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Basic Electronics Notes.

The document discusses various concepts related to electronics, including semiconductor materials, their properties, and applications in circuits. It covers topics such as types of solids, the behavior of conductors, insulators, and semiconductors, as well as the functioning of diodes and rectifiers. Additionally, it explains the principles of current flow, diffusion, and drift, along with the characteristics of different types of rectifiers.

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shristikumari8235
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7 views91 pages

Basic Electronics Notes.

The document discusses various concepts related to electronics, including semiconductor materials, their properties, and applications in circuits. It covers topics such as types of solids, the behavior of conductors, insulators, and semiconductors, as well as the functioning of diodes and rectifiers. Additionally, it explains the principles of current flow, diffusion, and drift, along with the characteristics of different types of rectifiers.

Uploaded by

shristikumari8235
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF or read online on Scribd
otisht fumari chasa- B-tech Subject - Baste electrontes . Keno. — 2104130002 OPN quretion diode - @Katifiv and filters @4IT @ kT MosFET © ‘Trtegrated Chreutt “PN, qanction_diedg a xX SemPeonductOr Matenfals t~ x Conductor — ‘he -eren cenducton 1% appied Jo ony moterfal shat will Support 4 generous stort of charge when a weitoge Bouler #4 oppsted across ts sfoorefrats. Example ~ Copper x Inculaten - An fnoulotor #2 a modental Shab offers 4 very Joud Jeusl of CanductiuFly then 4 voltape Bs Yolbpired - ‘ Example — Mica K Semiconducten— A Se hos a Conductivity Jeuel Sore wher extrermes~ef an. “&rculater and a conductor . Example - Germonzum (Ge) » silicon cs?) Aome of the unfque qualities of Ge and Se axe due do heir ajomfe structure. i , 4elfeon , genmanfum , Podtoect baroien. Hetmum «phos phote. direct barter . Paoutdtog piastng - eee eee eae “Ail the gemfoonductors behaves Jike insulator at o°ke po voltage .~ Control flow 2 through Beachy - Moors Jaw — In every Components wtf be doubled . “WIL “be half. ehostin inteonducdot & 9 moafestad tha: 2 befuieon she f Current “By gemiconductor 18 Month the 70 of devite’® Bre ny x Types of Solids t— ene Jo mo. of Valence obeedrons . Conducton ~ . of Yatence. atectren. < 4 Sodium 5 Magnesium > ~Alumun fue it) (12) (43) cad @ ® Tnsulaton - No. of Valence gleetren. +4 Nifrogen@ gutphurll)-Neon (10) yes @) (6)e-o.2 B) @ Semeconducten - No: of yfalence électran = + fa capbon. 6) + 814) » OF (32) we @ 2) > » Basie gleotronits Lab AM - familinttatten. Seth vVanFous Chertrants components instruments ~ a ee Components “Measuntn ensteurt + — Multi irneten Active acsive (Anoloa $ a BIT _, Resfeter C8) ea bere Fer Inductor CL) wpe Mos FET Capacitor tc) — power al e cmos ,opamp — Prode sat ql supe outer Measuring &nstruments Sar aceon C Analog B pigttal cRo/ P80) Fewervation of. signals. — Cathode. va e@seffloscope : —pigt taf ° 2 rage oscitfoscope . x& 0 eee ¢ charachen of: > Signal. Amplitude — functon Generator. cfreuit ~ Controlled flow eof current — Fectfier on charge carrier a Am plifrer : re eee materi _. éscillater ( j — filter. — dom epouset high. frequen for Electronics - estetance B 8 Roy OFs oreat Britafn tfave AF Mok JoRy GoD, MIIFE- Gre: ; Inductor - measure = Th tregated ciecutt Cre) 2 Rocket: a 4 viet : — conducttéen sand till. bE embay. , En fnsulater » : VEG ty Effect of- Yemperatune ryjatenfaf — “ —ve Coreffrerent resketance of -temiperature . FE +empenature Fn crease = ayesietance be > yet decreased: ax colour code _ poke, wyeter o> condtton = @ -An Absolute termperatung (2 Above Apsolute -temperature. tune Semh Ar Absolut] fpempera conductor pehoves sthe Sosulaton. (2) Avove Absolute fempenature Semiconducten etarts conduet ng. sharing ef cleetnen ca. x Types of semiconductor — “Intefnste -Addiing- Gxtnfnste. Sem fconductop Eempurtty Semicondutter (rare form) (tenpure fosun) Ge st ina J seo Jorgby available n-rybe rye > Keverse gatunaier se Jess than Germantam, : —> ~Hinhreke . Semiconductors are pure Semiconductens, E —> “ig -free electrons PL the mate’) dug only 48 matural ccauses va mown 8 Srirbns carnfens . ee _ykemirenducter uPke Ge and sf shave @ Me ative ern erature Cooffrerent as thelr registante decreases with ncrease em temperature - x Extnfnste em? conducten — — The charac tertstes of Sern teonductor mater fod Lo atgnifreantia. by addition. of atems Snfo hy gemicen motertal - pure on Sn4ntnsfe » n be attened certafn eopurtly pune ducten —> For freneas fr veonducttuhty ue add she iconducter. Smpurthy ate fr. ct geri — The a ot rddFoa tempat atom. Fe watled doping: — The Smpurities ong epentavasent matenfals She ~sntimony » phosphorous a osen’e and — Trivalent amnotental deke Boren » callfum » Indium. —/ i whe ane weed gentartadent er atom 8 Me HY f hamtcon ductor. SA ade ane iy Tetvalent ém ere odo fe P- 8 jamteonsiser. —ofddi fon of these eke can Jotally change +thé electrPeal propertes of the Bem ductor materfal. ey > 108 atom of si of seapir8ty cork tal Galfum ~ Trevalent. Xe majority carnfer Bs mfnoetty cappten ea bes | L ; Masorhty carrfer 8, Stinontty carrey, vb Electrons 1 Holes @ ?-+Pe matenfal i- ayort Mfaert mee . . ae yates ehortrons- — Te charge nats and ?P- Jype Semiconductor culudays meutral- mw conductulty of Tn dee Difference betulesn a metal, and a “Semfeonduct _s Metal 38 untpalar Conducts eysount by means: 2F chasse alone. atgn only fe, electrons. > Semiconductor & btpelan. Confakns {we charge Gs fol D ‘opposite afan. carntng pasdt es a yoles (+¥e change) elestnens (~ ve change) Pi ttaston and Deffe current — P h — Movement ef charge due +e Concentration gradient 2 call diffuston. ° ° my Diffusion current — > Negaeg bis —» Movement ef change canprer due to the potentfal difference of Abpifed pet £8 fretd uf called drift. and that eurnenE fs rated drift current. a Bittorence between Diffusfon g Drift current. Diffusion. 5 | Drift Current 1) Déffusten dont obey. > Drift current obey. ohms Jad. Ohms Jow., : D Deffusfon fadependent |, prrft current 4epents from she penmitfaity: 6h penmitfurty « Syme direction. of diffusion _. The dfrection of drtf- curnent monly - depends current mataly depends on the charge wt | on the polortty. of Bn the concentrator | the applied cbeutn®e of carnier, pred. @ pituston doesn’t Oo sequired aseatnteal required Etectritop)- Energy. for pre process bragg, « ot anift Current N guneffon dt 4 Pe N epunerrod ANOAB m= { " i amynelton ’ is WORM l \ Nee KY eye nen) aera af tO) ho} wo’ Ewa e Wy oe we 4 h > Aleal Poh. sols (sagan cay ( ntayer' WY at Btosag + : > -Apnly antennal PG Yottage Jo get Abe doshieg output. } > Biostng usually siefers doa fideod. 02 Vabboge, op eurent applied do a closminal of of. efectronk Component Such as a diode , drangistor om Yoecum qube tn a cfrautt tr which Ae afonals are alse present » fa onder 10 eglahh'eh the proper operating. condition, for he. Comporant, — “We paocess of ipuouiding Cc Vaoltoge whieh hetbs fi the. -fanchiontrts of the CPoeustt + % Types of btaskng Se ily " @® zero bias :- uy ia on' —> Fecombinasvoh. of ‘dlectnon. trate —» Joss, of elect (aioappear) i hole. pate. fons are. mot movakle ~ —>-+ates electrons “ane movable . pave i) —> Zoro bfas means ne. external Voltage & abpled’ to thes Pont gurcton diode . Aepieted b geaion. — Charge. Zero bis = aries rpernd carrier. _— Fecombfration of. ehectron 7s ana Ppear yy i Peptetion wegton. ( Barner potent ad - Ne curnent flouS 2 i) Re verse brag — —> P ®t! “Connected to Jowden potentza) and, nets Connected se higher potements —> Width of deplet on wegen. Sncheases. sen ret _potential | alse Eneneases- _ —> no curnent flew ~due to mayenttgs change, Carnfenr. ra Nery. dese mount ~of- eurnent , will plows due’ se) she psresence: of Mion tty change Carpter. —s And thie -tuorent & called reuens®. gaturation eunnent ob Jsealage cuprent - > tha diode .& “peuerse biased, the valtage at the cathode x hiyher than Shak ot the’ anode: +ve —> forward bfas er biesing & uvhere. she evley, Nettage fe detrveded acmoss dhe P=N guna, afode, . Dna forward sefup, the P- side ghe diode 2% attached te the Positive dermfiol and N- aide ge frored te the negate arde of dhe batteny - of = oFV f Knee vottage Gre = 023% et Sa Veltaze, - “Te exweuceme the pbanerer of Fe ba ince Volta: er cut fn Veltage, — — The fnee weltegs Reo the fox uscd veltage ak whieh th cupnent hr ghe gurcton begins te rapidly “Encrease, . _>» Break down yaltage - %& he reuse at whPeh PLN gunction of a dfede -fosle due ge oa Sudden. Snrcrease Fm neusise curnent - A —> When a weltage “32 applied to the forudand chonactenteticS of a dfede , dhe yzunctien craptdly expands. Knee volkage _we? ose ExperPment -3 ; Be 4S Shady and verify. the YT chanactenret cener drade . Circuit diagram se @ Forwand biased ® Reverse biased :- = Te Ta fh ja) : Gon) veer te Veorte oy Ls ges li eat Vr Shera: te Ve Cvoit} cup fa ony Observation table :— Snos'-y ~Zenen voltage (vz) ) zener cunrent (tz) A w Rectifier a) —» Bectifrer creat ® a cfrcutt whieh seers AC Voltage eto. De veltage. a ston of AC 40 DG, but not Pure DG which means gome ve alse puesent. — Conver pe, putsating components o& yw Types of Rectifier - taf ware rectifier Full miave necktie CHWR) CRuR) : ‘ v , Centér tapped fad Pa a. Bride i wR. veetiffer CHR) em. alt wave APP aw i el Step dau a. lp signed Sranefoimes Bah atipiitied : ctroudt of 1% Te feolate goat fie cfoenkt prom He eo zh olf wave syectifier converts an AC, af hal to DG by. passing worther yhe negative on posite half ayes op the wavefoum and biockfng +h other. BL ee ; Half Wave sectiprer alles ent J eye. of alfepnatin veyrpent te boos pheough “t, wurhen a afingd p-n qunction dfode fe Connected taith.~a dead eststor fr serve’ combination, fE faxms.a -half wl ; 4 Halt wave rectifier that male use ef oni one diede to transfaxm ae voltage to DG. > The cunnent can pass sponse a dfOde. one when fF ge foxadard biased . J} # Working of Haig wave veetifien — o > Half asave rectifier uderkts asa atep -down yeansform ~er dhe Jefr side ge the. .psPmar side and sifght side fe the’ secondany Gide « “she Voltage, fe connected’ jo the puimany stde and segondany, gtde fe -2quipped uSi¥e diode and whe Jood. be = oh bigh AG voltage & applied to the pximary gide “of the transformer. — > bis dfade udouks, St & fox dard p fared > The durfng. qhe postive half cycle and severse btased durfing negate half eyle. — att acts as _ywhen the diade ue fawudard bfased , Closed. gutitch wshile fr syeunse biased fe act a3 pen saliteh, 4s a result »ne- Cunment aan flow 4o the. Joad and the Output voltage ®& equal +o zero. x Disadvantage of Half wave rectifier — >) fouder doss — [ow utp + lok of nipples. + Neltage output — pulacching. pa. He Auenage value /Dc Valug :— Taq = f ade 9, t oS th = Isto we o< wt ew = 0 AS wt ¢ 2 on - ‘ Tag = : 2 a ! a ut Bop h xK ax | J. tude + : nat | sab eda ag 4)] Tde = Lmyy a Tac 0 HA mean Square (Ms) value = Toms = | s JP rede as es see - fi ™ fn 2ut (at) a J ae , > | tm? fee e Ag 2 ~ : 7 x = Tint cust - ahitot) Aan ! = | Im” x79 -8+0) AN : } Je An Ca Gectifeatin eyfiefency, 3 t/p AG pouser x g o ( ; x t . Gr , 46+ ta = Poe Pac Pag = Tac® Re = [Tem \2 () a 1 forviard Pe Grode Fag =. Trms™ (Rs +A +R) x os and - puactele diode > cating voltage (0) Raq = Linms (%F +R) *(@)* (oF +8) . oe Moe EO Re qr ake Cap +R 4 collet 4, «(Tae Ru = 6-40 ibe 14 Ex Reo ep at Re > 0-40 max = 40 “/s pebance tpple. factor (8) i the satio of RMS salve of Ke Components do the pe Component #3 called ripple factor. — Ripple & the fucuating Ac componen E puesent fr the output, After recti fications Ripple factor (&) = gons_alue’of AC Componmt De cornponent value. = Tac! Td¢ © “| Ease {io 4 Te = Tac = \ Tims - Tde er e a # Thes —1 [2 oa Vier es Rey _ 4 | hee tel, ace ufflcation factor t— $- STOR = poaser delivered ‘e ther wating of ee i: Tae Be = (2) Re n = Im* Arn Rie Foc = Vrms xX Inms | a = iNm om Expertment -4 AM i- aiady and. observe the output warefaym ef 4. Half wave Feetifrrer with and wufhfheut ae Cfreutt: dFagram 2 YN ulfthout filter — * a) With filter ¢— ee Re ° ns chorgtha zB deeb araneg — Capactter . Desfred — Pe wee niendeshred ~— AG- HR of P «4 ° Ppple factor t Be ote ANa FcR & Half wave rectifier: — Vae = { j ee ae : | freg, out = freg fr. Noms 2 YO ; [Link] dfode sot a ye 0% gf = 2d TUR = 0-28F pry = Ym : * Full Wave ‘Reetiffen a Center tapped Bridge tybe - Fuh. Nov of diode=2 center +4P ynanstormen... @ foustard al’ oe @ Peg DEON Dt @ Dg -ofF @ Pry pa On Sa F pe HORE oe fl ral wave rectifier — Y @® Vag = 2m x @® Yoms = Vo Na @ = 81.27% @ ss = 0-48 © We = 0642 Gridge tybe (TUF) = 0-82 ©) FIy = o tm Bridge tbe (#rv) = Vm ® Sout = 2 fh Cfrequancy) w full Wave rectif'er 3— + A full ware syeetifier & defined as a seetifier that converte the Complete cysle of alteinoting eunnent pulscding De. —> The center tapped fnans foxmer ult dwt wectifier dfodes & used Sm the Construction ot a Center tapped full lave viectfiers > Tashe PWR she capactton & used fn He cCPoeutt to seduce the Hippie facter. we Advantage of full wave wectifier — —> “The syectifeation efficfency of full ware areatfr fe double mat of half mau seretifier —> The oifpple factor & ful slaue vast fer fs tou hence a aimple filter & spe output Vollage and 4he | output u pouder tie fr Gast asave vyectifiens arg Fgher than thay abtarned using. nod ware syeolfien. it } ” disadvantage of full wave syeetifier — —> Full, wave syectf'er need mone cfreuit alements Ybon. ithe Half usave syectifier awbich makes’, malifng H costler. . — Full wave syeelifier are nat Suitable fo Wwe whan a amall valiage & Jaquired Jo! be, oyectifred , 4 : a> Or & Lilter H Aleetnonke filteh —» filten wet an electrente raat sompored af capaciter , Prductor’ oP combination of beth. and — connected betula dhe sectifien ‘and the doad 46 08 to Convert pulsating pe se pure DG. MW There axe bot jwe dype of filter :- @ capacitor input filter, @ chek Cinduck or) Snput filter. @ capacitor foput flter- tai + aly, ot er S. Spa] ae Os ae Flas ~— aes , ¢ ure Tulsohng oe filter @ Capo citer filter (¢) @ thductor filter cL) @ q filter (ity) @ Copacitor — pg — Blodk 6 oper, cFreuit $ (Parallel) fe => pass $ short cfoeurt? Xe zgh =: zs gue pre DO, 420 whe XQ HE » f=s0 He Xo 2 finite Inductor — (genfes) Xe = qe ~yerte Pas $205 Xe 20 : i AG > fs 50Hz- Ll : Xe 70 r ye wy VT chanacteokH’es of a Semitonducter disde, *- we)... eye Te Ma ro ye? Tp 7 omA ya Cvelts) -v4 i Kreg veltag ea R8 qausn Hen diode- 1 ae Avalanche Break dousn Zener preals dowh —> lightly doped =s dfahiy doped —> Thick depietiion. cegfen. Then. depletion. regfon. Laat a. velocity of. charge, Lo¥R% = atectr® field Carprers encreas Y Sgneaes thetic ener also Anereases. dt —s Pracki cally mob P x ak dousn. Mechantes Sq P-N qune s ossthle Haers posstale, . 1-4 a a & x Diode. Equatfon i 4 oar Shocks ley"® equatton on Diode equation . 2) aS [em -t] Ty = Diode current (FB) Ts = Reuse gaturabon. Va = dfode voltage grat ce 17 Tdeghity factor oer 2 Nt aRT ko Bolt+zman’s constant = TO Foor jermperafune > 2% 300°h ‘ 4 — change of electron Ce") x igi 4 demperature eh. Seni conduatt diade'- —> Tha foward bias segfee dhe > chaiotinkstie of a Semiconducter dfode anit at. dhe sale ef Q2ayr m/s . > Th the deuense os depron” AAG sums current of a ethic dfode dubhles for baer 10% nasty tem peraturr —> Pewse bruakdewn voltare of a Lomfeondie® Stl dnanease Ate decmease . x “Fesistance of “dliode t= Pc op stat Fefatonce AG oh dynam & Ryptelen aa a x ‘pant Rag = ANS iC i ae operate Ta 1 Porat 4a Bag = Mee Tag rx ye xx Fullwave Festtticn wtth. Capaciten ilhen so te ‘Recti ffer of aSfthowk 8. . : one eee fnput on Ae Powder +04 HOR de “output power obtained fs 40W- @ what te tne geek freation effing. (@® what happen +o syemaining co. g ffclene = outbul> thpat + = MAO, = Oo xo" - woe 0h 5. _ 31 4a 96 Seal os 2 an ye RL 400d gow = $42 nue E 80% | n Ae Supp! ot o30V applied +0 4 j half ae © peetifier cfreui t- through a transformer of- ser natto lost fod @ the oukpult ~ (a) ne. (peek DC volt a4 €- fnyense. a ato de,. to. be Me Re Na Ne to: Ll Marc - paiftnand. vet tage a New = 220 xT = 32s -3¥ Max Seco ndang vo (tage Vem =o Ne » a20:3 Nr Non = 1 4325-3 10 ; Ma = 32° 58V Ce) Vpaq = Ym Ge = 3253 oo Q Teak “Srusue’ uartars = nd) 2B 2i68.¥ Ds 48 4 dfode hav fing fnternal nes fetan ce coon . &> used = fer HW Sin JR the applied vat = oO ofrust ahd dead pesfstan + Boon . {irda OT » Bpe , trms- ®) Ac power wnpuf- and DG pouler output . @ bg op voltage Effiesency of- sectifreahion. Tp = 204 iz Mot soginddt Br = 00m ; ym = 507 eins SO. oo6d Im = er * (20480 Bate Chet Ms seimamP toe Ta 2 SL w taemy tM a ot ‘ot = 80h Inms = Ten oo 2 @ Pac > Tde* fc bd 19. dN ore t000, = 0-301 att 2 Paesece tamer O% tt) = (a0gyfan (204 99° = oteg, Nate we De oe voltage. ¥ 4 You = Tac % fe A 7 iqea xia? & BOO | = spo ¥ pe ap panier AC. YP pouser = o90t i ——_——_ x7 100 ©7638 = 3g 7+ & enl NO-6 ayoea— clipper Pres ¥ clipper 2 —> clipper 08 dPode batted cfreaffs dha ernplores dfode to clip autar some portion ef 9 input stgn al agithout dfstunbfn 4ne nematnfng: part of the fnput cifoat. clipper + ; Ry Senses Tanabe) i,j s yy parallel clipper posi Hye clipper — SAS ah dentes posttive._clippen + — cae w © L L 4S, x eer ea _ sae lev > —lev @ we i~reasv »s De = FB ake . | tp > SV peal Lee eter et a ae ee T a eee 7 P Combfnatton : . b. 0 ——f ee > clamper Freatt 2 7 , —> clamper fa circuit shat amfts dhe entire leush ef 2 Srenad toa Atffexent dg deusd- clamper efreutt 2— pb Positive clamper Negative .-clamper - w positive clamper :— e tuto Vt peak do aN peak voltage & Same Ae go eu St “ r see TO <— xNe gow —> Voltage will Sane fn goth. “dhe clarnpen- > -AclPve Components — -Armpltying Sh atocher : —> pfede. cannot> “Arm plify a % Sfanad. | * Voltage multiplier se) 3 to an electrfcad Pelrer nefer. Fe conte fers srodes and capotiton whitch anuttfp [Pes & alse convents Aq to PC Voltage and seed fieato done vathg voltage multfplien . —> yoltage muttiplier cfocuit mulftpstes dhe fnpub signal , do usually the fo put +o 4hie emuthiplier areutt used Jo be an AC Signal. and the: a —ieetifrer the gutpul used to be a DO voltage buf unlrre : the syeetifier ofocuit the magnitude of ? jhe pg — algnat used to N Himes abe p fhopeages : Voltage ond ; muthiply fing of in of: auprent % foput signal. —> what fe the “use of multiplier cfooute when ager can. Encpease the volta st by uafing ibe Step up transfexmer and the srecH feb cfoeuit 2 : = of we have put voltage vin and use a step up “transfowmer as ue ag {hg syeetifrer c&reu't then alse wWe can mubllp the foput $fonal » But &n by uséna she 4 : +h& case F a I he F Hep tb ¢nans-faxmen fhe | ze ans e&. Cast of th me oa k elt «fnenease . f ‘ great | Pe 4 Cy Ch Voltage Wnrtipths x “Types of Yeltage muffiplien - ® Noltage doublens > Vout = 2 fn Yon Q voltage iplen =—> Yeuk = 3 uit @ Voltage quadruple, —*) Newt 2 4 Mtoe > Whe Yoltage cloubler cincutt’ consfets of 4u90 dfodes and sudo capacitom oshene each Comb natfon. of drode capachton etecuft share posttive and megat ve Gttenation also Connection’ ‘ef uso capacitors deads do double voltage die &nput Voltage . ee APmilant a each inenease faa Combination of le Capacitor >" Aoubty'pltes fnput voltaae trhene voltage giues tniplen Our = 3Vin and voltage quadruple gives > Vout = Af x Appifeations of voltage oe => Cathode Ray: Tubes > X= 970 Sytem 7 ‘lasens > Toh pumps > ElectrostaHe System > Travetting wane Tube yk Photo diode S— oeea ge —r photodiode fo a PN-qunction dfode she Consumes Jight energy. do pyoduce oh clectn®e cunpent. ‘They. are couse called q photo - detector ya dignht detector and 9 qphote - genser |i photodiodes are, designed 4o work bo syeususe bas conditen. > Typreal photodiode ane silicon. Germanium and Indium gauium argentde. Aymbod otf photodiode 9 ae Appl'caHion 4} photodiodes '8— _» Photodfodes ane used & - a tog. cPocuts — Solar cet! panels a detect! on cfnoutts a bignting stegul ation. — optYeal communication eta: - — > Photodfade area elass -of Atodes dhat Converts. aight . enwigy . to electnfetty hefp estking & exacHy the cpp He of LEDs w9hmh ane also, diodes but they “Converts etecinfelty to° sight enudy: dg weted ( Unt emitting: diode) 3— _>LéD om Lgnt emfttfrg, diode fe a tight Source aeuiee. St sietease ufght when cuerent gasses through ft. she Led ‘Concepts based Oh a Bemfeonductor deufce ushere holes and — eleothoneg “SecombPne +0' puoduce enerag fo the foxm, of photons. an Ee Anode TS minose “The ted fe defined a8 a b-m qunctob dfode with an ences po Se the siange soguired fase. ust ble» igh puioduction - > The 9 Semicenducten anstet ee aera 7M uncon and a lie egion betutean them. SE gun ction. posses rane carol ers bales Crositive choy — D- qunetion posses mozordty cappters electrons t siggattive charg Ugnt- Emitting diode... bs Coloured 4 LED ¥— —> white Led — Blue Led => Ged lep — teen LED — Rap ted C fed. Green, dtue ) = Celoun changfng. led Applfeation of Leo, — pecerative Jaht —> Flash d?ghts —» Trophic signals i — Medical head lights Ded ’ —s Camuxq flashes jou —, bate Communication - % Advantages af Led :- —s afres. ( Small to Jange ) Meo ray — low energy. consum PHen. ? —» Different ceteurs and shapes —» Longen wife ae High fntensit ear, costing. effect — m9 Hadiant heat —, Tmpousd 9a Ste f& greater than othens . —» Smmediate Mlumination + tay bnptiness x Pirearartges “ — Hah cest — winter etfect + No heat emit , Temperautt Sensi Hv — etect oh abildtife e vy ‘4% UNIT- OL Reeder Bn ns BIT (Sipser zunctfon “Teansfsior) Transfer + esiston ‘Faved Lp Se w PN qunction diode - a rage Symbol x SIT | aL = zee ea Pg ae (Bere) wet _» “Frere Zo two type of BIT :~ oO ene (oO) nen K Modes of operation :- eset) oO Pn) a ee forward eB —> Saturation 7 obtased > Switch CULE, 6 cut -off — ef etek dead 4G (orf switch) eB GD ) ae? Amplefier core? Fea 7X ie el fn ian of ransutor 23) Amplifier: mete fm ton Sehieatn 8 enitten ~ highly doped bee Base - Ugntt doped » thé Cowedtan - wyoden ately doped . x Wonk fing of Ne gransiston N =) Woot = BA 898% [Ret] Te 2 ale +0 ; ee ge Delf Current N east Qeusr Work tr oO NP iW * Pda a Kc * stransistor — | tased. Base, region oe Aarro 3 and Ughtt : Tope F 2 Collector bass Mode ~ Emitter base : / Sunction. z gunct’on. Active : forward 43 E, urdlien Fortard Forward off Rewunse Reuse see ccles pause 5 G = Delt at 21 a oe @ per tie = XLe + Lem _s & fe the qrancton of Ane ota current = exhteh. represents hates Hrautled from emitter goross 1h& base af to Cottectow, Omni Her Sueh. Te = Ie +8 To = XIe +2Leo then Tq = «(Tat 2e) + leo on BGK) ee = Ig +Teo Te = Defining R38 a Se ma Stud fe : of field Effect Yoansducey and, ©/P chardetestes ~ Soure® Fey & we Ww Trqnstster a3 20. Amplifier — Ao LMA KS KA we ANBAR SH sv Ska cc °fp ad ni dorudard biasing wads x “Transistor confiqunatfons = LX Common Base Confrgurckion GD Corumon Brat tey Configue ahiow Common, cotlector confpuraben Te = Tat fe Te “Ie oe x Common Base (¢B) configun adion i PN tybe - 7 she om te * aS" op ap! 4 : Cc [relate Ebi szetes s cehanachentettcs: = ge Ccommon Base) olivts 2 oe % = . * Tapuk -and output © Thbut eharactentstic eS coh) Fee ee * . a. ace Qut pat. chana étescfe Lfes — (cB) , Active. seqion re AeA Oe = BMA £ s ge nn 33 Te = iMA 4 7 ——— Te =0 7 5 cub off ag ion— Vee Cvolls) Icvle aed Wo Transfigter gah ~Aipiifien ~ — a yransisier acts 43 an ampurfier ie satstng. ahe atreng th, of oa weak Sfanad ; a — > The DG bias wattage Applied fo she Emittey base. qunetion , make tt syemain fn fouwand - bfased » condiffen. hie forward plas fs matntafned sregasidtess of the. Polantty of the Signal. > The dow syesfetance fr input cout , defs an. Smal change fr the fnput, afgnat fo wesut “fn an appsercfable , change fr the = Output. “The emitter Cyunnent caused. Be qhe. fnpul- Afgno\ Condr?butes = the Colleefen Cunnent, whch when flows jhnough. the load Resfeton fr, syesults bn Qa dange, oy Noiage drops acnoss “ft. thus a Gmail fpuk voltage gesulds {nq output voltage , uxhich Shows shat ine Yransistor werks a9 ‘on Ar plifien . #7 BIT ( Bipolar qunchion, transistor) - btpalar “yuinetion transtetor ts qg three - “ponménaf Aemiconductor deuce that consists 400 P-n yunetfon whieh, ane able do ompsify, op Magnify a Stan al. > Tt fa cunnent. Controtled deufee , the free teamfrals ‘ef the BIT ane the base .. +hg Coffector and the emittey, : oat Afqnod st a Amos arnplitude adipuied. 40 the base % available fn the amplified form at the collector of the. +naneisten. shes f& the amplifeat’on, pyourded by fhe: pyt: Note thak ff does syequine an extend? gounce . ef. DG ower supps 40 canny. out othe. amplificatton pyocess. a x opexatvon of BIT i ; > eye. ape tres opesating. yeqfons of BIT: © Adive syegion - the syegion | fa whch te. alate operate “ag an amplifren re @ Saturation wyegfon — he vyeavon F whfeh. the a RE te oh ona , pyocors Operates as a 4usiich” Bueh, hat collector cuppent te equal 40 Saturation, cunnent, Z @ cut-off yegion ~The syegion fr wht ahe 4naneteter fe fuldy off and catty fe equal 4o oH. " wk Types ef = BIT t- @ PNP bipolar guncHon tnansisten ~ —> Oh PNP, the av HYPE gemiconducter %& Sandubiched pefueen the uso P-type. Bernfoondu ctors . é 8 c +8 é ce lithe ye te 3 & —> “The cunnent pnieps the spansfster through 4ne. &mities, such that tne emittey~ base gunetion. & -faxudard bfased and the Cotfertou~base yunetion 2% sjenensed bkased » : ‘ Ps NPN bipolar suncton. tnangi'ston — >. Tn nen, P-type Semieo of Sandutiched Hee i ae Semiconductens a e€ ® e e Topo). Ss CURL te | ae, 8 _» Current Sateufng yhe amfttey', base and catiector has Jane stan Convention of positive while dhe cunment, that deaves yne Transistor has the argn. Convention w functon of Bipolar unetfon Transistor — —> Bits aye two namely NPN ‘and. pne based on doping 4ypes of the ehyee. main teumfnats . An NPN qransistor tonsfets of. +0 semiconductors yunclons qhak have a ther Pp-doped qnodg sjegton and pnp -prqnsieton also consigts- of two) Aemiconducton yuncttons that have a thin me doped cathode, yeqion « —> The flow of. change ‘fn a bipatar anancister fe due to the” diftugton~ of chauge casuny between the SEB sjegions belonging. +0 different: ehange eoncentnation + Regions cof BAT vars Known as the base collector and erithey - Lo Te emitter. oeqfon. Fe highty doped when Companed yo wither ayers: “Both Cotleeter Sand base dayers have. the Se. Zarne. chauge. Cannien Conceninadiong, ee +hese unctHons +, te bose~ enti ge fg “-foxusaud bfased and the” neHion #8 hase ~ Codfector = gunction fe duunse, peared . foywand biased weans p~ dopey yeqfon, Region has ease potential thoy the m-~doped side. , w Configuration of BITiK . —> Reve ane thyee ways 40 Connect Byy within, an eleathke ovjcuit - ushile ene yeumPnal & “the game fox bath ouput and fnput- — Cormmon.. emittey~ has both voltage and cunrent gain . — > Common. collecten ~ has no vottage gakn bub hag a cupnent gafn. > common. base ~ has no Current qakn bul has a wattage gain. ny chanacten'st cg - : charactexistics cB ce Co. Pousey Oakn = btow .- Very hig medium - cunrent cain low | medium igh. veltare gain | Hoh “Medium Jou) ‘phase angte | © 180 a ow Gutput frmpedanc - Mery high , high mnput fmpedane tew © |) Medtum) High Common Emittey -tnansi'stor — %; = Bla tht Dre, B= X/(1-4) B= Common Emitter Cutnent amplificalion factor =" “te Tp + Ks alpha value fe very Jess — tess than 1. 7 Wo charactenistics — > H we plot 4ne current Tp vexsus Vee, ahfe Vee vattage fe the vettage Qenoss +the = emite.- base quin ction. fy the fm put — efoeuit - v= im). * Vee = Ye8* Var wee? WY Nee = Lov Yee = 20V Voe (volts ) ® > Qubbut cha actenfattes ce -transte . ‘ . ~rctive Region ¥ Cutoff Region — for (8 Jransvoton ,. T;¢ = {Te + Popo Preateage When Pe = oy Tas Topo = Teo Teno Reuse satunalion for Ce {ndnsteton, oe cumnent” Te = pig +(B+) Tego fn Connor a ea nee eee bare When Ipzo., To = (B+) tego $0, Te = BIR4+ Teo ee WHHL 4 Treo = (BIt)Teag = £/Ct-x) Teno tek X= 0-996 a then, Ba xf (tnx) = 249 Teeo = 280 Topo M Saturation Region - ‘Vee = Veg + VBe- 67, [Yer = Vee— tt Nee %& verry Smal), tess than Vee , ven becomes ve. : . 5 3 EX— Nice = 0-2¥ Vea = 2-6») constant B-osv t oe cunenk which flaw dug’ 10 eH mse unten <> tealaye cunrenr # Fea » me Babthg th¢ Bat 2 a stg pooper floed of Xen sfyral cotoatyy, dupnent and. the rafnten ance sof: Pk collector ~ anitten volage duntn the qpassag of syria} #8 Known 98 the 4pansisten, Bfasing, “The cfreuit whfey puouldes snansistor bfasfng f Called as Bitasfng chou : — Ha Afanad of wate Amal voltage f Puen. qo the enpuct of BIT, Tf canner be amplified. Because , foy a BIT to ampaify, 0 Agnal two ConditHons have +o be web ~ pistne >the fnpuk voltage. Should & exceed cut-fr_ voltage for the thansister tobe oN: L he Bit should be tr the oefde fegion , fo be obsinted a8 On Amp oe, GS: se On on a Par SA 9 Bose eq Yee _ wr ExXpextment: no» 4 Art, TS Atudy and rlextfy. the fnput and outbut charhetenfetles t Bip fm cornmmen base Configuration . cfreutt Afagram — x Apparatus require — ; opal 80S, — Poder Supply mona — Pes@stor ‘ Brown t 4 - iat PON. Bias 9 soe ee Ts ONAAYR > ' A Input chanactenfaties “* Output characteristics Sno] Veg | Te cua) ny Shh Oe CJ a iv ok HA Com mon chase Configuration — ax Gavan -Ampaifredion facker (%) et Te Kac’ =| changé Pr out pub eunredy. - ak? constant Yee change ka Tivput Cua _y ame nate. of change. Rr Collector cunnent-. to ne change. fru rte cunnent at constant Colleater dare cunnent (Vea) Re now —93,, cunnent Amp ti fea Din acter « at Const. Veg. | a ee Xprachieaf = 0-9 to 0:99. To = * Test TLeahape 7 (Tew 0) Te, = *Te + PeB6 Te = Ta tTe Te = < (Te+2e) + Topsy { Te é 3 To > “Te 4txIg 4 2 aT 4 eBo ! fe / etn Te(t4) = ! ® a a+ 1 Pg, [Te = Pie + too | Common. Emitter Gonfrguoation $— Nea x Canrent “Amp freaton factor ~ CB) B,= ie 40 Te Bac = Ate af Constant Nee Als *& Common. Coltectet Configuration + ¢ | anes Tp current Aymplifreadion. facton (38) ° x Haaieneii, between of gp Bis ae Je = te te 7 PP OSE ° Tes Ipth D> Afe = Ata + Ale DAR = Ate - ATec B= Alc ri Ate th derkur “Tutting jhe value, of a a 6 eo Ate- 41 Diutdin both mum. 2 denen. by Ale, = ade , e Ate 1-— Ate Ate ced * Ret ee Piso, Baver L- : te Perachteal wale = 290 te 500 eco fe Té Ip Ie = Ke (Te + TcBo Te. = BIat Tego a temp. dependent quantity for Ewsy t0%e aise th temp the vajue “of ean wu =6—bes Jouebled- v e mn SH, Early Cffect *f base Wwedth Modulation, ’ To = “Te +t feRno Tg = <( Tat to) + tae To = XTB4+%To 4 Tepe Te (i-k) = <1e 4 fen, To = Sg 4 ! Lewo ix 8 LH Ig = BIg + Teeo alee | Teo Ea = Boo a = TeBao 1-4 Te Ale Ate ces Ww " y u , Ate XTe + Iepo Tea + 2 Ate t Ate Ate - Alc y= ATe Ate- Ate 2 Oye atatding , both side =. APe Ate Ate L 1- ATe ATE... pti Ale ATB Te = YIgt | Transfe for bias ng i Bp Vee po Fh 100 do 600 opr Yee osv £ ° ae St x Stablisation :— > The puocess of ee ee independent 4 waseaction fe Hrown as He Need fox atabiGeittow 2— Atabicabion of operating oft £e recess asuuy. due the pollouring Sse tne yeason — Pri dependg of te Ere See ett prone stablisetten . > Tndluiduadl vasuoder —> Theymal tun Sut dictnuetion of 817 & called 4haxmal funvdey on unstabliiced Pt ye Tend si Ty I¢ = PIg+ Xcao pn Ito Te PT6 + CB+1) Tewo _, tote r&e fn temp Tego audith be double . * atabisi ty factoy :- (6) : “>The extent which the blasting kraut Bs Successful Sm cl weeptty Tec constant ufbh the tanfation “ot rego measuyed bu etabidite facto, zs _s The sate of change of Collectors Cunnent atth. tespect to the, dea ‘ Kage Current at Cometant- & Band Ip & Called apabibite fdotoy . $+ dTe oat, Constant p ¥ Ig d Teo 2 Tdeol untue o> 2 8) cbracticle votue > Jess than 257 Te =®Te + (8+) Teo Differentiating path sides ule-to Ig : ts pdte . (ptt) dt, d To dIq 1: pdt, dTa 8 HH Methods of fransRetor pi@sfng s— & Base wesktor Method. @ EmPter bear Method @ Brasfng ith Collector feedback seater, ® “Yoltage. diutdew bias. fey load daw — opecsling Porat s - — Trenemental onalinis usage iy bau'd wade. Ao oe an ye * Totegrated cfreatt and opurabinal Ae 1230 Zads biluy rplepren . Cun, Te —_— bos fe , pegital a wo C *4) q1 gtetable gavuk p outhut” LINO xk Tn tegrated cfpcettt — the dfecover of Ids , the baste wos Ste ing efrcutts Salas to Select she tornpene wie diodes gransfstors, vjes’stays , Fnductoys, and Capaciteys and Connect them shouldenfng.. But due +o ghe ze and poudey eénsumpeton. fesues, tf udas necessar jo develop «4 Small Sie cfhrouit with ied oulen Consumption » vjeli abitity. and shockproy > Aftey ne fnvention of the emeconductoys and 4ranstetoss , +4hings uleye quite &fmplified ~o.9 partrceubay extent >» but she development Entegnated cofroeutts hanged electronics technology.’s face, - gack hit from Texas instruments .and Be Noyce from fnteb ane -the offireFal «= cneators of Inte, ated cfreutt, and they. d?d ff endependently. Pefinitfon — —Tnteqn cineutts ane made up of Suva components chuch a8 frCohs diodes and +ransisi Fh are. built 6n a amalt afogle. blows o> chip wt a Semiconductose noun ag are Thtegroted efreut (IG). Ay of ther eaerek “egethe to perform a postieutase task . he Te fe easily peeakoble 30 46 be attache +o dncutt- Toned »& & offen housed Boa plastfe package utith metal pins.

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