Testing Design Problems
Testing Design Problems
Exam 2021-01-25
Problem 1
A data acquisition system has to be developed in order to monitor the solar irradiance Ee along a Photo Voltaic (PV) plant.
The plant includes 4 strings that cover a 20 m × 20 m square area; each string is made up of 10 series-connected PV
modules. The solar irradiance on each PV module has to be measured and is expected to be in the range
2
Ee ∈ [50, 1300] W/m .
Silicon reference cells are available and are characterized by a voltage output
2
Vcell = 60 mV, ±0.1% at Ee = 1 kW/m .
Solution
2) Professor’s solution
2.1 Sensor sensitivity S
Define the sensitivity:
Vcell
S=
Ee
2
At Vcell = 60 mV and Ee = 1000 W/m :
60 × 10−3 V V
S= 2 = 60 × 10−6 2
1000 W/m W/m
Hence:
2
S = 60 µV/(W/m )
Sensor relative uncertainty:
εVcell = 0.001 ⇒ εS = 0.001
1
2.2 Irradiance range → sensor voltage range Vs
The sensor output is:
Vs = S · Ee
At the limits:
Vs,min = S · 50 = 60 µV · 50 = 3 mV
Vs,max = S · 1300 = 60 µV · 1300 = 78 mV
Thus:
Vs ∈ [3, 78] mV
2
2.3 Resolution requirement 1 W/m ⇒ ∆Vs
2
For ∆Ee = 1 W/m :
dVs
∆Vs = ∆Ee = S∆Ee = 60 µV
dEe
So:
∆Vs = 60 µV
75 mV 75 × 10−3
#levels ≈ = = 1250
60 µV 60 × 10−6
Thus:
2Nb ≥ 1250 ⇒ Nb ≈ 11
Therefore:
Nb = 11
This indicates VF R is a design choice; a smaller VF R improves voltage resolution provided the amplified signal does not
saturate. In the solution, the working assumption is:
VF R ≈ 1 V
2
3.3 Gain constraint and chosen gain G
Non-inverting amplifier:
R2
VADC = Vs 1+ = G Vs
R1
Impose no saturation:
1 1
VADC ≤ VF R ≈ 1 V ⇒ G ≤ = ≈ 12.8
Vs,max 0.078
Hence:
G ≤ 12.8
Choose:
G = 11
Select resistors:
R1 = 1 kΩ, R2 = 10 kΩ
since:
10k
G=1+ = 11
1k
5) Sampling frequency fs
Minimum sampling rate per node:
#readings 100
fs,min = = = 50 Sa/s
UR 2
Professor’s selected value (with margin):
fs = 500 Sa/s
3
6) Calibration function (measurement model) and uncertainty
6.1 Digital output relationship and calibration equation
Approximate relation:
VADC
Dout ≈
Vq
Also:
VADC = G Vs = G S Ee
and:
R2 R1 + R 2 1 R1
G=1+ = ⇒ =
R1 R1 G R1 + R 2
Solving for Ee gives the calibration (measurement) model:
Dout Vq R1
Ee = ·
S R1 + R 2
∂Ee 2
≈ 0.74 W/m /LSB
∂Dout
2
∂Ee W/m
≈ 1.18
∂R1 Ω
2
∂Ee W/m
≈ 0.118
∂R2 Ω
4
6.5 Final inequality and budget allocation
Assembled inequality:
0.74 δDout + 1.3 + 1.18 δR1 + 0.118 δR2 ≤ 5
Remaining budget after the sensor term:
2
5 − 1.3 = 3.7 W/m
Allocate:
0.74 δDout ≤ 1.85, 1.18 δR1 ≤ 0.925, 0.118 δR2 ≤ 0.925
Thus:
1.85
δDout ≤ ≈ 2.5 LSB
0.74
0.925
δR1 ≤ ≈ 0.78 Ω
1.18
0.925
δR2 ≤ ≈ 7.8 Ω
0.118
Relative tolerances:
0.78 7.8
εR1 ≈ · 100% ≈ 0.078%, εR2 ≈ · 100% ≈ 0.078%
1000 10000
Conclusion:
Use approximately 0.1% resistors (or better)
T R ≈ 31.25 kbit/s
Suggested solution:
Fieldbus (Profibus PA)
Topology note:
• 2 sections (1 repeater)
• ∼ 20 nodes per section
• section length on the order of ∼ 50 m
5
• Uncertainty:
0.74 δDout + 1.3 + 1.18 δR1 + 0.118 δR2 ≤ 5
leading to δDout ≤ 2.5 LSB and εR1 ≈ εR2 ≈ 0.078%.
• Bus throughput: T R ≈ 22 kbit/s raw; with overhead select ∼ 31.25 kbit/s fieldbus (Profibus PA), optionally split into
2 sections with repeater.
Problem 2
A data acquisition system has to be developed in order to monitor the temperature θ of the modules of a Photo Voltaic (PV)
plant. The plant includes 4 strings that cover a 20 m × 20 m square area and each string is made up of 10 series-connected PV
modules. The temperature of each PV module, which is expected in the range (0–80) ◦ C, is measured by means of sensors
characterized by the following input/output relationship:
Iout = S θ + Ioff ,
where S = 100 µA/◦ C with ±0.1% relative uncertainty and Ioff = 10 mA ± 5 µA. The compliance voltage of the temperature
sensors is 1 V.
The main requirements and constraints are:
• temperature resolution: 0.1 ◦ C;
Design the data acquisition system and provide details about: conditioning circuitry, Analogue-to-Digital Converter
specifications (range, number of bit, sampling frequency), and data-communication bus.
Solution
Number of nodes
There are 4 strings and 10 modules per string, hence:
Nnodes = 4 × 10 = 40.
6
Conditioning circuitry: shunt resistor (I/V conversion)
Use a shunt resistor RS to convert current to voltage:
VADC = RS Iout .
Choose:
RS = 50 Ω.
Then:
VADC,min = 50 Ω · 10 mA = 0.5 V, VADC,max = 50 Ω · 18 mA = 0.9 V,
so:
VADC ∈ [0.5, 0.9] V.
Sampling frequency
Each node must acquire 100 readings every U R = 1 s:
100
fs,min = = 100 Sa/s.
1
Choose:
100
fs = 1 kSa/s, ∆t100 = = 0.1 s.
1000
7
Measurement model (calibration equation)
From Dout Vq = RS (Sθ + Ioff ):
Dout Vq
Sθ = − Ioff ,
RS
hence:
Dout Vq Ioff
θ= − .
RS S S
Dout Vq Ioff
Partial derivatives Using θ = − :
RS S S
∂θ Vq VF R
= = N ≈ 0.098 ◦ C/LSB,
∂Dout RS S 2 b RS S
∂θ Dout Vq
= ≈ 3.6 ◦ C/Ω (evaluated at Dout,max ),
∂RS RS2 S
◦
∂θ 1 Dout Vq C
= 2 Ioff − ≈ 8 × 105 ,
∂S S RS A/◦ C
∂θ 1
= = 104 ◦ C/A.
∂Ioff S
Uncertainty data
εS = 0.1% = 10−3 ⇒ δS = SεS = (10−4 ) · 10−3 = 10−7 A/◦ C,
δIoff = 5 µA.
Impose:
δθ ≤ 0.5◦ C.
Problem 3
The system shown measures the illuminance Ev by means of a photodiode, an operational amplifier with feedback resistor
R, and a voltmeter. The photodiode has sensitivity
The resistance R is obtained as the average of n = 10 repeated readings provided by a digital ohmmeter with range 100 kΩ
and expanded uncertainty
U (R) = 0.20% reading + 0.10% range Ω, k = 3,
obtaining
R̄ = 19.76 kΩ, uA (R) = 0.15 kΩ
(experimental standard deviation). The voltmeter is characterized by an expanded uncertainty U (V ) = 5 mV with confidence
level p = 95%. It measures the offset voltage of the whole measuring chain as
8
When the same voltmeter provides the measurement
Solution
1) Measurement model
The transimpedance stage converts the photodiode short-circuit current into a voltage:
Vout = S Ev R + Voff ,
hence
Vout − Voff
Ev = .
SR
2) Numerical estimate of Ev
Using
Vout,0 = 0.12 V, Voff,0 = −0.01 V, S0 = 50 × 10−9 A/lx, R0 = 19.76 × 103 Ω,
0.12 − (−0.01) 0.13
Ev,0 = −9
= ≈ 1.3158 × 102 lx.
3
(50 × 10 )(19.76 × 10 ) 9.88 × 10−4
Therefore,
Ev,0 ≈ 131.6 lx.
∆S 0.5
u(S) = √ = √ nA/lx ≈ 0.289 nA/lx = 0.289 × 10−9 A/lx.
3 3
Resistance R̄ (Type A + Type B). Type B (ohmmeter): first compute the expanded uncertainty at the indicated value
and range:
U (R) = 0.002 (19760) + 0.001 (100000) ≈ 39.5 + 100 = 139.5 Ω.
With k = 3:
U (R) 139.5
uB (R̄) =≈ = 46.5 Ω.
3 3
Type A (mean of n = 10 readings), with experimental standard deviation uA (R) = 0.15 kΩ = 150 Ω:
150
uA (R̄) = √ Ω ≈ 47.4 Ω.
10
Combine: q p
u(R̄) = u2B (R̄) + u2A (R̄) ≈ (46.5)2 + (47.4)2 Ω ≈ 66 Ω.
U (V ) 5 mV
u(Vout ) = u(Voff ) = = = 2.5 mV.
2 2
9
4) Uncertainty propagation with correlation
Let
Vout − Voff
Ev = f (S, R, Vout , Voff ) = .
SR
The sensitivity coefficients are
∂Ev Voff − Vout ∂Ev Voff − Vout
= , = ,
∂S S2R ∂R SR2
∂Ev 1 ∂Ev 1
= , =− .
∂Vout SR ∂Voff SR
The combined variance is
X ∂f 2 ∂f ∂f
u2 (Ev ) = u2 (xi ) + 2 ρ(Vout , Voff ) u(Vout ) u(Voff ),
i
∂xi ∂Vout ∂Voff
with xi ∈ {S, R, Vout , Voff } and all other correlations taken as zero.
Since the same voltmeter is used for both Vout and Voff , take
ρ(Vout , Voff ) = 1.
∂f 1 ∂f 1
With ∂Vout = + SR and ∂Voff = − SR and u(Vout ) = u(Voff ), the voltage terms cancel:
2 2 2
1 1 1
u2 (Vout ) + u2 (Voff ) − 2 u(Vout )u(Voff ) = 0.
SR SR SR
Therefore,
2 2
2 ∂Ev 2 ∂Ev
u (Ev ) = u (S) + u2 (R̄).
∂S ∂R
6) Final result
Ev ≈ 131.6 lx, u(Ev ) ≈ 0.88 lx (≈ 0.9 lx).
Problem 4
The system shown measures the illuminance Ev by means of a photodiode, a trans-resistance amplifier and a voltmeter.
The photodiode has been selected from a batch of 1000 devices calibrated against a reference instrument with a relative
standard uncertainty of 0.3%. The batch is characterized by an average sensitivity
S = 30 nA/lx
10
The conditioning circuitry is characterized with the switch in position 2 using a known reference current
and measuring the voltage output Vref by means of a voltmeter with range 20 V and expanded uncertainty
U (V ) = 1.0% reading + 0.5% range V, k = 3,
obtaining
Vref = 9.95 V.
Evaluate the value and the standard uncertainty of the illuminance Ev when the same voltmeter provides the measurement
Vout = 12.0 V.
Solution
1) Measurement model
With the switch in position 2, the reference current is applied to the trans-resistance:
Vref
Vref = R Iref ⇒ R= .
Iref
With the switch in position 1, the photodiode current is converted into voltage:
hence
Vout = R S Ev .
Substituting R = Vref /Iref gives
Vref Vout Iref
Vout = S Ev ⇒ Ev = .
Iref Vref S
2) Numerical estimate of Ev
Using Vout = 12.0 V, Vref = 9.95 V, Iref = 100 µA = 10−4 A, S = 30 nA/lx = 30 × 10−9 A/lx:
12.0 10−4
Ev,0 = ≈ 4.020 × 103 lx.
9.95 30 × 10−9
Therefore,
Ev,0 ≈ 4020 lx.
U (Iref ) 0.5 µA
u(Iref ) = = = 0.25 µA.
k0.95 2
Thus
0.22
U (Vout ) = 0.01(12.0) + 0.005(20) = 0.22 V ⇒ u(Vout ) = = 0.0733 V,
3
0.1995
U (Vref ) = 0.01(9.95) + 0.005(20) = 0.1995 V ⇒ u(Vref ) = = 0.0665 V.
3
11
Sensitivity. Type B (calibration against reference instrument, relative standard uncertainty 0.3%):
uB (S) = 0.003 S = 0.003 (30 × 10−9 ) = 9 × 10−11 A/lx.
Type A (batch experimental standard deviation):
uA (S) = 0.12 nA/lx = 0.12 × 10−9 A/lx.
Combine: q p
u(S) = u2A (S) + u2B (S) = (0.12 × 10−9 )2 + (9 × 10−11 )2 = 1.5 × 10−10 A/lx.
6) Final result
Ev ≈ 4020 lx, u(Ev ) ≈ 23 lx.
12