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The 2SB1644J is a PNP power transistor with a maximum collector-emitter voltage of -80V and a collector current of -4A, suitable for power driver applications. It features low VCE(sat) and is lead-free/RoHS compliant. The datasheet includes detailed electrical characteristics, absolute maximum ratings, and packaging specifications.

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0% found this document useful (0 votes)
5 views7 pages

Ds

The 2SB1644J is a PNP power transistor with a maximum collector-emitter voltage of -80V and a collector current of -4A, suitable for power driver applications. It features low VCE(sat) and is lead-free/RoHS compliant. The datasheet includes detailed electrical characteristics, absolute maximum ratings, and packaging specifications.

Uploaded by

Steven Andrade
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

2SB1644J

PNP -4A -80V Power Transistor Datasheet

Outline
Parameter Value LPT(S) (D2-PAK)
Collector
VCEO 80V
IC 4A
Base
Emitter

Features 2SB1644J
(SC-83)
1) Suitable for Power Driver
2) Low VCE(sat)
VCE(sat)= 1.5V(Max.) (IC/IB= 3A/ 300mA)
3) Lead Free/RoHS Compliant.

Inner circuit
Collector
Applications
Base Automotive power driver , LED driver
Power supply

Emitter

Packaging specifications
Basic
Taping Reel size Tape width
Part No. Package ordering Marking
code (mm) (mm)
unit (pcs)
2SB1644J Taping TL 330 24 1,000 B1644

Absolute maximum ratings (Ta = 25°C)


Parameter Symbol Values Unit
Collector-base voltage VCBO 80 V
Collector-emitter voltage VCEO 80 V
Emitter-base voltage VEBO 5 V
DC IC 4 A
Collector current *1
Pulsed ICP 6 A
*2
Power dissipation PD 30 W
Junction temperature Tj 150 °C
Range of storage temperature Tstg 55 to 150 °C
*1 Pw=100ms, single pulse
*2 Tc=25°C

[Link]
© 2013 ROHM Co., Ltd. All rights reserved. 1/6 2013.03 - Rev.A
2SB1644J Data Sheet

Electrical characteristics (Ta = 25°C)


Parameter Symbol Conditions Min. Typ. Max. Unit
Collector-emitter
BVCEO IC = 1mA 80 - - V
breakdown voltage
Collector-base
BVCBO IC = 50A 80 - - V
breakdown voltage
Emitter-base
BVEBO IE = 50A 5 - - V
breakdown voltage

Collector cut-off current ICBO VCB = 80V - - 10 

Emitter cut-off current IEBO VEB = 4V - - 10 

Collector-emitter
VCE(sat) IC = 3A, IB = 300mA - - 1.5 V
saturation voltage
Base-emitter
VBE(sat) IC = 3A, IB = 300mA - - 1.5 V
saturation voltage
*3
DC current gain hFE VCE = 5V, IC = 1A 100 - 320 -

VCE = 5V, IE = 500mA


Transition frequency fT - 12 - MHz
f=5MHZ
VCB = 10V, IE = 0A,
Output capacitance Cob - 100 - pF
f = 1MHz

Turn-on time ton *4 - 160 - ns


IC= 2A
IB1= 200mA
Storage time tstg *4 - 1000 - ns
IB2=200mA
*4 VCC⋍ 40V
Fall time tf - 600 - ns

*3 hFE rank
*4 See switching time test circuit

hFE rank categories


Rank E F
hFE 100 to 200 160 to 320

RL=20Ω BASE CURENT


VIN WAVEFORM IB2
IB1

Pw IC
IB1
_ -40V
VCC ~

IB2 ton tstg tf


Pw _
~ 50μs
_ 1%
DUTY CYCLE < 90%
IC
COLLECTOR CURRENT
WAVEFORM

10%

[Link]
© 2013 ROHM Co., Ltd. All rights reserved. 2/6 2013.03 - Rev.A
2SB1644J Data Sheet

Electrical characteristic curves(Ta = 25°C)

Fig.1 Ground Emitter Propagation Characteristics Fig.2 Typical Output Characteristics

-10000 -3
50mA
VCE= 5V

COLLECTOR CURRENT : IC [A]


35mA
COLLECTOR CURRENT : IC [mA]

45mA
-2.5 40mA 30mA
-1000 25mA
-2
20mA

-100 -1.5 15mA


Ta=125ºC
75ºC 10mA
25ºC -1
-10 40ºC
IB= 5mA
-0.5

Ta=25ºC
-1 -0
-0 -0.5 -1 -1.5 -0 -1 -2 -3 -4 -5 -6

BASE TO EMITTER VOLTAGE : VBE [V] COLECTOR TO EMITTE VOLTAGE : VCE [V]

Fig.3 DC Current Gain vs. Collector Current (I) Fig.4 DC Current Gain vs. Collector Current (II)

1000 1000
VCE= 5V Ta=25ºC
Pulsed
DC CURRENT GAIN : hFE

DC CURRENT GAIN : hFE

100 Ta=125ºC 100


75ºC VCE= 10V
25ºC 5V
40ºC

10 10
-1 -10 -100 -1000 -10000 -1 -10 -100 -1000 -10000

COLLECTOR CURRENT : IC [mA] COLLECTOR CURRENT : IC [mA]

[Link]
© 2013 ROHM Co., Ltd. All rights reserved. 3/6 2013.03 - Rev.A
2SB1644J Data Sheet

Electrical characteristic curves(Ta = 25°C)

Fig.5 Collector-Emitter Saturation Voltage Fig.6 Collector-Emitter Saturation Voltage


vs. Collector Current (I) vs. Collector Current (II)
-1 -1
IC / IB = 10 Ta=25ºC
SATURATION VOLTAGE : VCE(sat) [V]

SATURATION VOLTAGE : VCE(sat) [V]


IC / IB =50/1
20/1
COLLECTOR-EMITTER

COLLECTOR-EMITTER
10/1
-0.1 -0.1
Ta=125ºC
75ºC
25ºC
40ºC

-0.01 -0.01
-1 -10 -100 -1000 -10000 -1 -10 -100 -1000 -10000

COLLECTOR CURRENT : IC [mA] COLLECTOR CURRENT : IC [mA]

Fig.7 Base-Emitter Saturation Voltage Fig.8 Gain Bandwidth Product


vs. Collector Current vs. Emitter Current
-10 100
TRANSITION FREQUENCY : fT [MHz]
SATURATION VOLTAGE : VBE(sat) [V]

Ta= 40ºC
25ºC
75ºC
-1 125ºC 10
BASE-EMITTER

Ta=25ºC
IC / IB = 10 VCE= 5V
Pulsed f=5MHz
-0.1 1
-1 -10 -100 -1000 -10000 1 10 100 1000

COLLECTOR CURRENT : IC [mA] EMITTER CURRENT :IE [mA]

[Link]
© 2013 ROHM Co., Ltd. All rights reserved. 4/6 2013.03 - Rev.A
2SB1644J Data Sheet

Electrical characteristic curves(Ta = 25°C)

Fig.9 Emitter input capacitance vs.


Emitter-Base Voltage
Collector output capacitance vs. Fig.10 Safe Operating Area
Collector-Base Voltage
COLLECTOR OUTPUT CAPACITANCE : Cob [pF]

1000 -10
1ms

COLLECTOR CURRENT : IC [A]


EMITTER INPUT CAPACITANCE : Cib [pF]

Cib 10ms
-1
100ms

100
DC

Cob -0.1

Ta=25ºC
f=1MHz Tc=25ºC
IC=0A Single non repetitive pulse
10 -0.01
-0.1 -1 -10 -100 -1 -10 -100

COLLECTOR - BASE VOLTAGE : VCB [V]


EMITTER - BASE VOLTAGE : VEB [V] COLLECTOR TO EMITTER VOLTAGE : VCE [V]

[Link]
© 2013 ROHM Co., Ltd. All rights reserved. 5/6 2013.03 - Rev.A
2SB1644J Data Sheet

Dimensions (Unit : mm) D A2


A B
c1

L2
LPTS L3

E
A1

H
b2

Lp
L4
b3

L1
e b c
x B A
A3

l3
l2 l1

b5
b6

Pattern of terminal position areas


[Not a recommended pattern of soldering pads]

DIM MILIMETERS INCHES


MIN MAX MIN MAX
A1 0.00 0.30 0.000 0.012
A2 4.30 4.70 0.169 0.185
A3 0.25 0.010
b 0.68 0.98 0.027 0.039
b2 8.90 0.350
b3 1.14 1.44 0.045 0.057
c 0.30 0.60 0.012 0.024
c1 1.10 1.50 0.043 0.059
D 9.80 10.40 0.386 0.409
E 8.80 9.20 0.346 0.362
e 2.54 0.100
HE 12.80 13.40 0.504 0.528
L 2.70 3.30 0.106 0.130
L1 0.90 1.50 0.035 0.059
L2 1.10 0.043
L3 7.25 0.285
L4 1.00 0.039
Lp 0.90 1.50 0.035 0.059
x - 0.25 - 0.010

DIM MILIMETERS INCHES


MIN MAX MIN MAX
b5 - 1.23 - 0.049
b6 - 10.40 - 0.409
l1 - 2.10 - 0.083
l2 - 7.55 - 0.297
l3 - 13.40 - 0.528
Dimension in mm / inches

[Link]
© 2013 ROHM Co., Ltd. All rights reserved. 6/6 2013.03 - Rev.A
Notice

Notes
1) The information contained herein is subject to change without notice.

2) Before you use our Products, please contact our sales representative and verify the latest specifica-
tions :

3) Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.

4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.

5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.

6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communi-
cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.

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8) For use of our Products in applications requiring a high degree of reliability (as exemplified
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cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.

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equipment, nuclear power control systems, and submarine repeaters.

10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
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shall have no responsibility for any damages arising from any inaccuracy or misprint of such
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12) Please use the Products in accordance with any applicable environmental laws and regulations,
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© 2013 ROHM Co., Ltd. All rights reserved.
R1102A

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