Semiconductors
58. Which of the following pn junction is used 64. The source voltage and source resistance are
unbiased? 9 V and 1000 : respectively. The current
(1) Photo diode (2) LED through a silicon diode connected to the source
is (Given that knee voltage of Si = 0.7 V)
(3) Zener diode (4) Solar cell
(1) 3.8 mA (2) 4.5 mA
59. Which of the following is correct about transistor
in active region? (3) 8.3 mA (4) 5.4 mA
(1) Base-emitter junction in forward biased 65. If E 1 , E 2 and E3 are the band gap of silicon,
germanium and carbon respectively then
(2) Base-collector junction in reverse biased
(3) Emitter is heavily doped (1) E1 > E2 > E3 (2) E1 < E2 < E3
(4) All of these (3) E1 = E2 < E3 (4) E2 < E1 < E3
60. In the given circuit power developed in 2 k: 66. Two ideal diodes are used in the circuit shown.
resistor is If the voltage drop across R1 is 1.3 V, and that
across R2 is V, then
N:
5
9 N: 5
±
9
(1) 36 mW (2) 12 mW
(
(3) 144 mW (4) 72 mW
(1) E = 2 V, V = 1.3 V
61. The output Y of the logic gate circuit shown in
(2) E = 1.3 V, V = 0
figure is best represented as
(3) E = 2 V, V = 0
$
(4) E = 2.3 V, V = 1.7 V
<
67. The following configuration of logic gate is
equivalent to
%
$
(1) $ $ ā% (2) $ $ ā% %
(3) A + (A·B) (4) $ $ ā%
62. The conductivity of an n-type semiconductor
whose Density of conduction electrons is n e , (1) NAND gate
Density of holes is n h , Mobility of conduction
electrons is Pe and Mobility of holes is Ph, will be (2) XOR gate
(1) e[ne Ph + ne Pe ] (2) e[ne Pe + nh Pe ] (3) OR gate
(3) ene [Pe + Ph ] (4) e[ne Pe + nh Ph ] (4) NOR gate
63. The current gain D of a transistor in a common 68. Which symbol of the following p-n junctions is
base arrangement is 0.98. Ratio of change in used for voltage stabilisation?
collector current ('iC) to change in base current
('iB), corresponding to a change of 5.0 mA in
emitter current is (1) (2)
(1) 0.1
(2) 10
(3) 49 (3) (4)
(4) 4.9
Semiconductors
69. An n-p-n transistor having a.c. current gain of 50
is to be used to make an amplifier of voltage 73. In a semiconductor of the total current is due
gain 6. What will be power gain of the amplifier?
to flow of electrons. If drift velocity of electrons is
(1) 300 (2) 600
(3) 750 (4) 400 times that of holes, then the ratio of
70. The output Y, in the network shown, when all the concentration of electrons and holes is
three inputs are first high and then low, will
respectively be (1) 3 : 4
(2) 4 : 3
$ (3) 2 : 3
% (4) 3 : 2
<
&
74. Current gain of a transistor is 0.99. If it is used
in common emitter mode to form a transistor
(1) 0, 1 (2) 1, 0
amplifier with input resistance 1 k: and load
(3) 1, 1 (4) 0, 0 resistance 10 k:, then the voltage gain of the
71. The I-V characteristics of a p-n junction diode is amplifier is
shown. If R1 and R2 be the dynamic resistance of (1) 99 (2) 0.99
the p-n junction when (i) a forward bias of 1 volt
(3) 9.9 (4) 990
is applied and (ii) a forward bias of 2 volt is
5 75. Current in the circuit shown, will be (If diodes
applied respectively, then ? are ideal)
5
, P$ :
:
: 9
(1) $ (2) $
9 YROW
(1) 160 (2) 16 (3) $ (4) $
(3) 1.6 (4) 0.16
76. The forward biased diode is
72. Current I1 through the Zener diode shown in the
circuit is ±9 ±9
(1)
, N:
9 9
5 (2)
9 9 ±9
, , (3)
5 N: ±9 9
9= 9 (4)
77. When a diode is heavily doped the
(1) Zero (1) Zener voltage will be low
(2) 0.6 mA (2) Avalanche voltage will be high
(3) 0.2 mA (3) Depletion region will be thin
(4) 0.8 mA (4) Leakage current will be low
Semiconductors
78. The logic behind NOR gate is that which gives 85. The output current in half wave rectifier is (where
(1) High output when both inputs are high I0 is the peak current)
(2) Low output when both inputs are low , ,
(1) (2)
(3) High output when both inputs are low S S
(4) Low output when both inputs are same , ,
(3) (4)
79. An amplifier has a voltage gain AV = 1000. The S S
voltage gain in dB is 86. In an NPN transistor, 108 electrons enter the
(1) 30 dB (2) 60 dB emitter in 10–8 s. If 1% electrons are lost in the
base, the fraction of current that enters the
(3) 3 dB (4) 20 dB
collector and the current amplification factor are,
80. The energy gap of silicon is 1.14 eV. The respectively
maximum wavelength at which silicon will begin
absorbing energy is (1) 0.7 and 50 (2) 0.9 and 90
(1) 10.888 Å (3) 0.8 and 49 (4) 0.99 and 99
(2) 108.88 Å 87. In the middle of depletion layer of a reverse
(3) 10888 Å biased PN junction, the
(4) 1088 Å (1) Potential is zero
81. The output of OR gate is 1 (2) Electric field is zero
(1) Only if both inputs are zero (3) Potential is maximum
(2) If either or both inputs are 1 (4) Electric field is maximum
(3) Only if both inputs are 1
88. When a transistor is used in common emitter
(4) If any input is zero mode as an amplifier
82. In case of current gains D and E of a transistor, (1) Base-emitter junction is forward biased
(1) D= E (2) DE= 1
(2) Base-emitter junction is reverse biased
(3) E< 1, D> 1 (4) E> 1, D< 1
(3) Base-collector junction is forward biased
83. The voltage gain of the amplifier is
(4) Input is connected in series with voltage
N:
applied across base-collector junction
N: 89. The output of a NAND gate is 0, when
±
(1) Both inputs are 0
9 N: 9
(2) One input is 0 and the other is 1
(3) Both inputs are 1
(1) 10 (2) 100
(4) All of these
(3) 1000 (4) 9.9
90. The resistance of a germanium junction diode
84. Identical operation performed by given circuit is
whose V - I graph for small range as shown in
that due to
the figure is
$ ,
<
P$
%
(1) AND gate
9
(2) OR gate 9 9
(3) NOT gate (1) 5 k: (2) 0.2 k:
(4) NAND gate (3) 2 k: (4) 10 k: