Electronic Principles and

Circuits / BEC303

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By

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Dr. Ramalingam. H.M,

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Mangalore Institute of Technology & Engineering
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Moodabidri-Karnataka
Module-2

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Biasing in MOS amplifier circuits: Fixing VGS, Fixing VG, Drain to Gate

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feedback resistor. Small signal operation and modelling: The DC bias

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point, signal current in drain, voltage gain, small signal equivalent circuit
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models, transconductance, The T equivalent circuit model. MOSFET
Amplifier configuration: Basic configurations, characterizing amplifiers, CS
amplifier with and without source resistance, The Common Gate Amplifier,
Source follower
 Biasing in MOS Amplifier Circuits
Biasing by Fixing VGS

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The use of fixed bias (constant VGS) can result in a large variability in the value of ID. Devices 1 and 2 represent
extremes among units of the same type.
 Biasing in MOS Amplifier Circuits
Biasing by Fixing VG and Connecting a Resistance in the Source

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Biasing using a fixed voltage at the gate, VG, and a resistance in
the source lead, RS: (a) basic arrangement;

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(b) reduced variability in ID;
(c) practical implementation using a single supply;
(d) coupling of a signal source to the gate using a capacitor CC1;

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 Biasing in MOS Amplifier Circuits
Biasing Using a Drain-to-Gate Feedback Resistor

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Biasing in MOS Amplifier Circuits
Biasing Using a Constant-Current Source

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(a) Biasing the MOSFET using a constant-current source I.

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Conceptual circuit utilized to study the operation of

The total instantaneous gate-to source voltage will be

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To reduce the nonlinear distortion introduced by the MOSFET, the input signal should be kept small
so that
Small-Signal Operation and Models
The Signal Current in the Drain Terminal

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If this small-signal condition is satisfied

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Small-Signal Operation and Models
The Voltage Gain

the total instantaneous drain voltage vDS as follows:

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Small-Signal Operation and Models
Separating the DC Analysis and the Signal Analysis

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Small-Signal Operation and Models
Small-Signal Equivalent-Circuit Models

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Small-Signal Operation and Models
The Transconductance gm

We shall now take a closer look at the MOSFET transconductance given by

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Small-Signal Operation and Models
The T Equivalent-Circuit Model

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Development of the T equivalent-circuit model for the MOSFET. For simplicity, ro has
been omitted; however, it may be added between D and S in the T model of (d).
Small-Signal Operation and Models
The T Equivalent-Circuit Model

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(a) The T model of the MOSFET augmented with the drain-to-source resistance ro.
(b) (b) An alternative representation of the T model
Basic MOSFET Amplifier Configurations
The Three Basic Configurations

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Basic MOSFET Amplifier Configurations
Characterizing Amplifiers

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Characterization of the amplifier as a functional block: (a) An amplifier fed with a voltage signal vsig having
a source resistance Rsig, and feeding a load resistance RL; (b) Equivalent-circuit representation of the circuit
in (a); (c) Determining the amplifier output resistance R
 Basic MOSFET Amplifier Configurations
The Common-Source (CS) Amplifier

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 Basic MOSFET Amplifier Configurations
The Common-Source Amplifier with a Source Resistance

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The CS amplifier with a source resistance Rs: (a) Circuit without bias details; (b) Equivalent
circuit with the MOSFET represented by its T model.
 Basic MOSFET Amplifier Configurations
The Common-Gate (CG) Amplifier

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(a) Common-gate (CG) amplifier with bias arrangement omitted. (b) Equivalent circuit of the
CG amplifier with the MOSFET replaced with its T model.
 Basic MOSFET Amplifier Configurations
The Common-Drain Amplifier or Source Follower

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 Basic MOSFET Amplifier Configurations
The Common-Drain Amplifier or Source Follower

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(a) Common-drain amplifier or source follower. (b) Equivalent circuit of the
source follower obtained by replacing the MOSFET with its T model. Note that ro
appears in parallel with RL and in discrete circuits, ro RL. Neglecting ro, we obtain
the simplified equivalent circuit in (c)
Basic MOSFET Amplifier Configurations

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