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Chapter 3 Problems

teristics revealed several deviations from the ideal. For a Si diode main- tained at room temperature, the deviations included reverse-bias breakdown, excess current levels under small forward bias and all reverse biases, and a reduced I — slope or slope- over at forward biases approaching Vi. Breakdown was associated with avalanching or the Zener process, the excess current with thermal carrier recombi

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4 views10 pages

Chapter 3 Problems

teristics revealed several deviations from the ideal. For a Si diode main- tained at room temperature, the deviations included reverse-bias breakdown, excess current levels under small forward bias and all reverse biases, and a reduced I — slope or slope- over at forward biases approaching Vi. Breakdown was associated with avalanching or the Zener process, the excess current with thermal carrier recombi

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e54096023
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© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF or read online on Scribd
‘CARRIER ACTION 317] 344 | 1 (6 Diff. Eq., no R-G region 3.18 i 2 | 12axe-2,0-6) Diff. Bq, mysterious ray 3.19 a 2/8 Diff. Eq., G. > Gi! 3.20 ai 2-3 [10 Diff. Eq. light + edge R 320 é 3 [15 (aud-2,6-7) | Diff. Bq., double-ended 322 zs 3-4 | 15 (aie-2,69) | Diff. Eq, half-illuminated 323 E 2 4,62) [CaS Photoconductor [324 | 352 2 | 12 (@2,b-4, cxe-2) | Quasi-Fermi levels 3.25 E 34 [5 ‘Quasi-Fermi levels 03.26 : 3-4 [15 13,62) Plot quasi-Fermi levels 3.1 Using the energy band diagram, indicate how one visualizes {a) The existence of an electric field inside a semiconductor. (©) Anclectron with a KE. (©) AbolewithaKE.= Bold. (2) Photogener: (6) Direct thermal generation. () Band-to-band recombination. (@ Recombination via R~G centers. (%) Generation via R-G cemters. 3.2 Short Answer (@) An average hole drift velocity of 10° cm/sec results when 2 V is applied across a 1-em-long semiconductor bar. What isthe hole mobility inside the bar? (&) Name the two dominant carrier scattering mechanisms in nondegenerately doped semiconductors of device quality. (©) Fora given semiconductor the carier mobilities in intrinsic material ar (choose one: higher than, lower than, the same as) those in heavily doped material. Briefly exp! ‘hy the mobilities in inttinsic material are (chosen answer) those in heavily doped materia (@ Two GeAs wafers, one mtype and one p-type, are uniformly doped such that Nolwater 1) = N, (wafer 2) > nj. Which wafer will exhibit the larger resistivity? Explain. ww 140 SSERICONOUCTOR FUNDANENTALS (©) The electron mobility ina silicon sample is determined to be 1300 em*/V-see at oom temperature. What isthe electron diffusion coefficient? (6) What isthe algebraic statement of low-level injection? (@) Light is used to create excess carriers in silicon, These excess carriers will pre- dominantly recombine via (choose one: band-to-band, R-G center, or photo) re- combination. (h) Prior to processing, a silicon sample contains Ny = 10"/em* donors and Np = 10"/ ‘em? RG centers. Afler processing (say in the fabrication of a device), the sample ‘contains Nj = 10"7/em? donors and Ny ~ 10'8/em R~G centers. Did processing in- crease or decrease the minority carrier lifetime? Explain, ©3.3 Complete part (b) of Exercise 3.1. #34 (a) (Optional) Read the Experiment No. 7 Introduction and Measurement System description in R. F. Pierre, Semiconductor Measurement Laboratory Operations Maral, Supplement A, in the Modular Series on Solid State Devices, Addison-Wesley Publishing Co., Reading, MA, © 1991 {(b) The measurement described in the part (a) reference is used to determine the mobility in an Ny < 10!/em' Si sample as a function of temperature from roughly room tem- perature to T= 150 K. Representative , versus 7 (KK) data derived by undergraduate students is tabulated in the following table. Assuming y1, % T-¥ [or In(it,) = con- stant ~ b In(T)] can be fitted to the data, use the MATLAB poly fit function or an equivalent least squares fit to determine the best fit value of the power factor b. Draw the fit line and note the b-ft value on a log-log plot ofthe data, (©) Compare your part (b) result with Fig. 3.7(a). Ist significant that the experimental data ‘was derived from a lavily doped sample? Is the experimentally derived b-value consis- tent with the b-value noted on the text plot? Are the measured mobility values ofthe proper magnitude? es Wom po (3) with = 10M, he right y~ 9 A, ih he “bes te da, ‘lava yatta pe agen opal Ey, ~ 23) wi po MEn = Eats, _) Way = Gy {Al summations are from i = 160 N The “best fe” erterion leading wo the expressions fr and the square of the difference between the datapoints andthe fited line is minimized, hence the name spare TO) | male) 230 1501 280 1646 270 1805 260 1985 250 2185, 240 ais 230 2675 220 2018 210 3306 200 3743 190 4209 | 180 4619 170 5216 160 5910 130 6751 3.5. Intrinsic and Maximum Resistivity (a) Determine the resistivity of intrinsic Ge, Si, and GaAs at 300 K. (b) Determine the maximum possible resistivity of Ge, Si, and GaAs at 300 K. 3.6 More Resistivity Questions (a) A silicon sample maintained at room temperature is uniformly doped with Np = 10!/ ccm? donors. Calculate the resistivity of the sample using Eq. (3.88). Compare your calculated result with the p deduced from Fig. 3.8(a). (b) The silicon sample of part (a) is “compensated” by adding Ny = 10!S/em? acceptors. Calculate the resistivity of the compensated sample. (Exercise caution in choosing the ‘mobility values to be employed in this part of the problem.) (©) Compute the resistivity of intrinsic (N, = 0, Np = 0) silicon at room temperature How does your result here compare with that for part (b)? 142 SEMICONDUCTOR FUNDAMENTALS (@) A 500-ohm resistor isto be made from a bar-shaped piece of n-type Si. The bar has a ‘cross-sectional area of 10"? cm? and a current-carrying length of | em, Determine the doping required. (©) A lightly doped (Np < 10%/em?) Si sample is heated up from room temperature to 100°C. N, ® n, at both room temperature and 100°C. Is the resistivity of the sample expecied to increase or decrease? Explain. © 3.7 Making use of the mobility ft relationships and parameters quoted construct a plot of the silicon resistivity versus impurity concentration at T clude eurves for both n- and p-type silicon over the range 10'%/em? = Ny or No = 103/ ‘em, Compare your result with Fig. 3.8(2). 38 Resistors in ICs are sometimes thin semiconductor layers near the surface of a wafer. ‘However, formation of the layer by diffusion or ion implantation (discussed in Chapter 4) is likely (0 give rise to a doping concentration that varies with depth into the layer. Let us ‘examine how the resistance is computed when the doping varies with depth. (a) Given a bar-shaped layer of width W, length Z, and depth d, and assuming an arbitrary ‘Np(x) variation with the depth x from the wafer surface, show that the resistance of the layer is to be computed from L 1 ret /_ ” inert © (b) Taking Np(2) = Npgexp(~ ax) + Npg. compute and plot versus Npp for 10"*/em® = Npp = 10!%em* when L = W, Nog = 10!*/em?, d= 5 um, and a= 1 pm. ‘© 3.9 (a) Modify your versus T program from Problem 3.3 to compute and construct semi- log plots of p (log scale) versus T for 200 K = T = 00 K and Np of Na stepped in decade values from 10'4/cm* to 10!¥/em?, [NOTE: The lower doping curves are in ‘error atthe higher temperatures if Eqs. (3.8) are used to compute p. Can you explain ‘why? Assuming Eqs. (3.8) were used in the computation, how must the p versus T program be modified to correct the error?) (©) Compare your n-type plot 7 in Li and Thurber, Soli {609 (1977). Compare your p-type plot with Fig. 7 in Li, S 1109 (1978). Comment on the comparisons. State Electonics, 20, State Electronies, 21, 3.10 Your boss asks you to construct a temperature sensor for measuring the ambient out- sie temperature in W. Lafayette IN (—30°C < T= 40°C). You decide to base operation of the temperature sensor on the change in resistance associated with a bar-shaped piece ofSi. (@) Restricting yourself to nondegenerate dopings and reasonable device dimensions, and also requiring the resistance to be readily measured with a hand-held multimeter (say 1.0 R= 1000.0), indicate the doping and éimensions of your sensor ‘CARRIER ACTION (b) Derive an expression forthe sensitivity (dR/dT in 01°C) of your sensor over the oper- ating temperature range. Relative to sensitivity, is it preferable to use low or high dop- ings? Explain (©) What are the upper and lower temperature limits of operation of your sensor (approxi- mately)? Explain. © (@) Plot versus T of your sensor over the required temperature range of operation. 3.11 Thermal energy alone was noted to contribute to relatively high carrier velocities inside of a semiconductor. Considering a nondegenerate semiconductor maintained at room temperature, compute the thermal velocity of electrons having a kinetic energy correspond- ing to the peak of the electron distribution inthe conduction band. Set m* = ing in perform- ing_your calculation. (This problem assumes the prior working of either Problem 2.7 ‘or Problem 2.8.) 3.12 Interpretation of Energy Band Diagrams Six different siticon samples maintained ot 300 K are characterized by the energy band diagrams in Fig. P3.12. Answer the questions that follow after choosing a specifi diagram, or analysis, Possibly repeat using other energy band diagrams, (Excessive repetitions have been known to lead to the onset of insanity.) (@) Do equilibrium conditions prevail? How do you know? (b) Sketch the electrostatic potential (V) inside the semiconductor as a function of x. (©) Sketch the electric field (@) inside the semiconductor as a function of x. (@) ‘The cartier pictured on the diagram moves back and forth between x =O and x= L, ‘without changing its total energy. Sketch the KE, and PE. of the carrier as a function ‘of position inside the semiconductor. Let E, be the energy reference level. (©) Roughly sketch m and p versus x. (£) On the same set of coordinates, make a rough sketch of the electron drift-current den- sity (yaaa) and the electron diffusion-current density (Jy gq) inside the Si sample as 1 function of position. Be sure to graph the proper polarity of the current densities at all points and clearly identify your two current components. Also briefly explain how ‘you arrived at your sketch 3.13 The nonuniform doping in the central region of bipolar junction transistors (BITS) Creates a built-in field that assists minority carriers across the region and increases the maximum operating speed of the device. Suppose the BIT is @ Si device maintained under ‘equilibrium conditions at room temperature with a central region of length L. Moreover, the nonuniform acceptor doping is such that PO) = NAG) = mem, OS eS where a= 1.8 wim, b = 0.1 pm, and L = 0.8 wm. (@) Draw the energy band diagram for the O = x = L region specifically showing E., Ey. ,,and £, on your diagram. Explain how you arrived at your diagram. 1a 144 SEMICONDUCTOR FUNDAMENTALS ° L 0 uw wn MH ok @ o 0 wn & 0 Ws wn mK OL © ) Figure P3.12 ‘CARRIER ACTION (b) Make a sketch of the & -field inside the region as a function of position, and compute. the value of € at x= L/2. (©) Is the built-in electric field such as to aid the motion of minority cartier electrons in going from x = Oto x = L? Explain. 3.14 (a) Based on information found in the text proper, roughly skeich the expected varia- tion of Dy and Dp versus doping appropriate for 10"/em* = N, or No = 10!¥/em? doped Si maintained at 7 = 300 K. Explain how you arrived atthe form of your sketch. © (0)._Making use of the fit relationships and parameters quoted in Exercise 3.1, construct a plot of Dy and Dp versus Ny oF Mp for 10M/em? = Nx o Np = 10'8/em? doped Si maintained at T= 300 K. (©). Why was the upper doping limit taken to be 10"*/em? in the part (6) computation? BUS Taking & = E, so that n; p, & 1, setting An = Ap, and assuming +, is eompa- rable to 7), show that the general-case R-G relationship of Eq. (3.35) reduces to the special-case relationships of Eqs. (3.34) when one has low-level injection in a specific ‘material type. 3.16 aAn,/o1 = DydAn,/0x2 —An,/r, + G,is known as the minority carrier diffusion equation for electrons. (@) Why is itcalled a difsion equation? (0) Why is itroferred to asa minority carrier equation? (6) The equation is valid only under low-level injection conditions. Why? 3.17 Show that, under steady state conditions 4p.) = Spgo(l — xl). OS SL is the special-case solution of the minority cartier diffusion equation that will result if (1) one assumes ail recombination~generation processes are negligible within an n-type semiconductor of length L, and (2) one employs the boundary conditions p,(0) = Aya and Ap,(L) = 0. (Neglecting recombination—generation is an excellent approximation ‘when Lis much less than a minority carrier diffusion length. A p(x) solution ofthe above ‘ype is frequently encountered in practical problems.) 3.18 Tac earth is hit by a mysterious ray that momentarily wipes out all minority carriers. Majority carriers are unaffected. Initially in equilibrium and not affected by room light, a uniformly doped silicon wafer sitting on your desk is struck by the ray at time 1 = 0. The wafer doping is N, = 10'S/em!, x, = 10~® see, and 7 = 300 K. (a) What is An at ¢ = 079 (f = O* is an imperceptible fraction of a second after 1 = 0.) (©) Does generation or recombination dominate at ‘= 0*? Explain, (©) Do low-level injection conditions exist inside the wafer at = 0*? Explain. (@ Starting from the appropriate differential equation, derive An (0) for £> 0. 145: 146 ‘SEMICONDUCTOR FUNDAMENTALS. 349 A silicon wafer (Ny, = 10!/om’, +, = 1 sec, T= room temperature) is first ilumi- nated fora time ¢ > 1, with light which generates Gyy = 10'® electron-hole pairs per ern'- see uniformly throughout the volume of the silicon. At time ¢ = 0 the light intensity is reduced, making Gy = Gig/2 for t = 0. Determine An, (1) for t= 0. 3.20 A semi-infinite p-type bar (see Fig. P3.20) is illuminated with light which generates G, electron-hole pairs per cm?-sec uniformly throughout the volume of the semiconductor. ‘Simultancously, carriers are extracted at x = 0 making An, = 0 at x = 0. Assuming a steady state condition has been established end An(x) < pq forall x, determine An, (1). Light Figure P3.20 3.21 The two ends of a uniformly doped n-type Si bar of length L are simultaneously illuminated so as to create yNo excess holes at both x = Oand x = L (see Fig. P3.21). The ‘wavelength and intensity ofthe illamination are such that no light penetrates into the inte- rior (0 < x < L) of the bar and-y = 10-3, Also, steady state conditions prevail, T = 300 K, and No > My {nomena AS Si n-type Mt AY |_ Gotiewo 0 region of the bar. G, = 0 for x <0, steady state conditions prevail, the semiconductor is silicon, the entire bar is uniformly doped with Np = 10!¥/cm’, 7, _ 388888 | 7 0 Figure P3.22 (@) Whats the hole concentration at x = ~2°? Explain (©) Whats the bole concentration at x = +2? Explain. (©) Do low-level injection conditions prevail? Explain. (@ Determine Apy (2) forall x NOTE: (1) Separate &.p,(x) expressions apply for x > O and x <0, (@) Both Ap, and dp,/dx must be continous at x = 0. 3.23 CiS is the most widely used material for constructing commercial photoconduetors ‘operating in the visible portion ofthe spectrum. The CaS photoconductor has a high sen- sitivity and its spectral response closely matches that ofthe human eye. A model VT333 CéS Photoconduetoris pictured in Fig. P3.23. Figure P3.23 (a) Speculate why the conducting film has a snake-Hike pattern, (8) The VT333 resistor pattern is approximately 0.3 mm wide and 3 cm long. Estimating the deposited CaS film to be 5 jam thick, Np) = 10"¥/em® > n,, and #4, = 100 cml ‘V-sec, compute the dark resistance of the device. (©) The VT333 exhibited a 250 Q resistance when illuminated with a microscope light. Can the usual relationships be used to determine the Gy, required to produce the cited resistance? Explain. 148, ‘SEMICONDUCTOR FUNDAMENTALS. 3.24 The equilibrium and steady state conditions before and after illumination of a semi= conductor are characterized by the energy band diagrams shown in Fig, P3.24, T= 300 K, 2, = 10!fem?, jy = 1345 m7 V-see, and 4, = 458 em?/V-sec. From the information provided, determine (@) ng and po, the equilibrium carrier concentrations. (b) n and p under steady state conditions. (©) Np. (@) Do we have “low-level injection” when the semiconductor is illuminated? Explai (©) What is the resistivity of the semiconductor before and after illumination? osev a3ibev osev (2) Before 0) After Figure P3.24 3.25 A portion (0 = x= L) of a Si sample, uniformly doped with Np = 10!5/em? donors and maintained at room temperature, is subject to a steady state perturbation such that n= Np p= n(l = x/L) + mINy tea=4) Since n = Np, itis reasonable to assume $ ~ 0 in the 0 = x = L region. Given € = 0, sketch the energy band diagram for the perturbed region specifically including E., E,, F,, Fyy and Fy on your diagram, 3.26 (a) Write a MATLAB (computer) program that automatically plots Fy and Fp versus x for the experimental situation first considered in Sample Problem No. 2 and further analyzed in Exercise 3.5. Assume a Si sample maintained at 300 K with 7, = 10-6 the program, take Ny and Apap to be input variables. Scale the x-axis Units with (2/Lpyax = In{OOAPyg/Po) Scale the y-axis in kT units plotting (Fy E, kT and (Fp ~ E, VAT. Set pin = ~ 5 ANG Ygns = 45. Kdemtify the positions of E, and E, on your plot. (@) Run your program with No = 10!S/em? and Ay) = 10"fem?. Compare the resultant plot with the corresponding diagram sketched in Exercise 3.5, (©) Remembering the assumed low-level injection requires Apyy < No, try running your program using different values of Np and Ap,y-

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