Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 8

By D. A. Neamen Problem Solutions

______________________________________________________________________________________

Chapter 8
8.1 or
In forward bias  
n p  x p  9.88  10 11 cm 3
 eV  (b) Va  0.55 V,
I f  I S exp 
 kT 
Then 
p n x n   1.125 10 5 exp 
 0.55 

 0.0259 
 eV 
I S exp 1   1.88 1014 cm 3
I f1  kT   e  
  exp  V1  V 2 
I f2  eV 
I S exp 2   kT       0.55 
n p  x p  2.8125 10 4 exp 
 0.0259 
 kT 
or  4.69 1013 cm 3
(c) Va  0.55 V
 kT   I f 1 
V1  V 2    ln
 e   I f 2  
p n x n   1.125 10 5 exp 
  0.55 

(a)  0.0259 
I f1 0
For  10 , then
I f2   
n p  x p  2.8125 10 4 exp 
  0.55 

V1 V2  0.0259 ln 10  0.0259 
0
or
_______________________________________
V1 V 2  59.6 mV  60 mV
(b) 8.3
For
I f1
 100 , then n po 
ni2


1.8 10 6 
2

 8.110 5 cm 3
I f2
Na 4 1016
V1 V2  0.0259 ln 100
or
n2
pno  i 

1.8  10 6  2

 3.24  10 4 cm 3
V1 V2  119.3 mV  120 mV Nd 1016
_______________________________________ (a) Va  0.90 V,

8.2 
p n x n   3.24 10  4 exp 
 0.90 

 0.0259 
n po 
ni2


1.5 10 
10 2
 2.8125 10 4 cm 3  4.0 1011 cm 3
Na 8 1015
n2 
1.5 1010  2    
 0.90 
n p  x p  8.110 5 exp 
p no  i   1.125 10 5 cm 3  0.0259 
Nd 2 1015  10.0 1010 cm 3
V  (b) V a  1.10 V
p n x n   p no exp a 
 Vt  
p n x n   3.24 10  4 exp 
 1.10 

V   0.0259 
 
n p  x p  n po exp a 
 9.03 1014 cm 3
 Vt 
(a) Va  0.45 V,    
 1.10 
n p  x p  8.110 5 exp 
 0.0259 

p n x n   1.125 10 5 exp 
 0.45 

 2.26 1014 cm 3
 0.0259 
(c) p n x n   0
 3.95 1012 cm 3
 
np  xp  0
    0.45 
n p  x p  2.8125 10 4 exp  _______________________________________
 0.0259 
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 8
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

8.4 eD p p no V 
(b) J p x n  
(a) n po 
n 2
i

1.5 10 10 2
 Lp
exp a
 Vt



Na 5 1016
en i2 Dp V 
 4.5 10 3 cm 3   exp a 

Nd  p0  Vt 
n2 1.5 1010   2

p no  i 
Nd 5 1015 
1.6 10 1.8 10 
19 6 2
9.80
10 16
10 8
 4.5 10 4 cm 3
 1.10 
V   exp 
(i) p n x n   p no exp a   0.0259 
 Vt 
 4.521 A/cm 2
 p x  
or Va  Vt ln  n n  
I p  AJ p x n   10 3 4.521 A 
 p no  or I p  4.52 mA
 0.0259 ln 
 0.1 5 1015    (c) I  I n  I p  1.85  4.52  6.37 mA

 4.5 10 
4
_______________________________________
 0.599 V
(ii) n-region - lower doped side 8.6

(b) n po
n2
 i 

1.5 1010  2
For an n  p silicon diode
Na 7 1015 1 Dn
I S  Aeni2 
 3.214  10 4 cm 3 Na  nO

p no 
ni2


1.5 1010  2
10 1.6 10 1.5 10 
4 19 10 2
25
Nd 3 1016 
10 16
10  6
 7.5 10 3 cm 3 or
 0.1N a  I S  1.8 10 15 A
(i) V a  Vt ln  
 n po  (a) For Va  0.5 V,

 0.1 7 1015 
 0.0259 ln 
  V
I D  I S exp a



4 
 3.214 10   Vt 
 0.6165 V

 1.8 10 15 exp 
 0.5 

(ii) p-region - lower doped side  0.0259 
_______________________________________ or
I D  4.36 10 7 A
8.5
V  (b) For Va  0.5 V,
 
eDn n po
(a) J n  x p  exp a 

Ln  Vt   
   0.5  
I D  1.8 10 15 exp   1
en 2
Dn V    0.0259  
 i
 exp a 
 or
Na  no  Vt 
I D   I S  1.8 10 15 A

1.6 10 1.8 10 
19 6 2
205 _______________________________________
5  1016 5  10 8
 1.10 
 exp 
 0.0259 
 1.849 A/cm 2

I n  AJ n  x p   10 3 1.849  A 
or I n  1.85 mA
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 8
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

8.7 8.9
 1 Dn 1 Dp  We have
J s  en i2     V  
 N a  no Nd  p0  I  I S exp   1

  Vt  

 1.6 10 19 2.4 1013  
2
or we can write this as
 1 90 1 48  I V 
 6
   1  exp 
 4  10
15
2  10 2  1017 2  10  6  IS  Vt 
so that
J s  1.568 10 4 A/cm 2
 I 
V  V  Vt ln   1
(a) I  AJ s exp a 
  IS 
 Vt  In reverse bias, I is negative, so at
   0.25 
 10  4 1.568 10  4 exp   I
 0.90 , we have
 0.0259  IS
 2.44 10 4 A V  0.0259  ln 1  0.90
or I  0.244 mA or
(b) I   I s   AJ s   10 4 1.568 10 4    V  59.6 mV
_______________________________________
 1.568 10 8 A
_______________________________________
8.10
V 
8.8 Case 1: I  I s exp a 

 1 Dn 1 Dp   Vt 
(a) J s  en i2   
 N a  no  p0   0.65 
Nd
 0.50 10 3  I s exp 
 0.0259 

 1.6 10 19 1.5 1010  
2

 I s  6.305 10 15 A  6.305 10 12 mA

 1 

25

1 10
 I s 6.305 10 12
7
8  10 8 Js  
 5  10 8  10 15
17
10  A 2 10  4
J s  5.145 10 11 A/cm 2  3.153 10 8 mA/cm 2

I s  AJ s  2 10 4 5.145 10 11   V 
Case 2: I  I s exp a 
 1.029 10 14
A  Vt 
V 
(b) I  I s exp a  
 2 10 12 exp  0.70 

 Vt   0.0259 
or I  1.093 mA
  0.45 
(i) I  1.029 10 14 exp   I 2 10 12
 0.0259  Js  s 
A 110 3
 3.6110 7 A
 2  10 9 mA/cm 2
  0.55 
(ii) I  1.029 10 14 exp   V 
Case 3: I  AJ s exp a 
 0.0259 
 Vt 
 1.72 10 5 A
 I 
  0.65 
(iii) I  1.029 10 14 exp   So Va  Vt ln  
 AJ s 
 0.0259 
 
 8.16 10 4 A  0.0259 ln   4
0.80
_______________________________________ 
 10 10  
7 

Va  0.6502 V
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 8
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

Then 8.12
 
I s  AJ s  10 4 10 7  10 11 mA  The cross-sectional area is
I 10 10 3
Case 4: I s 
I

1.20 A   5 10  4 cm 2
J 20
V   0.72 
exp a 

exp  We have
 Vt   0.0259 
V   0.65 
I s  1.014 10 12 mA J  J S exp D   20  J S exp 
 Vt   0.0259 
I s 1.014 10 12 which yields
A 
Js 2 10 8 J S  2.522 10 10 A/cm 2
 5.07 10 5 cm 2 We can write
_______________________________________  1 Dn 1 Dp 
J S  en i2   
8.11  N a  nO N d  pO 
eD n n po We want
Jn Ln 1 Dn
(a)  
Jn  J p eD n n po eD p p no N a  nO
  0.10
Ln Lp 1 Dn 1 Dp
  
Dn n i2 N a  nO N d  pO

 no Na or

2 2 1 25
Dn n Dp n
 i
  i 
 no Na  po N d Na 5  10  7
1 25 1 10
0.90 
1
7
 
D p no  N a
Na 5 10 N 5  10  7
 d
1   7.071  10 3
Dn po  N d 
 =  0.10
D p no  N a  1
7.071  10 
3 Na
Nd

4.472  10 3

 
 0.90  1
Dn po  N d  which yields
Na
Na Dn po  1   14.23
   1 Nd
Nd D p no  0.90 
Now


2510 7  0.1111  
J S  2.522 10 10  1.6 10 19 1.5 1010  2

105 10 7   1 25 1 10 
    
 14.23N d
Na Nd 5  10 7
5  10  7 
 0.07857 or  12.73 Nd
Nd Na
We find
(b) From part (a),
N d  7.09 1014 cm 3
Na Dn po  1  and
   1
Nd D p no  0.20  N a  1.011016 cm 3


2510 7  4 _______________________________________
105 10 7  8.13
Na Nd Plot
 2.828 or  0.354 _______________________________________
Nd Na
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 8
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

8.14 8.15
(a) (a) p-side;
eD n n po N 
E Fi  E F  kT ln  a 

Jn Ln  ni 

Jn  J p eD n n po eD p p no
 5 1015 
  0.0259 ln  
Ln Lp 10 
 1.5 10 
Dn n i2 or

 no Na E Fi  E F  0.329 eV
 Also on the n-side;
Dn ni2 D p n i2
   N 
 no Na  po N d E F  E Fi  kT ln  d 

 ni 
1
  1017 
D p no  N a   0.0259 ln  
10 
1    1.5 10 
Dn po  N d 
 or
We have E F  E Fi  0.407 eV
Dp  p 1  1 (b) We can find
  and no 
Dn  n 2.4  po 0.1 Dn  12500.0259  32.4 cm 2 /s
so D p  3200.0259  8.29 cm 2 /s
Jn 1
 Now
Jn  J p 1 1  Na 
1     1 Dp 
2.4 0.1  N d  Dn 1
 J S  en i2   
 N a  nO N d  pO 
or
Jn

1  
 1.6 10 19 1.5 1010 2

Jn  J p N 
1  2.04  a   1 32.4 1 8.29 
 Nd    
 5  10
15
10  6 10 17 10  7 
(b) Using Einstein's relation, we can write
or
e n ni2
 J S  4.426 10 11 A/cm 2
Jn Ln N a
 Then
e n ni2 e p ni2
Jn  J p
    
I S  AJ S  10 4 4.426 10 11 
Ln N a Lp Nd
or
e n N d I S  4.426 10 15 A

L We find
e n N d  n  e p N a
Lp V 
I  I S exp D 
We have
 Vt 
 n  e n N d and  p  e p N a
Also 
 4.426 10 15 exp
 0.5 
 
 0.0259 
Ln D n no 2.4
   4.90 or
Lp D p po 0.1
I  1.07 10 6 A  1.07  A
Then
 
(c) The hole current is
Jn n  p
 Dp V 
 
1
Jn  J p  n  p  4.90 I p  en i2 A  exp D 

Nd  po  Vt 
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 8
By D. A. Neamen Problem Solutions
______________________________________________________________________________________


 1.6 10 19 1.5 1010   10 
2 4 1 

V
(e) I p x n   I sp exp a



 10 
17
 Vt 
V 

8.29
7
exp D  
 1.342 10 14 exp 
 0.59746 

10  Vt   0.0259 
or  1.3997 10 4 A
V  I Total  I n  I p
I p  3.278 10 16 exp D  (A)
 Vt   4.198110 5  1.3997 10 4
Then  1.820 10 4 A
I p J p 3.278 10 16 Now
   0.0741
I J S 4.426 10 15     1 2L p 
I p  x n  L p   I p x n  exp
1 
_______________________________________
 2   Lp 
 
8.16
 
 1 
 1.3997 10  4 exp 
 eD p p no  Dp n 2
 2 
(a) I sp  A   eA  i
 Lp   po N d  8.4896 10 5 A
 
 
2 Then

 1.6 10 19
5 10  4 10

1.5 1010
 1   1 
I n  x n  L p   I Total  I p  x n  L p 
8 10 8 1.5 1016
 2   2 
I sp  1.342  10 14 A
 1.820 10 4  8.4896 10 5
 eD n n po  Dn n 2
 9.710 10 5 A
(b) I sn  A   eA
  i

 Ln   no N a _______________________________________


 1.6 10 19
5 10  4 25

1.5 1010   2
8.17
2  10  7 5 1016 (a) The excess hole concentration is given by
I sn  4.025 10 15 A p n  p n  p no

(c) Vbi  0.0259  ln 


 5  1016 1.5  1016 

   V
 p no exp a
  x
  1  exp


 Lp 
 1.5  1010
2
     Vt    
We find
 0.746826 V
Va  0.8Vbi  0.80.746826   0.59746 V p no 
ni2


1.5 1010  2

 2.25 10 4 cm 3
V  n  Va  2 Nd 1016
p n x n   p no exp a   
 N exp V 
i
and
 Vt   t 
80.0110 6 
d
L p  D p pO 

1.5 10  10 2
 0.59746 
exp   2.828 10 4 cm  2.828  m
1.5 1016  0.0259 
Then
 1.56 1014 cm 3
p n  2.25 10 4 exp
  0.610  
V    1
(d) I n  x p    I n x n   I sn exp a    0.0259  
 Vt 
 x 
 exp 

 4.025 10 15 exp 
 0.59746 
 4
 2.828 10 
 0.0259  or
 4.198110 5 A
p n  3.811014 exp
 x 
4
 cm 3
 2.828 10 
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 8
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

(b) We have (b) Problem 8.8

d p n  V 
J p  eD p p n  p no exp a 
dx 
 Vt 


eD p 3.808 1014  exp x  p   0.1N d 
  or Va  Vt ln  n   Vt ln  2
2.828 10 4
 2.828  10 4
 
 p no   n i N d 
At x  3  10 4 cm,
 0.1N d2 
J p 3 
  
1.6 10 19 8 3.808 1014  3 
exp

 Vt ln  
 n i 
2
4
2.828 10  2.828 
or
 0.0259  ln 

 0.1 8  1015 2 


J p 3  0.5966 A/cm 2  
 1.5  10 
10 2

(c) We have  0.623 V

eDn n po V  _______________________________________
J no  exp a 
Ln  Vt 
8.19
We can determine that
The excess electron concentration is given by
n po  4.5  10 3 cm 3 and Ln  10.72  m n p  n p  n po
Then
 V  
J no 
1.6 10 234.5 10 
19 3 x
 n po exp a   1  exp 

10.72 10  4   Vt    Ln 
 0.610  The total number of excess electrons is
 exp  

or
 0.0259 

N p  A n p dx
0

J no  0.2615 A/cm 2
We may note that

We can also find x x
J po  1.724 A/cm 2  exp L
0
dx   L n exp

n 

 L  0  Ln
 n 
Then at x  3  m, Then
J n 3  J no  J po  J p 3  V  
N p  ALn n po exp a   1
 0.2615  1.724  0.5966   Vt  
or
We find that
J n 3  1.39 A/cm 2
Dn  25 cm 2 /s and Ln  50.0  m
_______________________________________
Also
8.18
n po 
ni2


1.5 1010 2

 2.8110 4 cm 3
(a) Problem 8.7 Na 8 1015
V  Then
n p  n po exp a 
 Vt    
N p  10 3 50.0  10 4 2.8125  10 4 
  Vt ln  0.1N a 
 np     V  
or V a  Vt ln   exp a   1
 n po   n i N a 
2 
    Vt  
 0.1N a2  or
 Vt ln    V  
 n i  N p  0.1406exp a   1
2


 0.1 4  10 15 2 
 0.0259  ln  
   Vt  

 
Then, we find the total number of excess
 2.4  10 13 
2
electrons in the p-region to be:
 0.205 V
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 8
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

(a) Va  0.3 V, N p  1.51  10 4  E g 2  0.59 

10 3  exp 

(b) Va  0.4 V, N p  7.17  10 5  0.0259 
Then
(c) Va  0.5 V, N p  3.40  10 7
E g 2  0.59  0.0259  ln 10 3 
Similarly, the total number of excess holes in or
the n-region is found to be E g 2  0.769 eV
 V   _______________________________________
Pn  AL p p no exp a   1
  Vt   8.21
We find that (a) We have
D p  10.0 cm 2 /s and L p  10.0  m  1 Dn 1 Dp 
Also I S  Aeni2   
 N a  nO N d  pO 
p no
n2
 i 

1.5 1010 2

 2.25 10 4 cm 3 which can be written in the form

Nd 1016
I S  C ni2
Then
  Va  T 
3
  Eg 
 

Pn  2.25  10 2

exp   1

 C N cO N O   exp
 300   kT 


  Vt  
or
So
  Eg 
(a) Va  0.3 V, Pn  2.4110 3 I S  CT 3 exp 

(b) Va  0.4 V, Pn  1.15 10 5
 kT 
(b) Taking the ratio
(c) Va  0.5 V, Pn  5.45 10 6   Eg 
3 exp
 
_______________________________________
I S 2  T2  
 kT2 
   
8.20 I S1  T1    Eg 
exp 

V    Eg   eV   kT1 
I  ni2 exp a   exp   exp a 

 t 
V  kT   kT   1 
3
 T  1
Then   2
  exp  E g   
 T1   kT1 kT2 
 eVa  E g 
I  exp 
 1
 kT  For T1  300 K, kT1  0.0259 ,  38.61
kT1
so
1
 eV a1  E g1  For T2  400 K, kT2  0.03453 ,  28.96
exp 
 kT2
I1  kT 
 (i) Germanium: E g  0.66 eV
I2  eV a 2  E g 2 
exp 
 I S 2  400 
3

 kT    exp0.6638.61  28.96
I S1  300 
or
 eVa1  eVa 2  E g1  E g 2  I
I1 or S 2  1383
 exp 
 I S1
I2  kT 
(ii) Silicon: E g  1.12 eV
We then have
 0.255  0.32  0.525  E g 2 
3
10 10 3 I S2  400 
 exp     exp1.1238.61  28.96
10 10 6   300 
 0.0259  I S1
or I S2
or  1.17 10 5
I S1
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 8
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

8.22 V 
Plot (i) p n x n   0.1N d  p no exp a 

_______________________________________  Vt 
 n2  V 
8.23   i  exp a
 V


First case:  Nd   t 
If V   0.1N d2 
 exp a  or V a  Vt ln  
 n i 
2
Is  Vt 
or Vt 
Va

0.50
 0.05049 V  0.0259  ln 

 0.1 2  10 15 2  
ln
If ln 2 10 4  
 1.5  10 10
2

 
Is
Va  0.5516 V
 T 
Now 0.05049  0.0259  AeD p  n i2  V 
 300  (ii) I p    exp a 
W n  N d  V 
 T  584.8 K   t 
Second case:

10 1.6 10 101.5 10 
3 19 10 2

 1
I s  Aeni2 
Dn

1 Dp 

0.7 10 2 10 
4 15

 N a  no N d  po   0.5516 
 exp 
 
1.2 10 6  5 10 4 1.6 10 19 ni2    0.0259 
I p  4.565  10 3 A
 1 25 1 10 
 7
  AeDn n po V 
 4  10
15
5  10 2  1017 10  7  In  exp a 

Ln  Vt 
or ni2  8.2519 10 27
D n  n i2  V 
Now  Ae   exp a 
 no  N a  V 
  Eg    t 
ni2  N c N  exp 
 kT


 
 10 3 1.6  10 19  25


1.5  1010 
2

7
5  10 2  1017
8.2519 10   2.8 10 1.04 10  300
3
T 

27 19 19

   0.5516 
 exp 
  1.12   0.0259 
 exp  
 0.0259T 300  I n  2.26 10 6 A
I  In  I p
  1.12300
3
 T 
2.8337 10 11    exp    2.26 10 6  4.565 10 3
 300   0.0259T  
By trial and error,  4.567 10 3 A
T  502 K or I  4.567 mA
V 
 
The reverse-bias current is limiting factor.
_______________________________________ (b) (i) n p  x p  0.1N a  n po exp a 

 Vt 
8.24  n2  V 
  i  exp a 
L p  D p po  1010 7
  10 3
cm  Na


V
 t


or L p  10  m;  Wn  L p  0.1N a2 
or V a  Vt ln  
eD p p no V   n i
2

(a) J p x n   exp a 

Wn  Vt 
 0.0259  ln 

 0.1 2  10 15 2 



 1.5  10 10
2
 
Va  0.5516 V
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 8
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

AeD p  n i2  V  Then, from the first boundary condition, we

(ii) I p    exp a  obtain
W n  N d  V 
  t   V  


10 1.6 10 101.5 10 
3 19 10 2 p no exp a   1
  Vt  
0.7 10 2 10 4 17
  x n  2W n     xn 
 0.5516    B exp    B exp 

exp   Lp   Lp 
 0.0259 
  x    2Wn 
I p  4.565  10 5 A  B exp n  1  exp 
 L p   L p 
D n  n i2  V     
I n  Ae   exp a 
 no  N a  V  We then obtain
  t 
 V  
 
 10 3 1.6  10 19  25


1.5  1010  2 p no exp a   1
  Vt  
5  10 7
2 10 15 B
  x    2W n 
 0.5516  exp n  1  exp 
 exp   L p   L p 
 0.0259     
which can be written as
I n  2.2597 10 4 A
I  In  I p  V  x  Wn 
 
 2.2597 10 4  4.565 10 5 p no exp a   1  exp  n
 
  Vt    L p 
 2.716 10 4 A B
W    Wn 
or I  0.2716 mA exp n   exp 
 Lp   Lp 
_______________________________________    
We can also find
8.25
 V     x n  W n  
(a) We can write for the n-region  p no exp a   1  exp  
d 2 p n  p n A
  Vt    Lp 
 2 0
dx 2 Lp W    Wn 
exp n   exp 
 Lp   Lp 
The general solution is of the form    
x  
  B exp  x 
The solution can now be written as
p n  A exp
 Lp   Lp   V  
    p no exp a   1
The boundary condition at x  x n gives   Vt  
p n 
  Va   W 
p n x n   p no exp   1

2 sinh  n 
 Lp 
  Vt    
  xn      x  W  x    x n  W n  x   
 A exp   B exp  x n   exp  n n
  exp  
 Lp   Lp    Lp   Lp  
   
and the boundary condition at x  x n  W n or finally
gives  x  Wn  x 
p n x n  Wn   0 sinh  n 
  Va    L 
 
p n  p no exp   1 
p

  B exp  x n  W n  
 x  Wn     
 A exp n   t  
V W
 Lp    sinh  n 
   Lp   Lp 
 
From this equation, we have
  2x n  W n  
A   B exp  
 Lp 
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 8
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

(b) For T  310 K ,

d p n  1.12  0.60 1.12  V D 2
J p  eD p 
dx x  xn 0.0259 0.02676
which yields
 V  
 eD p p no exp a   1 V D 2  0.5827 V
  Vt   For T  320 K ,
=
W  1.12  0.60 1.12  V D 3
sinh  n  
 Lp  0.0259 0.02763
 
which yields
 1   
  cosh x n  W n  x  V D3  0.5653 V
 Lp   Lp  x  xn
    _______________________________________
Then
W   V  
eD p p no 8.27
Jp  coth n   exp a   1 (a) We can write
 Lp  
Lp     Vt    eV 
_______________________________________ I D  C  ni2  exp a 
 kT 
where C is a constant, independent of
8.26
temperature.
V 
I D  ni2 exp D  As a first approximation, neglect the
 Vt  variation of N c and N  with temperature
For the temperature range 300  T  320 K, over the range of interest. We can then write
neglect the change in N c and N  .   Eg  V 
I D  C1  exp   exp a 
 V 
Then  t 
 kT 
  Eg 
I D  exp
 eV 
  exp D 


  E g  eV a  
 kT   C1  exp  
 kT 
 kT 

  E g  eV D   where C1 is another constant, independent of
 exp  
 kT  temperature. We find
Taking the ratio of currents, but maintaining E g  eV a C 
I D a constant, we have  ln  1 
kT  ID 

  E g  eV D1   or
exp  
 kT1   kT   C 
1 Va  E g     ln  1 
  E g  eV D2    e   ID 
exp  
 kT 2  _______________________________________
We then have
8.28
E g  eV D1 E g  eV D 2
  1 Dn 1 Dp 
kT1 kT2 (a) I s  Aeni2   
 N a  n0 Nd  p0 
We have 
T  300 K , V D1  0.60 V and
  
 10 4 1.6 10 19 1.5 1010 
2

kT
kT1  0.0259 eV, 1  0.0259 V  1 25 1 10 
e  7
 
T  310 K ,  4  10
16
10 4  10 16 10  7 

kT2  0.02676 eV,

kT2
 0.02676 V I s  2.323 10 15 A
e Aen i W
T  320 K , (b) I gen 
2 0
kT3
kT3  0.02763 eV,  0.02763 V We find
e
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 8
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
Aeni W
I s  I gen 
Vbi  0.0259  ln 

 4 1016 4  1016   
 2 0
 1.5 10  10 2
  
  
10 1.6 10 19 4.734 1014 6.109 10 5
4
 
 0.7665 V 2 10 7  
and Then
 2  V  V R   N a  N d  I s  I gen  2.314 10 6 A
1/ 2

W   s bi  
  N N  or I s  I gen  2.314  A
e  a d 



 211.7 8.85 10 14 0.7665  5  (b) From Problem 8.28
I s  2.323 10 15 A
 1.6 10 19
1/ 2 I gen  7.331 10 11 A
16 
 4  10  4  10  
16
 V  V 

 4  10 4  10  
16
 16  
 So I  I s exp a   I gen exp a 
 Vt   2Vt 
W  6.109 10 5 cm
V 
Then 
2.323 10 15 exp a  
I gen 
  
10 4 1.6 10 19 1.5 1010 6.109 10 5    Vt 
2 10  7
  V 
 7.33110 11 exp a 
 7.33110 11 A  2Vt 
I gen 7.33110  11
V 
(c)  15
 3.16 10 4 exp a 
Is 2.323 10  Vt  7.331 10
11

_______________________________________  V  2.323  10 15
exp a 
8.29  2Vt 
(a) Set I S  I gen , V 
exp a   3.1558 10 4
 1 Dn 1 D p  Aeni W  2Vt 
Aeni2  

 N a  n 0 N d  p 0  2 0 
Va  2Vt ln 3.1558 10 4 
 0.5366 V
 1 25 1 10  _______________________________________
ni   
 4  10
16
10  7 4  10 16 10  7 
8.30
W 6.109 10 5
   kT 
2 0 2 10  7  
Dn      n  0.02595500
 e 
3.0545 10 2
so ni   142.5 cm 2 /s
3.9528 10 13  2.50 10 13
D p  0.0259220  5.70 cm 2 /s
 4.734 1014 cm 3
Then
(a)
ni2  2.2407 10 29
 1 Dn 1 Dp 
(i) I s  Aeni2   
  
3
19  T 
 2.8 10 1.04 10    N a  n 0 N d  p 0 
19

 300 
10  T 
3
  1.12300   
 2 10 4 1.6 10 19 1.8 10 6  2

7.6947 10    exp  
 300   0.0259T   
 1 142.5

1 5.70 
8 
By trial and error,  7  10
16
2  10 7  10 16
2  10 8 
T  567 K
We have I s  1.50 10 22 A
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 8
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

V  8.31
(ii) I D  I s exp a  Using results from Problem 8.30, we find
 Vt  Va  0.4 V, I d  7.64 10 16 A,
  0.6 
 1.50 10  22 exp  I rec  1.35 10 10 A, I T  1.35 10 10 A
 0.0259 
Va  0.6 V, I d  1.73 10 12 A
 1.726 10 12 A
I rec  6.44 10 9 A, I T  6.44 10 9 A

(iii) I D  1.50 10  22
  0.8 
exp 
Va  0.8 V, I d  3.90 10 9 A
 0.0259 
 3.896 10 9 A I rec  3.06 10 7 A, I T  3.10 10 7 A

  1.0 
(iv) I D  1.50 10  22 exp   V a  1.0 V, I d  8.80 10 6 A
 0.0259  I rec  1.45 10 5 A, I T  2.33 10 5 A
6
 8.795 10 A V a  1.2 V. I d  1.99 10 2 A
Aen i W
(b) I gen  I rec  6.90 10 4 A, I T  2.06 10 2 A
2 0
_______________________________________

 7 1016 7  1016 
Vbi  0.0259  ln  
 
 1.8 10 6
2
  8.32
Plot
 1.263 V _______________________________________

W 

 213.1 8.85 10 14 1.263  3  8.33
 1.6 10 19 Plot
1/ 2
 7  10 16  7  10 16   _______________________________________


 7  10 7  10
16
16
 
  8.34
 4.20110 cm 5 We have that
(i)Then np  ni2
R
I gen 
2 10 1.6 10 1.8 10 4.20110 
4 19 6 5
 pO n  n    nO  p  p 
22 10  8
Let  pO   nO   O and n   p   ni
14
 6.049 10 A We can write
V   E  E Fi 
(ii) I rec  I ro exp a  n  ni exp Fn 
  kT 
 2Vt 
and

 6 10 14 exp 
 0.6 
  E Fi  E Fp 
 20.0259  p  ni exp 

 6.436 10 9 A  kT 
We also have
(iii) I rec  
 0.8 
 6 10 14 exp  
EFn  EFi   EFi  EFp  eVa 
 20.0259   so that
 3.058 10 7 A  
E Fi  E Fp  eVa  E Fn  E Fi 
  1.0 
(iv) I rec  6 10 14 exp   Then
 20.0259    eV  E Fn  E Fi  
p  ni exp  a 
 1.453 10 5 A  kT 
_______________________________________  eV    E Fn  E Fi 
 ni exp a   exp  
 kT   kT 
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 8
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

Define ni  eV 
 E  E Fi  Rmax  exp a 
eV
 a  a and    Fn  2 O  2kT 
kT  kT  Q.E.D.
Then the recombination rate can be written as _______________________________________

R

ni e ni e a  e   ni2  

 O ni e  ni  ni e a  e   ni  8.35
We have
or W

R
n i e a  1   
J gen  eGdx

 O 2  e  e a  e   0

In this case, G  g   41019 cm 3 s 1 and is

To find the maximum recombination rate, set
dR a constant through the space charge region.
0 Then
d
J gen  eg W


ni e a  1   d 2  e 
 e a  e  
1
We find
O d N N 
or Vbi  Vt ln  a 2 d 

ni e a  1    12  e 
 e a  e  
2
 ni 
0
O  
 5  1015 5  1015
 0.0259  ln 


 e  ea  e   
 1.5  1010
2
 
which simplifies to or

0
 n i e a  1 

 e  e  a
e 
 Vbi  0.659 V
O  e  2  e  e  a

2 Also
 2  V  V R   N a  N d
1/ 2
The denominator is not zero, so we have 
W   s bi  
 N N 
0  e  e a  e   e  a d 
or
a 
 
 211.7 8.85 10 14 0.659  10
2 a
e e    1.6 10 19
2
1/ 2
Then the maximum recombination rate  5  1015  5  1015 
  
becomes
ni e a  1   
 5  10 5  10
15
 15
 

Rmax 

 O 2  ea 2  ea  e a 2  or
W  2.35 10 4 cm

ni e  a
1  Then
O 2e  a 2
 e a 2
   
J gen  1.6  10 19 4  1019 2.35  10 4 
or or

Rmax 

n i e a  1  J gen  1.5  10 3 A/cm 2
2 O  a 2  1 e  _______________________________________
which can be written as
  eV  
ni exp a   1
  kT  
Rmax 
  eV  
2 O exp a   1
  2kT  
If V a  kT e  , then we can neglect the (-1)
term in the numerator and the (+1) term in the
denominator, so we finally have
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 8
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

8.36 8.38
 1 Dp  Q
Dn 1 (a) C d  , For I D  1.2 mA
J S  en i2    V
 N a  nO Nd  pO 
 
Q  C d  V  1.158 10 8 50 10 3  
 1
 
 1.6  10 19 1.5  10 10 2
 
18  5.79 10 C 10

 3  10
16
10  7 (b) For I D  0.12 mA


1 6 


Q  C d  V  1.158 10 9 50 10 3  
10 18 10 7   5.79 10 C 11

or _______________________________________
J S  1.638 10 11 A/cm 2
8.39
Now
For a p  n diode
V 
J D  J S exp D  I DQ I DQ pO
 Vt  gd  , Cd 
Vt 2Vt
We want
Now
J  0  JG  J D
10 3
or gd   3.86 10  2 S
V  0.0259
0  25 10 3  1.638 10 11 exp D  and
 Vt 
Cd 
 
10 3 10 7 
 1.93 10 9 F
20.0259 
which can be written as
V  25 10 3
exp D   11
 1.526 10 9 We have
 t 
V 1 .638  10 1 1 g  jC d
Z   d2
We find Y g d  jC d g d   2 C d2

V D  Vt ln 1.526 10 9  where   2 f
or
V D  0.548 V We obtain
_______________________________________ f  10 kHz , Z  25.9  j 0.0814
f  100 kHz , Z  25.9  j 0.814
8.37
f  1 MHz , Z  23.6  j7.41
Vt 0.0259
(a) rd    21.6  f  10 MHz , Z  2.38  j 7.49
I DQ 1.2 10 3
1.2 10 0.5 10 
_______________________________________
I DQ 0 3 6
Cd  
2Vt 20.0259 8.40
8 Reverse bias
 1.16 10 F 1/ 2
or C d  11.6 nF  e s N a N d 
C j  AC   A   
0.0259  2Vbi  V R N a  N d  
(b) rd   216 
0.12  10 3 
 5  1017 8  1015 
Vbi  0.0259  ln 
 
Cd 

0.12  10 3 0.5  10 6   
 1.5  1010
2

 
20.0259 
 0.790 V

   
 1.16 10 9 F
 1.6 10 19 11.7 8.85 10 14
or C d  1.16 nF 
C j  2 10  4 
2Vbi  V R 
_______________________________________ 
   
1/ 2
 5  1017 8  1015
 
 5  10  8  10  
17 15
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 8
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

5.1078  10 12  pO  20.0259 2.5  10 6 

Cj  F
Vbi  V r or
 pO  1.3  10 7 s
V R (V) C j (pF)
At 1 mA,
  
10 1.555
5 2.123 C d  2.5 10 6 10 3
3 2.624 or
1 3.818 C d  2.5 10 9 F
0 5.747
_______________________________________
0.20 6.650
0.40 8.179
8.42
(a) N a  N d  I po  I no
Forward bias
For N a  N d  I po  I no I po p 0
(i) C d 
Then 2Vt

Cd 
I po p 0 I po 8 10 8

  
 1.544 10 6 I po  or I po 
2Vt C d 


20.0259  10 9 
2Vt 20.0259  p0 10  7
D p  ni2  V   5.18 10 4 A
I po  Ae    exp a
V

  0.518 mA
 p 0  N d 
  t 
or I po


 2  10 4
1.6 10  19 10


1.5 1010 2
(ii) I po  Ae
Dp

ni2 V
exp a



8 10 8 8  1015  p0 Nd  Vt 
V
 exp a




0.518 10 3  5 10  4 1.6 10 19   10
 Vt  10 7

  V 

1.5 10  10 2
V
exp a


I po  1.006 10 14
exp a  A
 
 Vt  8 10 15
 Vt 
 0.518 10 3 
Va (V) C d (F) + C j (F) = C Total (F) Va  0.0259 ln  14 

 2.25 10 
0.20 3.5110 17  6.650 10 12  0.618 V
 6.650 10 12 V
(iii) rd  t 
0.0259
 50 
0.40 7.92 10 14  8.179 10 12 I D 0.518  10 3
 8.258 10 12 (b)
0.60 1.79 10 10
 ...
2V C  20.0259  0.25 10 9
(i) I po  t d 
 
 p0 10  7
 1.79 10 10
_______________________________________  1.295 10 4 A
or I po  0.1295 mA
8.41
 0.1295 10 3 
For a p  n diode, I pO  I nO , then (ii) Va  0.0259 ln  14 

 2.25 10 
 1 
C d   
 I pO pO
   0.5821 V
 2Vt  0.0259
(iii) rd   200 
Now 0.1295  10 3
 pO _______________________________________
 2.5 10 6 F/A
2Vt
Then
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 8
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

8.43 (b) Set R  0

(a) p-region: (i) For I D  1 mA,
pL L L
Rp     10 3 
A  p A e p N a A   V  0.0259 ln  10 
 10 
so
or V  0.417 V
0.2
Rp 
1.6 10 48010 10 
19 16 2
(ii) For I D  10 mA,
or
 10 2 
R p  26  V  0.0259 ln  10 
n-region:  10 
 L L L or V  0.477 V
Rn  n  
 n A e n N d A
_______________________________________
A
so 8.45
0.10 Vt V 0.0259
Rn 
 
1.6  10 1350  10 15 10  2
19
   (a) rd 
ID
 ID  t 
rd 32
or
or I D  8.09375 10 4 A
Rn  46.3 
I 
The total resistance is Va  Vt ln  D 

R  R p  Rn  26  46.3  Is 
or  8.09375 10 4 
R  72.3   0.0259 ln  12


 5 10 
(b)
Va  0.4896 V
V  IR  0.1  I 72.3
V 0.0259
which yields (b) I D  t   4.3167  10  4 A
I  1.38 mA rd 60
_______________________________________  4.3167 10 4 
Va  0.0259 ln  12


8.44  5 10 
 n Ln  p L p   0.4733 V
R 
An  A p 
_______________________________________


0.210 2
  0.110  2
8.46
5 5
2 10 2 10 1 dI D 1  V 
or (a)   I S   exp a
 V


R  150 
rd dVa  Vt   t 
or
We can write
1 10 13  0.020 
I    exp 
V  I D R  Vt ln  D  rd 0.0259  0.0259 
 IS  which yields
(a) (i) For I D  1 mA, rd  1.2 1011 
 10 3 
 
V  10 3 150  0.0259 ln  10 
(b)
 10  1 10 13   0.02 
  exp 
or V  0.567 V rd 0.0259  0.0259 
(ii) For I D  10 mA, which yields
 10 2  rd  5.6 1011 
 
V  10  2 150  0.0259 ln  10 
_______________________________________
 10 
or V  1.98 V
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 8
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

8.47 8.49
I C j  18 pF at V R  0
(a) If R  0.2
IF C j  4.2 pF at V R  10 V
Then we have We have
ts IF 1 1  nO   pO  10 7 s , I F  2 mA
erf   
 pO IF  IR I R 1  0.2 and
1
IF V R 10
IR    1 mA
or R 10
ts So
erf  0.833  I 
 pO   2
t s   pO ln 1  F   10 7 ln 1   
We find  I R   1
ts ts or
 0.978   0.956 t s  1.110 7 s
 pO  pO
Also
IR 18  4.2
(b) If  1.0 , then C avg   11.1 pF
IF 2
ts 1 The time constant is
erf
 pO

11
 0.50  
 S  RC avg  10 4 11.1 10 12 
which yields  1.1110 7 s
ts Now, the turn-off time is
 0.228
 pO t off  t s   S  1.1  1.11 10 7
_______________________________________ or
t off  2.21 10 7 s
8.48 _______________________________________
ts IF
(a) erf 
p IF  IR 8.50

erf 0.3 = erf 0.5477  Vbi  0.0259  ln 


 5  1019 2 
  1.136 V

 erf 0.55  0.56332 
 1.5  1010 
2

We find
1
Then 0.56332   2  V  V a   N a  N d
1/ 2
I 
1 R W   s bi  
 N N 
IF  e  a d 
IR

1
 1  0.775 
 
 211.7  8.85 10 14 1.136  0.40
I F 0.56332
 1.6 10 19
 t  1/ 2
exp 2   5 1019  5 1019 
  p0  I   
(b) erf
 p0
t2

 
 1  0.1 R  
 5  10 
19 2 
 
 t   IF 
 2  which yields
  p0 
 
o
W  6.17 10 7 cm  61.7 A
 1 0.10.775 _______________________________________
 1.0775
t2 8.51
By trial and error,  0.80 Sketch
 p0 _______________________________________
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 8
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

8.53
From Figure 7.15, N d  91015 cm 3
Let N a  51017 cm 3
V 
p n x n   0.1N d  9 1014  p no exp a 

 Vt 

p no 
ni2


1.5 1010 
2

 2.5 10 4 cm 3
Nd 9 1015
 9 1014 
Then Va  0.0259 ln    0.6295 V

 2.5 10
4

I 50 10 3
Is  
V   0.6295 
exp a  exp 
 Vt   0.0259 
 1.389 10 12 A
AeD p p no Aeni2 Dp
Is  
Lp Nd  p0
12
1.389 10



A 1.6  10 19 1.5 1010 2
10
9 1015 2  10  7
1.389 10 12  A 2.828 10 11  
2
or A  4.9110 cm 2

_______________________________________