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2SD234 NPN Power Transistor Specs

The document provides the product specification for Inchange Semiconductor's 2SD234 silicon NPN power transistor. Key details include that it has a TO-220 package and is intended for use in low frequency power amplifiers and switching applications. The specification lists the transistor's absolute maximum ratings and typical characteristics such as collector-emitter breakdown voltage, saturation voltage, current gain, and transition frequency.

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28 views3 pages

2SD234 NPN Power Transistor Specs

The document provides the product specification for Inchange Semiconductor's 2SD234 silicon NPN power transistor. Key details include that it has a TO-220 package and is intended for use in low frequency power amplifiers and switching applications. The specification lists the transistor's absolute maximum ratings and typical characteristics such as collector-emitter breakdown voltage, saturation voltage, current gain, and transition frequency.

Uploaded by

vdăduică
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SD234

DESCRIPTION With TO-220 package Complement to type 2SB434 APPLICATIONS For low frequency power amplifier and switching applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION

Absolute maximum ratings(Ta=25)


SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current CONDITIONS Open emitter Open base Open collector VALUE 60 50 6 3 1.5 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 25 150 -55~150 W UNIT V V V A

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors


CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE COB fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=5mA ,IB=0 IC=1mA ,IE=0 IE=1mA ,IC=0 IC=3A; IB=0.3A IC=3A; IB=0.3A VCB=40V; IE=0 VEB=4V; IC=0 IC=0.5A ; VCE=1V IE=0 ; VCB=10V,f=1MHz IC=0.5A ; VCE=10V 40 90 3 MIN 50 60 6 TYP.

2SD234

MAX

UNIT V V V

1.2 1.5 10 10 240

V V A A

pF MHz

R

hFE Classifications O 70-140 Y 120-240

40-80

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors


PACKAGE OUTLINE

2SD234

Fig.2 Outline dimensions(unindicated tolerance:0.10 mm)

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