1.

The conductivity of a semiconductor increases with increase in temperature because

(1) Number density of free current carriers increases
(2) Relaxation time increases
(3) Both number density of carriers and relaxation time decreases but effect of decrease in relaxation time
is much more than increase in number density.
(4) Number density of current carriers increase, relaxation time decreases but effect of decrease in
relaxation time is much less than increases in number density.
2. Copper and silicon is cooled from 300 𝐾 to 60 𝐾, the specific resistance
(1) Decrease in copper but increase in silicon
(2) Increase in copper but decrease in silicon
(3) Increase in both
(4) Decrease in both
3. In 𝑛 - type semiconductor when all donor states are filled, then the net charge density in the donor states
becomes:
(1) 1
(2) < 1, but not zero
(3) >1
(4) zero
4. A transistor is operated in 𝐶𝐸 configuration at 𝑉𝑐𝑐 = 2 𝑉 such that a change in base current from 100𝜇𝐴 to
200𝜇𝐴 produces a change in the collector current from 9 𝑚𝐴 to 16.5 𝑚𝐴. The value of current gain, 𝛽 is
(1) 45
(2) 50
(3) 60
(4) 75
5. An electric field is applied to a semiconductor. Let the number of charge carries be 𝑛 and the average drift speed
be 𝑣. If the temperature is increased,
(1) both 𝑛 and 𝑣 will increase
(2) 𝑛 will increase but 𝑣 will decrease
(3) 𝑣 will increases but 𝑛 will decrease
(4) both 𝑛 and 𝑣 will decrease
6. Which of the following circuits are used for full wave rectification?

(1) I, II and III

(2) II, III and IV
(3) I, III and IV
(4) I, II and IV
7. The circuit shown below is an electrical analogue for which of the following logic gates?

(1) AND gate

(2) OR gate
(3) NOT gate
(4) NOR gate
8. In a 𝑝 − 𝑛 junction the depletion layer of thickness 10−6 𝑚 has potential across it is 0.1 𝑉. The average electric
field is (𝑉/𝑚) :
(1) 107
(2) 10−6
(3) 105
(4) 10−5
9. A transistor is used in common emitter configuration. If 𝛽 = 100 and 𝑉𝐵𝐸 = 0.7𝑉, then for the given amplifier
(in figure) the co-ordinates of operating point (𝑉𝐶𝐸 , 𝐼𝑐 ) is

(1) (5𝑉, 5𝑚𝐴)

(2) (7𝑉, 5𝑚𝐴)
(3) (7𝑉, 0.05𝑚𝐴)
(4) (4.3𝑉, 0.05𝑚𝐴)
10. In 𝑝 − 𝑛 junction photocell electromotive force due to monochromatic light is proportional to
(1) 𝑝 − 𝑛 potential barrier
(2) intensity of light
(3) frequency of light
(4) 𝑝 − 𝑛 applied voltage
11. A full wave rectifier circuit consists of two 𝑝 − 𝑛 junction diodes, a centre-tapped transformer, capacitor and a
load resistance. Which of these components remove the ac ripple from the rectified output?

[NEET 2023]
(1) p-n junction diodes
(2) Capacitor
(3) Load resistance
(4) A centre-tapped transformer
12. For a transistor amplifier power gain and voltage gain are 7.5 and 2.5 respectively. The value of the current gain
will be
(1) 0.33
(2) 0.66
(3) 0.99
(4) 3
13. Identify the gate represented by the block diagram is

(1) AND
(2) NOT
(3) NAND
(4) NOR
14. There is no hole current in conductors because they have
(1) High conductivity
(2) High electron density
(3) No valence band
(4) Overlapping of valence and conduction bands
15. In a common emitter transistor circuit, the base current is 40𝜇𝐴, then 𝑉𝐵𝐸 is

(1) 2𝑉
(2) 0.2 𝑉
(3) 0.8 𝑉
(4) Zero
16. A transistor is operated in 𝐶𝐸 configuration at 𝑉𝛼 = 2 𝑉 such that a change in base current from 100𝜇𝐴 to 200𝜇𝐴
produces a change in the collector current from 9 𝑚𝐴 to 16 𝑚𝐴. The value of current gain, 𝛽 is
(1) 45
(2) 50
(3) 60
(4) 70
17. Avalanche breakdown is due to:
(1) Collision of minority charge carriers
(2) Increase in depletion layer thickness
(3) Decrease in depletion layer thickness
(4) None of these
18. Barrier potential of a 𝑝 − 𝑛 junction diode does not depend on
(1) Doping
(2) Temperature
(3) Forward bias
(4) Diode design
19. In the circuit shown, the barrier voltage of diode is 0.7 V. Match the physical quantities given in List I to the
results given in List II and mark the correct option from the codes given below.

List I

List II
(a)
Peak current (in mA) in diode
(i)
37.8
(b)
Peak voltage (in volts) at the ends of load
(ii)
40.0
(c)
Peak current (in mA), if diode is ideal
(iii)
20.0
(d)
Peak voltage (in volts) at the ends of load, if diode is ideal
(iv)
18.9

(v)
Zero
(1) (a)-(i), (b)-(ii), (c)-(iii), (d)-(v)
(2) (a)-(i), (b)-(iii), (c)-(v) , (d)-(iv)
(3) (a)-(i), (b)- (iii), (c)-(iv) , (d)-(ii)
(4) (a)-(i), (b)-(iv), (c)-(ii) , (d)-(iii)
20. For a p-type semiconductor, which of the following statements is true?
(1) Electrons are the majority carriers and pentavalent atoms are the dopants
(2) Electrons are the majority carriers and trivalent atoms are the dopants.
(3) Holes are the majority carriers and trivalent atoms are the dopants
(4) Holes are the majority carriers and pentavalent atoms are the dopants.
21. The input resistance of a silicon transistor is 1𝑘. If base current is changed by 100𝜇𝐴, it causes the change in
collector current by 2 𝑚𝐴. This transistor is used as a 𝐶𝐸 amplifier with a load resistance of 5𝑘𝛺. What is the ac
voltage gain of amplifier?
(1) 10
(2) 100
(3) 500
(4) 200
22. For the logic circuit shown, the truth table is;

(1)
 (2)

(3)

(4)
23. When a 𝑝 - 𝑛 junction is reverse biased
(1) Electrons and holes are attracted towards each other and move towards the depletion region
(2) Electrons and holes move away from the depletion region
(3) Height of the potential barrier decreases
(4) No change in current take place
24. In the given circuit, the current through the resistor 2 kW is

(1) 2 mA
(2) 4 mA
(3) 6 mA
(4) 1 mA
25. Depletion layer contains;
(1) Only immobile negative and positive ions
(2) Only free charge carrier
(3) Both free carrier and immobile ions
(4) None of the above
26. Which of the following gates corresponds to the truth table given below?
A B Y
1 1 0
 1 0 1
0 1 1
0 0 1
(1) NAND
(2) NOR
(3) XOR
(4) OR
27. The materials suitable for making a solar cell
(1) 𝑃𝑏𝑆
(2) GaAs
(3) 𝐶𝑑𝑆𝑒
(4) 𝐺𝑒
28. In an oscillator,
I. we get AC output without any external input signal.
II. output is self sustained.
III. feedback can be achieved by inductive coupling (through mutual inductance) or 𝐿 − 𝐶 or 𝑅 − 𝐶 networks.
Incorrect statement is
(1) Only I
(2) Only II
(3) Only III
(4) None of these
29. Current in the circuit will be

5
(1) 40
𝐴
5
(2) 50
𝐴
5
(3) 10
𝐴
5
(4) 𝐴
20
30. The following logic gate circuit is equivalent to:

(1) NOR gate

(2) OR gate
(3) AND gate
(4) NAND gate
31. In a 𝑝 - 𝑛 junction, the barrier potential offers resistance to
(1) Free electrons in 𝑛-side and holes in 𝑝-side
(2) Free electrons in 𝑝-side and holes in 𝑛-side
(3) Only free electrons in 𝑛-side
(4) Only holes in 𝑝-side
32. Figure shows the practical realization of a logical gate. Identify the logic gate

(1) NAND
(2) NOR
(3) XOR
(4) XNOR
33. See the circuit shown in the figure. Name the gate that the given circuit resembles.

(1) NAND
(2) AND
(3) 𝑂𝑅
(4) NOR
34. If 𝛼 and 𝛽 are the current gains for common base and common emitter configuration of bipolar junction
transistor, then correct relation between 𝛼 and 𝛽 is
1 1
(1) 𝛼
+𝛽 =1
1 1
(2) 𝛼
−𝛽 =1
(3) 𝛼+𝛽 =1
(4) 𝛼⋅𝛽 =1
35. In a pure semiconductor, the number of conduction electrons is 6 × 1019 per cubic metre. How many holes are
there in a sample of size 1𝑐𝑚 × 1𝑐𝑚 × 1𝑚𝑚 ?
(1) 6 × 1026
(2) 6.× 1019
(3) 6 × 1012
(4) 3 × 1026
36. Which one is universal gate?
(1) AND gate
(2) NOT gate
(3) OR gate
(4) NAND gate
37. Which of the following gate is called universal gate?
(1) NOT gate
(2) OR gate
(3) AND gate
(4) NAND gate
38. The fermi energy for a substance is
(1) independent of 𝑇
(2) directly proportional to √𝑇
 (3) directly proportional to 𝑇
(4) directly proportional to 𝑇 2
39. Given below are two statements:
Statement I: Photodiode generally works in reverse bias condition.
Statement II: Reverse bias facilitates easier detection of current changes in photodiodes.
In the light of the above statements, choose the most appropriate answer from the options given below:
(1) Statement I and Statement II both are correct.
(2) Statement I is correct but Statement II is incorrect.
(3) Statement I is incorrect but Statement II is correct.
(4) Statement I and Statement II both are incorrect.
1
40. In a semiconducting material (5) th of the total current is carried by the holes and the remaining is carried by the
electrons. The drift speed of electrons is twice that of holes at this temperature, the ratio between the number
densities of electrons and holes is
(1) 4
(2) 5
(3) 6
(4) 2
41. The input resistance of a silicon transistor is 50𝛺. Base current is changed by 20𝜇𝐴, which results in a change in
collector current by 1𝑚𝐴. This transistor is used as a common emitter amplifier with a load resistance of 2𝑘𝛺.
The voltage gain of amplifier is
(1) 4000
(2) 2000
(3) 1000
(4) None of these
42. Which one of the following statements is false?
(1) Pure Si doped with trivalent impurities gives a p-type semiconductor
(2) Majority carriers in a n-type semiconductor are holes
(3) Minority carriers in a p-type semiconductor are electrons
(4) The resistance of intrinsic semiconductor decreases with increase of temperature
43. What is the output Y in the following circuit, when all the three inputs, A, B, C are first 0 an then 1?

(1) 0, 1
(2) 0, 0
(3) 1, 0
(4) 1, 1
44. A silicon diode has a forward voltage drop of 1.2 𝑉 for a forward 𝐷𝐶 current of 100 𝑚𝐴. It has a reverse current
of 1 × 10−6 𝐴 for a reverse voltage of 10 𝑉. The bulk and reverse resistance of diode are:
(1) 5𝛺, 10𝑀𝛺
(2) 6𝛺, 6𝑀𝛺
(3) 7𝛺, 70𝑀𝛺
(4) 5𝛺, 1𝑀𝛺
45. A common emitter transistor amplifier has a current gain of 50 . If the load resistance is 9𝑘𝛺 and the input
resistance is 500𝛺, the voltage gain of the amplifier will be
(1) 900
(2) 300
(3) 200
(4) 100
46. For the given circuit, the input digital signals are applied at the terminals A, B and 𝐶. What would be the output at
the terminal y ?

(1)

(2)
(3)

(4)
47. Correct statement for diode is:
(1) in full wave rectifier both diodes work alternatively.
(2) in full wave rectifier both diodes work simultaneously.
(3) efficiency of full wave rectifier and half wave rectifier is same.
(4) full wave rectifier is bidirectional.
48. In an insulator, the forbidden energy gap between the valence band and conduction band is of the order of
(1) 1𝑀𝑒𝑉
(2) 0.1𝑀𝑒𝑉
(3) 1𝑒𝑉
(4) 5𝑒𝑉
49. I. The resistivity of a semiconductor increases with temperature.
II. The atoms of a semiconductor vibrate with larger amplitudes at higher temperatures thereby decreasing its
resistivity.
Choose the correct statement from the given options.
(1) Only I
(2) Only II
(3) Both I and II
(4) None of these
50. The impurity atoms with which pure silicon should be doped to make a 𝑝-type semiconductor are those of
(1) Phosphorus
(2) Antimony
(3) Boron
(4) Copper
1. (4)
2. (1)
3. (2)
4. (4)
5. (2)
6. (2)
7. (3)
8. (3)
9. (2)
10. (2)
11. (2)
12. (4)
13. (4)
14. (4)
15. (2)
16. (4)
17. (1)
18. (4)
19. (4)
20. (3)
21. (2)
22. (4)
23. (2)
24. (3)
25. (1)
26. (1)
27. (2)
28. (4)
29. (2)
30. (1)
31. (1)
32. (1)
33. (2)
34. (2)
35. (3)
36. (4)
37. (4)
38. (1)
39. (1)
40. (4)
41. (2)
42. (2)
43. (3)
44. (1)
45. (1)
46. (3)
47. (1)
48. (4)
49. (4)
50. (3)