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TLP620

O documento descreve os fotocopladores TLP620, TLP620-2 e TLP620-4 da TOSHIBA, que consistem em um foto-transistor acoplado a diodos emissores de infravermelho de arseneto de gálio. Os dispositivos oferecem diferentes configurações de canais isolados, com especificações de tensão e corrente, e são destinados a aplicações em controladores programáveis e telecomunicações. O documento também inclui informações sobre características elétricas, condições de operação e restrições de uso dos produtos.

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David da Mota
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0% acharam este documento útil (0 voto)
4 visualizações9 páginas

TLP620

O documento descreve os fotocopladores TLP620, TLP620-2 e TLP620-4 da TOSHIBA, que consistem em um foto-transistor acoplado a diodos emissores de infravermelho de arseneto de gálio. Os dispositivos oferecem diferentes configurações de canais isolados, com especificações de tensão e corrente, e são destinados a aplicações em controladores programáveis e telecomunicações. O documento também inclui informações sobre características elétricas, condições de operação e restrições de uso dos produtos.

Enviado por

David da Mota
Direitos autorais
© All Rights Reserved
Levamos muito a sério os direitos de conteúdo. Se você suspeita que este conteúdo é seu, reivindique-o aqui.
Formatos disponíveis
Baixe no formato PDF ou leia on-line no Scribd
TOSHIBA TLP620,TLP620-2,TLP620-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP620, TLP620-2, TLP620-4 PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE TELECOMMUNICATION ‘The TOSHIBA TLP620, -2 and ~4 consists of a photo-transistor optically coupled to two gallium arsenide infrared emitting diode connected in inverse parallel. ‘The TLP620-2 offers two isolated channels in an eight lead plastic DIP, while the TLP620-4 provides four isolated channels in a sixteen plastic DIP. © Collector-Emitter Voltage: 55V (Min.) © Current Transfer Ratio 50% (Min.) Rank GB : 100% (Min.) PIN CONFIGURATIONS (TOP VIEW) TLP620 "TLP620-2 TLP620-4 1 401 2 3 2 1: ANODE CATHODE 3 2: CATHODE ANODE 4 3: EMITTER 4: COLLECTOR 1, 3: ANODE CATHODE 2, 4: CATHODE ANODE 5,7: EMITTER 6, 8: COLLECTOR 1,3,5,7 : ANODE, CATHODE 2, 4, 6, 8 CATHODE, ANODE 9, 11, 13,15: EMITTER. 10, 12, 14, 16 : COLLECTOR Unit in mm 5 T1P620 uso ProsHTmA Weight : 0.268 ae TPAD] anit fst [TOSHIBA ‘Weight : 0.54¢ 11-1004 T1P6204] TOSHIBA, Weight : Lig 11-2043 TOSHIBA TLP620,TLP620-2,TLP620-4 MADE IN JAPAN | MADE IN THAILAND [UL Recognized | B67949 | Bi52849 a [BSI Approved _|7426, 7427 "2 [746, 7427 2 1 ULISTT *2 BS EN60065 : 1994, BS EN60950 : 1992 © Isolation Voltage: 5000Vrms (Min.) © Option (D4) type VDE Approved DIN VDE0884/ 06.92, Certificate No. 68384 Maximum Operating Insulation Voltage : 890VpK Highest Permissible Over Voltage : 8000VPK (Note) When a VDE0884 approved type is needed, please designate the “Option (D4)”. © Creepage Distance: 6.4mm (I Clearance : 6.4mm (Min, Insulation Thickness: 0.4mm (Min. MAXIMUM RATINGS (Ta = 25°C) RATING CHARACTERISTIC SYMBOL TuP620 TLP620-2 UNIT TLP620-4 [Forward Current TF (RMS) 60 50 mA [Forward Current Derating | alp/*C | —0a(Ta=39°) | —O5(Ta=250) | mA7"C G [Pulse Forward Current Trp 1100s pulse, 100pps) A 5 [Power Dissipation (I Cireul) | Pp 100) 70 mW [Power Dissipation Derating | Pp =10 =07 nwo [Junction Temperature Ty 135; °C |Collector-Emitter Voltage VoEO 55 Vv [Emitter-Collector Voltage Veco 7 v 8 [Cotes Current Tc 30 ak Collector Power Dissipation 2 Ma cireuity Po 150 100 mW B |Collector Power Dissi 5 F IDerating (1 Circuit) (Ta =25°0) | 4PC/°C 715 710 mw /°C [Junction Temperature Ty 125 °C [Storage Temperature Range Tstg —55~125, °C Operating Temperature Range Tope —55~100 °C [Lead Soldering Temperature Tsold 260 (10s) °C ‘Total Package Power Dissipation Pr 250 150 mW Total Package Power Dissipation 7 Derating fa=25°C, 1 Cireuty | 4P0Y°C 238 a8 |wse ‘Isolation Voltage BY 5000(AC, 1 min., RH= 60%) Vins TOSHIBA RECOMMENDED OPERATING CONDITIONS TLP620,TLP620-2,TLP620-4 CHARACTERISTIC SYMBOL | MIN. | TYP. | MAX. | UNIT’ Supply Voltage veo | — B24] Vv Forward Current Trams) | — | 16] 20] mA Collector Current IC = i] 10] mA Operating Temperature To | -25| — | 85] °C INDIVIDUAL ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN, | TYP. |MAX./ UNIT 7 [Forward Voltage VE To [iis] a3] Vv & [Forward Current Tp = [25 | 20 [pA [Capacitance Cr = [60 | — | oF [Collector-Emitter s|_—l—lv 2 [Breakdown Voltage (BR) CEO) 5 |Emitter-Collector 7 Vv 5 [Breakdown Voltage (BR) ECO| 7-|- z Vv =| 10 | 100 [na fg Collector Dark Current | Toxo WV Ta=aee = zp 50} ak [Capacitance (Collector =o fe Io Braittery Cor |Vor=0, f=1MHz — | 10] — | 9 COUPLED ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN, | TYP. |MAX./ UNIT 5 Tp=2omA, VoR=5V 30 | — | 600 Current Transfer Ratio Ielte | PGp ote ® Ip=timA, Vop=04V = | «} = Saturated OTR Top isat)| teak op tet — [= [0a Collector-Emitter Saturation Voltage VCE (sat) — | 02|— |v Rank GB = [= 04 Off-State Collector Current_| Ic (om = T[_10 | pA CTR Symmetry Te (ratio) oss | 1] 3] — TOSHIBA TLP620,TLP620-2,TLP620-4 ISOLATION CHARACTERISTICS (Ta=25°C) CHARACTERISTIC —_| SYMBOL ‘TEST CONDITION min. | Typ, |Max. |UNIT Capacitance Input to Output, os — |_| = [PF Tsolation Resistance Rg xao| io — | 5000 | — | = | Isolation Voltage BVg AC, 1 second, in oil — [10000 —_| Vrms DC, 1 minute, in oil = [10000 — [Vac SWITCHING CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC —_| SYMBOL TEST CONDITION man, | Typ. [Max. | UNIT Rise Time a = z= Fall Time = 3p — Turn-on Time ton, = 3; — |“ Turn-off Time toff = 3, — ‘Turn-on Time ton orn mg) = 2, — Storage Time ts y, Tet tem =| 5] — | ps Turn-off Time ‘ORF a = [25 [= Fig.1 Switching Time Test Circuit Ip Veo Ip RL ts Veo Vcr Vee | ov ton, tOFF TOSHIBA TLP620,TLP620-2,TLP620-4 FORWARD CURRENT KS) 0h) 2 % i : i ‘on ‘ALOWABLE PULSE FORWARD CURRENT ‘TLP620 Ip - Ta AMBIRNT TEMPERATURE. Ta (0) ‘TLP620 ay a {a AMBIRNT TEMPERATURE Ta (0) "TLP 520 10 Po - Ta a lp - De 700 20 PULSE WIDTHS 100 tenase 3 DUTY CYCLE RATIO. DR. ALLOWABLE FORWARD CURRENT KS) 0h) DISSIPATION PG) tn) ALLOWABLE COLLECTOR POWER ‘on -ALOWABLE PULSE FORWARD CURRENT ‘TLP620-2 TLP6O-4 Ip - Ta a AMBIRNT TEMPERATURE Ta (0) TLP 920-2 TLPOO-4 PC ~ Ta 03 ae a0 10020 AMBIRNT TEMPERATURE. Ta CC) TLPA20-2 TLP620-4 pp ~ DR PULSE WIDTHS 100 tena a > ws a ws oT ae DUTY CYCLE RATIO. Dg TOSHIBA TLP620,TLP620-2,TLP620-4 lp - ve Avp/ATa ~ Ip 2 ge i 8 = Be 5 BS g ae z Pe tas 0a FORWARD VOLTAGE. Vp () \ pp - VeP 3 ee frcae winmiciom 3 & | mequency soos 2, . Ta=25°C » 8 a a" 3 Ee E a soa 8 1 z 3 oa 0842s 02a a PULSE FORWARD VOLTAGE. Vep_ AMBIENT TEMPERATURE. Ta) a Ic - VcE Ic - Vor 3 masse 3 2 « 8 5 0m, i 2 0m; bon 5 g s g B, Zane i g ptm 8 i d Ti 020d as as COLLECTOREMITTER VOLTAGE Vee (V) COLLECTOREMITTER VOLTAGE Yor ©) TOSHIBA TLP620,TLP620-2,TLP620-4 ve - ir Io - vr 1 8 g 4 é zg 7 2 5 os z 3 os 5 -2 2 * 2 8 0.065 oa FORWARD VOLTAGE Vp? oa oa as ie aaa FORWARD VOLIAGE Vp.) Ig - ir 1 neae 0} Vop=5v ao] -"=* vermoav 2 Toh — te z 2 5 aver Q 2 4 é g 2, 5 os B 3 od ge wfomnen eal 5 nese og z é — vee=5v 4 ons = vep=oav rr tae FORWARD CURRENT Ip (aA) FORWARD CURRENT Ip (A) TOSHIBA TLP620,TLP620-2,TLP620-4 Ic - Ta VCE (sat) - Ta 5 ry | Eo rosin i 3 eH 8 ao Ss i 5 E> ons] E , 2 oo 3 : sl ‘oe ta AMDIRNT TRNPERATURE Ta CO) al a a ) ‘AMBIRNT TEMPERATURE Ta (0) Ton ta ty TEST CONDITION i, ~ swirentNa Time Yoo eS sr XS E & i 7 a CTO LOAD RESISTANCE Ry, 0) TOSHIBA TLP620,TLP620-2,TLP620-4 RESTRICTIONS ON PRODUCT USE @ TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified ‘operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices," or “TOSHIBA Semiconductor Reliability Handbook" etc. oo707e8c @ The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc... Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. @ Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic, Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. © The products described in this document are subject to the foreign exchange and foreign trade laws. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. SOT OUT

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