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2SC1667 NPN Power Transistor Specs

The document provides a product specification for Inchange Semiconductor's 2SC1667 silicon NPN power transistor. Key details include: - It has a TO-3 package and is suitable for high power audio amplifiers and switching regulators due to its low saturation voltage and safe operating area. - Absolute maximum ratings include a collector-base voltage of 90V, collector current of 4A, and junction temperature of 175°C. - Electrical characteristics are specified, such as a collector-emitter sustaining voltage of 90V minimum, saturation voltage of 1.0-1.5V, and DC current gain of 200 minimum.

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Juan Alamada Reynoso
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5 views3 pages

2SC1667 NPN Power Transistor Specs

The document provides a product specification for Inchange Semiconductor's 2SC1667 silicon NPN power transistor. Key details include: - It has a TO-3 package and is suitable for high power audio amplifiers and switching regulators due to its low saturation voltage and safe operating area. - Absolute maximum ratings include a collector-base voltage of 90V, collector current of 4A, and junction temperature of 175°C. - Electrical characteristics are specified, such as a collector-emitter sustaining voltage of 90V minimum, saturation voltage of 1.0-1.5V, and DC current gain of 200 minimum.

Uploaded by

Juan Alamada Reynoso
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SC1667

DESCRIPTION With TO-3 package Low collector saturation voltage Excellent safe operating area APPLICATIONS For use in high power audio amplifier applications and high voltage switching regulator circuits
PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION

Absolute maximum ratings(Ta=)


SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total Power Dissipation Junction temperature Storage temperature TC=75 Open emitter Open base Open collector CONDITIONS VALUE 90 90 7 4 50 175 -55~175 UNIT V V V A W

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors


CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBE sat ICBO IEBO hFE fT PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=50mA ;IB=0 IE=1mA ;IC=0 IC=3A; IB=0.3A IC=3A; IB=0.3A VCB=90V; IE=0 VEB=7V; IC=0 IC=1A ; VCE=4V IC=0.5A ; VCE=10V 40 MIN 90 7

2SC1667

TYP.

MAX

UNIT V V

1.0 1.5 0.1 0.1 200 10

V V mA mA

MHz

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors


PACKAGE OUTLINE

2SC1667

Fig.2 outline dimensions (unindicated tolerance:0.10mm)

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