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PHYSICS CHAPTER - WISE FORMULAS FOR CLASS XII

[Link] Charges and Fields - 15. Relation between fields: Eaxial= 2Eeq
1. Quantization of charge: 16. Gauss’s Law:
q = ±ne, n = 1, 2, 3, ... ∮E·dS = q/ϵ₀
2. 1 Coulomb = 6.25 × 1018 electrons 17. Charge at centre of cube:
3. Additivity of charges: ΦE = (⅙)q / ϵ₀
q = q1 + q2 + q3 + ... 18. Charge at corner of cube:
4. Coulomb’s Law: ΦE = (1/24)q /ϵ₀
F = (1 / 4πϵ₀) (q1 q2/ r²) 19. Charge at centre of hemispherical shell:
k = 1 / 4πϵ₀ = 9 × 10⁹ N·m²/C² ΦE = (½)q / ϵ₀
ϵ₀ = 8.85 × 10⁻¹² C²/N·m² 20. Flux through closed surface in uniform
If q1 q2 > 0 → Like charges field:
If q1 q2 < 0 → Unlike charges ΦE = 0
5. Mass of electron: Applications of Gauss’s Law:
mₑ = 9.1 × 10⁻³¹ kg (i) Field due to infinitely long straight
6. Electric Field Intensity: uniformly charged wire:
E = F/q F = Eq E =λ / 2πϵ₀r
W = Eq (ii) Field due to uniformly charged infinite
7. Electric field due to a point charge: plane sheet:
E = (1 / 4πϵ₀) (q / r²) E = σ / 2ϵ₀
8. Electric Flux: (iii) Field due to the uniformly thin spherical
ΦE = E·ΔS = EΔS cosθ shell:
ΦE = ∮E·dS a. Ele. field outside the shell
9. Electric Dipole: E=(1 / 4πϵ₀) (q / r2)
p = q × 2a = q × 2l b. Ele. field on the shell,
(i) Field at axial line: E=(1 / 4πϵ₀) (q / R2)
Eaxial = (1 / 4πϵ₀) (2p / (r² - a²)3/2) c. Ele field in side the shell , E=0
(ii) Field at equatorial line:
Eeq = (1 / 4πϵ₀) (p / (r² + a²)3/2) [Link] Potential and Capacitance
(iii) For short dipole: 1. Work done by electric force
Eax = (1 / 4πϵ₀) (2p / r³) W = ∫ F · dr
Eeq = (1 / 4πϵ₀) (p / r³) 2. Electric potential:V = W / q
10. Torque on dipole: 3. Electric potential difference: VA− VB = W / q
τ = p × E = pE sinθ 4. Potential due to a point charge (isolated
11. Potential Energy of dipole: charge):
U = -p · E = -pE cosθ V = (1 / 4πϵ₀) (q / r)
For 5. Electric potential due to dipole on axial line:
Stable equilibrium: θ = 0°, Umin = -pE Vaxial = (1 / 4πϵ₀) (p cosθ / r²)
Neutral equilibrium: θ = 90°, U = 0 6. Electric potential due to dipole on equatorial
Unstable equilibrium: θ = 180°, Umax = +pE line: Veq = 0
12. Linear charge density: Note:
λ = q/L → dq = λ dl For a point charge: V ∝ 1/r
13. Surface charge density: For a dipole: V ∝ 1/r²
σ = q/A → dq = σ dS 7. Continuous charge distribution:
14. Volume charge density: V = (1 / 4πϵ₀) ∫ (dq / r)
ρ = q/V → dq = ρ Dv (i) Along a line: V = (1 / 4πϵ₀r) ∫ λ dl
(ii) Over an area: V = (1 / 4πϵ₀r) ∫ σ dS
(iii) Inside a volume: V = (1 / 4πϵ₀r) ∫ ρ dV
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8. For a uniformly charged spherical shell: 3. Ohm’s Law: V = IR

(i) Inside shell (r < R): 4. Drift speed:
V = (1 / 4πϵ₀) (q / R) vd = I / (neA)=aτ=(F/m)τvd = eEτ / m
(ii) On the shell (r = R): 5. Resistance:
V = (1 / 4πϵ₀) (q / R) R = V/I = ρL/A=l/σA
(iii) Outside shell (r > R): 6. Conductance:
V = (1 / 4πϵ₀) (q / r) G = 1/R
9. Relation between electric field and potential: 7. Resistivity:
dV = −E · dr or V = − ∫ E · dr ρ = RA/L
10. Electric field in terms of potential: 8. Conductivity:
E = − dV/dr =V/d σ = 1/ρ = ne²τ/m
11. Electrostatic potential energy: 9. Current density:
U = (1 / 4πϵ₀) (q₁ q₂ / r) J = I/A = σE = ne vd
12. Potential energy of three point charge 10. Mobility:
system: μ = vd/E = eτ/m
U = (1 / 4πϵ₀) [ (q₁q₂ / r₁₂) + (q₁q₃ / r₁₃) 11. Temperature coefficient of resistivity:
+(q₂q₃ / r₂₃) ] α = (ρ - ρ₀) / (ρ₀ (T - T₀))
13. Inside a conductor: 12. Resistors in series:
Q=0,E = 0 then V = constant Rs = R₁ + R₂ + R₃ + ...
14. Capacitance: C = Q / V Current is constant.
15. Capacitance of parallel plate capacitor: For n identical resistors:
C₀ = (Aϵ₀) / d Rs = nR
16. With dielectric slab of thickness ‘t ‘ placed 13. Resistors in parallel:
between plates: 1/Rp = 1/R₁ + 1/R₂ + 1/R₃ + ...
C = (Aϵ₀) / [d − t(1 − 1/K)] Voltage is constant.
If slab completely fills gap (t = d): For n identical resistors:
C = (K Aϵ₀) / d Rp= R/n
17. Relative permittivity: 14. Electric power:
ϵr = ϵ / ϵ₀ = C / C₀ = V₀ / V P = VI = V²/R = I²R
18. Capacitors in series: 15. 1 kWh = 3.6 × 10⁶ J
1/Cs = 1/C1 + 1/C2 + 1/C3 + ... 1 kW = 10³ W
For n identical capacitors: 16. Electrical energy:
Cs= C/n E = W = VIt=p×t
19. Capacitors in parallel: 17. Internal resistance of a cell:
Cp = C1 + C2 + C3 + ... V = E - Ir
For n identical capacitors: r = (E - V)/I
Cp = n C for ideal cell r=0
20. Energy stored in a capacitor : 18. Cells in series:
U=Q2/2c=1/2 CV2=1/2QV Eeq = E₁ + E₂ + ... + En
[Link] stored per unit volume of a parallel req= r₁ + r₂ + ... + rn
plate capacitor U=½ ϵ₀E2=½ϵ₀ v2/d2 For n identical cells:
Eeq = nE
Ch 3: Current Electricity req = nr
1. Electric current: I = nE / (R + nr)
I = Q/t = ne/t = neA vd=nef 19. Cells in parallel:
2. Average and instantaneous current: Eeq = (E₁/r₁ + E₂/r₂ + ... ) / (1/r₁ + 1/r₂ + ...)
I_avg = ΔQ/Δt 1/req = 1/r₁ + 1/r₂ + ...
I_inst = dQ/dt For n identical cells:
Q = ∫ I dt Eeq = E
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req= r/n 11. Force on Moving Charge

I = nE / (nR + r) F = qvB sinθ
NOTE: 12. Fleming’s Left Hand Rule
i. When no current flows through the cell: Thumb → Force (F)
V= E Forefinger → Magnetic Field (B)
ii. When current flows from +ve to -ve terminal Middle Finger → Current (I)
inside the cell (Charging of cell): •1gauss=10-4 tesla
V= E + Ir 13. Velocity Selector , v = E / B
iii. When current flows from -ve to +ve 14. Force on Current Carrying Conductor
terminal inside the cell (Discharging of cell): F = I (L × B) = I L B sinθ
V= E - Ir 15. Motion in Magnetic Field
20. Wheatstone Bridge: Radius: r = mv / qB
P/Q = R/S Frequency: f = qB / 2πm
Bridge is most sensitive when P = Q and R = S Time Period: T = 2πm / qB
21. Meter Bridge: 16. Force Between Two Parallel Currents
S = ((100 - l) / l) R F/L = (μ₀/4π) (2I₁I₂ / d)
22. Potentiometer: 17. Torque on Rectangular Current Loop
E₁ / E₂ = l₁ / l₂ τ = N I A B sinθ
23. Potential Gradient: τ=m×B
k=V/l 18. Magnetic Moment
m=NIA
Ch-04: Moving Charges & Magnetism 19. Magnetic Field due to Magnetic Dipole
1. Biot–Savart Law Axial: B = (μ₀/4π) (2m / r³)
dB = (μ₀/4π) (I dl sinθ / r²) Equatorial: B = (μ₀/4π) (m / r³)
Where μ₀/4π=10-7 wb/Am 20. Moving Coil Galvanometer
When θ = 0° or 180°, dB = 0 Current sensitivity: I_s = θ/I = NBA / k
2. Speed of Light in a Medium Voltage sensitivity: V_s = θ/V = NBA / kR
v = 1/√(με)=3×208m/s Galvanometer constant: G = I/θ
3. Magnetic Field due to Straight Conductor 21. Conversion of Galvanometer
B = (μ₀ I / 4πa) (sinθ₁ + sinθ₂) Into Ammeter:
For infinite wire: B = μ₀ I / 2πa Shunt S = (Ig G) / (I − Ig)
Near one end : B= μ₀ I / 4πa Ammeter resistance RA= G S / (G + S)
4. Magnetic Field at Centre of Circular Loop Into Voltmeter:
B = μ₀ N I / 2R R = V/Ig − G
For semicircle: B = μ₀ I / 4R Voltmeter resistance Rv= G + R
5. Magnetic Field on Axis of Circular Loop
B = (μ₀/4π) (2πR² I / (R² + x²)3/2) Ch-05 : Magnetism and matter
At centre (x = 0): B = μ₀ I / 2R Magnetic dipole moment: m = (q / 2m) L
6. Ampere’s Circuital Law Bohr magneton: μB = eh / (2πm)
∮B·dl = μ₀ I Gauss’s law in magnetism: ∮ B · dS = 0
7. Magnetic Field due to Solenoid Magnetisation: M = m / V
B = μ₀ n I Magnetic susceptibility: χm = M / H
8. Magnetic Field due to Moving Charge Magnetic field intensity: H = B/μ0 − M
B = (μ₀/4π) (q(v × r) / r²) Magnetic permeability: μ = B / H
9. Magnetic Field due to Current Arc Relative permeability: μr= B/B0 = μ/μ0
B = (μ₀/4π) (I/R) × θ Relation: μr= 1 + χm
10. Lorentz Force Curie’s Law: χm ∝ 1/T
F = qE + q(v × B) Curie–Weiss Law: χm = C / (T − Tc)
Diamagnetic substances: χ < 0, μr < 1
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Paramagnetic substances: χ > 0, μr > 1 •Wattless current=Irmssinφ

Ferromagnetic substances: χ > 0, μr >> 1 11. Transformer:
[Link]/Vp= Ip/Is=Ns/Np
Ch – 06 : Electromagnetic Induction ii. Efficiency η = (Pout/Pin) × 100%
1. Magnetic Flux: Φ = BA cosθ ; Φ = ∫B·dA
Induced current: I = ε/R Ch – 08: Electromagnetic Waves
2. Faraday’s Law: ε = -N dΦ/dt ; ε = N(Φ2 - 1. Displacement Current: Id = εo dΦ/dt
Φ1)/t 2. Maxwell’s Equations:
3. Motional emf: ε = BLv (i) Gauss’s law (Electrostatics): ∮E·dS = q/ε0
4. Induced emf across a rotating rod: ε = (ii) Gauss’s law (Magnetism): ∮B·dA = 0
(BωL²)/2 (iii) Faraday’s law: e=-dΦ/dt or
5. Self Inductance: L = Φ/I ; ε = -L dI/dt ∮E·dl = -d/dt ∫B·dS
6. Mutual Inductance: M = Φs/Ip ; εs = -M (iv) Ampere-Maxwell law:
dIp/dt ∮B·dl = μo (I + εo dΦ/dt)
7. Self inductance of long solenoid:L = μ0 N²A/ l 3. Speed of EM waves: c = 1/√(μoεo)
8. Energy stored in a coil: U = (1/2) L I² 4. Total average energy density: u = (1/2)εoEo²
9. Induced emf in generator: ε = NABω sinωt = Bo²/(2μo)

Ch – 07: Alternating Current Ch - 9: Ray Optics & Optical

1. AC Voltage: V = V0 sinωt Instruments
2. AC Current: I = I0 sinωt 1. Ray Optics Basics
3. Mean values: Imean = 2I0/π ; Vmean = 2Vo/π • Refractive index (μ or n)= c / v
4. RMS values: Irms = Io/√2 ; Vrms = Vo/√2 •f=R/2
5. AC applied to Resistor: • Power of lens: P = 1/f (in metre) = 100/f (in
V = Vo sinωt ; I = Iosinωt cm)
Vrms = Irms R ; Pavg = Irms²R = Vrms²/R ; Phase • Mirror formula: 1/f = 1/v + 1/u
diff = 0 f = uv / (u + v)
6. AC applied to Inductor: • Magnification (mirror): m = −v/u = hᵢ/h₀
V = Vo sinωt ; I = Iosin(ωt-π/2) m > 0 → virtual & erect
XL = ωL ; Phase diff = π/2 ; Pavg = 0 m < 0 → real & inverted
7. AC applied to Capacitor: |m| < 1 → diminished
V = Vo sinωt ; I = Iosin(ωt+π/2) |m| = 1 → same size
XC = 1/ωC ; Phase diff = -π/2 ; Pavg = 0 |m| > 1 → enlarged
8. Series LCR Circuit: •n21=n2/n1=v1/v2
i .When XC>XL then V = Vo sin(ωt-φ) ; • Snell’s law: n₁ sin i = n₂ sin r
I = Iosinωt • Lateral displacement: t = (t sin(i − r)) / cos r
[Link] XC=XL then V = Vo sinωt ; •A.D.=R.D./n
I = Iosinωt •shift=R.D.(1-1/n)
[Link] XC<XL then V = Vo sin(ωt+φ) ; • Critical angle: sin C = 1/n
I = Iosinωt •n2/v- n1/u=n2-n1/R for curved surface
•Impedance : Z = √[R² + (XL - XC)²] •n2/v-=n1/u for plane surface
•At resonance: Z = R ; φ = 0 Typical values:
• Io = Vo / Z Air → n= 1, v = 3×10⁸ m/s
•Phase angle :tanφ = (XL - XC)/R Water → n= 1.33, C ≈ 48.8°
• Resonant frequency: f = 1/(2π√LC) Glass → n= 1.5, C ≈ 42°
9. Quality Factor: Q = 1/R(√L/C)=ωL/R = Diamond → n = 2.42, C ≈ 24.4°
1/(ωCR) 2. Lenses
10. Power in AC: Pavg = Vrms Irms cosφ (cosφ • Lens formula: 1/f = 1/v − 1/u
= power factor)
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f = vu / (u − v) 2. Resultant amplitude:
• Magnification (lens): m = v/u = hᵢ/h₀ = A = √(a₁² + a₂² + 2a₁a₂ cosφ)
f/(u+f)=f-v/f) 3. Conditions:
• Lens maker’s formula: (a) Constructive interference:
1/f = (n − 1)(1/R₁ − 1/R₂) phase diff φ = 2nπ
R₁ positive, R₂ negative for convex lens (sign Path difference = nλ
convention) max. Amplitude = a + b
• Power: P = 1/f (metre) (b) Destructive interference:
• Combination of lenses: φ = (2n − 1)π
1/f = 1/f₁ + 1/f₂ + 1/f₃ + ... Path difference = (2n − 1)λ/2
P = P₁ + P₂ + P₃ + ... min Amplitude = |a − b|
m = m₁ × m₂ × m₃ × … 4. Intensity:
3. Prism I = I₁ + I₂ + 2√(I₁I₂) cosφ
• A = r₁ + r₂ Imax = 4I₀ (when I₁ = I₂ = I₀)
•δ=i+e−A Imin = 0
• μ = sin((A + δ)/2) / sin(A/2) Inet = 4I₀ cos²(φ/2)
• For thin prism (A small): r₁ ≈ r₂ 5. Ratio of intensities:
• Minimum angle of deviation: Imax / Imin = ( (√I₁ + √I₂)² ) / ( (√I₁ − √I₂)² )
Dₘ = (μ − 1)A 6. Young’s Double Slit Experiment (YDSE):
r₁ = r₂ = A/2 (a) Path difference:
• Angular dispersion: θ = (μᵥ − μᵣ)A = xd / D
• Dispersive power: ω = (μᵥ − μᵣ) / (μᵧ − 1) (b) Condition for maxima:
4. Optical Instruments nλ = xd / D
Simple Microscope Position of nth maxima:
• Magnification (image at D): m = 1 + D/f xₙ = nλD / d
• Magnification (image at ∞): m = D/f (c) Condition for minima:
Compound Microscope xd / D = (2n − 1)λ/2
• m₀ = v₀/u₀ (objective magnification) Position of nth minima:
• mₑ = 1 + D/fₑ (eyepiece) xₙ = (2n − 1)λD / (2d)
• Total magnification (image at D): m = m₀ × mₑ 7. Fringe width:
• Total magnification (image at ∞): m = (L/f₀) × β = λD / d
(D/fₑ) 8. Effect of transparent sheet (thickness t,
• Length of microscope: L ≈ v₀ refractive index μ):
Astronomical Telescope Additional path difference =xd/D+ (μ − 1)t
• m (normal adjustment) = −f₀/fₑ (image at ∞) New position of maxima:
• Length L = f₀ + fₑ x = (nλD / d) − ((μ − 1)t D / d)
• For image at D: m = −(f₀/fₑ)(1 + fₑ/D) New position of minima:
Reflecting Telescope x = ((2n − 1)λD / 2d) − ((μ − 1)t D / d)
• m = f₀/fₑ = 2R₀/fₑ 9. Angular position:
(a) Angular position of nth maxima:
Ch-10: Wave Optics θ = nλ / d
1. Phase difference: (b) Angular position of nth minima:
Δφ = (2π/λ) × (path difference) θ = nλ / 2d
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10. Diffraction: 3. Kinetic Energy of electron in orbit:

Condition for nth secondary maxima: KE = e² / (8πϵ₀ r)
a sinθ = (n + 1/2)λ 4. Total Energy of electron:
E = − e² / (8πϵ₀ r)
Position of nth secondary maxima:
5. Radius of orbit:
x = (n + 1/2)λD / a r = e² / (4πϵ₀ m v²)
Interference : 6. Angular momentum:
1. Condition for nth minima: L = mvr = nh / 2π
a sinθ = nλ 7. Energy of emitted photon:
2. Position of nth minima: E = hν = E_i − E_f
y = nλD / a 8. Bohr’s atomic radius:
3. Linear width of central maxima: rn= (n² / Z) (ϵ₀ h² / π m e²)
= 2λD / a For hydrogen (Z=1):
4. Linear width between two successive rn= n² (0.53 Å)
maxima or minima: 9. Orbital velocity of electron:
= λD / a vn= (Z e²) / (2ϵ₀ h n)
10. Kinetic Energy of electron:
Ch-11: Dual Nature of Radiation KE = Ze² / (8πϵ₀ r)
and Matter 11. Potential Energy:
1. Stopping potential: U = − Ze² / (4πϵ₀ r)
V₀ = (Work done) / charge 12. Total Energy of electron:
2. Maximum kinetic energy: Eₙ = − (Z² / n²) (13.6 eV)
Kmax= (1/2) m vmax² 13. Number of spectral lines when electron
3. Einstein’s photoelectric equation: jumps from n₂ to n₁:
Kmax = hν − W₀ or Kmax = hν − hν₀ = (n₂ -n1)(n₂ −n1+ 1) / 2
V₀ =(h/e)ν − W₀/e 14. Wave number:
4. Work function: 1/λ = R [ (1/n₁²) − (1/n₂²) ]
W₀ = hν₀ Lyman series: n₁ = 1, n₂ = 2, 3, 4 ...
5. Energy of photon: Balmer series: n₁ = 2, n₂ = 3, 4, 5 ...
E = hν = hc/λ Paschen series: n₁ = 3, n₂ = 4, 5, 6 ...
6. Intensity: Brackett series: n₁ = 4, n₂ = 5, 6 ...
I = Power/Area = P / 4πr² Pfund series: n₁ = 5, n₂ = 6, 7 ...
7. Momentum of photon: 15. Energy relation:
p = h/λ = E/c= hν/c E = E₁ + E₂
8. Mass of photon: hν = hν₁ + hν₂
m = E/c²
9. Radiation pressure: Ch-13: Nuclei
P = I/c
10. de-Broglie wavelength: 1. Radius of nucleus:
λ = h/p = h/mv R = R₀ A1/3
λ = h/√(2mK.E.) where R₀ = 1.2 × 10⁻¹⁵ m
11. de-Broglie wavelength of electron: 2. Ratio of radii: R₁ / R₂ = (A₁ / A₂)1/3
λ = (12.27 / √V ) A0 3. Density of nucleus: ρ = 3M / (4πR0³)
4. 1 a.m.u = 931.5 MeV
Ch-12: Atoms 5. Mass defect:
1. Distance of closest approach: Δm = [Z mp + (A − Z) mn] − M
r₀ = (1/4πϵ₀) (Ze² / E) 6. Binding energy: Eb = Δm c²
2. Impact parameter: 7. Binding energy per nucleon: = Δm c² / A
b = (1/4πϵ₀) (Ze² / E) cot(θ/2)
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Higher binding energy per nucleon indicates a

more stable nucleus.
8. Mass-energy relation: E = mc²

Ch 14: Semiconductor Electronics

1. In intrinsic semiconductor: nₑ = nₕ = nᵢ
2. Total current: I = Iₑ + Iₕ
3. nᵢ² = nₑ nₕ
4. Dynamic resistance: rd = ΔV / ΔI
5. In p-type semiconductor: nₑ < nₕ
In n-type semiconductor: nₑ > nₕ
6. Ripple factor: r = Iac/ Idc = Vac / Vdc
7. p-n junction diode (symbol)

8. Zener diode (symbol)

9. LED (symbol)

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