NAVYUG VIDYABHAVAN TRUST
C. K. PITHAWALA COLLEGE OF ENGG & TECHNOLOGY
Near Malvan Temple, Via-Magdalla Port, Behind Gaviyar Village, Dumas Road, SURAT-
395 007. Phone No.:(Office) 63550 55839, 63550 62275, Email:
ckpcet@[Link], Website: [Link]
B.E. I year Semester: I/II
Subject Name: Basic Electronics Engineering
Subject Code BE01R00111
Question Bank
Chapter 1 Semiconductor Diodes
1. Sketch a P-N junction showing the depletion region. Briefly explain how the
depletion region is created.
2. Explain first, second and third approximation in detail.
3. Discuss how temperature change affects diode forward voltage drop. Also define
the power-derating factor for a diode.
4. Sketch the complete equivalent circuits for forward-biased and reverse-biased
diodes. Sketch the ac equivalent circuit for a forward-biased diode. Briefly explain
each circuit.
5. Explain DC load line and Q-point of a diode.
6. Define and explain dynamic resistance of a diode.
7. Explain the VI characteristics of a PN junction diode
8. Draw and explain diode testing using a digital multimeter.
Chapter 2 Diode Applications
1. Draw and Explain bridge rectifier. Explain advantages and disadvantages of
bridge rectifier over full wave rectifier.
2. Derive the expression for ripple factor of a half-wave rectifier.
3. Explain RC and LC filter circuits with diagrams.
4. Derive efficiency of a full-wave rectifier.
5. What is PIV (Peak Inverse Voltage)? Why is it important?
6. Differentiate between clippers and clampers with examples.
7. Explain shunt and series clipping circuits with diagrams.
8. Design a clamping circuit to shift input signal of 5 V peak sine wave by +2 V.
9. Explain positive and negative Clipping circuits in detail.
10. Explain the difference between clipping and clamping circuit. A positive voltage
clamping circuit and a positive voltage clipping circuit each have ±12 V square
wave input. Sketch the output waveform for each circuit.
NAVYUG VIDYABHAVAN TRUST
C. K. PITHAWALA COLLEGE OF ENGG & TECHNOLOGY
Near Malvan Temple, Via-Magdalla Port, Behind Gaviyar Village, Dumas Road, SURAT-
395 007. Phone No.:(Office) 63550 55839, 63550 62275, Email:
ckpcet@[Link], Website: [Link]
11. Explain voltage multiplier circuit in detail.
12. Explain application of Zener diode as a voltage regulator.
Chapter 3 Bipolar Junction Transistors
1. Draw the construction and symbol of NPN and PNP transistor and explain
Working of NPN transistor in detail.
2. Define current gains α and β. Derive relation between them.
3. Explain the input and output characteristics of CE configuration. Explain active,
saturation and cutoff regions.
4. Differentiate between CB, CE, and CC configurations.
5. Draw and explain output characteristics of CB configuration.
6. Explain transistor as a switch in digital logic circuits.
7. A transistor has β = 100. If base current is 20 µA, find collector current and
emitter current.
8. Explain transistor as an amplifier.
Chapter 4 BJT biasing
1. Explain DC load line and Bias point of a transistor.
2. What is the need for biasing in a BJT?
3. Draw and explain the fixed-biased circuit by considering an n–p–n transistor in
the CE mode.
4. Draw and explain the collector-base biased circuit by considering an n–p–n
transistor in the CE mode.
5. Draw and explain the voltage divider biased circuit by considering an n–p– n
transistor in the CE mode.
6. Design a CE collector-base biased circuit to meet these specifications: VCC= 15
V, hFE = 120, IC=10 mA, and VCE =7.5 V. What is the current gain of a
transistor with a dc alpha of 0.994?
7. Design a Base bias circuit to have VCE = 5 V and Ic = 5 mA. The supply voltage
is 15 V, and the hfe of the transistor = 100.
8. Design the voltage divider bias circuit to have VCE = VE =5 V and Ic = 5 mA
when the supply voltage is 15 V. Assume the transistor hfe is 100.
NAVYUG VIDYABHAVAN TRUST
C. K. PITHAWALA COLLEGE OF ENGG & TECHNOLOGY
Near Malvan Temple, Via-Magdalla Port, Behind Gaviyar Village, Dumas Road, SURAT-
395 007. Phone No.:(Office) 63550 55839, 63550 62275, Email:
ckpcet@[Link], Website: [Link]
Chapter 5 AC analysis of BJT circuits
1. Explain the AC load line of the transistor.
2. Draw and explain T-equivalent circuit (OR r-parameter equivalent circuit) in
detail.
3. Draw h-parameter circuit and explain all h parameters in detail.
4. Draw and explain AC equivalent circuit and h-parameter circuit for common-base
amplifier. Also derive equation for input impedance, output impedance, voltage
gain and current gain.
5. What is the use of coupling and bypass capacitor?
6. Draw and explain AC equivalent circuit and h-parameter circuit for common-
emitter amplifier. Also derive equation for input impedance, output impedance,
voltage gain and current gain.
7. Draw and explain AC equivalent circuit and h-parameter circuit for common-
collector amplifier. Also derive equation for input impedance, output impedance,
voltage gain and current gain.
8. Compare CE, CB, and CC amplifiers with respect to input impedance, output
impedance, and gain.
Chapter 6 Field Effect Transistors
1. Explain the working of a JFET with neat diagram.
2. Explain the working principle of JFET using pinch-off concept.
3. Differentiate between depletion type and enhancement type MOSFET.
4. Draw transfer characteristics of JFET and derive Shockley’s equation.
5. What is the advantage of FET over BJT?
6. Explain operation of MOSFET in ohmic and saturation regions.
7. Draw and explain transfer characteristics of a JFET.
8. Differentiate between JFET and MOSFET.
9. What is MOSFET device? Draw and Explain construction diagram of N channel
Depletion MOSFET.
10. Write a short note: E-Type MOSFET.
11. Write a short note: V-Type MOSFET.
NAVYUG VIDYABHAVAN TRUST
C. K. PITHAWALA COLLEGE OF ENGG & TECHNOLOGY
Near Malvan Temple, Via-Magdalla Port, Behind Gaviyar Village, Dumas Road, SURAT-
395 007. Phone No.:(Office) 63550 55839, 63550 62275, Email:
ckpcet@[Link], Website: [Link]
Chapter 7 FET biasing
1. Explain gate bias circuit with suitable diagram.
2. Derive drain current expression for self-bias circuit.
3. Compare gate bias and voltage divider bias for JFET.
4. Draw and explain the Voltage divider bias circuit of FET.
5. Draw and explain the Gate bias circuit of FET.
Chapter 8 Special Purpose Diodes
1. Explain construction and working of LED.
2. Explain capacitance-voltage characteristics of varactor diode.
3. Explain the contraction of the solar cell with its operational principle.
4. Write short notes on tunnel diode and its negative resistance region.
5. What is zener breakdown? What is avalanche breakdown? Compare both the
type of breakdown.
6. Why is Schottky diode preferred in high-speed applications?
7. Explain PIN photo diode.
8. Explain working principle of seven-segment LED display with circuit diagram.
9. With neat diagram explain Schottky diode.