First set
1. In a p uniformly doped semiconductor sample the ionization of a dopant atom
corresponds to the:
(a) capture of an electron from the valence (c) introduction of a negative fixed charge
band
(b) release of a hole towards the conduc- (d) release of an electron towards the con-
tion band duction band
2. In a quasi neutral semiconductor where a non zero free charge gradient is present,
the diffusion current densities:
(a) of electrons and holes have the same (c) depend on the sign of the electric field
orientation (d) of electrons and holes have opposite
(b) are zero orientation
3. In an npn BJT in forward operation and with negligible Early effect, the collector
current increases
(a) as VBC increases (c) as VBC decreases
(b) as γ increases (d) as αT = b decreases
4. In a power device, terminations are used for
(a) increasing the switching speed (c) increasing the breakdown voltage
(b) reducing the Zener breakdown voltage (d) reducing Ron
5. In a LED light source
(a) stimulated emission prevails if the cur- (c) stimulated emission always prevails
rent is larger than the threshold value
(b) spontaneous emission often prevails (d) a reverse biased pn junction is used
Second set
1. Shockley equations
(a) are independent of temperature (c) depend on the intrinsic concentration
(b) depend only on the intrinsic Fermi (d) are independent of the applied voltage
level bias
2. A pseudomorphic epitaxial layer:
1
(a) is formed when an heterostructure (c) is formed when an heterostructure is
is grown between materials with the grown between materials with slightly
same lattice constant different lattice constants
(b) is formed when an heterostructure (d) is formed when an heterostructure is
is grown between materials with the grown between materials with oppo-
same doping type site doping type
3. An IGBT for power applications used as a switch typically shows
(a) horizontal current flow (c) a large static current consumption
(b) a switching velocity equal or better of from the control terminal
a power MOSFET (d) an Ron better than a power MOSFET
4. In optoelectronic devices, the quantum well is normally used for
(a) optical field confinement (c) both optical field and free carrier con-
finement
(b) free carrier confinement (d) improve stimulated emission
Third set
1. In a homogeneous semiconductor under an applied bias voltage the product between
the conduction band electron concentration and the valence band hole concentration
(a) linearly depends on the applied bias (c) depends only on temperature
(b) depends on the difference between the
electron and hole quasi Fermi levels (d) depends on the Fermi level position
2. A quantum wire is realized through:
(a) a semiconductor homostructure (c) a single heterostructure
(b) a two-dimensional free carrier confine- (d) a three-dimensional free carrier con-
ment finement
3. Consider an npn bipolar transistor. In saturation:
(a) BE junction is reverse biased, BC (c) BE junction is forward biased, BC
junction is forward biased junction is reverse biased
(b) BE junction is forward biased, BC (d) BE junction is reverse biased, BC
junction is forward biased junction is reverse biased
4. A power MOSFET for switching applications typically shows
(a) a periodic structure to improve the (b) the possibility to block both positive
maximum conduction drain current and negative VDS voltages
2
(c) horizontal current flow doped n+ region used to increase the
(d) a reduced Ron because of the heavily breakdown voltage
5. In a dielectric guide for optoelectronic applications
(a) field propagation can always be ana- (c) the optical field is confined in the re-
lyzed through geometrical optics gione where the refractive index is
(b) the optical field is confined in the re- larger
gione where the refractive index is
lower (d) propagation is always multi-mode
Fourth set
1. In a semiconductor the energy bandgap is the distance between
(a) the minimum conduction band energy (c) the minimum conduction band energy
and the free electron energy and the maximum valence band energy
(b) the maximum valence band energy and (d) the Fermi level and the free electron
the free electron energy energy
2. A lattice matched epitaxial layer is formed when an heterostructure is grown between
materials with
(a) the same lattice constant (c) slightly different lattice constants
(b) the same doping type (d) opposite doping type
3. In a power device, terminations are used for
(a) increasing the switching speed (c) increasing the breakdown voltage
(b) reducing the Zener breakdown voltage (d) reducing Ron
4. Photodetector responsivity is
(a) the ratio between the incident optical (c) proportional to the impinging light fre-
power and the generated current quency
(d) inversely proportional to the imping-
(b) proportional to the quantum efficiency ing light wavelength