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Module 1 Extra Biasing

The document discusses various biasing configurations for Bipolar Junction Transistors (BJTs), including fixed bias, emitter bias, and voltage-divider bias, highlighting their stability and performance characteristics. It also covers the concept of transistor saturation and the impact of internal capacitances on high-frequency performance, including the Miller effect. Additionally, it outlines an assignment related to these topics, due on September 25, 2023.

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0% found this document useful (0 votes)
12 views37 pages

Module 1 Extra Biasing

The document discusses various biasing configurations for Bipolar Junction Transistors (BJTs), including fixed bias, emitter bias, and voltage-divider bias, highlighting their stability and performance characteristics. It also covers the concept of transistor saturation and the impact of internal capacitances on high-frequency performance, including the Miller effect. Additionally, it outlines an assignment related to these topics, due on September 25, 2023.

Uploaded by

healio391
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

Electronic Circuits 1

EE1003E: L7
BJT
Fixed bias

Determine the Q-point set by the applied


fixed bias configuration.

20-09-2023 EE1003E 2
20-09-2023 EE1003E 3
BJT
Collector Feedback Bias

20-09-2023 EE1003E 4
BJT • The addition of the emitter resistor to the dc bias of the BJT
Emitter bias config. provides improved bias stability.
• The dc bias currents and voltages remain closer to where they
were set by the circuit when outside conditions, such as
temperature and transistor beta, change.

20-09-2023 EE1003E 5
BJT
Emitter bias config.

20-09-2023 EE1003E 6
BJT
Emitter bias config.

20-09-2023 EE1003E 7
BJT
Emitter bias config.

20-09-2023 EE1003E 8
BJT
Emitter bias config.

• For the given emitter-bias


network determine:

20-09-2023 EE1003E 9
BJT
Emitter bias config.

20-09-2023 EE1003E 10
BJT
Emitter bias config.

20-09-2023 EE1003E 11
• The term saturation is applied to any system where
levels have reached their maximum values.
BJT
• For a transistor operating in the saturation region, the
current is maximum for the particular design. Transistor Saturation

• Often the highest saturation level is defined by the


maximum collector current as provided by the
specification sheet.

Fixed Bias

20-09-2023 EE1003E 12
• The collector saturation level or maximum collector current for
an emitter-bias design can be determined using the same
BJT
approach applied to the fixed-bias configuration
Transistor Saturation
• Apply a short circuit between the collector–emitter terminals
and calculate the resulting collector current.

Fixed Bias

20-09-2023 EE1003E 13
BJT
Assignment - 1

Submission on 25/09/2023 before 11:00 PM.

20-09-2023 EE1003E 14
BJT
Voltage-Divider Bias

20-09-2023 EE1003E 15
BJT
• Useable for any voltage divider bias configuration. Voltage-Divider Bias

20-09-2023 EE1003E 16
BJT
Voltage-Divider Bias

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BJT
• Thevenin equivalent Voltage-Divider Bias
circuit is

20-09-2023 EE1003E 18
BJT
Voltage-Divider Bias

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BJT
Voltage-Divider Bias

20-09-2023 EE1003E 20
BJT
Voltage-Divider Bias

• The second approach is referred to


as the approximate method
• It can be applied only if specific
conditions are satisfied.
• The approximate approach permits
a more direct analysis with a
savings in time and energy.

20-09-2023 EE1003E 21
• The condition that will define whether the
approximate approach can be applied is

BJT
Voltage-Divider Bias

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BJT
Voltage-Divider Bias

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BJT
Voltage-Divider Bias

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BJT
CE: The inverting configuration

20-09-2023 EE1003E 25
BJT
CE: The inverting configuration

20-09-2023 EE1003E 26
BJT
Transistor internal capacitances

• There are very small capacitances in a BJT between the


collector and the base, and the base and the emitter.
• Since the capacitor values are very small, their impedance
at low and moderate frequencies is large.

• At low and moderate frequencies, these capacitor


impedances are approximately open circuits, and thus
they can be ignored.
• However, at high frequencies, the capacitor impedance
can drop to moderate values

20-09-2023 EE1003E 27
BJT
Transistor
internal
capacitances

20-09-2023 EE1003E 28
BJT
Transistor internal capacitances

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BJT
Transistor internal capacitances

20-09-2023 EE1003E 30
BJT
Transistor internal capacitances

• The junction capacitances and the transit time


of charge carriers through the semiconductor
material limit the high frequency performance
of transistors.
• This limitation is expressed as a cutoff
frequency
• It is the frequency at which the transistor
current gain falls to 0.707 of its gain at low and
medium frequencies.

20-09-2023 EE1003E 31
• The Miller effect describes a situation where the
BJT
capacitance between the input and output of an
Miller Effect amplifier appears as a larger capacitance at the input.

20-09-2023 EE1003E 32
BJT
Miller Effect
Groundwork

20-09-2023 EE1003E 33
BJT
Miller Effect

20-09-2023 EE1003E 34
BJT Miller Effect

• As most amplifiers are inverting, the effective input


capacitance is increased due to the Miller effect.
• This can reduce the bandwidth of the amplifier, restricting
its range of operation to lower frequencies.

• Miller effect occurs in amplifiers with 180° phase shift between input and output.
• Consequently, it occurs with CE circuits, but not with CB and emitter follower and circuits.

20-09-2023 EE1003E 35
• No resistor in the collector of Q1,
keeping the collector voltage fixed
• There is no Miller effect in Q2
since its base is grounded

BJT
Miller Effect

20-09-2023 EE1003E 36
BJT
Exercise

20-09-2023 EE1003E 37

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