PHYSICS QUALITY SPEAKS KOTA

CLASS QUESTION: SEMICONDUCTOR & LOGIC GATES

[Topic – 1] [Introduction] (b) the valence band is completely filled and the
conduction band is partially filled
ONLY THEORY
(c) the valence band is completely filled
[Topic – 2] [Semiconductor Example] (d) the conduction band is completely empty.
ONLY THEORY [Topic – 6] [Intrinsic Semiconductor]
[Topic – 3] [Band Theory] 7. Let np and ne be the numbers of holes and
1. Carbon, silicon and germanium have four valence conduction electrons in an intrinsic semiconductor.
electrons each. These are characterised by valence [NCERT THEORY]
and conduction bands separated by energy band (1) np > ne (2) nр = ne
gap respectively equal to (Eg)c, (Eg)si and (Eg)Ge. (3) np < ne (4) np ≠ ne
Which of the following statements is true? [Topic – 7] [Extrinsic Semiconductor]
[NCERT SOLVED EXAMPLE]
ONLY THEORY
(a) (Eg)c > (Eg)si > (Eg)Ge
(b) (Eg)c > (Eg)Ge > (Eg)si [Topic – 8] [N Type Semiconductor]
(c) (Eg)c < (Eg)Ge < (Eg)si 8. In an n-type silicon, which of the following
(d) (Eg)c < (Eg)si < (Eg)Ge statement is true:
2. C and Si both have same lattice structure; having 4 [NCERT THEORY]
bonding electrons in each. However, C is insulator (1) Electrons are majority carriers and trivalent
whereas Si is intrinsic semiconductor. This is atoms are the dopants.
because (2) Electrons are minority carriers and
[NEET - 2012] pentavalent atoms are the dopants.
(a) in case of C the valence band is not completely (3) Holes are minority carriers and pentavalent
filled at absolute zero temperature atoms are the dopants.
(b) in case of C the conduction band is partly filled (4) Holes are majority carriers and trivalent
even at absolute zero temperature atoms are the dopants.
(c) the four bonding electrons in the case of C lie [Topic – 9] [P Type Semiconductor]
in the second orbit, whereas in the case of Si 9. A p-type semiconductor is
they lie in the third [NCERT THEORY]
(d) the four bonding electrons in the case of C lie
(1) positively charged
in the third orbit, whereas for Si they lie in the
(2) negatively charged
fourth orbit. (3) uncharged
[Topic – 4] [Hole] (4) uncharged at 0 Kelvin but charged at higher
3. Hole is temperatures.
[NCERT EXAMPLAR] 10. For a p-type semiconductor, which of the following
(a) an anti-particle of electron. statements is true?
(b) a vacancy created when an electron leaves a [NEET - 2019]
covalent bond. (1) Electrons are the majority carriers and
(c) absence of free electrons. trivalent atoms are the dopants.
(d) an artifically created particle. (2) Holes are the majority carriers and trivalent
4. Electric conduction in a semiconductor takes place
atoms are the dopants.
due to
[NCERT THEORY] (3) Holes are the majority carriers and
(1) electrons only pentavalent atoms are the dopants.
(2) holes only (4) Electrons are the majority carriers and
(3) both electrons and holes pentavalent atoms are the dopants.
(4) neither electrons nor holes 11. If a small amount of antimony is added to
[Topic – 5] [Semiconductor Becomes germanium crystal
[NEET - 2011]
Insulator at Ok]
(a) it becomes a p-type semiconductor
5. At absolute zero, Si acts as a
(b) the antimony becomes an acceptor atom
[NCERT THEORY]
(1) metal (2) semiconductor (c) there will be more free electrons than holes in
(3) insulator (4) none of these the semiconductor
6. In semiconductors at a room temperature (d) its resistance is increased.
[NCERT THEORY] 12. Which of the following, when added as an impurity
(a) the valence band is partially empty and the into the silicon produces n type semiconductor?
conduction band is partially filled [NEET - 1999]

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QUALITY SPEAKS KOTA PHYSICS
(a) B (b) Al [Topic – 11] [Current Due to Hole VS
(c) P (d) Mo Current Due to Free Electron]
13. When arsenic is added as an impurity to silicon, the 18. The electron concentration in an n-type
resulting material is semiconductor is the same as the hole
[NEET - 1996] concentration in a p-type semiconductor. An
(a) n-type conductor external (electric) field is applied across each of
(b) n-type semiconductor them. Compare the currents in them.
(c) p-type semiconductor [NEET-2021]
(d) none of these (1) No current will flow in p-type, current will only
14. Which one of the following statements is false? flow in n-type
[NEET - 2010] (2) Current in n-type = current in p-type
(3) Current in p-type > current in n-type
(a) Pure Si doped with trivalent impurities gives a
(4) Current in n-type > current in p-type
p-type semiconductor. 19. The ratio of electron and hole currents in a
(b) Majority carriers in a n-type semiconductor semiconductor is 7/4 and the ratio of drift velocities
are holes. of electrons and holes is 5/4, then the ratio of
(c) Minority carriers in a p-type semiconductor concentrations of electrons and holes will be
are electrons. [JEE MAINS]
(1) 5/7 (2) 7/5
(d) The resistance of intrinsic semiconductor
(3) 25/49 (4) 49/25
decreases with increase of temperature. 20. An intrinsic semiconductor has a resistivity of 0.50
[Topic – 10]  m at room temperature.
[Energy Bands of N-Type & P-Type] Find the intrinsic carrier concentration if the
15. In the energy band diagram of a material shown mobilities of electrons and holes are 0.39 m2 V–1 s-1
here, the open circles and filled circles denote holes and 0.11 m2 V–1 s–1 respectively.
and electrons respectively. The material is [JEE MAINS]
(1) 1.2 × 1018 m–3 (2) 2.5 × 1019 m–3
(3) 1.9 × 1020 m–3 (4) 3.1 × 1021 m–3
[Topic – 12] [PN Junction Diode]
21. Can we take one slab of p-type semiconductor and
physically join it to another n-type semiconductor
to get p-n junction? [YES / NO]
22. In an unbiased p-n junction, holes diffuse from the
p-region to n-region because
[NCERT BACK EXERCISE]
(a) free electrons in the n-region attract them.
(b) they move across the junction by the potential
[NEET - 2007] difference.
(c) hole concentration in p-region is more as
(a) an insulator (CB has some e–)
compared to n-region.
(b) a metal (Eg is Relatively large) (d) All the above
(c) an n-type semiconductor (no of free e–)
[Topic – 13]
(d) a p-type semiconductor.
[P-N Junction Diode Under Forward Bias]
16. Pure Si at 500K has equal number of electron (ne)
and hole (nh) concentrations of 1.5 × 1016 m–3. ONLY THEORY
Doping by indium increases ne to 4.5 × 1022 m–3. [Topic – 14]
The doped semiconductor is of [P-N Junction Diode Under Forward Bias]
[NEET-2011] 23. When a forward bias is applied to a p-n junction, it
(1) n-type with electron concentration [NCERT THEORY]
ne = 5 × 1022 m–3 (1) raises the potential barrier.
(2) p-type with electron concentration (2) reduces the majority carrier current to zero.
ne = 2.5 × 1010 m–3 (3) lowers the potential barrier.
(3) n-type with electron concentration (4) none of the above
ne = 2.5 × 1023 m–3 24. In Figure is the potential barrier across a p-n
(4) p-type having electron concentration junction, when no battery is connected across the
ne = 5 × 109 m–3 junction
17. Suppose a pure Si crystal has 5 × 1028 atoms m-3. It
is doped by 1 ppm concentration of pentavalent As.
Calculate the number of electrons and holes. Given
that ni = 1.5 × 1016 m–3.
[NCERT SOLVED EXAMPLE]
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PHYSICS QUALITY SPEAKS KOTA

(1) (2)

[NCERT EXEMPLAR]
(a) 1 and 3 both correspond to forward bias of
junction
(b) 3 corresponds to forward bias of junction and (3) (4)
1 corresponds to reverse bias of junction
(c) 1 corresponds to forward bias and 3
corresponds to reverse bias of junction.
25. The potential barrier existing across an unbiased p- 29. From the following diode circuit, which diode is in
n junction is 0.2 volt. What minimum kinetic energy forward baised condition
a hole should have to diffuse from the p-side to the [NEET-2000]
n-side if 0 –2 V
(I) The junction is unbiased?
(1)
(II) The junction is forward biased at 0.1 volt?
(III) The junction is reverse-biased at 0.1 volt? 0 2V
26. Which one of the following represents forward bias (2)
diode?
[NEET - 2013]
–5 V –2 V
(3)
0V R –2 V 5V 2V
(1)
(4)
–2 V R +2 V 30. In the case of forward biasing of p-n junction, which
(2) one of the following figures correctly depict the
direction of flow of carriers?
3V R 5V [NEET-1995]
(3)
0V R –2 V
(4)
27. In the following figure, the diodes which are
forward biased, are

31. The minority current in a p-n junction is :-

[HIGH LEVEL QUESTION]
(1) from the n-side to the p-side
(2) from the p-side to the n-side
(3) from the n-side to the p-side if the junction is
forward-biased and in the opposite direction
if it is reverse biased.
(4) from the p-side to the n-side if the junction is
forward-biased and in the opposite direction
[NEET-2011] if it is reverse biased
32. The majority current in a p-n junction is :-
(1) (C) only (2) (C) and (A) [HIGH LEVEL QUESTION]
(3) (B) and (D) (4) (A), (B) and (D) (1) from the n-side to the p-side
28. Of the diodes shown in the following figures, which
(2) from the p-side to the n-side
one is reverse biased?
[NEET-2004] (3) from the n-side to the p-side if the junction is
forward-biased and in the opposite direction
if it is reverse biased

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QUALITY SPEAKS KOTA PHYSICS
(4) from the p-side to the n-side if the junction is
forward-biased and in the opposite direction
if it is reverse biased
33. Diffusion current in a p-n junction is greater than
the drift current in magnitude: -
[HIGH LEVEL QUESTION]
(1) if the junction is forward-biased
(2) if the junction is reverse-biased
(3) if the junction is unbiased
[NEET-2022]
(4) in no case
(1) Circuit (2) only
34. In a __________ biased P-N junction, the (net) flow (2) Circuit (3) only
holes is from N-region to the P-region: - (3) Both circuits (1) & (3)
[HIGH LEVEL QUESTION] (4) Circuit (1) only
(1) F.B. (2) R. B. 39. In the given figure, a diode D is connected to an
(3) Unbiased (4) both 1 & 2 external resistance R = 100  and an e.m.f. of 3.5
V. If the barrier potential developed across the
[Topic – 15] [Real VS Ideal Diode] diode is 0.5 V, the current in the circuit will be
35. In which case, the currents through the resistances
in the circuits shown in figure is 0.
[H.C. VERMA]
(1) (2)

(3) (4) (NEET - 2015)

(a) 20 mA (b) 35 mA
(c) 30 mA (d) 40 mA
36. The current in the circuit will be 40. What is the value of current I in given circuits

[NEET - 2001]
(1) 5/40 A (2) 5/50 A
(3) 5/10 A (4) 5/20 A [AIIMS]
37. What is the value of current I in given circuits 41. The reading of the ammeter for a silicon diode in
the given circuit is:

[JEE MAINS]
(1) 13.5 mA (2) 0
(3) 15 mA (d) 11.5 mA
[JEE MAINS]
42. Find the value of current I in given circuit.
38. In the given circuits (1), (2) and (3), the potential
drop across the two p-n junctions are equal in:

[AIIMS]

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43. Choose the correct circuit which can achieve the
bridge balance.
[NEET-2024]

[NEET-2022 (Abroad)]
(1) (2)
(1)

(2)
(3) (4)

[Topic – 16] [V-I Characteristic & Dynamic (3)

Resistance Semiconductors]
Only Theory
[Topic – 17] (4)
[Dynamic Resistance Semiconductors]
44. The V-I characteristic of a silicon dioide is shown in 48. The circuit represents a full wave bridge
the. Calculate the resistance of the dioide at (a) ID =
rectifier when switch S is open. The output
15 mA and (b) VD = –10V.
voltage (V0) pattern across RL when S is closed
[NCERT SOLVED EXAMPLE]
is:

(1)

[Topic – 18] [Rectifier]

Only Theory
(2)
[Topic – 19] [Half Wave Rectifier Diagram]
Only Theory
[Topic – 20] [Full Wave Rectifier Diagram]
45. In half wave rectification, if the input frequency is (3)
60 Hz, then the output frequency is would be:
[NEET-2022]
(1) 30 Hz (2) 60 Hz
(4)
(3) 120 Hz (4) Zero
46. If input frequency is 50 Hz. Then:
(1) output frequency in half wave rectification 49. A full wave rectifier circuit with diodes (D1) and (D2)
is 25 Hz. is shown in the figure. If input supply voltage Vin =
220 sin (100 t) volt, then at t = 15 m sec.
(2) output frequency in full wave rectification
is 50 Hz. 7
(3) output frequency in half wave rectification
is 50 Hz.
(4) Both (1) & (2)
[Tough Question on Rectifier]
47. The circuit represents a full wave bridge
rectifier when switch S is open. The output
voltage (V0) pattern across RL when S is closed
[NEET-2025]
is:
(1) D₁ is forward biased, D2 is reverse biased
(2) D₁ is reverse biased, D2 is forward biased

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QUALITY SPEAKS KOTA PHYSICS
(3) D₁ and D2 both are forward biased
(4) D₁ and D2 both are reverse biased
50. If in a p-n junction, a square input signal of 10 V is
applied as shown, then the output across R1 will be

[NEET-2015] [JEE MAINS]

(1) (2) (1) 50 mA (2) 0

(3) 30 mA (4) 20 mA
[Topic – 23] [Light Emitting Diode (LED)]
54. A p - n photodiode is made of a material with a
(3) (4)
band gap of 2.0 eV. The minimum frequency of the
radiation that can be absorbed by the material is
Topic – 21] [Filter] nearly
(2008)
(H.W.) A full wave rectifier circuit consists of two p-n
(a) 1 × 1014 Hz (b) 20 × 1014 Hz
junction diodes, a centre-tapped transformer,
(c) 10 × 1014 Hz (d) 5 × 1014 Hz
capacitor and a load resistance. Which of these
55. An LED is constructed from a p-n junction diode
components remove the ac ripple from the
using GaAsP. The energy gap is 1.9 eV. The
rectified output?
wavelength of the light emitted will be equal to
[NEET-2023]
[NEET-Odisha-2019]
(1) A centre-tapped transformer
(2) p-n junction diodes (1) 654 × 10–11 m (2) 10.4 × 10–26 m
(3) Capacitor () 654 nm (4) 654 Å
(4) Load resistance
[Topic – 22] [Zender Diode] [Topic – 24] [Photodiode]
51. Consider the following statements (A) and (B) and
Only Theory
identify the correct answer. [Topic – 25] [Solar Cell]
(A) A zener diode is connected in reverse bias, 56. Consider the following statements A and B and
when used as a voltage regulator. identify the correct answer:
(B) The potential barrier of p-n junction lies
between 0.1 V to 0.3 V.
[NEET-2021]
(1) (A) is incorrect but (B) is correct.
(2) (A) and (B) both are correct.
A. For a solar-cell the I-V characteristics lies in the
(3) (A) and (B) both are incorrect. IV quadrant of the given graph.
(4) (A) is correct and (B) is incorrect. B. In a reverse biased pn junction diode, the
52. A zener diode, having breakdown voltage equal to current measured in (A), is due to majority
15V, is used in a voltage regulator circuit shown in charge carriers.
figure. The current through the diode is (1) A is correct but B is incorrect
(2) A is incorrect but B is correct
(3) Both A and B are correct
(4) Both A and B are incorrect
57. Given below are two statements:
Statement I: Photovoltaic devices can convert
[NEET-2011] optical radiation into electricity.
(1) 10 mA (2) 15 mA Statement II: Zener diode is designed to operate
(3) 20 mA (4) 5 mA under reverse bias in breakdown region.
53. A Zener diode of breakdown voltage 10 V is used as In the light of the above statements, choose the
a voltage regulator as shown in the figure. The most appropriate answer from the options given
current through the Zener diode is below:
[JEE MAINS]
(1) Both Statement I and Statement II are
incorrect.
(2) Statement I is correct but Statement II is
incorrect.

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(3) Statement I is incorrect but Statement II is (C)AND (d) NAND
correct. 71. The symbolic representation of four logic gates are
(4) Both Statement I and Statement II are correct. given here
58. The given graph represents V-I characteristic for a
semiconductor device. Which of the following
statement is correct?

The logic symbols for OR, NOT and NAND gates are
respectively
(a) (iv), (i), (iii) (b) (iv), (ii), (i)
(c) (i), (iii), (iv) (d) (iii), (iv), (ii)
72. The output of the logic circuit shown is equivalent
(NEET - 2014)
to a/an:
(a) It is V-I characteristic for solar cell where,
point A represents open circuit voltage and Y
point B short circuit current.
(b) It is for a solar cell and points A and B (1) OR gate (2) NOR gate
represent open circuit voltage and current, (3) AND gate (4) NAND/gate
respectively. 73. The output of the logic circuit shown is equivalent
(c) It is for a photodiode and points A and B to a/an:
represent open circuit voltage and current,
respectively.
(d) It is for a LED and points A and B represent
open circuit voltage and short circuit current, (1) OR gate (2) NOR gate
respectively. (3) AND gate (4) Not gate
74. The output (Y) of the given logic gate is similar to
Theory Based Question Discussed in Class the output of an/a
59. Diffusion Current Reason?
60. Diffusion Current Direction?
61. Diffusion Current Carriers?
62. Depletion Layer contains?
63. Drift Current Reason?
64. Drift Current Direction? [NEET-2024]
65. Drift Current Carrier?
(1) NAND gate (2) NOR gate
66. Trend of Diffusion & Drift Current in unbiased P-N
Diode? (3) OR gate (4) AND gate
LOGIC GATES 75. The figure shows a logic circuit with two inputs A
and B and the output C. The voltage wave forms
67. NAND and NOR gates are called universal gates
across A, B and Care as given. The logic circuit gate
primarily because they
is:
(a) are available universally
(b) can be combined to produce OR, AND and NOT
gates
(c) are widely used in Integrated circuit packages
(d) are easiest to manufacture
68. Which of the following gate is called universal gate?
(1) NOT gate (2) OR gate
(3) AND gate (4) NAND gate & NOR
69. What is the output Y in the following circuit, when
all the three inputs A, B, C are first 0 and then 1?
[NEET-2012]
(1) OR gate (2) NOR gate
(3) AND gate (4) NAND gate
76. For the given circuit, the input digital signals are
(a) 0,1 (b) 0,0 applied at the terminals A, B and C. What 1 would
(c) 1,0 (d) 1,1 be the output at the terminal y?
70. The truth-table given below is for which gate?
A B C
0 0 1
0 1 1
1 0 1
1 1 0
(a) XOR (b)OR

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The expression for the output Y is:
[NEET-2024]
(1) AB+ A (2) AB+ A
[NEET-2021] (3) B (4) B
79. The correct Boolean operation represented by the
(1) circuit diagram drawn is

(2)

(3)

(4)

77. The output(X) of the logic circuit shown in figure (a) NOR (b) AND
will be
(c) OR (d) NAND
80. The output (Y) of the given logic implementation is
similar to the output of an/a _____ gate.
[NEET-2013]
(1) X = AB (2) X = A B
(3) X = A + B (4) X = A + B
78. A logic circuit provides the output Y as per the
following truth table:
A B Y
0 0 1 (1) NOR (2) AND
(3) NAND (4) OR
0 1 0
1 0 1
1 1 0

ANSWER KEY
1. 1 29. 1, 4
2. 3 30. 2
3. 2 31. 1
4. 3 32. 2
5. 3 33. 1
6. 1 34. 2
7. 2 35. 2
8. 3 36. 2
9. 3 37. 1A
10. 2 38. 3
11. 3 39. 3
12. 3 40. 2 mA
13. 2 41. 4
14. 2 42. 0.25A
15. 4 43. 1
16. 1 44. (a) – (10 ), (b) = (107)
17. 4.5 × 109 m–3 45. 2
18. 4 46. 3
19. 2 47. 1
20. 2 48. 1
21. NO 49. 2
22. 3 50. 2
23. 3 51. 4
24. 2 52. 1
25. (i = 0.2), (ii = 0.1), (iii = 0.3) 53. 3
26. 1 54. 4
27. 3 55. 3
28. 3 56. 1

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57. 4
58. 1
59. {Concentration Gradient/difference}
60. {p Type to N type}
61. {Majority carrier’s i.e. Free electrons in N type: e– &
holes in P type}
62. {Immobile charges}
63. {Electric Field of Depletion Region}
64. {N to P Type (Opp to diffusion)}
65. {Minority carriers i.e. Free electrons in P type &
holes in N type}
66. {Diffusion Current Initially large then decrease}
{Drift Current initially small then increase}
At equilibrium, both become equal and Opp and
net current = 0.
67. 2
68. 4
69. 3
70. 4
71. 2
72. 1
73. 4
74. 4
75. 1
76. 3
77. 2
78. 3
79. 1
80. 1

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