FDP054N10 N-Channel PowerTrench® MOSFET

August 2010

FDP054N10
N-Channel PowerTrench® MOSFET
100V, 144A, 5.5mΩ
Features Description
• RDS(on) = 4.6mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that has been
• Fast Switching Speed especially tailored to minimize the on-state resistance and yet
• Low Gate Charge maintain superior switching performance.

• High Performance Trench Technology for Extremely Low

RDS(on)
Application
• High Power and Current Handling Capability
DC to DC Converters / Synchronous Rectification
• RoHS Compliant

TO-220
G D S
S

MOSFET Maximum Ratings TC = 25oC unless otherwise noted

Symbol Parameter Ratings Units
VDSS Drain to Source Voltage 100 V
VGSS Gate to Source Voltage ±20 V
- Continuous (TC = 25oC, Silicon Limited) 144*
ID Drain Current - Continuous (TC = 100oC, Silicon Limited) 102 A
- Continuous (TC = 25oC, Package Limited) 120
IDM Drain Current - Pulsed (Note 1) 576 A
EAS Single Pulsed Avalanche Energy (Note 2) 1153 mJ
dv/dt Peak Diode Avalanche Energy (Note 3) 3.6 V/ns
(TC = 25oC) 263 W
PD Power Dissipation
- Derate above 25oC 1.75 W/oC
o
TJ, TSTG Operating and Storage Temperature Range -55 to +175 C
Maximum Lead Temperature for Soldering Purpose, o
TL 300 C
1/8” from Case for 5 Seconds
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
Symbol Parameter Ratings Units
RθJC Thermal Resistance, Junction to Case 0.57 o
C/W
RθJA Thermal Resistance, Junction to Ambient 62.5

©2010 Fairchild Semiconductor Corporation 1 [Link]

FDP054N10 Rev. A1
 FDP054N10 N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDP054N10 FDP054N10 TO-220 - - 50

Electrical Characteristics TC = 25oC unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TC = 25oC 100 - - V
ΔBVDSS Breakdown Voltage Temperature
ID = 250μA, Referenced to 25oC - 0.01 - V/oC
ΔTJ Coefficient
VDS = 100V, VGS = 0V - - 1
IDSS Zero Gate Voltage Drain Current μA
VDS = 100V, VGS = 0V, TC = 150oC - - 500
IGSS Gate to Body Leakage Current VGS = ±20V, VDS = 0V - - ±100 nA

On Characteristics
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250μA 2.5 3.5 4.5 V
RDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 75A - 4.6 5.5 mΩ
gFS Forward Transconductance VGS = 10V, ID = 75A (Note 4) - 192 - S

Dynamic Characteristics
Ciss Input Capacitance - 9985 13280 pF
VDS = 25V, VGS = 0V
Coss Output Capacitance - 935 1245 pF
f = 1MHz
Crss Reverse Transfer Capacitance - 390 585 pF
Qg(tot) Total Gate Charge at 10V - 156 203 nC
VDS = 80V, ID = 75A,
Qgs Gate to Source Gate Charge - 53 - nC
VGS = 10V
Qgd Gate to Drain “Miller” Charge (Note 4,5) - 48 - nC

Switching Characteristics
td(on) Turn-On Delay Time - 44 98 ns
VDD = 50V, ID = 75A
tr Turn-On Rise Time - 92 194 ns
VGS = 10V, RGEN = 4.7Ω
td(off) Turn-Off Delay Time - 80 170 ns
tf Turn-Off Fall Time (Note 4,5) - 39 88 ns

Drain-Source Diode Characteristics

IS Maximum Continuous Drain to Source Diode Forward Current - - 144 A
ISM Maximum Pulsed Drain to Source Diode Forward Current - - 576 A
VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 75A - - 1.3 V
trr Reverse Recovery Time VGS = 0V, ISD =75A - 57 - ns
Qrr Reverse Recovery Charge dIF/dt = 100A/μs (Note 4) - 121 - nC

Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 0.41mH, IAS = 75A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3: ISD ≤ 75A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics

FDP054N10 Rev. A1 2 [Link]

 FDP054N10 N-Channel PowerTrench® MOSFET
Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

1000 1000
VGS = 15.0 V * Notes :
10.0 V 1. VDS = 20V
8.0 V 2. 250μs Pulse Test
7.0 V

ID, Drain Current[A]

6.5 V
ID, Drain Current[A]

6.0 V 100
o
150 C
100
o
25 C
10
*Notes:
1. 250μs Pulse Test o
o
-55 C
2. TC = 25 C

10 1
0.1 1 6 3 4 5 6 7
VDS, Drain-Source Voltage[V] VGS, Gate-Source Voltage[V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
7 1000
Drain-Source On-Resistance

IS, Reverse Drain Current [A]

6 o
150 C
100
RDS(on) [mΩ],

VGS = 10V
5 o
25 C

10
4 VGS = 20V
Notes:
1. VGS = 0V
o
* Note : TC = 25 C 2. 250μs Pulse Test
3 1
0 100 200 300 400 0.2 0.4 0.6 0.8 1.0 1.2
ID, Drain Current [A] VSD, Body Diode Forward Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

100000 10
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd VDS = 20V
VGS, Gate-Source Voltage [V]

Crss = Cgd VDS = 50V

8 VDS = 80V
Ciss
Capacitances [pF]

10000
6

Coss
4
1000 Crss

2
* Note:
1. VGS = 0V * Note : ID = 75A
2. f = 1MHz
100 0
0.1 1 10 30 0 30 60 90 120 150 180
VDS, Drain-Source Voltage [V] Qg, Total Gate Charge [nC]

FDP054N10 Rev. A1 3 [Link]

 FDP054N10 N-Channel PowerTrench® MOSFET
Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature
1.2 2.4
Drain-Source Breakdown Voltage

Drain-Source On-Resistance
2.0
1.1

RDS(on), [Normalized]
BVDSS, [Normalized]

1.6

1.0
1.2

0.9
* Notes :
0.8 * Notes :
1. VGS = 0V 1. VGS = 10V
2. ID = 10mA 2. ID = 75A
0.8 0.4
-80 -40 0 40 80 120 160 200 -80 -40 0 40 80 120 160 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
1000 150
10μs

100μs
100
ID, Drain Current [A]

ID, Drain Current [A]

1ms
100
10ms
10
DC Limitted by package
Operation in This Area
is Limited by R DS(on)
1
50
*Notes:
0.1 o
1. TC = 25 C
o
2. TJ = 175 C
3. Single Pulse
0.01 0
0.1 1 10 100 200 25 50 75 100 125 150 175
o
VDS, Drain-Source Voltage [V] TC, Case Temperature [ C]

Figure 11. Transient Thermal Response Curve

1
Thermal Response [ZθJC]

0.5

0.2
0.1
0.1

0.05 PDM

0.02 t1
0.01 t2
0.01 * Notes :
o
Single pulse 1. ZθJC(t) = 0.57 C/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.001
-5 -4 -3 -2 -1
10 10 10 10 10 1 10
Rectangular Pulse Duration [sec]

FDP054N10 Rev. A1 4 [Link]

 FDP054N10 N-Channel PowerTrench® MOSFET
Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

FDP054N10 Rev. A1 5 [Link]

 FDP054N10 N-Channel PowerTrench® MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT +

VDS

I SD
L

Driver
RG
Same Type
as DUT VDD

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

Gate Pulse Width

VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current

I SD
( DUT ) di/dt

IRM

Body Diode Reverse Current

VDS
( DUT ) Body Diode Recovery dv/dt

VSD VDD

Body Diode
Forward Voltage Drop

FDP054N10 Rev. A1 6 [Link]

 FDP054N10 N-Channel PowerTrench® MOSFET
Mechanical Dimensions

TO-220

FDP054N10 Rev. A1 7 [Link]

 FDP054N10 N-Channel PowerTrench® MOSFET
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intended to be an exhaustive list of all such trademarks.
AccuPower™ F-PFS™ Power-SPM™ ®*
Auto-SPM™ FRFET® PowerTrench®
SM
Build it Now™ Global Power Resource PowerXS™ The Power Franchise®
CorePLUS™ Green FPS™ Programmable Active Droop™ ®

CorePOWER™ Green FPS™ e-Series™ QFET®

CROSSVOLT™ Gmax™ QS™
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Definition of Terms
Datasheet Identification Product Status Definition

Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later

Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild

Obsolete Not In Production Semiconductor. The datasheet is for reference information only.
Rev. I48

FDP054N10 Rev. A1 8 [Link]