MJD18002D2

Bipolar NPN Transistor

High Speed, High Gain Bipolar NPN
Power Transistor with Integrated
Collector−Emitter Diode and Built−In
Efficient Antisaturation Network
The MJD18002D2 is a state−of−the−art high speed, high gain [Link]
bipolar transistor (H2BIP). Tight dynamic characteristics and lot to lot
minimum spread (±150 ns on storage time) make it ideally suitable for POWER TRANSISTOR
light ballast applications. Therefore, there is no longer a need to
guarantee an hFE window.
2 AMPERES
1000 VOLTS, 50 WATTS
Features
• Low Base Drive Requirement
• High Peak DC Current Gain (55 Typical) @ IC = 100 mA
• Extremely Low Storage Time Min/Max Guarantees Due to the
H2BIP Structure which Minimizes the Spread
• Integrated Collector−Emitter Free Wheeling Diode
• Fully Characterized and Guaranteed Dynamic VCEsat
• Characteristics Make It Suitable for PFC Application
• Epoxy Meets UL 94 V−0 @ 0.125 in 4
• ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V 1 2
• Six Sigma® Process Providing Tight and Reproductible Parameter 3

Spreads
• Pb−Free Package is Available DPAK
CASE 369C
MAXIMUM RATINGS
STYLE 1
Rating Symbol Value Unit
Collector−Emitter Sustaining Voltage VCEO 450 Vdc
Collector−Base Breakdown Voltage VCBO 1000 Vdc MARKING DIAGRAM
Collector−Emitter Breakdown Voltage VCES 1000 Vdc
Emitter−Base Voltage VEBO 11 Vdc
Collector Current − Continuous IC 2.0 Adc YWW
Collector Current − Peak (Note 1) ICM 5.0 180
02D2G
Base Current − Continuous IB 1.0 Adc
Base Current − Peak (Note 1) IBM 2.0

THERMAL CHARACTERISTICS Y = Year

Characteristic Symbol Value Unit WW = Work Week
Total Device Dissipation @ TC = 25°C PD 50 W 18002D2 = Device Code
Derate above 25°C 0.4 W/°C G = Pb−Free Package

Operating and Storage Temperature Range TJ, Tstg −65 to +150 °C

ORDERING INFORMATION
Thermal Resistance, Junction−to−Case RqJC 5.0 °C/W
Thermal Resistance, Junction−to−Ambient RqJA 71.4 °C/W Device Package Shipping †

Maximum Lead Temperature for Soldering TL 260 °C MJD18002D2T4 DPAK 3000/Tape & Reel
Purposes: 1/8″ from Case for 5 seconds
MJD18002D2T4G DPAK 3000/Tape & Reel
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not (Pb−Free)
normal operating conditions) and are not valid simultaneously. If these limits are †For information on tape and reel specifications,
exceeded, device functional operation is not implied, damage may occur and including part orientation and tape sizes, please
reliability may be affected. refer to our Tape and Reel Packaging Specifications
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle = 10%. Brochure, BRD8011/D.

© Semiconductor Components Industries, LLC, 2006 1 Publication Order Number:

January, 2006 − Rev. 2 MJD18002D2/D
 MJD18002D2

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic Symbol Min Typ Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Collector−Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) VCEO(sus) 450 570 − Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Collector−Base Breakdown Voltage (ICBO = 1 mA) VCBO 1000 1100 − Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Emitter−Base Breakdown Voltage (IEBO = 1 mA) VEBO 11 14 − Vdc
mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Collector Cutoff Current (VCE = Rated VCEO, IB = 0) ICEO − − 100
mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ
ÎÎÎ
Collector Cutoff Current (VCE = Rated VCES, VEB = 0) @ TC = 25°C ICES − − 100
@ TC = 125°C − − 500

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCE = 500 V, VEB = 0) @ TC = 125°C − − 100

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter−Cutoff Current (VEB = 10 Vdc, IC = 0) IEBO − − 500 mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ON CHARACTERISTICS
Base−Emitter Saturation Voltage VBE(sat) Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
(IC = 0.4 Adc, IB = 40 mAdc) @ TC = 25°C − 0.78 1.0

ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
(IC = 1.0 Adc, IB = 0.2 Adc) @ TC = 25°C − 0.87 1.1

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Collector−Emitter Saturation Voltage @ TC = 25°C VCE(sat) − 0.36 0.6 Vdc
(IC = 0.4 Adc, IB = 40 mAdc) @ TC = 125°C − 0.50 1.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ
(IC = 1.0 Adc, IB = 0.2 Adc) @ TC = 25°C − 0.40 0.75
@ TC = 125°C − 0.65 1.2

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ @ TC = 25°C hFE 14 25 −

ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
−
(IC = 0.4 Adc, VCE = 1.0 Vdc) @ TC = 125°C 8.0 15 −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
(IC = 1.0 Adc, VCE = 1.0 Vdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
@ TC = 25°C
@ TC = 125°C
6.0
4.0
10
6.0
−
−

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz) ft − 13 − MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz) Cob − 50 100 pF

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Input Capacitance (VEB = 8 Vdc) Cib − 340 500 pF
DIODE CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎ
Forward Diode Voltage

ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
(IEC = 1.0 Adc)ÎÎÎ
ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ ÎÎÎ
@ TC = 25°C
VEC
− 1.2 1.5
Vdc

ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
(IEC = 0.4 Adc) @ TC = 25°C − 1.0 1.3

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
@ TC = 125°C − 0.6 −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ
Forward Recovery Time tfr ns
(IF = 0.4 Adc, di/dt = 10 A/ms) @ TC = 25°C − 517 −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
(IF = 1.0 Adc, di/dt = 10 A/ms)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
@ TC = 25°C − 480 −

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
DYNAMIC SATURATION VOLTAGE
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
Dynamic Saturation Voltage ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎ
IC = 0.4 Adc
IB1 = 40 mA
@ 1 ms

@ 3 ms
@ TC = 25°C

@ TC = 25°C
VCE(dsat) −

−
7.4

2.5
−

−
V

ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Determinated 1 ms and 3 ms VCC = 300 Vdc
respectively after rising IB1 reaches @ 1 ms @ TC = 25°C − 11.7 −

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
IC = 1 Adc
90% of final IB1 IB1 = 0.2 A
VCC = 300 Vdc @ 3 ms @ TC = 25°C − 1.3 −

[Link]
2
 MJD18002D2

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic Symbol Min Typ Max Unit

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SWITCHING CHARACTERISTICS: Resistive Load (D.C.S. 10%, Pulse Width = 40 ms)

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Turn−on Time
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ @ TC = 25°C ton − 225 350 ns

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
IC = 0.4 Adc, IB1 = 40 mAdc @ TC = 125°C − 375 −
IB2 = 200 mAdc

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Turn−off Time VCC = 300 Vdc @ TC = 25°C toff 0.8 − 1.1 ms
@ TC = 125°C − 1.5 −

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Turn−on Time

ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ @ TC = 25°C ton − 100 150 ns

ÎÎÎÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ
IC = 1.0 Adc, IB1 = 0.2 Adc @ TC = 125°C − 94 −
IB2 = 0.5 Adc

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Turn−off Time VCC = 300 Vdc @ TC = 25°C toff 0.95 − 1.25 ms
@ TC = 125°C − 1.5 −

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 mH)

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Fall Time

ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎ
@ TC = 25°C
@ TC = 125°C
tf −
−
130
120
175
−
ns

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
IC = 0.4 Adc
Storage Time @ TC = 25°C ts 0.4 − 0.7 ms
IB1 = 40 mAdc

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
@ TC = 125°C − 0.7 −
IB2 = 0.2 Adc

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ
Cross−over Time @ TC = 25°C tc − 110 175 ns
@ TC = 125°C − 100 −

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Fall Time

ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎ IC = 0.8 Adc
@ TC = 25°C
@ TC = 125°C
tf −
−
130
140
175
−
ns

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
Storage Time @ TC = 25°C ts 2.1 − 2.4 ms
IB1 = 160 mAdc @ TC = 125°C − 3.0 −

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
IB2 = 160 mAdc
Cross−over Time @ TC = 25°C tc − 275 350 ns

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ
@ TC = 125°C − 350 −

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Fall Time @ TC = 25°C tf − 100 150 ns
@ TC = 125°C − 100 −

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Storage Time
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ IC = 1.0 Adc @ TC = 25°C ts − 1.05 1.2 ms

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
IB1 = 0.2 Adc @ TC = 125°C − 1.45 −
IB2 = 0.5 Adc

ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Cross−over Time @ TC = 25°C tc − 100 150 ns
@ TC = 125°C − 115 −

[Link]
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 MJD18002D2

Typical Static Characteristics

100 100
VCE = 1 V VCE = 5 V
hFE, DC CURRENT GAIN

hFE, DC CURRENT GAIN

80 80
TJ = 125°C TJ = 125°C

60 60
25°C 25°C

40 40
−20°C −20°C

20 20

0 0
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 1. DC Current Gain @ 1 V Figure 2. DC Current Gain @ 5 V

4 100
TJ = 25°C
IC/IB = 20
VCE, VOLTAGE (VOLTS)

VCE, VOLTAGE (VOLTS)

3
2A 10
1A 1.5 A
2

400 mA 1
1 25°C
TJ = 125°C

IC = 200 mA
−20°C
0 0.1
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10
IB, BASE CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 3. Collector Saturation Region Figure 4. Collector−Emitter Saturation Voltage

100 10

IC/IB = 10 IC/IB = 5
VCE, VOLTAGE (VOLTS)

VCE, VOLTAGE (VOLTS)

10

1
25°C TJ = 125°C 25°C
TJ = 125°C

0.1 −20°C 0.1 −20°C

0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 5. Collector−Emitter Saturation Voltage Figure 6. Collector−Emitter Saturation Voltage

[Link]
4
 MJD18002D2

Typical Static Characteristics

10 10
IC/IB = 5 IC/IB = 10
VBE, VOLTAGE (VOLTS)

VBE, VOLTAGE (VOLTS)

1 −20°C 1 −20°C

25°C 25°C

TJ = 125°C TJ = 125°C

0.1 0.1
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 7. Base−Emitter Saturation Region Figure 8. Base−Emitter Saturation Region

IC/IB = 5 IC/IB = 10

10 10

IC/IB = 20 FORWARD DIODE VOLTAGE (VOLTS)

VBE, VOLTAGE (VOLTS)

VEC(V) = −20°C
1 −20°C 1

25°C
125°C 25°C
TJ = 125°C

0.1 0.1
0.001 0.01 0.1 1 10 0.01 0.1 1 10
IC, COLLECTOR CURRENT (AMPS) REVERSE EMITTER−COLLECTOR CURRENT (AMPS)

Figure 9. Base−Emitter Saturation Region Figure 10. Forward Diode Voltage

IC/IB = 20

Typical Switching Characteristics

1000 3000
TJ = 25°C TJ = 125°C
Cib (pF)
f(test) = 1 MHz TJ = 25°C
2500
C, CAPACITANCE (pF)

100 2000 IC/IB = 10

t, TIME (ms)

IBon = IBoff
VCC = 300 V
Cob (pF) 1500 PW = 40 ms

10 1000

500
IC/IB = 5
1 0
1 10 100 0.1 0.4 0.7 1 1.3 1.6
VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (AMPS)

Figure 11. Capacitance Figure 12. Resistive Switch Time, ton

[Link]
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 MJD18002D2

Typical Switching Characteristics

5.5 3
TJ = 125°C IBon = IBoff
5.0 TJ = 25°C TJ = 125°C
VCC = 300 V
4.5 PW = 40 ms 2.5
TJ = 25°C
t, TIME (ms)

t, TIME (ms)
4.0
IC/IB = 10
3.5 2

3.0 IBon = IBoff,

IC/IB = 5 VCC = 15 V,
2.5 1.5
VZ = 300 V
2.0 LC = 200 mH

1.5 1
0.1 0.4 0.7 1 1.3 1.6 0 0.5 1 1.5
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 13. Resistive Switch Time, toff Figure 14. Inductive Storage Time, tsi @ IC/IB = 5

700 4
TJ = 125°C IC/IBon = 5 TJ = 125°C IBon = IBoff,
600 TJ = 25°C TJ = 25°C VCC = 15 V,
IBon = IBoff, VZ = 300 V
3
500 VCC = 15 V, tc LC = 200 mH
VZ = 300 V
t, TIME (ms)

IC = 1 A
t, TIME (ms)

400 LC = 200 mH
2
300
tfi
200
1 IC = 300 mA
100

0 0
0 0.5 1 1.5 3 6 9 12 15
IC, COLLECTOR CURRENT (AMPS) hFE, FORCED GAIN

Figure 15. Inductive Switching, tc & tfi @ IC/IB = 5 Figure 16. Inductive Storage Time

1000 1800
TJ = 125°C TJ = 125°C
TJ = 25°C TJ = 25°C
800
IBon = IBoff, IBon = IBoff,
tfi, FALL TIME (ns)

IC = 1 A
VCC = 15 V, 1200 VCC = 15 V,
t, TIME (ms)

600 VZ = 300 V VZ = 300 V IC = 1 A

LC = 200 mH LC = 200 mH

400
600

200 IC = 0.3 A

IC = 0.3 A
0 0
3 5 7 9 11 13 15 3 6 9 12 15
hFE, FORCED GAIN hFE, FORCED GAIN

Figure 17. Inductive Fall Time Figure 18. Inductive Cross−Over Time

[Link]
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 MJD18002D2

Typical Switching Characteristics

1600 1.6
IBon = IBoff,
VCC = 15 V,
IC/IB = 5
VZ = 300 V TJ = 125°C
1200 1.2
LC = 200 mH TJ = 25°C
t, TIME (ms)

t, TIME (ms)
tc
800 0.8

tfi IBoff = IC/2,

400 0.4 VCC = 15 V, IC/IB = 10
TJ = 125°C VZ = 300 V
TJ = 25°C LC = 200 mH
0 0
0.3 0.7 1.1 1.5 0 0.5 1 1.5
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 19. Inductive Switching Time, Figure 20. Inductive Switching Time, tsi
tfi & TC @ G = 10

200 300
TJ = 125°C IBoff = IC/2, TJ = 125°C
IBoff = IC/2,
TJ = 25°C VCC = 15 V, TJ = 25°C
VCC = 15 V,
VZ = 300 V 250
VZ = 300 V
LC = 200 mH
LC = 200 mH
150
t, TIME (ms)

t, TIME (ms)

200 IC/IB = 10

150
100 IC/IB = 5

100
IC/IB = 10
IC/IB = 5
50 50
0 0.5 1 1.5 0 0.5 1 1.5
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 21. Inductive Storage Time, tfi Figure 22. Inductive Storage Time, tc

2.4
IBon = IBoff, IB = 200 mA
2.2 VCC = 15 V,
CROSS−OVER TIME (ns)

VZ = 300 V
2.0 LC = 200 mH
IB = 50 mA
1.8
IB = 500 mA
1.6
IB = 100 mA
1.4

1.2

1
0 0.4 0.8 1.2 1.6
hFE, FORCED GAIN

Figure 23. Inductive Storage Time, tsi Figure 24. Dynamic Saturation Voltage
Measurements

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 MJD18002D2

Typical Switching Characteristics

10
9 IC tfi 90% IC
8
tsi
7
6
10% Vclamp
5 Vclamp 10% IC
tc
4
90% IB1
3 IB
2
1
0
0 1 2 3 4 5 6 7 8
TIME
Figure 25. Inductive Switching Measurements

Table 1. Inductive Load Switching Drive Circuit

+15 V
IC PEAK
1 mF 100 W MTP8P10 100 mF
150 W
3W 3W VCE PEAK

MTP8P10 VCE
MPF930 RB1
MUR105 IB1
+10 V MPF930 Iout IB
A
IB2
50 RB2
W MJE210
COMMON MTP12N10 V(BR)CEO(sus) Inductive Switching RBSOA
150 W
L = 10 mH L = 200 mH L = 500 mH
500 mF 3W
RB2 = ∞ RB2 = 0 RB2 = 0
VCC = 20 Volts VCC = 15 Volts VCC = 15 Volts
1 mF IC(pk) = 100 mA RB1 selected for RB1 selected for
desired IB1 desired IB1
−Voff

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 MJD18002D2

12 10

IC, COLLECTOR CURRENT (AMPS)

VFRM
VFR (1.1 VF) Unless
10 ms 1 ms
10
VF Otherwise Specified

DC 5 ms 1 ms 50 ms
8 1
VF

EXTENDED SOA
0.1 VF
tfr
6

4 0.1
IF

2 10% IF

0 0.01
0 2 4 6 8 10 10 100 1000
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 26. tfr Measurement Figure 27. Forward Bias Safe Operating Area

2.5 1
IC, COLLECTOR CURRENT (AMPS)

TC = 125°C

POWER DERATING FACTOR

Gain = 4 Second Breakdown Derating
2 LC = 500 mH 0.8

1.5 0.6
VBE(off) = −1.5 V

1 0.4 Thermal Derating

VBE(off) = −5 V
0.5 0.2
VBE = 0 V
0 0
0 200 400 600 800 1000 1200 20 40 60 80 100 120 140 160
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) TC, CASE TEMPERATURE (°C)

Figure 28. Reverse Bias Safe Operating Area Figure 29. Forward Bias Power Derating

There are two limitations on the power handling ability of Figure 27 may be found at any case temperature by using the
a transistor: average junction temperature and second appropriate curve on Figure 29.
breakdown. Safe operating area curves indicate IC−VCE TJ(pk) may be calculated from the data in Figure 30. At any
limits of the transistor that must be observed for reliable case temperatures, thermal limitations will reduce the power
operation; i.e., the transistor must not be subjected to greater that can be handled to values less than the limitations
dissipation than the curves indicate. The data of Figure 27 is imposed by second breakdown. For inductive loads, high
based on TC = 25°C; TJ(pk) is variable depending on power voltage and current must be sustained simultaneously during
level. Second breakdown pulse limits are valid for duty turn−off with the base to emitter junction reverse biased. The
cycles to 10% but must be derated when TC > 25°C. Second safe level is specified as a reverse biased safe operating area
Breakdown limitations do not derate the same as thermal (Figure 28). This rating is verified under clamped conditions
limitations. Allowable current at the voltages shown on so that the device is never subjected to an avalanche mode.

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 MJD18002D2

RESISTANCE (NORMALIZED) 0.5

r(t) TRANSIENT THERMAL

0.2
0.1
0.05
0.1 RqJC(t) = r(t) RqJC
0.02 P(pk) RqJC = 55°/W MAX
0.01 t1 D CURVES APPLY FOR POWER
t2 PULSE TRAIN SHOWN
READ TIME AT t1
SINGLE PULSE DUTY CYCLE, D = t1/t2 TJ(pk) − TC = P(pk)RqJC(t)

0.01
0.01 0.1 1 10 100 1000

t, TIME (ms)

Figure 30. Typical Thermal Response (ZqJC(t)) for MJD18002D2

1100 440
di/dt = 10 A/ms
1000 BVCER (Volts) @ 10 mA 420 TC = 25°C

900 400

800 TJ = 25°C 380

700 360

600 340
BVCER(sus) @ 200 mA
500 320

400 300
10 100 1000 10,000 100,000 0 0.5 1 1.5 2
RBE () IF, FORWARD CURRENT (AMPS)

Figure 31. BVCER Figure 32. Forward Recovery Time, tfr

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 MJD18002D2

PACKAGE DIMENSIONS

DPAK
CASE 369C
ISSUE O

NOTES:
−T− SEATING
PLANE 1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
B C 2. CONTROLLING DIMENSION: INCH.

V R E INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.235 0.245 5.97 6.22
B 0.250 0.265 6.35 6.73
4
C 0.086 0.094 2.19 2.38
Z D 0.027 0.035 0.69 0.88
A
E 0.018 0.023 0.46 0.58
S F 0.037 0.045 0.94 1.14
1 2 3
U G 0.180 BSC 4.58 BSC
K H 0.034 0.040 0.87 1.01
J 0.018 0.023 0.46 0.58
K 0.102 0.114 2.60 2.89
F L 0.090 BSC 2.29 BSC
J
R 0.180 0.215 4.57 5.45
L H S 0.025 0.040 0.63 1.01
U 0.020 −−− 0.51 −−−
D 2 PL V 0.035 0.050 0.89 1.27
Z 0.155 −−− 3.93 −−−
G 0.13 (0.005) M T
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR

SOLDERING FOOTPRINT*

6.20 3.0
0.244 0.118
2.58
0.101

5.80 1.6 6.172

0.228 0.063 0.243

SCALE 3:1 ǒinches

mm Ǔ

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

Six Sigma is a registered trademark and servicemark of Motorola, Inc.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

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[Link] MJD18002D2/D
11