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Unit 3 Notes

The document provides an overview of semiconductors, including their classification based on energy band gap, types of semiconductors (intrinsic and extrinsic), and the concept of Fermi level. It discusses the mobility and conductivity of semiconductors, the effects of temperature, and phenomena such as carrier generation and recombination. Additionally, it covers the formation of PN junctions and the working principles of devices like solar cells, photodiodes, and LEDs.
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0% found this document useful (0 votes)
2 views37 pages

Unit 3 Notes

The document provides an overview of semiconductors, including their classification based on energy band gap, types of semiconductors (intrinsic and extrinsic), and the concept of Fermi level. It discusses the mobility and conductivity of semiconductors, the effects of temperature, and phenomena such as carrier generation and recombination. Additionally, it covers the formation of PN junctions and the working principles of devices like solar cells, photodiodes, and LEDs.
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF or read online on Scribd
Semiconductor & Devices Contents 3.1 Classification of solids on the basis of energy band gap 3.2 Types of semiconductor 3.2.1 _ Intrinsic Semiconductor 3.2.2 Extrinsic Semiconductor 3.3 Concept of Fermi level 3.4 Position of fermi level in intrinsic semiconductor 3.5 Position of Fermi level in extrinsic semiconductor 3.5.1 Position of Fermi level in n-type semiconductor 3.5.2. Position of Fermilevel in n-type semiconductor 3.6 Mobility 3.7 Conductivity of semiconductors 3.8 Effect of temperature on conductivity of semiconductor 3.9 Carrier generation/ recombination phenomena 3.10 Formation of PN junction, Depletion region built-in potential 3.11 Working of solar cell, Photo diode and LEDs. Note: Handouts provided are supplementary materials. Students are advised to refer the prescribed text and reference books for comprehensive understani Unit - 3 S@micenduidor A olowies a) Classif i abion ee Ackéds on te basis of Enogy Barel gap Solicls cam be classified as Conoucters, Aemiconclucters On Frswlaters: The cLassifitation. of olifporst matrrials ALpends on thoir ability fe conotuct electricity - The barol Yeo, of Anliol erctelecin’d the olif{fermnce. borvetn tore of matertals+ The Barol Heery Aarsits oo roliols inte Hee cabegeriors- Feedng accel of echo uitin bands and widte of forbidden enngy Fart: Tnyulatonrs Corcuctors Semiconductors | Dredators : The alerted tr which the Conoluction band anc Valance bands are rcprstiol by qurtele. Energy gofo | (>3ev) as phomin fgunre belad + Bard | ay? Bev Bret of lecttong Vahence Band Energy Baro digrann of, an Fysulrte Corductirg , Tre mutotal in whiche Conduction ad Valance. lanols overlap are callecl Conctuctors. energy eas af ea L Enangy Garol egham of 2 Tybalt pa Energy Band diag of Semicerdicls . and lum (0-72) on ( Banca is 12 ew : . con peak Aenek Coro hors 32) 32) b- Ne A pure form of henitoncucks 1 cablid as intinsec. Remicondutd.' Conduction in mAbui. Aand conolurhey is either due tb tomal exdtetion or cryrtebclofedi. Stlicen( si) end Gewnentum CGed ae we +0 — mote i. Armicordudors used + ‘ ium oa Hoe’ stuns. of Slicer» Atorne nor of Silicon is 14 and 6 rat 4 valance. ectrons- Thase 4 eledroms Ae shareal by four roignbarinf Atems by means of Covalent bend: Ary Showed Hoe Cayptel SHucturs. of Silicon oh pur] arbainnic Mumconrductor graap ExPirric Aemconduclor Purr Alico cud Getmenionn has eayral rumdsers a meduats Conductor, of eleehiatty . To Improve TS conductiity , loping is Camied out Aeping. means inKeduting. Q fall a bof impurity cube’ ints +e tbinne Aenicousuoy CItbiver~ or Geuntuiun) » Whow Ypoutaradunt impurities. CP, Ws, Sb) are ardaleol , each impurity. com donabs an entra elecher , Cresding- a AokZe. number of free elochows » “Tui doped motel && called n-type , wwre Claehrous are majority Camera and’ helis as the wnrort COMLLAK + whore daivalat imburiHes (8, Ga, Tn) are added, ear inburity obo carats a deficiency of: one elechor (1 hole + Truk cLoked material C6 Callesk p= type , otache Roles are ranjority Camicrs ae Fo eats 3@): GSO ro 8 eee men B= type Aeralconduster 4 Po Phosphorus * @ 3 Gorow Si3 filicow SC a Miulcow 3. Concefat of Fami-Level + 5 Fevml - Eregy O atu dofinad as Hho mart, aa powered lay eat Ok. otha weds, erage ok dadghewt {Mod State at OR 1A Callod Rint a uw in Seomihy & At OK, a0 tro enrige Stuea Upto Ep are occupied With e~ and Gtater above Bp U2 empty « Rami - Disac Dimuleution |» Fra dintuleukion Gf efectiony among tho Crt Dovel cra fimah of Eemmpacraturd tA known OA Forwni= Pisac Piwtailubion qumetion Qt a given bay frey= -l—; os recePr yet 4b jnditalor Eno frchabrility that oq pasbioular Stole ak to enni9y (owe E 1A Occfetod on Os Fnothor woldd “lt dotormdmes Hw corrioy OCCUpamcy G4 erage Hake, - Dipporemt Cored cl) At T=OK ) "4 eae 6 2 oo FE) = = ae ~ 18 ciyAE T=OK y rt Es ata , <4 i eee FCES te?” #6 citi) AL THOK » T?OK J 4 L ie x a = eb =O = 0% PCEy = tego TH *% Prec€p PCE aL Te fami : : - oni energy Level is the with 5o%, robabidiny of becmg PrLled Bb any temp Powe gy eck nt) Pest tion o Fes Level tn Intrnaic Sevattondutho. by Gn intalnyle Semdcemductet , nO e| er= hora) hokey Me oa Ne er Ect Vet = Ny OOP OAR ne ee maeae ee tEe V > Bt BYR, = fy|Ne KT Oe, Ee +Ey —Infne) = 2E Foe n(NE) = Seb = = KT Ny es pp = edty SE M(HE) Cworrh) axe At Took wrayer) UN Inkerpsotaion 9 2 Pia. oppernimatabey aud valonta. bad Coe“ B Coe nis Ab T=300K8 ot ACom te a Elorkrons are towne Dey ! 7 icomcae | 7 ¥ At T=0k, Tho dintububio Wa stop fanciies Lotong all eragy cates bolo Be oe and Bree aboeveEoue Crmfokey ¥ AE T>OK, tho2 ida Chana tat Sono Clections Cam eccuey Cnney Levels above Ep od Soro Lovehs boobour Ep ont Vactamb of ® Probolat tity of occupancy Se BUA re OK fr E=be Fedma’- Lowel 14 Sov FAwe_codnlen Density os i g a5) Potion Of Feami - Lowel tn Eochiinic Somivoductoy | ~; acute semitonductor aro materials that hare Weeh doped wsitth ther to adler Wan clocttod— propouties - lees There aut Cue Lypea Of extiirtic Setd-Condudlrrs, wy Nn -by fee, Semconduche — 21) P- byfae Sernatcen duchy, as) Pesteton of Foam Lovell 1 N-bypoo semnbtemdudous I> On-N- semiconductea , jaoentavadont Umrpurt tog donate “extia Chocttomy [x tt conduction focind , watklig Clottions Wo mojotte coontors cmd note ta watoly Colley’, m = Np wn, eC EeEpVkt X& No Loge {Ne = EE ‘Im N- Som Conductor , ferme Loved yy om bem frora turd and doping Concontiaher, . At Lew bemboahno | CLecktons tn conduckin lard oun ony duo to the brant Of Co om denet love+ Thowiero Fetmi paved Mle behween amor tovol ayy Tha Lotions Cdge oj oem auch be \ As tho bompsabue [hcrceses, Eno donot Love qyrdu get dopleted amd the Kemt Lowel styipt Lown WO, y OF nat temperatura Faun’ 100 eotndd- =e wet doner Jord , gonpfovttim Of _Fesmi-Lavel jn Prtafee Semuiconduct ( Gn P- eamteonductols , bAivalont 1 times Choctaoms creating. rotor In velomee bomd » meceing Lokey BLO moyouley Comer and Choctwms tid Joao) cehulary pb NA , Ny = Ny @ Nu Saya Leg Na ® Meg samrcmduclot at Jow lmpaatirc edo) _ CEp-Ev Ver an Pe Dorer Jie bakween erceafptr owe ami the up edge Valence bom Ay de te mypooreture (nereares , Ho Fans’ Loved shut word , cut thet [2 impor Fermi Lowel colrolaas usd, accofptor Lorre «. Us wut UA m>/V-SeC + camjors docwanes usith te rfoorcleter * Mebt dl Cf change inate oct Bp Mo te Uy incroanthg , Ho atom, 1% | Mae NE oo po yibiating and dua to is trauma Vert, Choe ey Chouge Carnars docrorwe + Quas A malt conantiation Of minott Cy conrios US tweeted ute ao Jnomogonooud Som Conductor at ow point amd am Chectiic 4ietd ere Is ofpptied acrow Wo caytal so trot mineuly wor tw war ourall wid aq men at dintancs “af Ice In 2ousec 1 Calculate moro ky (nr Cm2/v Re Sh, Given E=loV/em ‘ acai , 320 Wee ieee = ivkam C2 \ . F a a Gun pif votouty a ae ~~ — tims 20K Ope = OS Ke = Go, 060 cm */S0c JA z $0,0°° 1o [w= Soco cm/goq | f : a n 7D Conductivity im ot la tho culetDt ey of a mater tal to allow He flow of olectuic ewan Git is donated lay 6 » 9t 14 ophou! Aordativity CP) watch moaruey wou much o malenad (mts woth cLmromt fow - Comducttutey Of Samicondirchers "7 Fn somiconductea » He cwremt 1 dua te both Choage Comers , (eC Chactions ame hokey . lee n= noo} efactiom Th Conduction lam d p= no «of olor i velomco loan He Ag = efoction motothi ey J holo motel Lang So comduchivity ‘s ecxun4ee + pupe SF = & Cnet h4p) * Conduct vita Awe Semi'conduckyt | Gn intiinse Semitonduct » no ; =m Conductivity of N-tyfe semiconductor > Oa N-type hele Comeback, td noghr addy mals In Compo aston to 07 Cor comlaahen be feeeyae) Cah Np fs concomtiatiom of donct atom , % Cond Ce vty of Re bepfe Semi’ ComdurGho {J da Pte e& Comcombaation 1 nogha at bey smal |r Combourmen tO snolo contamattn . Sor Pe Na S = eNap Na ty Concomtracthion of accofelor ory 30) Egoct ©} temborabrs on Contuctiocdy (4 | The Conductivity Gf Semicon ductors facrcarer totht, moware In temporatrd % Ax tOmperakune Mowers, eLockiows TN enough Hormel Crno. to 4 fon valewca ond to Conduction Walndy moroores noe] {2 Cloctions abe Aches « 3% AX fempoiature Incrcares becaure o Hrormal ehaigty a ere, covalont bord WwiQl loo broleam Ove oko majeuly aud wimeiby CeOslers ano created Amal Hert}eto conduc — mead usi2d wh Trernanes with (impasiahurs . Fov pure pooriiconcl LOY Condringie Carrier Cones whre bien ta - kt ; Geen a nN = [mw i — &y [our ae = Ne (HetAy) = el Met) [very & t Gy = ty feet) I | - 4 bere 7 Ere BieT = Kk soe | Ly Ke A r = yr wD Conricn Geusnation / Recombination Phonromens. Tr a pewtcouolucter , the flaw of elechfe cumenk torn plow Charge. carers, UU wre of +00 tyke - electron ad pola. The proces HArrgh luc Curtenk Canterds ore aati and distoyed trade a Aomiconolucter are llc Camrer Jonorsbion aud De condrination foronomens: Tn He Coren Geueration foro, an eladtren_ in the Valence boro prececier rubh cent external energy and jum te the Consluction banch 4 Pewsing bolind a hele in Valones loool - “The enorgy Assured Hor Cxtibabion cous be Applies in diferent feu — Thormal nr84 , Ligue wurgy o% elactrr fetal enorgg - Pathol b “Glial emsrationm protons of energy quate Haw band ap (ny>>2y) Marfan Hae Atmiconductet * Ea Aesvtbeol . Aneto excite an electron, for We Valance. 0 dnd Te We Covcluirtion band , reoting & Coucspording ole - This principal is uses! in eptoeleeKiouic. clomiioy Sue ar ppetrdicds , selarcells, anol Pots Haw stor$ + " Avalonche encration :- Aitel type of ' OCCU Uncle. Hre influrnee ef a Atong. electic. fold, Rnown a4- Impact 04 avetanche fon, ushonre Checkons Colbicle Lit the Lnftiia atoms anol Libralé Mor eleckons , Laacking H an avalanchs. of Corners + This phenomenon (5 obsrvect ir Aredanche clioclts enol Zener bMeaRoluwn Couwlitions- Types. of rics Counstion Tyhe Erorfy source. Example. Devieas Thormol Geunation Hoat (Sobtie vibsatitn) pian. Aen Chhicak Geunation Litt (bretont) — Petdiodes, oercl Fupact /Avalanche. ec pu . / ere ee eerie at Zanerdiods Fn wd pacers , a free elechorw band Loser WA energy andl falls ‘one - Vilanea banol » Huarcky annihitaling, belt Crs The fost erarty is Aafeasest eftwr fant: Cn tae form of Datiie) 0% as Link Cin due foun of protons) ° The Aetomsinstion- prowess Cam occur In Longs, olepensting ore de penatcovolurtsr makrcol aud tis puatty The imjdost one 5 olinect Praclialtoe Pracombinoiion , invite He tlechon olincctly Accombinty witiatele cud emt a photo Thaé process denunook Indlerset! bard gab Aenitendhilers Burr o& GaAs) Qablivn . Arsenite And ge leprkig prinupee of (LEDS Ard Loser cLiseles - fs fra Conduction nds a hole Pte is Be IS ze FFndinacl’ hordgep Smiconstichers Like silicon duel Geamaniury , nen ractiattve. rerombinakion encinal - Frits mechanteme , impurter ox clefels tr He : Creole interamooliate energy, Levels, (calliol +s ‘) tnvile ee An. elechorr from tue. Cotuction barol| Can frst fale cnts tus Arh fovel ancl thom Recombine Lit « hele from the Valance. banol- , ProheosirG Ma enorgy as heat instead of Ligh - Silicon | Conduction Canricr. Recombination (tm short) Recombination 12 te on woe fee elechon in He Eidion me banal falls trtsa hole in we Valance banol, eliminabing both Carniens - TWub release. enorgy , usrably ir Hae. oun bx Heat Cphonen) ra hagas C Protons) Elector + Hole —? EnrgS Chast 0 Lit) Types of Qe wnoinabion at Bumd.-40- Bard) Elecro LEDs, Pesteivs t ee pacombine. with Laserdiode pote. emit photons plon-Radiatove (Trade -asnisted) serene pa Or aspect Levels (silliven Ge) Transihors & Golar celle 3y(0) Lermabion of bow dunctiow 4 Quilt in poleubiae pow junciew diode A a@ baric Aeniconductir olu'ce- A pov junction is found from 4 piece of Aemiconduct (Ge or Si) by doping po type matcal CAccebte impurity atoms’) 26 one tall Aicle ant N- type material (Denon. impuntiy atoms) Mur folk Rides The Jugions Ake calle “p- Region and m- Angion perpechively « Tanchlow ' Ye free Oeeoe | “rm SP PSO 590° & gare ' Att are 'eo Seow i Downs Ration We kite Borier = pote When pen junckow is |, ue te Concauttachior oliffoumce , electron in He. Y- Reflow diffuse inte the p-negion anol hols from spon % ater lorile cretsing the junction, He eheetrons aol polls Aecembines Lott each oHur ) ceng tmmebale (ons in the maighbothord of He Junction of Ahan in fig These immobile +e asl -ve dons, Set uf pokubial acrots te junction » Tis petmutial bv 6% Called potential barrier 9 built in lal - it Potential harrier. o& built-in folewkal is clofinad os -polentiod olifperonce fuilt Up acres We pv qunckon ututh nest furter memement of Chabgs. conuens, crrets He function - the potential farier fer o Bilton p-n funkion B& abet oF volt anol ter Geunauim pon funch'on & abut 013 vokt- f Pablorking of Solo Coll. KN solar cell Cor photo voltaic cll) nie device That convents olan energy or sw ‘ chive ott, dob elidthical emargy ving, the Prctovo l baie effect. Bate _prinable > The shondlion’ of telar cell! I 4 Aa bese om the -protovel tele efeet.~ than the platens ghuke the AUATACE LO demi cemduchy (Mke Aliam) electson- hate pais Gna qrerdid . The bult-'n — electrnic dield at the pon ‘junction, Separato there Charges, Ve. ehactren Proves tauceds she w- Aldo. and -holas mave Sousarde the b-Aide, Tus wovement ef chargts Crean a potenti af diferrme Product electric Grment ute te, Gruut jo closed, Constuclin i> A selan coll Ls rracke b., of GO Armi wnduter mduial uawalba, Ailicen Csi), Conristing °t , B-type Loser = pestle Charge Cariend n Jason. — negalive oe CONNICNA | peat Whe boundary shore bot Layers rt Mekeh umtact — Ulow cunent +0 Plow cut o| the cell] Fontive}e ecting, Coating. = en Jaga aed vepreted Working 4) Lid bsorption - Sunlight (preston) dalla on the Solan cell os ats. absorbed toy the somi umduclor ron dtinial | The energy dom 2) Clacton —hole pane ganeradton — Abicon , peal platens excites elwtrens sn Ine thm Loose Rom Aner atoms, es Area -elactsens and nplen. : 3) Seberdlion 2 Chersgon ® Janchon The Antennal electnic Held ot the p- pushes electrons tewands the nthe side 4 holes Pounds Ate Poe be dices 4) Grvenk flmo — When an extemal cipeulk so Gmvnect-eol +etweon the two Aid , cladtrens flow Aha deci to combine sith trolls reducing ebedyic current S\ Power Oulbur— the jew 4 clothes Armgl Knee erctenngl circle Prvidts pe cheney. 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A +hato diede cb a PN junction dure “teat Qpnewdis current ulin €Rbesed © ts Jabk Th pier “10 Form ed teralbring, f 2 Aye Sewn cen duthey material. Ina matetial. whan combines form a Aapletion im. 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Anesease tne : Gancut e. Halla ees pone Whe wrve Aboun that he wadiant, pewen. OLED is pe Prbortianal to prea Wrvent Forward cument ay LED Cua) Abplicalum 6:9 + Trdicator Jambs, disblay parclo + Remote centrale CIR Leds) ° Tratic signal 2 gignboarde opts, Or nun cat i: 28 ae A Solid cnt chassificct banedl om Hin energy Aank a - com Lucid | Semicon chickoys 2_ Anbuleters~ R Mafinials where amcucivily Lin bebvetn (mducloxr 2 rslaton, - Prisiinste demi conductor + Pore ‘form (24 Si,4s), Ecfonwe Remiem Onell; _ bt clifed unity pertavalant mere O ; pale cleped ule Ayvalntomme teley Ponmi Emerge Cle) un the é Aavel Senpied by elichens at absolut 2% (ok), b+ Foymi energy Dewrel whore De of firoling an elactwn ub 0%, * ties ak tre midalle efor toring, Athan, o Meves tare! tem ductign ond eee Velonee banck for Py po 5 Loy ve i Probabslit 2g metals :> conclucliat, dearaaee with Vige in Semeombbuclors > Cnductiite Aereses wiih 6. Motlle ~The care woth Beh. soeate, A betes mere Th weigh A semteenchiccter, Under A eliheia Hell [ae £ Te Fada Biree hit tnpecy,, finches, FE)= 1 Ie e6&-€e) Jar - -Ey)/ Ny = Ny @ Cee ’ Ver ) Np > Ante Net Ny are efpockive bnuti of hte Ay the conduction € Valtrce band 30 . oo Generaber > fermabim Of eleebicon - ~ hat, ee Le Ed tas Laight ) arnt natia, *5 lo. Work! wv 7 Mey, TF Auices Slaw cell 3 cavers one 2 wb . Oy sit Ataticd od Melricag be et anced Lahr “on 0 Rovere Gua. Cnet, LE0:3 Emil Than pr. ie Cather ee ee nN x Summarize table Vattous Boweies 5 rosa Materia Sty Be, Hal ees a at a Short Questions 8] ee Classified: en ~the loaris of enerey band ab? nd 8h Amalf Band HP me * Semicamductou chaye a moderghe band aah (lev), and » Insulators thave a dary 2. Whak ane the FyPes of Aemivenducons ? dns: Seri comhuctarrs ana af two Tntringie Calutate the ffi veniy of the cotan cl, O83 FF an LEO iv operaLid at 27220 FAA the olaetycal power inbuf. Ql4s a Plasto olizola han a et poner and 6 ullu minated gee 50 nw, CAleuwlaty the wah, way Of O°% Al 7 Peue photo wnent generated,

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