. Inductor
b. Oscillator 59.Clipper removes:
c. Amplifier a. DC
d. Switch b. Peaks
51.PIN diode used in: c. Frequency
a. Low frequency d. Phase
b. High frequency 60.Clamper adds:
c. DC circuits a. AC
d. Audio b. DC
52.Intrinsic layer means: c. Noise
a. P-type d. Gain
b. N-type 61.Voltage doubler doubles:
c. Undoped a. Current
d. Metal b. Voltage
53.Barrier potential decreases with: c. Power
a. Increase temp d. Resistance
b. Decrease temp 62.Full-wave efficiency is higher than:
c. Increase voltage a. Half-wave
d. Decrease current b. Bridge
54.Silicon threshold: c. Clipper
a. 0.3 V d. Clamper
b. 0.7 V 63.Diode symbol arrow shows:
c. 1.2 V a. Current direction
d. 2 V b. Voltage
55.Germanium threshold: c. Resistance
a. 0.3 V d. Power
b. 0.7 V 64.Silicon preferred over germanium
c. 1 V due to:
d. 2 V a. Cost
56.Reverse saturation current is: b. Higher temperature stability
a. High c. Weight
b. Low d. Size
c. Zero 65.Breakdown voltage is:
d. Infinite a. Forward voltage
57.Ideal diode reverse bias: b. Reverse max voltage
a. Short c. Threshold
b. Open d. RMS
c. Resistor 66.Reverse current is:
d. Capacitor a. Leakage
58.Ideal diode forward bias: b. Forward current
a. Open c. Load current
b. Short d. Supply
67.Diode acts as switch in: 82.NAND gate is:
a. Cutoff and saturation a. AND + NOT
b. Forward only b. OR + NOT
c. Reverse only c. XOR
d. Linear d. NOR
68.Forward bias polarity: 83.NOR gate is:
a. P to +, N to – a. OR + NOT
b. P to –, N to + b. AND + NOT
c. Same c. XOR
d. None d. NAND
69.Reverse bias polarity: 84.XOR gate outputs 1 when:
a. P to + a. Inputs same
b. N to + b. Inputs different
c. Both + c. All 1
d. Both – d. All 0
70.Depletion region increases in: 85.XNOR outputs 1 when:
a. Forward a. Inputs differ
b. Reverse b. Inputs same
c. No bias c. One input
d. Saturation d. None
71.Binary base is: a.2 b.8 c.10 d.16 86.SOP means:
72.Decimal base is: a.2 b.8 c.10 d.16 a. Sum of products
73.Hex digits include: a.0–7 b.0–9 b. Product of sums
c.0–9,A–F d.1–16 c. Sum only
74.BCD stands for: [Link] coded d. Product only
decimal [Link] code data [Link] 87.POS means:
coded digit [Link] current data a. Sum of products
75.Gray code changes: [Link] bits [Link] b. Product of sums
bit [Link] bits [Link] c. Sum
76.1+1 in binary: a.0 b.1 c.10 d.11 d. Product
77.Complement means: [Link] 88.Truth table shows:
[Link] [Link] [Link] a. Output only
78.Boolean algebra deals with: [Link] b. Input-output relation
[Link] [Link] [Link] c. Input only
79.AND gate outputs 1 when: [Link] d. Voltage
input 1 [Link] inputs 1 [Link] 0 [Link] 0 89.K-map used for:
80.OR gate outputs 1 when: [Link] 1 a. Amplification
[Link] 1 [Link] 0 [Link] b. Simplification
81.NOT gate output is: c. Conversion
a. Same d. Counting
b. Complement 90.K-map grouping must be:
c. Sum a. Odd
d. Product b. Power of 2
c. Any b. 1,1
d. Prime c. 1,0
91.Half adder outputs: d. 0,1
a. Sum only 100. T flip-flop toggles when:
b. Carry only a. T=0
c. Sum and carry b. T=1
d. None c. Both
92.Full adder inputs: d. None
a. 2
b. 3
c. 4
d. 5 141. Transistor is:
93.Multiplexer selects:
a. Output [Link] [Link] [Link]
b. Input [Link]
c. Voltage
d. Current 142. BJT is:
94.Decoder converts:
a. Binary to decimal [Link] controlled [Link]
b. Analog to digital controlled [Link] [Link]
c. Voltage to current
143. Terminals are:
d. None
95.Encoder converts: A.2 b.3 c.4 d.5
a. Input to coded output
b. Output to input 144. Emitter is:
c. Voltage
d. Current [Link] [Link] doped [Link]
96.Comparator compares: [Link]
a. Voltage
b. Data 145. Base is:
c. Current
[Link] [Link] [Link] [Link]
d. Power
97.Flip-flop stores:
146. Collector is:
a. 1 bit
b. 2 bits [Link] [Link] [Link] [Link]
c. 4 bits
d. 8 bits 147. Active region used for:
98.D flip-flop equation:
a. Q=D [Link] [Link]
b. Q=A+B [Link] [Link]
c. Q=AB
d. Q=A’ 148. Cutoff means:
99.JK flip-flop toggles when:
[Link] current [Link] current [Link]
a. 0,0
[Link]
149. Saturation means: 158. JFET has:
a. 2 terminals
[Link] [Link] on [Link] [Link] b. 3 terminals
c. 4 terminals
150. Beta is: d. 5 terminals
159. Gate-source is:
[Link] gain [Link] gain
a. Forward
[Link] gain [Link]
b. Reverse biased
151. Alpha is: c. Neutral
a. IC/IB d. Saturated
b. IC/IE 160. Pinch-off means:
c. IE/IC a. No current
d. IB/IC b. Constant current
152. IE relation: c. High voltage
a. IE=IB+IC d. Breakdown
b. IE=IC 161. IDSS is:
c. IE=IB a. Max current
d. IE=0 b. Zero current
153. Common emitter gain is: c. Reverse current
a. Low d. Leakage
b. Medium 162. MOSFET types:
c. High a. Depletion
d. None b. Enhancement
154. Common base gain is: c. Both
a. Low d. None
b. High 163. Enhancement MOSFET needs:
c. Medium a. Zero VGS
d. Zero b. Threshold voltage
155. Common collector used for: c. Negative VGS
a. Amplification d. Constant
b. Matching 164. CMOS advantage:
c. Switching a. High power
d. Storage b. Low power
156. Phase shift in CE: c. Slow
a. 0° d. Large
b. 180° 165. Transconductance is:
c. 90° a. ΔI/ΔV
d. 270° b. V/I
157. FET is: c. I/V
a. Current controlled d. Power
b. Voltage controlled 166. FET input impedance:
c. Passive a. Low
d. None b. High
c. Medium
d. Zero
167. BJT input impedance:
a. Low
b. High
c. Medium
d. Infinite
168. JFET region left of pinch-off:
a. Saturation
b. Ohmic
c. Cutoff
d. Breakdown
169. Shockley equation relates:
a. Voltage and current
b. Power
c. Resistance
d. Gain
170. gm depends on:
a. ID
b. Voltage
c. Power
d. Time