MOSFETS

A MOSFET, or Metal-Oxide-Semiconductor Field-Effect Transistor, is called a Field-Effect

Transistor (FET) because the flow of current between its source and drain terminals is
controlled by an electric field generated by the voltage applied to the gate terminal. This
electric field influences the conductivity of the semiconductor channel (the path between the
source and drain) without requiring any direct current to flow into the gate itself.

Parameter BJT MOSFET

BJT stands for Bipolar Junction MOSFET stands for Metal Oxide
Full form
Transistor. Semiconductor Field Effect Transistor.

BJT is a three-terminal semiconductor MOSFET is a four-terminal

Definition device used for switching and semiconductor device which is used for
amplification of signals. switching applications.

Based on the construction and operation,

the MOSFETs are classified into four
Based on the construction, BJTs are
types: P-channel enhancement MOSFET,
Types classified into two types: NPN and
N-channel enhancement MOSFET, P-
PNP.
channel depletion MOSFET and N-
channel depletion MOSFET.

BJT has three terminals viz. emitter, MOSFET has four terminals, i.e., source,
Terminals
base and collector. drain, gate and body (or substrate).

In MOSFET, either electrons or holes act

Charge In BJT, both electrons and holes act as
as charge carriers depending on the type
carriers charge carriers.
of channel between source and drain.

Polarity BJT is a bipolar device. MOSFET is a unipolar device.

Controlling
BJT is a current controlled device. MOSFET is a voltage-controlled device.
quantity

Input MOSFET has relatively high input

BJT has low input impedance.
impedance impedance.

Temperature BJT has negative temperature MOSFET has positive temperature

coefficient coefficient. coefficient.
 Parameter BJT MOSFET

Switching For MOSFET, the switching frequency is

The switching frequency BJT is low.
frequency relatively high.

Power BJT consumes more power than The power consumed by a MOSFET is
consumption MOSFET. less than BJT

BJT is preferred for the low current

MOSFET is suitable for high power
applications. It is widely used
Applications applications. It is used in power
as amplifiers, oscillators,
supplies, etc.
and electronic switches.

In a depletion-mode MOSFET, a conductive channel exists between the source and drain
even when no voltage is applied to the gate, meaning the MOSFET is naturally on (conducting).
To turn the MOSFET off, a voltage of the opposite polarity must be applied to the gate to
"deplete" the channel of charge carriers, reducing or stopping current flow. Depletion-mode
MOSFETs are less commonly used but can be found in certain analog applications.

On the other hand, an enhancement-mode MOSFET operates in the opposite way: there is no
conductive channel between the source and drain unless a voltage is applied to the gate,
meaning it is naturally off (non-conducting). To turn the MOSFET on, a voltage must be
applied to the gate to "enhance" the channel and allow current to flow.

Enhancement-mode MOSFETs are the most commonly used type, especially in digital circuits
and switching applications, due to their normally-off behavior, which makes them more power-
efficient and safer to use in logic circuits.

➢ N-type Depletion-mode MOSFET Working Principle:

1. No Gate Voltage (V_GS = 0V):

o In the absence of a gate voltage, the channel between the source and drain is already
formed because the MOSFET is designed to have a built-in channel of N-type material.
o As a result, current can flow freely from the drain to source when a voltage is applied
between the drain and source (V_DS). In this state, the MOSFET is normally on.
2. Negative Gate Voltage (V_GS < 0V):
o When a negative voltage is applied to the gate relative to the source, it creates an electric
field that repels electrons from the channel, reducing the number of charge carriers
(electrons) in the channel.
o This process "depletes" the channel of electrons, which reduces the conductivity of the
channel. As the negative gate voltage increases, fewer electrons remain in the channel,
and the current between the source and drain decreases.
o If the negative voltage is strong enough, the channel can be completely depleted of
electrons, effectively turning the MOSFET off.
3. Positive Gate Voltage (V_GS > 0V):
 o When a positive voltage is applied to the gate, it attracts more electrons into the channel,
enhancing the conductivity and allowing more current to flow between the source and
drain.
o In this case, the MOSFET remains in the on state but with an increased current due to the
enhanced electron density in the channel.

Transfer Characteristics Of N-Channel Depletion Type MOSFET

The transfer characteristics of N-Channel Depletion Type MOSFET is drawn between ID (drain
current) and VGS (gate to source voltage).
In the transfer characteristics indicated that current will flow also when VGS is zero, that’s
mean that depletion type MOSFET will conduct even when gate terminal is left unbiased.

Drain Characteristics Of N-Channel Depletion Type MOSFET

The drain curve shows the relation between the drain current and drain to source voltage (VDS)
at constant gate to source voltage (VGS).
In the curve when VGS is zero and negative, the MOSFET operates in the depletion mode.
If the VGS is zero and positive the MOSFET operates in the enhancement mode.
N-TYPE ENHANCEMENT MOSFET
Working Principle:

1. No Gate Voltage (V_GS = 0V):

o When no voltage is applied between the gate and source terminals (V_GS = 0V),
there is no conductive channel between the source and drain.
o The P-type substrate does not allow electrons to flow between the source and drain,
so no current flows through the MOSFET. The MOSFET is off by default.
2. Positive Gate Voltage (V_GS > 0V):
o When a positive voltage is applied to the gate, an electric field is generated across
the insulating layer (oxide). This field attracts electrons from the P-type substrate
toward the area directly under the gate.
o As more electrons are attracted, a thin layer of (electrons) starts to form just below
the gate oxide, creating a conductive channel between the N-type source and N-
type drain regions.
o Once the gate-to-source voltage exceeds a certain threshold voltage (V_th), a
sufficient number of electrons have accumulated to form a complete channel,
allowing current to flow between the drain and source. At this point, the MOSFET is
considered to be on.
3. Current Flow (V_GS > V_th):
o When a positive voltage is applied between the drain and source terminals (V_DS),
and the gate voltage is above the threshold value, electrons flow from the source to
the drain through the induced N-type channel.
o The amount of current flowing from drain to source (I_D) depends on the gate
voltage (V_GS). As the gate voltage increases beyond the threshold, the channel
becomes more conductive, allowing more current to flow.
o The MOSFET is said to be in its saturation region (also called the active region) when
V_GS is sufficiently large, and the current becomes independent of V_DS.

Operating Regions of the N-type Enhancement MOSFET:

• Cutoff Region: When V_GS < V_th, there is no channel formed, and the
MOSFET is off (no current flows between drain and source).
• Linear (Triode) Region: When V_GS > V_th and V_DS is small, the
MOSFET behaves like a resistor, and the current flow depends on V_DS.
• Saturation (Active) Region: When V_GS > V_th and V_DS is large, the
MOSFET is fully on, and the current flow is relatively independent of
V_DS, controlled mostly by V_GS.

Transfer Characteristics Of N-channel Enhancement Type

MOSFET
Drain current will be zero for the VGS is greater or equal to VTH for
the N-Channel Enhancement Type MOSFET.
The transfer characteristics of N-Channel Enhancement type MOSFET
is drawn between VGS (gate to source voltage) and ID (drain current).
The transfer characteristics will always be in positive region and zero
till (VGS = VTH).
The relation between ID (drain current) and VGS (gate to source
voltage) is [ID = k(VGS - VTH)^2]. This expression is non-linear and
is valid only for when (VGS > VTH), that’s why the transfer
characteristics will also be non-linear.

Drain (Output) Characteristics Of N-Channel Enhancement Type

MOSFET
The Output characteristics of N-Channel Enhancement Type MOSFET is drawn between ID
(drain current) and VDS (drain to source voltage), for various value of VGS (gate to source
voltage).
When drain to source voltage will be Equal to the voltage difference between the gate to source
voltage and THRESHOLD voltage ( VDS = VGS – VTH). This voltage is called pinch off
voltage and thus current increases slowly with increase the voltage.
When drain to source voltage will be greater than the voltage difference between the gate to
source voltage and THRESHOLD voltage [ VDS > (VGS – VTH) ], then the drain current
become constant and saturation occurred (ID = Constant).