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Rech ee er) ee LS —_
D882 TRANSISTOR(NPN)
Power dissipation
TO-126 Pow: 1.25W (Tamb=25)
Collector current
‘EMITTER
low: 3A
[Link] Géilector-base voltage
[Link] Veeneno; 40 V
‘Operating and storage junction temperature range
[Link]: “85°C to + 150°C
ELECTRICAL CHARACTERISTICS
(Tamb=25C unless otherwise specified)
Parameter ‘Symbol, Test conditions
a imiachiee Ea M
Collector cut-off current s — Ves= 40 V, le=0. 1 BA
Coliector-omitter saturation voltage Voesst c= 2A, l= O.2A os v
Rank | R ° Y GR
Range 60-120, 100-200 160-320 200-400, Typical Characteristics
‘TOTAL POWER DISSIPATION ve,
AMBIENT TEMPERATURE
DERATING CURVES FOR ALL TYPES.
x
= Wore t T) Tt
1 ‘LAluminurn heat sink z I { !
$1 oF 10 mm thhocss Bx '
2 Sheba, j
a St
a me 3 8
a i ' |
&, Bao) |
Po i 29
a i
° bo 30 150,
Te-Case Tampertire—“e
coutecton cunnent ve
SAFE OPERATING AREAS SStLEETOR FORMAT TER vouTAGE
_ ssa a OLA
t faogmBRONe Ne f
rae % Bs
34 “Cig $2. 3
8 zn ea
> 3
EJ 2 3
i i
g aca Be
Son ¢: :
Soha 8 5 F
& [ease s sl 2
2G ast conte
005) foery wih increase of ~ ign} mA]
col ee Sa on
eee oh
Vee Coleco oEniterVlape-V VeeCoteto to Eniter Witage-Y
INPUT AND OUTPUT CAPACITANCE
oar
‘g, IE=0(Cop)
B30 I¢=0(Ca)
Bro
52
25a
= 810)
Be 4
bee
a ee
Vog—Collector to Base Voltage-V
Vee—Emitter to Base Volta ge-V
D882
BASE AND COLLECTOR SATURATION
> VOLTAGE ve COLLECTOR CURRENT
1
1e=10.
Puls Tost
gf
of
|
05
03
oo — ote aT ass 10
oros 1s
le ~Collector Current =A
GAIN BANOWIOTH PRODUCT vs
COLLECTOR CURRENT.
2
Voe=50V
Forced ee
rt feat sin
3
g
1
oor
f7-Gain Bandwidth Product MHz
O03 OT os
le~Collector Current -A