1.

Distinguish between semiconductor and conductors (2mks)

 Semiconductors are materials whose electrical conductivity lies between that of good conductors
and insulators.
 Conductors are those materials which allow current to flow through them easily/materials with free
electrons.

2. Give one example of a semiconductor and one for a conductor (2mks)

 Semiconductors-silicon,germanium
 Conductors-copper,aluminium

3. State difference between semiconductors and metallic conductors. (1mk)

 The electrical conductivity of semiconductors lie between that of conductors and insulators while
metallic conductors allow current to flow through them easily since they have mobile electrons.

4. State the effect on conductivity of increasing the temperature of a semi-conductor

 Increase in temperature increase the electrical conductivity of semiconductors. When the
temperature is raised the electrons gain more energy and are able to move from the valence band
across the forbidden gap to the conduction band

5. Name two ways of enhancing the conductivity of a semiconductor (2mks) 

Increasing the temperature
 Doping

6. Explain the effects of an increase in temperature in the conductivities of:

a) A metallic conductor (2mks)
 Increase in temperature increase the vibration of the atoms this interferes with the electron flow due
to resistance which result from increased collisions. Hence the conductivity is decreased.
b) A semi-conductor (2mks)
 Increase in temperature increases the conductivity of semiconductors. Increasing the temperature
increases the chances of electrons moving from the valence band to the conduction band. Electrical
resistance therefore reduces as the current flow is due to the flow of electrons and holes.

DOPING
7. Explain what you understand by the term doping as used in semiconductors(2mk)
 Doping is the process of adding an impurity to a pure semiconductor to improve its electrical
conductivity

8. State how the conductivity of an intrinsic semi-conductor can be improved.(1mk)

 By increasing the temperature

9. Explain the meaning of ‘donor’ and ‘acceptor’ atoms in relation to semi

Conductors.
 Donor-This is a group five element having five electrons in there outermost energy levels. Four of
the electrons participate in bonding and donates the remaining for electrical conductivity. When
Silicon is doped using Boron its three electrons on the outermost energy level participate in bonding
with the neighboring atoms while silicon will have an extra electron. This creates a missing electron
 which is treated as a hole. Such an impurity is called an acceptor impurity since it creates a hole
which can accept an electron.

 Acceptor-This is a group three element like Boron

10. Distinguish between intrinsic and extrinsic conductors (1mk)

 Intrinsic semiconductors are the pure form of semiconductor materials While extrinsic
semiconductors are impure semiconductor formed by adding an impurity to a pure semiconductor.

11. Distinguish between a p-type and an n–type extrinsic semiconductors (2mk)

 A p-type semiconductor material is formed by the addition of group III elements or we can say
trivalent impurity to a pure (intrinsic) semiconductor. On the contrary, the n-type semiconductor
material is formed by the addition of group V elements i.e., a pentavalent impurity to a pure or
intrinsic semiconductor.
12. Using examples explain the difference between n-type and p-type
semiconductor. (1mk)

 N-type semiconductors are conductors that are formed by doping (process of adding impurity atoms
to a pure or intrinsic semiconductor) a pure semiconductor such as silicon with donor or
pentavalent impurity atoms like phosphorous and arsenic in order to increase the number of charge
carriers(free electrons). The majority charge carriers in n-type semiconductors are the free
electrons. While P-type semiconductors are made by adding trivalent (acceptor atoms) such as
boron and aluminium to a pure semiconductor like silicon in order to increase the number of charge
carriers (holes). The majority charge carriers in p-type semiconductors are the holes (positive
charge)

13. What is meant by donor impurity in a semiconductor? (1 mk)

 This is a dopant having 5 electrons in its valence shell which holds the ability to donate an extra
electron present in its valence shell to the neighboring atom.

14. Sketch the crystal structure of Germanium containing a donor impurity atom.
Ge
Donor atom

Ge P Ge

e-

Ge

15. State the majority carriers for a p- type semi conductor.

 Holes

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 16. Extrinsic semiconductors are made through a process called doping. Explain
how doping produces an n-type semi-conductor (1mk)
 When a pure semiconductor is doped using a group five element like phosphorous having five
electrons in their outermost energy levels, four of the electrons participate in bonding with the
neighboring atoms while the remaining electron is used for electrical conductivity in the
semiconductor. Hence electrons will be the majority charge carriers while holes will be the minority
charge carriers this gives rise to an n-type semiconductor.

17. Briefly describe how an n-type semiconductor is made from a pure silicon
crystal.
 When a silicon is doped using a group five element like phosphorous having five electrons in their
outermost energy levels, four of the electrons participate in bonding with the neighboring atoms
while the remaining electron is used for electrical conductivity in the semiconductor. Hence
electrons will be the majority charge carriers while holes will be the minority charge carriers.
Si

Si P Si

e-

Si

18. Silicon was doped with boron to form an extrinsic semi-conductor what are the
majority charge carriers.
 Holes
19. Explain how doping produces a p-type semi-conductor from pure semi-
conductor material. (2mk
 When a pure semiconductor like silicon is doped using a group three element like boron, all the
three electrons on the outermost energy level of boron atom participate in bonding with the
neighboring atoms while silicon will have an extra electron. A vacancy will therefore exist due to the
missing electron which is responsible for the electrical conductivity of the doped semiconductor.
Hence holes are the majority charge carriers while electrons are the minority charge carriers.
20. Explain why the conductivity of a metallic conductor decreases with increase in
temperature while that of an intrinsic semiconductor increases with increase in
temperature. (2mks)
 In metals, conductivity is due to movement of free electrons. When temperature increases, the
vibration of metal ions increases this result in an increase in resistance of metal and hence, decrease
in conductivity while When the temperature of the semiconductor is raised the electrons gain more
energy and are able to move from the valence band across the forbidden gap to the conduction band
this increases the electrical conductivity of the semiconductor.

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 DIODES
1. With a well labelled diagram shows how a junction diode is formed (2 mks)

 When the P-type semiconductor is joined with the N-type, the electrons diffuse across the boundary
to neutralize the holes in the P-type. This creates fixed negative ions on the P-region and fixed
positive ions on the N-type.
 The fixed ions create a depletion layer devoid of charge carriers, which opposes further flow of
charge carriers.

2. Explain why a junction diode only conducts in one way (2 mks)

 During forward bias, the depletion layer decreases due to opposing potential difference of the cell.
However, in the reverse bias, the depletion layer increases. Therefore, only a small (leakage)
current flows in reverse bias.

3. State what is meant by breakdown voltage for a diode (1 mk)

 This is the reverse-bias voltage which when exceeded, the depletion layer is destroyed. The diode
conducts in reverse bias just as in forward bias.

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 4. Name two applications of a junction diode (2 mks) a. In rectification
circuits
b. In signal detection circuits
c. Digital display

5. Distinguish between forward bias and reverse bias connection of a diode

(2mk)
 Forward bias- the P region is connected to the positive terminal of the external source while
the n-region is connected to the negative terminal.
 Reverse bias- the P region is connected to the negative terminal of the battery while the
Nregion is connected to the positive terminal.

6. Draw a diagram to illustrate forward bias of a P-N junction (1mk)

7. Draw a circuit diagram to illustrate a forward biased p-n Junction diode.

(1mk)

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 8. You are provide with 4 diodes, A resistor, an a.c of low voltage and enough
connecting wires .In the spaces provided below, sketch the circuit diagram for a full
wave rectifier and indicate the terminals where the output voltage v may be connected.
(2mk)

9. The figure bellows shows a p-n junction diode.

p n

Complete the diagram to show the forward bias state

10. Figure (a) and (b) shows a p – n junction connected to a battery. It is observed
that the current in figure 10(a) is greater than the one in figure 10(b)

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 p n
p n
A
A

(a) (b)
State the reason for this observation (1mk)
(a) is connected in forward bias while (b) is connected in reverse bias

11. Bulb X lights while bulb Y does not. Explain. (2mks)

XY

12v 12v

 X is connected in forward bias which makes the junction to become smaller while Y is
connected in Reverse bias. Diodes conduct only in forward bias.

12. Figure shows two ways of biasing a P.N junction.

P N P N

A A

A B
(i) In which circuit will current flow? (1mk)  B
(ii) Explain your answer in (i) above.
(1mk)
 B is connected in forward bias. The connection leads to the decrease of the depletion layer
reducing the resistance to the flow of charges across the junction.

13. Figure is a circuit with 2 bulbs and components D.

D1 D2

L1 K L2

(i) State the observation made when switch K is closed. (1mk)

 L1lights while L2does not light.

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 (ii) Account for the observation made above. (1mk)
 D1is connected in forward bias, which allows current to pass through while D2 is
connected in reverse bias, which does not allow the flow of current.
(i) On the axes provided below, sketch the graph of output voltage against ti-me for the
rectifier

Output
Voltage

Time

(ii) A capacitor is now connected across the output. Explain its effect on the output.
(2mk)

14. Explain what happens to the depletion layer when diode is reverse bia
sed.
(2mks)
 The depletion layer increases. When the n- region is connected to the positive terminal, the
electrons are attracted from to the positive potential. The holes are also attracted to the
negative potential.

15. Briefly explain what happens to the depletion layer when a diode is forward
biased. (2mks)
 The depletion layer decreases. This is because the opposing external potential causes the
recombination of the fixed ions and the majority charge carriers.
16. What is a zener diode? (1mk)
 It is a diode which is designed to allow flow of current in reverse at a particular voltage.

17. Sketch a graph of forward bias characteristics of p – n junction diode.(2 mks)

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 18. Draw a circuit diagram including a cell, a diode and a resistor in the reverse
biased mode.

19. Name two uses of a junction diode. (2mks) a. In rectification circuits

b. In signal detection circuits
c. Digital display

20. A radio repairer wishes to use an ammeter to detect a faulty diode. With the aid
of a circuit diagram describe how he will go about this task.

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 A

 Connect the diode in reverse bias. Vary the resistance of the resistor. If the current varies with
the resistance, the diode is faulty.

21. In the axes provided sketch the characteristic for a forward biased p-n junction
diode.
(1mk)

Current I

0.7V

Voltage

22. The diagram below shows a junction diode.

p n

Complete the diagram to show how the diode can be connected in a reverse bias mode.
(1mk)

p n

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 1. What is rectification? (1mk)
 This is the process of converting alternating current to direct current.

2. What do you understand by term full wave rectification of A.C? ( 1 mk )

 When all the cycles of a.c are converted to d.c

3. A junction diode is used as a rectifier. Draw a simple circuit diagram to show how two junction
diodes and a centre tap transformer can be used to produce a full
wave rectified a.c (3mks)

4. Explain using a diagram how a diode can be used as a half-wave rectifier.

 During the first half cycle, the diode is forward biased. Current thus flows through the
resistor R in the direction ACR1DB. During the second half cycle, the diode is reverse
biased. No current flows through the diode and hence no current in the circuit. Hence in
one complete cycle, one half is wasted. The output will appear as shown below:

5. State two advantage of the four diode rectifier over a two diode one. ( 2mk )
(i) It is suitable for high voltage regulation
(ii) A smaller transformer can be used because there is no need for centre tapping

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 6. You are provided with a cell, a diode, a switch and a bulb. Draw a circuit diagram showing the
arrangement that will enable the bulb to light. (2mks)

7. You are provided with a diode, a resistor R, an a.c source of low voltage and connecting wires. In
the space provided, sketch the circuit diagram for a half-wave rectifier and indicate the terminals
where the output voltage v0 may be connected. (2mks)

8. You are provided with 6V a.c supply, two diodes, a transformer and a resistor.
Explain how these items may be used to provide a full wave rectification.(3mk)
Arrange the set up as shown below

 During the first half-cycle, when A is positive, D1 conducts through the load R. at the same
time B is negative with respect to T, so no current flows in the diode [Link] the next half-
cycle when B is positive, D2 conducts through the load R in the same direction as before.
A is positive with respect to T so no current flows in D1. In both cycles current flows in the
same direction through the resistor hence full wave rectification.

9. Figure shows the output of a wave from an a.c source

E.M.F

Time (s)
Using a circuit show how the above output is produced (3mks)

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  In the 1st half-cycle, diode D1 andD3 conducts. The current flows through [Link] the
2nd half-cycle, diode D2 and D3 conducts. The current flows through CBRDAC. During
both cycles, current passes through R in the same direction, giving an output signal as
shown above.

10. Fig shows a graph the output voltage of a rectifier circuit with only one diode.

Voltage

Time (s)
Sketch output voltage
— time graph for rectifier using two diodes. (2mk

1. The graph in figure below shows forward bias characteristics of a P.N junction.

O
A p.d
The depletion layer decreases from O to A. Explain what is meant by depletion layer.
 Its an insulating region within a conductive, doped semiconductor material where the mobile
charge carriers have been diffused away, or have been forced away by an electric field.

2. A student connected a circuit as shown below, hoping to produce a rectified

R CRO

(i) Sketch a graph of the output as seen on C.R.O.

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 Voltage

Time (s)

(ii) Draw a diagram to show how the output on the C.R.O could be improved.

3. A student connected a circuit as shown below, hoping to produce a rectified

output. D1

a.c

To C.R.O R
D2

(i) Sketch the graph of the output on the CRO screen. (1mk)

Voltage

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 Time (s)

(ii) Explain how this output is produced (2mks)

 In the first half circle both diodes D1 and D2 are forward biased and therefore current will
not flow through the load R (resistor). In the second half circle D2 is forward biased while
D1 is reversed biased therefore current flow from the tapping to the load through diode D2
and the half circle is completed.

(iii) State two disadvantages of this rectification. (2mks)

 A lot of power is lost due to the half circle that is phased out 
The output current is not smooth.

4. The figure below shows a rectifier circuit for an alternating current input using
four diodes

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D1 D2
 C

(i) Explain how rectification is done (3 mks)

 In the 1 half-cycle, diode D2 andD4 are forward biased. The current flows through the
st

load R. In the 2nd half-cycle, diode D3 and D1 are forward biased allowing current to
flow again through R. During both cycles, current passes through R in the same
direction, giving an output of full rectification.

(ii) State the function of the capacitor (1

mk)
 Smoothen the output.

(ii) Sketch a graph to show how the p.d. across the resistor R varies
with time.

(iii) On the same axes, sketch a wave form when a C.R.O is

connected across R when the capacitor has been removed.
(1mk)

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 5. Find the current flowing and the voltage across the 8 resistor in the
circuit.

3 ©
10V 8

 No current will flow through the resistor because diode D2 is reversed biased.

6. The figure shows a circuit used for a full wave bridge rectification.
B

D1 D4
C
A
D3 D2

C R To CRO
D

(i) Insert diodes D1, D2, D3 and D4 to complete the circuit. (2mks)
(ii) What is the use of capacitor C? (1mk)
 To smoothen the output.

(iii) On the axes below draw a voltage – time display of the rectification observed on
the C.R.O. (2mks)

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7. Below is part of a circuit that was set up by form four students of Okok Secondary
school during a physics practical lesson to demonstrate full wave rectification
using two diodes. Complete the circuit by correctly placing the load R and the
two diodes (2mks)

8. Figure below shows two identical diodes connected in a circuit.

L 1

D A

D1

L2

C B
D2

State and explain what happens to each lamp when the switch is closed. (2mk)
 Lamp L1 will light because the current is complete through the circuit DD1L1AC. Lamp L2 will not
light because it is short circuited by the connection AC.

9. Sketch curves to show the variation of current and time as displayed on the CRO
in each of the

R To CRO

Volt
age

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 R To CRO

V(V) Time t(s) (s)

10. In the circuit below, when the switch s is closed, the voltmeter shows a reading.

R V

When the cell terminals are reversed and the switch is closed, the voltmeter
reading is zero. Explain these observations.
 Initially when the switch is closed the diode was forward biased therefore current could flow
through the load hence the p.d. When the cell was reversed the diode became reversed biased and
could not allow current to flow hence the zero reading on the voltmeter.

11. In an experiment to investigate the variation of voltage with current for certain pn
Junction diode.

p.d(voltage) 0 1.0 1.2 1.4 1.6 1.8

Current (mA) 0 3.0 9.0 19.0 32.0 60.0

(i). Draw a circuit diagram that can be used to obtain results above. (3mk)
(ii). Plot a graph of current against p.d on the grid provided. (5mk)

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 iii. Find the resistance when the voltage is 1.3V

V=IR
1.13=0.03R R=37.67Ω

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