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2S (PNP) : Features

The 2SB1375 is a TO-220 PNP transistor with high power dissipation of 25W and a maximum collector-emitter voltage of -60V. It features low saturation voltage of -1.5V at a collector current of -2A and is complementary to the 2SD2012 transistor. Key electrical characteristics include a DC current gain ranging from 15 to 320 and a maximum junction temperature of 150℃.

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5 views2 pages

2S (PNP) : Features

The 2SB1375 is a TO-220 PNP transistor with high power dissipation of 25W and a maximum collector-emitter voltage of -60V. It features low saturation voltage of -1.5V at a collector current of -2A and is complementary to the 2SD2012 transistor. Key electrical characteristics include a DC current gain ranging from 15 to 320 and a maximum junction temperature of 150℃.

Uploaded by

susanna.vardanyan220467
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

2SB1375(PNP)

TO-220 Transistor
TO-220
1. BASE

2. COLLECTOR

3. EMITTER
3
2
1
Features
— High Power Dissipation: PC=25W(TC=25℃)
— Low voltage:VCE(sat)=-1.5V(Max)(IC=-2A,IB=-0.2A)
— Collector metal(Fin)is Coverd with Mold Regin
— Complementary to 2SD2012

MAXIMUM RATINGS (TA=25℃ unless otherwise noted ) Dimensions in inches and (millimeters)

Symbol Parameter Value Units


VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Voltage -60 V
VEBO Emitter-Base Voltage -7 V
IC Collector Current -Continuous -3 A
PC Collector Dissipation 2 W
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55-150 ℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=-100µA,IE=0 -60 V

Collector-emitter breakdown voltage V(BR)CEO IC=-50mA,IB=0 -60 V

Emitter-base breakdown voltage V(BR)EBO IE=-100µA,IC=0 -7 V

Collector cut-off current ICBO VCB=-60V,IE=0 -10 µA

Emitter cut-off current IEBO VEB=-7V,IC=0 -10 µA

hFE(1) VCE=-5V,IC=-0.5A 100 320


DC current gain
hFE(2) VCE=-5V,IC=-2A 15

Collector-emitter saturation voltage VCE(sat) IC=-2A,IB=-0.2A -1.5 V

Base-emitter voltage VBE VCE=-5V,IC=-0.5A -1 V

Transition frequency fT VCE=-5V,IC=-0.5A 9 MHz

Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 50 pF


2SB1375(PNP)
TO-220 Transistor

Typical Characteristics

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