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2SC4927 NPN Power Transistor Specs

This document provides product specifications for the 2SC4927 silicon NPN power transistor from Inchange Semiconductor. The transistor is in a TO-3PML package and is intended for applications like TV and character display horizontal deflection output. It has a collector-emitter voltage rating of 1500V and can handle currents up to 8A continuously and 18A surge. Key electrical characteristics are also provided such as an DC current gain of 25 typically and saturation voltages of 5V and 1.5V.

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Freddy Peters
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5 views4 pages

2SC4927 NPN Power Transistor Specs

This document provides product specifications for the 2SC4927 silicon NPN power transistor from Inchange Semiconductor. The transistor is in a TO-3PML package and is intended for applications like TV and character display horizontal deflection output. It has a collector-emitter voltage rating of 1500V and can handle currents up to 8A continuously and 18A surge. Key electrical characteristics are also provided such as an DC current gain of 25 typically and saturation voltages of 5V and 1.5V.

Uploaded by

Freddy Peters
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

Inchange Semiconductor

Product Specification

2SC4927

Silicon NPN Power Transistors

DESCRIPTION
With TO-3PML package
Built-in damper diode
High breakdown voltage
APPLICATIONS
TV/Character display horizontal deflection
output applications
PINNING
PIN

DESCRIPTION

Base

Collector

Emitter

Fig.1 simplified outline (TO-3PML) and symbol

Absolute maximum ratings(Ta=25)


SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

1500

Collector current

IC(peak)

Collector current-peak

IC(surge)

Collector current-surge

18

Io

C to E diode forward current

PC

Collector power dissipation

50

Tj

Junction temperature

150

Tstg

Storage temperature

-55~150

VCEO

Collector-emitter voltage

Open base

VEBO

Emitter-base voltage

Open collector

IC

TC=25

Inchange Semiconductor

Product Specification

2SC4927

Silicon NPN Power Transistors

CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
V(BR)EBO

PARAMETER

CONDITIONS

MIN

TYP.

MAX

Emitter-base breakdown voltage

IE=500mA ;IC=0

ICES

Collector cut-off current

VCE=1500V; RBE=0

0.5

hFE

DC current gain

IC=1A ; VCE=5V

25

VCE(sat)

Collector-emitter saturation voltage

IC=6A ; IB=1.2A

VBE(sat)

Base-emitter saturation voltage

IC=6A ; IB=1.2A

1.5

Diode forward voltage

IF=8A

2.0

Fall time

ICP=6A; fH=31.5kHz
IB1=1.2A;IB2=-2.4A

0.5

VECF
tf

UNIT
V
mA

Inchange Semiconductor

Product Specification

2SC4927

Silicon NPN Power Transistors


PACKAGE OUTLINE

Fig.2 outline dimensions (unindicated tolerance:0.10 mm)

Inchange Semiconductor

Product Specification

2SC4927

Silicon NPN Power Transistors

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