IS/ISO 9002 IS / IECQC 700000

Continental Device India Limited Lic# QSC/L- 000019.2 IS / IECQC 750100

An IS/ISO 9002 and IECQ Certified Manufacturer

PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC 556, A, B

BC 557, 8, A, B, C
Boca Semiconductor Corp. TO-92
EBC
BSC
[Link]

APPLICATION
PNP General Purpose Transistors, Especially Suited For Use in Driver Stages of Audio
Amplifier, Low Noise Input Stages of Tape Recorders, HI-FI Amplifiers, Signal Processing
Circuits of Television Receivers.

ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C unless otherwise specified)

DESCRIPTION SYMBOL BC556 BC557 BC558 UNITS
Collector -Emitter Voltage VCEO 65 45 30 V
Collector -Emitter Voltage VCES 80 50 30 V
Collector -Base Voltage VCBO 80 50 30 V
Emitter -Base Voltage VEBO 5.0 V
Collector Current Continuous IC 100 mA
Peak ICM 200 mA
Base Current -Peak IBM 200 mA
Emitter Current- Peak IEM 200 mA
Power Dissipation@ Ta=25 degC PTA 500 mW
Derate Above 25 deg C 4.0 mW/deg C
Storage Temperature Tstg -65 to +150 deg C
Junction Temperature Tj 150 deg C

THERMAL RESISTANCE
Junction to Ambient Rth(j-a) 250 deg C/W
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION SYMBOL TEST CONDITION BC556 BC557 BC558 UNITS
Collector -Emitter Voltage VCEO IC=2mA,IB=0 >65 >45 >30 V
Collector -Base Voltage VCBO IC=[Link]=0 >80 >50 >30 V
Emitter-Base Voltage VEBO IE=100uA, IC=0 ALL >5.0 V
Collector-Cut off Current ICBO VCB=30V, IE=0 ALL <15 nA

Tj=150 deg C
VCB=30V, IE=0 ALL <5.0 uA
ICES VCE=80V, VBE=0 <15 - - nA
VCE=50V, VBE=0 - <15 - nA
VCE=30V, VBE=0 - - <15 nA

TJ=125 deg C
Collector-Cut off Current ICES VCE=80V, VBE=0 <4.0 - - uA
VCE=50V, VBE=0 - <4.0 uA
VCE=30V, VBE=0 - - <4.0 uA

Continental Device India Limited Data Sheet Page 1 of 4

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) BC556-558
DESCRIPTION SYMBOL TEST CONDITION VALUE UNITS
DC Current Gain hFE IC=10uA,VCE=5V A typ90
B typ150
C typ270
IC=2mA,VCE=5V BC556 75-475
BC557,8 75-800
A 110-220
B 200-450
C 420-800
IC=100mA,VCE=5V A typ120
B typ200
C typ400
Collector Emitter Saturation Voltage VCE(Sat) IC=10mA,IB=0.5mA <0.30 V
IC=100mA,IB=5mA <0.65 V
Base Emitter Saturation Voltage VBE(Sat) IC=10mA,IB=0.5mA typ0.70 V
IC=100mA,IB=5mA typ0.90 V
Base Emitter on Voltage VBE(on) IC=2mA,VCE=5V 0.55-0.70 V
IC=10mA,VCE=5V <0.82 V
DYNAMIC CHARACTERISTICS
Transistors Frequency ft IC=10mA, VCE=5V typ150 MHz
f=100MHz
Collector out-put Capacitance Ccbo VCB=10V, f=1MHz <6.0 pF
Emitter Input Capacitance Cib VEB=0.5V, f=1MHz typ9.0 pF
Noise Figure NF IC=0.2mA, VCE=5V <10 dB
Rs=2kohm, f=1kHZ
B=200Hz

ALL f=1KHz
Small Signal Current Gain hfe IC=2mA, VCE=5V A typ220
B typ330
C typ600
Input Impedance hie IC=2mA, VCE=5V A 1.6-4.5 khoms
B 3.2-8.5
C 6.0-15
Voltage Feedback Ratio hre IC=2mA, VCE=5V A typ1.5 X`10-4
B typ2.0
C typ3.0
Out put Adimttance hoe IC=2mA, VCE=5V A <30 umhos
B <60
C <110

Boca Semiconductor Corp.

BSC
[Link]

Continental Device India Limited Data Sheet Page 2 of 4

 TO-92 Plastic Package
B TO-92 Transistors on Tape and Ammo Pack
Amm o Pack Style
D
M EC H AN IC AL D ATA Ad hesive Tape o n Top Side FEE
C arrier
Strip
A
P
T (p)
h h A1 FL AT SIDE
LA BE L
3 2 1 A 8.2"

H1 W2
H0
L Wo W1
W

t1 1 3"
K

F1 F2
t Do
F 1 .7 Flat S id e o f Tra nsis tor and
7"
P2 Ad hesive Tape V isible
D Po 20 00 pcs./A m m o P ack

1 All dim ensions in m m unless specified otherwise

2 SPEC IFICAT ION
3
E

ITEM SYM BO L REM ARKS

D A A M IN. NO M . M AX. TO L .
BOD Y W IDT H A1 4.0 4.8
G SEC AA BOD Y H EIG HT A 4.8 5.2
BOD Y T HICKNESS T 3.9 4.2
PITCH OF COM PO NENT P 12.7 ±1
FEED HO LE PITCH Po 12.7 ± 0.3 CUM U LATIVE PIT CH
ERRO R 1.0 m m /20
DIM MIN. MAX. FEED HO LE CENTR E TO PITCH
F F CO M PONENT CENTR E P2 6.35 ± 0.4 TO BE M EASURED AT
A 4.32 5.33 BOT TOM O F C LINCH
DISTAN CE BET WEEN O UTER +0.6
LEADS F 5.08 -0.2
B 4.45 5.20 CO M PONENT ALIGN M EN T h 0 1 AT TO P OF BODY
H

3 2 1 C 3.18 4.19 TAPE W IDTH W 18 ± 0.5

HO LD-D OW N TAPE W IDT H Wo 6 ± 0.2
HO LE PO SITIO N W1 9 +0.7
D 0.41 0.55 -0.5
All diminsions in mm.

E 0.35 0.50 HO LD-D OW N TAPE PO SIT ION W2 0.5 ± 0.2

LEAD W IRE CLINCH H EIG HT Ho 16 ± 0.5
F 5 DEG CO M PONENT HEIGH T H1 23.25
LENG TH O F SNIPPED LEAD S L 11.0
PIN CONFIGURATION G 1.14 1.40 FEED HO LE DIAM ETER Do 4 ± 0.2
TO TAL TAPE TH ICKNESS t 1.2 t1 0.3 - 0 .6
1. EMITTER H 1.14 1.53 LEAD - TO - LEAD DISTAN CEF1, F2 2.54 +0.4
2. BASE -0.1
K 12.70 — CLINC H HEIGH T H2 3
3. COLLECTOR PULL - O UT FO RCE (P) 6N
N OT ES
1 . M A X IM U M A L IG N M E N T D E V IAT IO N B E T W E E N L E A D S N O T TO B E G R E AT E R T H A N 0 .2 m m .
2 . M A X IM U M N O N -C U M U L AT IV E VA R IAT IO N B E T W E E N TA P E F E E D H O L E S S H A L L N O T E X C E E D 1 m m IN 2 0
P IT C H E S .
3 . H O L D D O W N TA P E N O T T O E X C E E D B E Y O N D T H E E D G E (S ) O F C A R R IE R TA P E A N D T H E R E S H A L L B E N O
E X P O S U R E O F A D H E S IV E .
4 . N O M O R E T H A N 3 C O N S E C U T IV E M IS S IN G C O M P O N E N T S A R E P E R M IT T E D .
5 . A TA P E T R A IL E R , H AV IN G AT L E A S T T H R E E F E E D H O L E S A R E R E Q U IR E D A F T E R T H E L A S T C O M P O N E N T.
6 . S P L IC E S S H A L L N O T IN T E R F E R E W IT H T H E S P R O C K E T F E E D H O L E S .

Boca Semiconductor Corp.

BSC
[Link]

Packing Detail
PACKAGE STANDARD PACK INNER CARTON BOX OUTER CARTON BOX
Details Net Weight/Qty Size Qty Size Qty Gr Wt
TO-92 Bulk 1K/polybag 200 gm/1K pcs 3" x 7.5" x 7.5" 5.0K 17" x 15" x 13.5" 80.0K 23 kgs
TO-92 T&A 2K/ammo box 645 gm/2K pcs 12.5" x 8" x 1.8" 2.0K 17" x 15" x 13.5" 32.0K 12.5 kgs

Continental Device India Limited Data Sheet Page 3 of 4