[lorbron vices Chcets

Condu CtoyAlumirium, Coppey, ron(freo eleckvons)

nsolator lwnd, PUc ( No freo elechrory )
3 Smi Condvcfor Ghe, i,ekC.. (free elertron nd hol)
tner9g tand diagvam:
Condothon CondeHkb
band Ev

Evt Valenty
fortsiden
Bond
Gey Ev Concuc tor
insolator Va lency Seri Concector

Eztrinsic Doror mpori by ( -ty)

lGy dopg)
Seni-Coodor for Arceplor Irpority (e-bypoy
inttinsî
(incyeasing
alrome structore t intinsie sc femperatore )
Ge C3e) : 4valency
(4s? 4e?)
The absenre of free îs represened Q hole
At k Qcts nselaor
femperah ore
Ghe
focreog dis rop ted hence
tae bonds
bond become
Ge
electyons Come out of
holer in bon.
ree olect rony leov+ng
N
JGe LA LA
Contenfroation n inhrinic
hole Sem (onducto
electron Concentration îs Cqual fo

Conc. in N-type Sc, hole Conc. in d-tyeo

-tyHpe SC ; n,
Sc P hole Conc. în Phy pe
ConC. io
intinste Se,[Link] Conc. in intrinte SC.
0; conc. in
Alonic stxuctute of ANyee co donp impoitie
impo vitfes ore ad cded
phosphoroos, Arsenfc , Anfimony S, Gtsruth
Called pen tov alent xperifes
(JG.
4
,>P
"Ge
Ge
 teptor impurties (orlbiva ent atomy added
(Alominiorn,Cholliom,ddium fe Boro)
Ge
Ge

(4

hole Corre nt beause sf moments of electron Trom

one bond t anotheY bond,
hole mokiltty les Compard bo Sectron mobilty
add pentayalent 1ke Bb, 4 Valente
cofl be Covaloot bond
is fhee. is Covalent bon)
Can be
valeny
temoved and
(hich is
made free
s

Qrternal by oolev Case Che ,O.0be,'n

energ
Coge otf Si,
* ee energies Ore
ko in Conducon band.
- t o diretion hole Curent be cause of
moueuent trom one bond to ansthe
Same hole move ment

Eneray band diagram of

-tyee o.0lfor Ge ptyee
O,05evfor Si
70.0lev

Ec or Gt
O.65cv
Eo (Donor energy leve ) EA for si
Ev (Acceptor
Ve
energ.
(evel)
23)Oho's laus;
of Corrier s due to e(Rchrie te ld
velocity =) Hp - nobitky of hotes
Ho mobiib y of elechros
Considcr wre of lengtlL) hos (N)electrons eofHh Cross
Sectfonal area A

Nq T: Fmer d'sfance
velocity)
Cument denstty (J)
AL
Correat ( î ) let
LA
electton Conten tralfon (o) J- pre
Chorge denstty (e) |J- P
mobility(H)
Condvthviby(o-)
Coreot cdensîty(o)
Elechie fietd re)
CroS! Se c îonal area(H)
Sn Case t Semi Copdector:
hore p = hole on ten treahon
3=(n2n t pgtp)8
Current flocoing becauge ot applitd potentfal
Elechron Drett Cottent Ja nHa2
Jp Pp2g
hole Orift Current
Difosion Corrent& Current due fo ConcentaFion qrodient.
>electron dtosfon Currentn 20h Dn, Dpore
’ hole ditfusfon current - Je -90pdP dittusion Conara
diffusfon Corrent is because of moven ent of Carrfers
from higher Concen bvafion ho LouoeY Concentration.
lole drft Current + hole ditosTor (orrenk
Je Pl98
T ele tton drift corrent elec ron diffuson (urrenh -
t20,
Einstein Yelatfon k= Boltzman Coniton!
kT-T
Ho n 2

(9th
entury - Andustry .0 technologte (mort nrisaton)
renty - elecky ifitatfon
en huy -Automalion
2 S4
Centy nclostry 4e fechnoglq% Auig data onalysis ong AiML
8mented
hternet of renliy
thing.e virtoad tol'y
(yber Setotity &
(loud Communt
System integrat fon
System SPimulahinn tuofns
Robotics
Advan (ed
marufotturfna Sptems
Prepeity Ghe Si
Aomi Do. 32
72.6 98.)
[Link])= .21 -346orrT ev (for s:)
5.32 n33
At T-3otk [Link]
Cielechrit Contont
Atomscm?
22
ET 0.785 2.23r(0 T ev for Ge
(.2) At T= 30ok
0795 Er, 072 ev
O.72
to,ev at Bock
Duer a Terne
4ntrinsc reritvty 45 S30,000 range oi (00 to ook
3,200 ior Si m-25 for elettrons
1, 200 - 2.7 for hole
- ls6L for eler ron
13 =2.33 or hole
25X 193 1-5 ktolo
D; (30ot) Hremain Corstont
tied offkye
Lronsiriry
Hal! ffor
plod
Metol o Semi Cordortor
olortric
Poreriou'ar bothi&,B

13all vollane V Ed Charae cer?,lP)nf Semi Conder tor

cenbor
= B

Holl coefficient Ry BD
to
semi Concluctor

Condettfvitybe dotermined o u .
mobilitu Can

Con Useel n hall mulk fplics

Proporkional
,wOre Cony tonts the V
here
signal is
VA B1

Re oiaaiatforn of Careys :
GeneYat icn and
P-P.0,-fo afer thormal exti hato
concenfrat ion
Covriey Contehtoon
minori
he rercentag clog
muth hiakcs chag
(on Centrat'on

t minoriky Cort Sy kvol

Chowy.
cM minority Carfer Conc. fall vpcrtn fialie to zio
affer thy eYmgl gitatfor onplebod Cocled.
 derensein hole conter trat fon
retom bnn

Contentralion por

Condilions

dp!
dt
-p'

w(p-) P-Po

BccauSe ot Ehormal excitoon Carriort 1o

eyponenliny
te ime Until ecom btholfon Collod mean Be

dp'
- (o-r)
let

de!

Snieyale both Sdes

toge' -ke

P: e
Continuity equatfon:
Conidoy Snall eleroent
A ole Concenbratfor isP

d 2
>TptdI
hole
Concentvotion s P due to Lp.

an inCreaye Pn hole Concen ratfon per Second

Per c t volnl doe to thermal excitatn

de crense hole Concentrafo due to

Te
Yelombinafion.
Po P
Contfno?t egoaton,
njerted mirorhy farrter
Con dfions,
sten diy tate

from G)

here

dy?
eer): k,e

Theex(e
mìneita carg Caniers n iected de to
bo
gitaton tall doUo

Conents
dr dx

n)

ir
 Cnmbining
e

*etekminefty Cantey Curent is alo talling exponenfalla

dn
dx

dX
de Dn -Dn
Dp
(To)

2lectron diffosion Current is olso fall fug doon rperent,l

nith dittance.

Hale ?fosion Cur ren t t elocfron dfE

Cotrent =0 open
electron ditfotorn
emiConslo chor bar.
Seui Con dueto holes are
Can be appro xfmated bo be
hene. hole drf Curent

t(
otTe tIn, De Tp)

ele chron dyff Current falls cdouon erponent

exponenttaily wtt
dttane. Seuiloduchor ogy
when
an n-type Semi Condurfa
One sld is exrited by tenpevatur e, Flon holes (n i no rity (ov,k
foll
fafl down erponen aly wtth distonce.
 °. elerror iifon fe ho|e difor

T-nggohmt (ans o metal )

1-Ane He (chm4 Caw of mefal)
rtyee the diE Cument TA21
No ror mpunty Contentation,
AN9n (To)
AN9Ho
) Becou se of electron dhft Cortent taone exists
etectvie teld ?n bor înorder for drift Current to
erist.

No Hn
hoe dit Corrent

Potom ttal vor blons otthin gradiae Semni (ondorfor:

0iffofo n Corent

dP

d HpP Gollzman telafionship of kine k°

V,-V, V,In
 |258

An înbrene?e Bemi Con durtor ->

fovmi level: Crath chopter mìan )

N(E)= t here

Postble outomes
Prcoability: TOtal

HE)N0. ot enerystatey
kotal nooot eergys tates

NCE)

Ef fermi level
în a mebal

fermi level is
energy level tohica har proba biliky a
n

ot vpancy is a. ( irrespe ctive of emperatore )

when T-ok SE)=
Haore probaki of entggsfate
at
absolote bemperature
of finotag Octepled state.
uhon T=ok E<Es -) -fcE)E|
energy stales ) qcanbom States belo
are filed oteh electrons.
 marimUM ©neray level tohich olertror
o'k.

T=oK

O.6 T: 25ofk
O.2

- 0,2
0.6 l.0 (

+
0.2 0.4

Py:27 be 736) - wetal

Fermi level tn ?ntyinste Semt Cenduchs: (Pg:735 -’39)

f(E)
4for electrong

N(E) tor hces

(-J(E)

EE)/kT

(Ee-Ep)/kT dE
Er-t) dE E;-E)/k7
3/,

here ar ffetie mases,

+) Semilondottor
-Ee-Es)/kT,
-

N,e
Ee-E4 -E, tE,
KT
 2

2
Fermi level in xtiofe emi Condoctor:
0-fype Seni Condochor
energ1 Condocon band

douo yee added to Crystal tlhen

a given t fem perature don or
atony are
Covductfon band fted. Hence, t wt be
tor tlo electrons rom vo enrax g9p
oy Haraal ogitaer).
Cen Sequen tfaly nasf Ohole pairs
genorafed be veaduted . Sice, feri leye! i at
Hurmally
Meqsure of probabiity of orcopancyX alloro
Stakes. 5t is (lear
Closey to Conducffon band ho to fnditate tuot
Shatey bah d arp fille
by donor teletbron, ond feuey koles oxist Pn
Voferty ba nd.
 No
incresed Huen fus ferni level E,t:
srener than Er
No inYeases Ec tnovey
Thove tocard

Na
moves tooot dy
valantg band
Lrgicnye-glorn
Cenduton Rand TeoD-egfon
Enerqy band diagr
of Pu Diode

E
Ecn
to Contact poten al
Eve
0.2 toy Ge
0.5 4ors?
Volency Eo

nNoN e-t-fe)kr , e
nP: N,N, e
E
 5)

Na
Subsbufing H,5,6
kT

No Na

P Na

2a ue,50,5,s2)
i s l o s

movemeot ot
Tegfon orued be cause
Cavters (ele ebrons ) from n-s°da to P- s?de Eo hole are

jonckion -ve ToLA

by electrones Khereby, in
torme.
elortrons are removed blaoy
be Come Pos?iue fo bagpen ondy at jonctfon.
Deploting Charge Carriers and

Callod depletion Ygiof. [Link]

Juncion SpaLe ch arge caarge densby

Yegon 0.5Hm
Distante from jencton
Eleckeie freld inter tyE

V= Yo
otential
 reckiffer. Cobr
bidivertfnnnd signal foto OnidfttrlioMol sianal.
minimum
veltng \equived ey fernally to
Move fronm n to p sido
0.2 v tor Cne Go.5v for Si
Cut -oif voltage Contort otehial (Vy)

Reverse Satoraion Current :Pgc61)

[Link] majority Cavriess are Coles

maeritya
p- side minoriky Cartiexs
holes
Qre
minoy?ba Carritr
Satoratfon Corent ?s be Cause f minorty
Corriers unctfon,
de notrd (1,) loubles Tor euery lo ise
in temperature. (T)Ao
I,(T) 1(T)*2
Revere Bias *7. per rise in
Yevers e Saforaon Cuho

berause of
mìnority Catricrs
CurVen t in CaSe of ?s
Si
Ohode eg botton

9 for Si
4f
L:1, e (is neglected ) at om Temp (l,600
V is- ve V 0.026V
) 1--1. ( e is n°glecesJ
AvolocC, Break doon B
f Avalonch to'olHplicafion,
because
4n reverse bías iode te (arriers elechrons ?n P-side
holes in n-síO minorl by Carriers ) kly Goss jonthon
nd hit and aeks dis hor becahd
Carriers qene raked. Tee Carrfer s
dep lelion lauer 9enerabg
Catriers cis ptocess Contnuou5
layer gen eratiug More (atriers fare (urrenh
enomrmoosly inCraye btyond Mario lo
Correnf junthi'on br eatdo on. This
phenoenon (alled Avalano break down
due to Avalanr le multpat fon in reverse bian dio do

Dfode eqnton:
J.(o : AgDoPo) (o:ffusfor minoity Correnb)
Lp
I-A9Do de' (ofos fon minoriby Corrent )
?n p P
A820, Pe) I, (o) n

Acrous junctfon olectie dield hig Ond honco

o drift Cortent . Also, tue deffogion
becnuse of Con cen bration gradienk at tae
(onts,

E Vr de
 (de dv tog
This is
Under
biascd cotdff hore V; Vo-V
log P,(o) :-L(v; )
fvom kint Re 9as tlsory

kake

=)
Va No bia Sed Cond?Aon

-(Vo-)

sfui lorily mirerify (arîers in P-bype

-)

hole Conent (a ntype Semi Condoctor t ontFon

jonc
Le
Lplo:
Lp
elechron Corren t Pn p-byre o Jonttfn CI ) ovigin

Len
To tal Current T: Clo) +Cno)
Lo
 )
Saforation (orreot
here

-in Case of (ne Cut în is 0.V

beeause of

I000 t?mes
YeVerSe Satornon
more Ghe dio de at
to Si.
veltae setf Cunent itîs 1nore Compared
Satuafon Curent ?n eA, ohere

Si reverSe Saturatfon Current is interm

at Yoom temporatore

8. î - 1 , ( e )
Ptsel Gne diodt Current
thareby at leser volbanes
more than Si.
(when T Ae cot fn V decreases
dVste -95 mv
dT

Diode Yesistane:
Stotie resistance ynamie resistance

(CReciprocal cf Slope of xy Cne is

Static resistance

VN
1

Dynomie xesi tonte

daal dicde chavactevfs tfes*

->for Qn Rdeal fodo | Cotin voltage 2ero,

ideal diodo foruard
Yesfstance is ze
Zero Yeverse bías do,
veverse Yesis tance
is Zero Go mincriby larríer Curro

:) tdeal de cluaracters4es
n qncd Quadront Forcoard +y-aS
Yevers e - -ve X-ayis
g(62,63) - Piece oise 1fatay Diode cluavactevistes
Sore clarge (8t yonátfon Caçacftonce( C)i
Claug in Voltage
a Cuvent
i
dt

TCe transi kfon Capacitonte is not Cons tant;i

ckpenc reverse Volkage.

Step qrodient junetfen ?

An a Seu?Conduc tor Daode
movement ol Carres
cleglekfon (ryer s tormed cloe fo
trom to n-sic Qud alo
-Ve iohs (Ytafedl P-s)de tve Pons reote
D-side of teplet fon regfon
deplehfon layer , Pesultfug
bothides
equnlliy.
 P-sde cdopod n-side

daple fon laypr -side

juncton is Caled
is tgpe
Sfep oralient (oncfion.
ae cdepletien region is forned only cchen

o)

Charge density, E
b)
N
- W W

Na

c) Fleld ?ntentity hore,

t
Cu is cwidth

otental, v dy?

dy?

dv
dx

V= -9 No lx?-2k)

junc tfon
n-sîdo lex deped junction Noltage is
4 P-sf ale 1s les doped tuo juntfion voltage
2¬
 :(Vo-

you go aprlying Yeverse

volhuge tle deplo,
laey fnereases,
C, de

dv

Next l a u

Difuson Coparitene dorivalfon Z ener ods 2eneY breakdoton

Zener
regulator

Ar'to .dx.
2 Aglp flo)
hore, Current I is giuen by IolY) wtk ro

Lo 2

Drffosfoo Caçalante:(C) (dode Sorcoard baset )

d

I here
1 diode inremeotal resin fane
Eveston

insulator Semicotuctor Go (onductor

Ostinqeitk
cfeneng 9 band dagronn.
A) Dofi driff spes, menn (fe fione c a hele.
mobility, ditt
Q) Derue khe Ohns of a Condutkor.
) Draw tle atomit Shructoe of inlrinsie, n-type a p-hy po
Sen? Conclutkort.
Current ancl hole Correot,
&) Deti the electron
6) Drauo he energy band dagsam of n-tyoe S Phy
S.C Gud explaio.
¬) Define acfion ao.
6) Discos Clarge clensitie fn
in a S.c.
6) Pg.99 (Tabulay foras n T.6)
0) Defne the enevqy gae( Ea) fn fermy
of Temperatore.
6) tobat is Holl eftect pherohana,
Devive necesory
rvotks prafftal egns to mobilty and (large dkesty.
arve applítatfon hall multip ler.
6) Distuss generatforn and Yecon
binaton oi Coieis.
) Disuss cliiusfon chett
curents
6) Distoss Continuity eqrls
6) Dteus akoct injecfed
mincvity
minorihy orrer chorgt, diison
S) potentfal Variatfon oithin Ga
qrenter 8.c (Bdtznaun
6) fer leusl in a nm ehal ikh
Yelevant pth eo Yrelafone.
feymileve l [) 1 intrinsic S.c
)
 ) fei level energy Band
) ison eo

) Diode eo
vechfrer both
a) Volt autpere (hatacterîc his of S.C diodi
foroardb
) AvalanÛe multfplcaf ion
8) Revere Satualfon Curent
&) TvansîPon Cacleitlnce.
t) Step qadien junthon
6) clharge Control
vestrícton
kle cderiv definitfon of dfode fheteby
of Co
Zener dfode:
reqolator output voltage Shoukt be
maîntofncd Conn tant
Hu lood
itrespechiue ot (hauges
resistante doice
Ve
u Osclabor
Voltag Con tro led - ve Yesistau(e evices TT, tunnel da
OCotrent Con et rolle
-ve resis fance devices
CR
voltagl renolator circoit (stlicon Contollad
I’ yectifer )

3215

Poer 3 w

3
200mA
R
200 S-ls
) R 0-05 ks
50
 blw zerer breokdouor e Avalonche breok doon.
A)Erelafo V- Cuarot he?stTca of zener lfodo G
ho 7enor díode Uoltage rqulator.
Yequlakor Zener dfode
6)Desfan Simple
8) rao the bond claqram tonnel diods
ener of

Qud explain Fonnelu Plenonenon.

&) wfA kele erplain
enorgy banc dagrams
fhe Vol-ampere Charat heritto.t of konnol ode.