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by BDW42/D
SEMICONDUCTOR TECHNICAL DATA


   "  
 
 !    
 
. . . designed for general purpose and low speed switching applications.
• High DC Current Gain – hFE = 2500 (typ.) @ IC = 5.0 Adc.
• Collector Emitter Sustaining Voltage @ 30 mAdc:
VCEO(sus) = 80 Vdc (min.) — BDW46 *Motorola Preferred Device

VCEO(sus) = 100 Vdc (min.) — BDW42/BDW47

• Low Collector Emitter Saturation Voltage DARLINGTON
VCE(sat) = 2.0 Vdc (max.) @ IC = 5.0 Adc 15 AMPERE

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VCE(sat) = 3.0 Vdc (max.) @ IC = 10.0 Adc COMPLEMENTARY

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
• Monolithic Construction with Built–In Base Emitter Shunt resistors SILICON
• TO–220AB Compact Package POWER TRANSISTORS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 80 – 100 VOLTS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
85 WATTS
MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ BDW42

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Rating Symbol BDW46 BDW47 Unit

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage VCEO 80 100 Vdc

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Base Voltage VCB 80 100 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Voltage VEB 5.0 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current — Continuous IC 15 Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current IB 0.5 Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Total Device Dissipation PD
@ TC = 25_C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
85 Watts
Derate above 25_C 0.68 W/_C CASE 221A–06

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
Operating and Storage Junction TJ, Tstg – 55 to + 150 _C TO–220AB

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Temperature Range

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic Symbol Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Case RθJC 1.47 _C/W

90

80
PD, POWER DISSIPATION (WATTS)

70

60

50
40
30

20

10

0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)

Figure 1. Power Temperature Derating Curve

Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7

3–212
Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
 ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
 

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic Symbol Min Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Emitter Sustaining Voltage (1) VCEO(sus) Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 30 mAdc, IB = 0) BDW46 80 —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
BDW42/BDW47 100 —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current ICEO mAdc
(VCE = 40 Vdc, IB = 0) BDW46 — 2.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCE = 50 Vdc, IB = 0) BDW42/BDW47 — 2.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current ICBO mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCB = 80 Vdc, IE = 0) BDW41/BDW46 — 1.0
(VCB = 100 Vdc, IE = 0) BDW42/BDW47 — 1.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current
ÎÎÎÎ ÎÎÎÎ ÎÎÎ IEBO — 2.0 mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ
(VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain hFE

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 5.0 Adc, VCE = 4.0 Vdc) 1000 —
(IC = 10 Adc, VCE = 4.0 Vdc) 250 —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Saturation Voltage VCE(sat) Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 5.0 Adc, IB = 10 mAdc) — 2.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ
(IC = 10 Adc, IB = 50 mAdc) — 3.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ
Base–Emitter On Voltage VBE(on) — 3.0 Vdc
(IC = 10 Adc, VCE = 4.0 Vdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SECOND BREAKDOWN (2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Second Breakdown Collector IS/b Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current with Base Forward Biased
BDW42 VCE = 28.4 Vdc 3.0 —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ VCE = 40 Vdc 1.2 —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ
BDW46/BDW47 VCE = 22.5 Vdc 3.8 —
VCE = 36 Vdc 1.2 —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Magnitude of common emitter small signal short circuit current transfer ratio fT 4.0 — MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Output Capacitance Cob pF

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) BDW42 — 200
BDW46/BDW47 — 300

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Small–Signal Current Gain hfe 300 —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.
(2) Pulse Test non repetitive: Pulse Width = 250 ms.
5.0
VCC ts
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS – 30 V 3.0
D1 MUST BE FAST RECOVERY TYPES, e.g.:
[
2.0
1N5825 USED ABOVE IB 100 mA
[
MSD6100 USED BELOW IB 100 mA
RC
SCOPE 1.0 tf
t, TIME ( µs)

TUT
0.7
V2 RB
0.5
APPROX
+ 8.0 V
0
51 D1 [
8.0 k [
150
0.3
0.2
tr
VCC = 30 V
V1 + 4.0 V IC/IB = 250
0.1 IB1 = IB2
APPROX 25 µs for td and tr, D1 id disconnected 0.07 TJ = 25°C td @ VBE(off) = 0 V
– 12 V
v
tr, tf 10 ns
and V2 = 0
For NPN test circuit reverse all polarities
0.05
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
DUTY CYCLE = 1.0% IC, COLLECTOR CURRENT (AMP)

Figure 2. Switching Times Test Circuit Figure 3. Switching Times

Motorola Bipolar Power Transistor Device Data 3–213

  
1.0

THERMAL RESISTANCE (NORMALIZED)

0.7 D = 0.5
r(t) EFFECTIVE TRANSIENT 0.5
0.3 0.2
0.2
0.1
P(pk)
0.1 0.05 RθJC(t) = r(t) RθJC
0.07 0.02 RθJC = 1.92°C/W
0.05 D CURVES APPLY FOR POWER
t1 PULSE TRAIN SHOWN
0.03 SINGLE PULSE t2
READ TIME AT t1
0.02 0.01
DUTY CYCLE, D = t1/t2 TJ(pk) – TC = P(pk) RθJC(t)

0.01
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000
t, TIME OR PULSE WIDTH (ms)

Figure 4. Thermal Response

ACTIVE–REGION SAFE OPERATING AREA

50 50
0.1 ms 0.1 ms
20 20
IC, COLLECTOR CURRENT (AMP)

IC, COLLECTOR CURRENT (AMP)

10 TJ = 25°C 10 TJ = 25°C
1.0 ms 1.0 ms
0.5 ms 0.5 ms
5.0 5.0
SECOND BREAKDOWN LIMIT dc SECOND BREAKDOWN LIMIT
2.0 BONDING WIRE LIMIT 2.0 BONDING WIRE LIMIT
dc
1.0 THERMAL LIMITED 1.0 THERMAL LIMITED
@ TC = 25°C (SINGLE PULSE) @ TC = 25°C (SINGLE PULSE)
0.5 0.5

0.2 0.2
0.1 0.1 BDW46
BDW42 BDW47
0.05 0.05
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 5. BDW42 Figure 6. BDW46 and BDW47

There are two limitations on the power handling ability of a down pulse limits are valid for duty cycles to 10% provided
transistor: average junction temperature and second break- TJ(pk) v
200_C. TJ(pk) may be calculated from the data in
down. Safe operating area curves indicate IC – VCE limits of the Fig. 4. At high case temperatures, thermal limitations will re-
transistor that must be observed for reliable operation; i.e., the duce the power that can be handled to values less than the li-
transistor must not be subjected to greater dissipation than the mitations imposed by second breakdown.
curves indicate. The data of Fig. 5 and 6 is based on TJ(pk) = * Linear extrapolation
200_C; TC is variable depending on conditions. Second break-
10,000 300
TJ = + 25°C
hFE, SMALL–SIGNAL CURRENT GAIN

5000
3000 200
2000
C, CAPACITANCE (pF)

1000

500
100 Cob
300 TJ = 25°C
200
VCE = 3.0 V
70 Cib
100 IC = 3.0 A
50 50
30 BDW46, 47 (PNP) BDW46, 47 (PNP)
20 BDW42 (NPN) BDW42 (NPN)
10 30
1.0 2.0 5.0 10 20 50 100 200 500 1000 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
f, FREQUENCY (kHz) VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Small–Signal Current Gain Figure 8. Capacitance

3–214 Motorola Bipolar Power Transistor Device Data

   

BDW40, 41, 42 (NPN) BDW45, 46, 47 (PNP)

20,000 20,000
VCE = 3.0 V VCE = 3.0 V
10,000 10,000
7000
hFE, DC CURRENT GAIN

hFE, DC CURRENT GAIN

5000 TJ = 150°C 5000 TJ = 150°C

3000 3000
2000 2000 25°C
25°C

1000 1000
– 55°C 700 – 55°C
500
500

300 300
200 200
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 9. DC Current Gain
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

3.0 3.0
TJ = 25°C TJ = 25°C

2.6 2.6
IC = 2.0 A 4.0 A 6.0 A IC = 2.0 A 4.0 A 6.0 A

2.2 2.2

1.8 1.8

1.4 1.4

1.0 1.0
0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)
Figure 10. Collector Saturation Region

BDW40, 41, 42 (NPN) BDW45, 46, 47 (PNP)

3.0 3.0
TJ = 25°C TJ = 25°C

2.5 2.5
V, VOLTAGE (VOLTS)

V, VOLTAGE (VOLTS)

2.0 2.0

VBE(sat) @ IC/IB = 250

1.5 1.5 VBE @ VCE = 4.0 V

VBE @ VCE = 4.0 V VBE(sat) @ IC/IB = 250

1.0 1.0
VCE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
0.5 0.5
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)

Figure 11. “On” Voltages

Motorola Bipolar Power Transistor Device Data 3–215

  
+ 5.0 + 5.0

θV, TEMPERATURE COEFFICIENT (mV/ °C)

θV, TEMPERATURE COEFFICIENTS (mV/°C)

+ 4.0
*IC/IB v 250 + 4.0
*IC/IB v 250
+ 3.0 + 3.0
+ 25°C to 150°C
+ 2.0 25°C to 150°C + 2.0
+ 1.0 + 1.0
– 55°C to 25°C
0 0
– 1.0 *θVC for VCE(sat) – 1.0 *θVC for VCE(sat)
– 2.0 – 2.0
25°C to 150°C θVB for VBE – 55°C to + 25°C
– 3.0 θVB for VBE – 3.0 + 25°C to 150°C – 55°C to +25°C
– 4.0 – 55°C to 25°C – 4.0
– 5.0 – 5.0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 12. Temperature Coefficients

105 105
REVERSE FORWARD REVERSE FORWARD
104 104
IC, COLLECTOR CURRENT ( µA)

IC, COLLECTOR CURRENT ( µA)

VCE = 30 V VCE = 30 V
103 103

102 102
TJ = 150°C TJ = 150°C
101 101
100°C
100 100 100°C
25°C
25°C
10– 1 10– 1
+ 0.6 + 0.4 + 0.2 0 – 0.2 – 0.4 – 0.6 – 0.8 – 1.0 – 1.2 – 1.4 – 0.6 – 0.4 – 0.2 0 + 0.2 + 0.4 + 0.6 + 0.8 + 1.0 + 1.2 + 1.4
VBE, BASE–EMITTER VOLTAGE (VOLTS) VBE, BASE–EMITTER VOLTAGE (VOLTS)
Figure 13. Collector Cut–Off Region

NPN COLLECTOR PNP COLLECTOR

BDW42 BDW46
BDW47

BASE BASE

[ 8.0 k [ 60 [ 8.0 k [ 60

EMITTER EMITTER

Figure 14. Darlington Schematic

3–216 Motorola Bipolar Power Transistor Device Data

   
PACKAGE DIMENSIONS

NOTES:
SEATING 1. DIMENSIONING AND TOLERANCING PER ANSI
–T– PLANE
Y14.5M, 1982.
B F C 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
T S BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
4
INCHES MILLIMETERS
A DIM MIN MAX MIN MAX
Q A 0.570 0.620 14.48 15.75
1 2 3 B 0.380 0.405 9.66 10.28
U C 0.160 0.190 4.07 4.82
H D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
K G 0.095 0.105 2.42 2.66
Z H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
L R N 0.190 0.210 4.83 5.33
V Q 0.100 0.120 2.54 3.04
J R 0.080 0.110 2.04 2.79
G S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
D U 0.000 0.050 0.00 1.27
N V 0.045 ––– 1.15 –––
Z ––– 0.080 ––– 2.04

STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR

CASE 221A–06
TO–220AB
ISSUE Y

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*BDW42/D*
◊ Device Data
Motorola Bipolar Power Transistor 3–217
BDW42/D