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The document contains a series of assignments related to the properties and calculations of semiconductor materials, specifically focusing on germanium (Ge) and its electrical characteristics. It includes tasks on calculating electrical conductivity, diffusion constants, mobilities, and photon emissions related to electron-hole recombination. Additionally, it addresses the effects of doping and temperature on semiconductor behavior.

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5 views1 page

Ass 2

The document contains a series of assignments related to the properties and calculations of semiconductor materials, specifically focusing on germanium (Ge) and its electrical characteristics. It includes tasks on calculating electrical conductivity, diffusion constants, mobilities, and photon emissions related to electron-hole recombination. Additionally, it addresses the effects of doping and temperature on semiconductor behavior.

Uploaded by

raghunathworkingonline
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd

Electronics Devices and Circuits (EC12101) Assignment-1(b)

[1]. At 300K, Ge has an intrinsic concentration of 1.5X1019 m-3. If the electron mobility is 0.14m2/(V.s)
and the hole mobility is 0.05 m2/(V.s) and calculate the electrical conductivity of intrinsic Ge. Also,
calculate the diffusion constants for electrons and holes.
[2]. At room temperature, carrier density of Ge has an intrinsic concentration of 1.5X1019 m-3. It is doped
with As atoms with a concentration of one As atom per million atoms of Ge. If the Ge atom density
is 5X1028 m-3, determine the conductivity of the semiconductor. Assume complete ionization of As
atoms and take µn=0.14 m2/(V.s).
[3]. The effective mass of an electron is 0.07m0 in a semiconductor, and that of a hole is 0.37m0, where
m0 is the rest mass of an electron. If the relaxation time for hole is 0.5 times that for the electron,
find the hole mobility, if the electron mobility is 9000cm2/(V.s).
[4]. The band gap of a semiconductor is 2.4 eV. When an electron jumps from the conduction band to
the valence band to recombine with a hole, what is the wavelength of the emitted electromagnetic
radiation?
[5]. A semiconductor has a band gap of 2.4 eV. During electron–hole recombination, 20% of the band-
gap energy is lost as heat due to lattice vibrations. Find: Energy of the emitted photon, Wavelength
of the emitted radiation, Region of the electromagnetic spectrum.
[6]. The intrinsic carrier concentration of a semiconductor is 2.5X1019 m-3 . When acceptor atoms are
introduced Hole, concentration is 600 times the electron concentration. Find Hole concentration,
Electron concentration, Whether the semiconductor is lightly or heavily doped
[7]. A cylindrical n-type semiconductor has a cross-sectional area of 0.2 cm2 and carries a current of 15
mA. The electron concentration is 8×1014 cm-3. Find: Current density, Average drift velocity of
electrons, If the length of the specimen is 3 cm and the applied voltage is. 0.45 V, determine:
Electron mobility and Electrical conductivity
[8]. The hole mobility in a semiconductor is 0.06 m2/(V.s) at room temperature. What is the diffusivity
of the holes at that temperature?
[9]. At room temperature: Electron mobility µn=0.18 m2/(V.s) Hole mobility µp=0.06 m2/(V.s).
Determine: Ratio of electron diffusivity to hole diffusivity, Which carrier diffuses faster and why?
[10]. The hole mobility of a semiconductor varies with temperature as: μp∝T−3/2 . At 300 K:
μp=0.06 m2/(V.s). Find: Hole diffusivity at 300 K. Hole diffusivity at 600 K.

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