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CH 3

Ce chapitre traite des principes fondamentaux de l'analyse et de la conception des amplificateurs à transistors micro-ondes, en mettant l'accent sur la stabilité et le gain de puissance. Il présente des procédures de conception systématiques basées sur les paramètres S des transistors et les exigences de performance, ainsi que des considérations sur les réseaux de polarisation. Les équations de gain de puissance et les considérations de stabilité sont également abordées, soulignant l'importance d'éviter les oscillations dans les amplificateurs.

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3 vues41 pages

CH 3

Ce chapitre traite des principes fondamentaux de l'analyse et de la conception des amplificateurs à transistors micro-ondes, en mettant l'accent sur la stabilité et le gain de puissance. Il présente des procédures de conception systématiques basées sur les paramètres S des transistors et les exigences de performance, ainsi que des considérations sur les réseaux de polarisation. Les équations de gain de puissance et les considérations de stabilité sont également abordées, soulignant l'importance d'éviter les oscillations dans les amplificateurs.

Transféré par

kshen2004
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3 MICROWAVE TRANSISTOR AMPLIFIER DESIGN 3.1 INTRODUCTION This chapter develops some basic principles used in the analysis and design of microwave transistor amplifiers. Based on the $ parameters of the transistor and certain performance requirements,a systematic procedure is developed for the design of a microwave transistor amplifier. ‘The most important design considerations in a microwave transistor am- plifier are stability, power gain, bandwidth, noise, and de requirements, This chapter deals mainly with the problems of stability and power gain in narrow- band amplifiers. VSWR considerations are also discussed. Low-noise ampli- fiers, broadband amplifiers, and power amplifiers are discussed in Chapter 4 ‘A design usually starts with a set of specifications and the selection of the proper transistor. Then a systematic mathematical solution, aided by graphical methods, is developed to determine the transistor loading (ic. the source and load reflection coefficients) for a particular stability and gain criteria. An un- conditionally stable transistor will not oscillate with any passive termination. On the other hand, a design using a potentially unstable transistor requires some analysis and careful considerations so that the passive terminations pro- duce a stable amplifier. Design procedures for both unilateral and bilateral transistors, based om stability and gain requirements, are described. Both passive and active de bias networks for BJTs and GaAs FETs are analyzed. It is important to select the correct de operating point and the proper de network topology in order to ob- tain the desired ac performance. a2 sec.32 Power Gain Equations 213 3.2 POWER GAIN EQUATIONS Several power gain equations appear in the literature and are used in the design of microwave amplifiers. Figure 3.2.1 illustrates a microwave amplifier signal flow graph and the different powers used in gain equations. The trans- ducer power gain Gr, the power gain G, (also called the operating power gain), and the available power gain Gy are defined as follows: P,_ _ power delivered to the load Pays power available from the source Gr Pr, _ power delivered to the load Pix power input to the network and ayn _ power available from the network Pays” power available from the souree Gs ‘The expressions for Gr, Gp and Ga were already derived in (2.6.14), (2.6.15), (2.6.18), and (2.6.22)—namely, 1- InP 1- InP 1 2 Gr are! Sa! sae 21) 22) (3.23) 3.24) Pam Flr tur igure 32.1 Different power definitions. 2 Microwave Transistor Amplifier Design Chap. 3 oat (25) Tour = Sa + SSuts. 626 Gris function of [,,I':,and the S parameters of the transistor (i.e.,Gr = f(T, PALS), Gp = [Ci{S) sand Ga = FCS), Ta terms ofthe amplifier shown in Fig.322, the input matching network transforms the generator impedance Z; (usually 50 Q) to the impedance Z,,or inother words tothe source reflection coefficient I, The output matching net- ‘work transforms the impedance Zo (usually 50 Q) to the load impedance Zz. or to the load reflection coefficient ',. Observe that we use the nomenclature Z, ‘and I, for the source impedance and source reflection coefficient at the input port ofthe transistor, and Zy and [forthe load impedance and load reflee- tion coefficient at the output port ofthe transistor ‘The values of F,I'y, and the S parameters of the transistor determine the gain ofthe amplifier according to (32.1) through (32.4. ‘The passive matching networks produce values of I and [such that In) < tand tz Lnother words the resistive par associated with Z,and Z. is postive. However, rom (52.5) and (3.2.6) its possible tht for certain val tues of the $ parameters (where (fy -<1 and |P1| <1) that [Prs|> 1 and/or [Four > When in| 1 or Tout > 1, the input or output ports of the tran- Sistor present a negative resistance and osilations can occur. Obviously this is {situation that we must avoid in amplifier desig. Example 32.1 (a) The input and output matching networks in Fig 32.2 are designed to produce T, = 05[120° and F, = 0.4[90°. Determine Gr, Ga, and Gy ifthe $ parameters of the twansistor are Zour Z am amon Ji & 7 ‘network network 8 richer rt Pete Tour Fe Figure 322A microwave ampliir diagram. Sec.3.2 Power Gain Equations 215 \ Si. = 0.6|=160° | Sua = 0045|16° | Sq = 25)30° Sy = 05{=90" (b) Calculate Pays, Pix, Pans ini = n-o and Pein Fg, 322 i B= 10[0", Z: = 50 ©, and (©) Calculate (VSWR) and (VSWR), Solution. (a) From (3.25) and (3.2.6) we obtain = ccelt6g" + 2045|16°C2.5|30°)04]00° Tw = O6f=160" + SOSSUC ESL OAT 9g) 6560 T= os[asortapary ~ 9°71: and = 05|=90° + 245625 120 Tour = 05|=a0° + S[120° Lona Lae + poleteoasTizay ” OAL Then, from (32.1),(32.3),and (32.4) i readily follows that ee ed [T= va27|—166.6°05[OF °°” = O5[-o9 aapponp = 23 (0975 B) —_ as _1= 04" ~ are Tr 05-904 paoyF ~ 1351 (er 11.31 4B) and 1-5) 1 eros 2" ap T= Oo =toor (0505 OY Tomy Since the values of Gp = Pu/Pyx and Gr = Pi/Pays differ by 1.56 4B (i, 11.31 55 (or984B) 4B 9758 = 1568) it follows a8 it follows hat the input powers ss than the power availble from the sour. Tn fat rel 2716) and (2729) namely ns POwstvaable Pix = Paws, 27 and . 6, 6M, 628 ‘het fom (2.7.17) the source mismatch factoris (p= AOS) 08277 oy [03 [120°(0.627|= 164.6" 3 (or —1564B) Observe how Gr y 43-13. 3) re how Gr and Gy are related by (328). That i now, Gr and (8.28). That is, 943 = 13.51(0.6983) or icrowave Transistor Amplifier Design Chap. 3 26 Mi ‘PulPavsare fairly close (i.c..98 4B and 9.75. Also,since Ga * Pan/Pavs and Gr Se ans cea AaB, respectively), the power delivered to the load is lose to the the network. In fact, P= PavwMe 29) and Gr= Gale 2:10) where from (2.725) the load mismatch factor is _ t= sy] = 04709) Me = 7 aT 704 (09874. (or ~0055 4B) Observe how Gr and Ga are related by (32.10). That is 943 = 955(0-9874) oF 9.75 GB = 93.48 ~ 0055 0B fb) The power available from the source i A RezI ” HSH Pros “Then, using (3.2.7) the input power is Faye = Pavs My ~ 0:25(0:6983) = 01745 W e calculated using the definition of Gr. “The power delivered to the load can be calculated using the defini ‘Thats, 58 W P, = GrPays = 943(025) It can also be calculated using the definition of Gy That is, P= GpPyy = 1351(0.1745) = 2.358 W 3.2.9). That is, “The power available from the network can be calculated using - 4 BB oe 20w Paws ~ 9,” 0984 It can also be calculated using the definition of Ga That is, G Pays = 955(0.25! Pr {) Since the mismatch factor M, has been calculated in part (8), (2.81) and (282) to calculate (VSWR) That i, Le fn) 1+ vie (SWR)e = T= fF Similarly, using (2.8.4) and (2.8.5) we obtain Lind (SWRI Sec.33 Stability Considerations 27 3.3 STABILITY CONSIDERATIONS ‘The stability of an amplifier, or its resistance to oscillate, isa very important considération in a design and can be determined from the S parameters, the matching networks, and the terminations. In a two:port network, oscillations are possible when either the input or output port presents a negative resistance. ‘This occurs when [T1w > 1 or [Toul > 1, which for a unilateral device occurs when [Sn] > L or |S] > 1. For example, a unilateral transistor is a transistor where Si2 = 0 (or its effect so small that it can be set equal to zero). If Sis = 0, it follows from (3.2.5) and (3.2.6) that [Pin] = |Su| and our = |Ss2. Hence, if 1 the transistor presents a negative resistance atthe input, and if Sz > 1 the transistor presents a negative resistance at the output. The two-port network shown in Fig. 3.3.1 is said to unconditionally stable at a given frequency ifthe real parts of Ziw and Zourare greater than zero for all passive load and source impedances. If the two-port is not unconditionally stable, it is potentially unstable. That is, some passive load and source termina tions can produce input and output impedances having a negative real part. In terms of reflection coefficients, the conditions for unconditional sta- bility at a given frequency are nhst @a) Irl 1 and|4) <1, it follows from (33.19) and (3.3.20) that the transistor is unconditionally stable at 2GH2, ‘AU/= 4 GH, we find that K = 1.535 and A = 0.226|121° Therefore since K> 1 tnd [Al < 1, the transistor is unconditionally stable at 4 GHz. The stability circles are plotted in Fig. 33.6 at f= 300 MFIz and, 0358 1GHe, Manufacturers do not fabricate transistors with K > 1 and || > 1. How ever, the addition of certain feedback networks or certain terminations to a transistor can create a potentially unstable two-port network with K> 1 and |4|> 1. For example, a two-port network whose $ parameters are Six = 0.75 0°, Sa = 690°, Sir = 0,5|60°, and Sy =03[70° has K = 1.344 and 2.156. This two-port network has K> 1; however, itis potentially un- stable because |4| > 1. Infact, the input and output stability circles from (3.3.7) to (3.3.10), are located at C, = 0.1[107.4°, r= 0.44, Cy = 0.26|—36.3°, and ‘1 = 0.41, which can be drawn inside the Smith chart to show the unstable re- gions, The evaluation of Bin (3.321) gives By = —3.34, Hence, when /4] > Lit follows that By <0. This shows that when the condition (3.3.20) for stability is ‘ot satisfied, neither isthe condition (3.3.21), A two-port network is said to be unilateral when Siz = [Link] a unilateral {wo-port network, Fix = Su and Four = Sia, Hence, we have unconditional sta bility if |S] <1 and [Spl <1 for all Passive source and load terminations. In fact, from (33.16) and (33.17), with S12 = Owe have K = and A= Sin, and itfollows from (3.3.19) that 1 [SuP = |[Snl? + [SuSul?>0 (1 ~ |SuP)G - |SaP)>0 228 Microwave Transistor Amplifir Design Chap. 3 @ Figure 33.6_ (a) Input stability circles for Example 33.1; (b) output stability cites “The preceding inequality requires that |S, <1 and [S| <1 for unconditional stability of unilateral two-port Itis interesting to see what happens to the stability circles in the limit as S129 [Link] reader is referred to Problem 3.10 for this analysis. in the potentially unstable situation illustrated in Figs. 33.3 and 3.3.4,the real part of the input and output impedances can be negative for some source land load reflection coefficients In tis case, selecting and I. in the stable region produces a stable operation, Even when the selection of T and P produces [Pi > 1 or [Pour| > 1the circuit ean be made stable ifthe total input and output loop resistance in Fig. 3311s positive. In other words, the circuit is stable if ‘$2.33 Stability Considerations 25 Output stability cele Output staity creto (600 Mi) ro) Figure336 Continued Re(Z, + Zy)>0 and Re (Z, + Zour) >0 ‘A potentially unstable transistor can be made unconditionally stable by either resistively loading the transistor or by adding negative feedback. These techniques are not recommended in narrowband amplifiers because of the resulting degradation in power gain, noise figure, and VSWRs. Narrowband 28 Microwave Transistor Amplifier Design Chap. 3 amplifier design with potentially unstable transistors is best done by the proper selection of F, and [to ensure stability. On the other hand, the techniques are popular in the design of some broadband amplifiers in which the transistor is potentially unstable. “The following example illustrates how resistive loading can stabil tentally unstable transistor. Example 33.2 ‘The S parameters ofa transistor at f= 800 MHz. are Six = 06s[-95° Determine the stability and show how resistive loading can stabilize the transistor. Solution. From (33.16) and (33.17) we find that K = 0.547 and 4 = 0.504 |249.6°, Since K'< 1, the transistor is potentially unstable at f = 800 MHz. “The input and output stability circles are calculated using (3.3.7) to (33.10): cat G, Figure 3.3.7 shows the plot ofthe stability circles, together with the stable region. For the input stability circle the Smith chart in Fig. 33.7 represents the T, plane and for the output stability circle the I plane. It can be scen that a series resistor with the input of approximately 9 & assures stability at the input (sce Fig. 3.3.8). The series Addition of a 9-9 resistor produces an impedance Z, equal to Z; + 9.Q. For any passive termination Z;, the real part of Z, will be greater than 9 @. Therefore its associated re- flection coefficient Iwill always be in the stable region in Fig. 337 ‘Also, a shunt resistor with the input of approximately 0.7/50 = 14 mS (or 71.5 @) produces stability atthe input. Looking at the output stability cirele, it follows that ei- ther a series resistor of approximately 29 @ or a shunt resistor of approximately S00 2 at the output produces stability at the output, The four choices of resistive loading are shown in Fig. 33.9. Usually, stabilizing one port of a transistor results in an uncondi- tionally stable device Ail four choices of resistive loading affect the gain performance of the amplifier. Inaddition, from a practical point of view, resistive loading at the input (as shown in Figs 33.94 and3.3.90) is not used because it produces a significant deterioration in the noise performance of the amplifier (sce Chapter 4) In some potentially unstable designs of broadband amplifiers the shunt resistor Toading at the output, as shown in Fig. 33.94, produces a trade-off between gain and sta- bility that is quite acceptable, esulting in a stable two-port with reasonable gain over 8 wide bandwidth (see Example 4.43). For the stabilized shunt resistor configuration in Fig, 33:9 (ie., with a 500-0 shunt resistor), the resulting S parameters are s0c.33 Stability Considerations a — Hi output staity [oul >1 circle Wow > 4 Bee (0.18(50) = 9 £2 0.5860) = 29 0 ‘igure 33.7 Input and output stability circles. Si = 065-987 os2|si2" oi162° 6 |-36° 28 Microwave Transistor Amplifier Design Chap. 3 T4tt i Figure 338 Series resistive loading of Zo Z=Z+90 thetransisorat the input port. zon 2a a 500.0. @ © © @ ive loading to improve stability Figure 339 Four types of resi and from (3.3.16) and (2.17) K ~ 1.0and 4 = 0.408)25013", which show thatthe sta- biized networkin Fig 3.3.94 is unconditionally stable at f= 800 Mz Negative feedback can be used to stabilize a transistor by neutralizing Sir—that is, by making S12 = 0. However, this is not commonly done. In a broad- band amplifier design using a potentially unstable transistor, a common proce- due is to use resistive loading to stabilize the transistor and negative feedback to provide the proper ac performance—that is, to provide constant gain and low input and output VSWR. 3.4 CONSTANT-GAIN CIRCLES: UNILATERAL CASE ‘A two-port network is unilateral when Sy =0. In a unilateral transistor, Tix = Sin,Povr = Sm and the unilateral transducer power gain from (32.1) and 622), called Gra; is given by i= Ir fis sun, ‘The first term in (3.4.1) depends on the Si: parameter of the transistor and the source reflection coefficient. The second term, Sn}, depends on the tran- sistor scattering parameter Szx;and the third term depends on the Sm parame- {er of the transistor and the load reflection coefficient. We can think of (3.4.1) as being composed of three distinet and independent gain terms. Therefore, we can write (3.4.1) in the form Gr GA) Gru = GGG, 42) S0c.34 Constant-Gain Circles: Unilateral Case 229 where i-In Tsun Ce G44) G45) and the microwave amplifier can be represented by three different gain (or Joss) blocks, as shown in Fig. 3.4.1. The input matching network determines T, and therefore the value of G, according to (3.43); the transistor gain is, value of G_ according to (3.4.4). The terms G, and G: represent the gain or loss produced by the matching or mismatching of the input or output circuits, respectively. The term G, affects the degree of matching or mismatching between [, and Si,.Although the G, block ismade up of passive components, it can either have a gain contribution greater than unity or a loss. The reason we usually refer to G, as a gain block is that there isan intrinsic mismatch loss between Z,, the matching network, and Si (ie.,be- tween T' and 5). Therefore, deercasing the mismatch loss can be thought of as providing a gain. Similarly, the term G affects the output matching and can be thought of as the output gain block. The term G, is related to the device and is equal to[S:. In terms of decibels, we can waite from (3.42) t0 (3.45) Gy,(dB) = G,(dB) + G,(dB) + G,(aB) If we optimize T; and [, to provide maximum gain in G, and Gr, we re- fer o the gain as the maximum unilateral transducer power gain called Grima: For a unilateral unconditional stable transistor (ie, for [Si < 1 and [Sa] <1), the maximum values of G, and Gz are obtained when (see Problem 3.15). t= Sh 2 Inpat Out mating Transistor watching rework atwork 5 & a fy 4% z 1, Si Sat Figure 3441 Unilateral transducer power gain block diagram. 230 ‘Microwave Transistor Amplifier Design Chap. 3 and and (342) ives Gruss = GsmaxGoGr ax 1 — 3.46 ce 2 in Fg 3.42, -Tue appropriate block diagram for (2.4.6) shown in Fe: Pore ee alate case Pe Sian Tout = the mai mum value of Gru, which occurs when I, = Sf, = TiyandT'z = Sh = Tounis qual to the maximum value of Gp and Ga (see (3.2.3) and (3.2-4)). That is Gruimax = Grime = Gate 5 “The unilateral transducer power gain is given by (3.4.1) or (3.4.2),and the imum unilateral transducer power gain, obtained when Ts Sf, and maximum unilateral trat power gi sts Ta Stuis piven by (3.46)-The expressions for G, and Gin (3.4 ae singlar in form and can be written inthe general form i-|nP =o B47 OO TSF Gan where i= s with ii = 11 or {= L with if = 22. The design for a specific gain is based on (3.4.7). “two cases must be considered in the analysis of (3.4.7): the uncondition- ally table ease, where (S] < 1,and the potentially unstable ese, where Sl > 1. [| ee ; 6® Come |] | hor zn 1 80 Se | resi T= Sie in block diagram, ‘igure 342 Maximum unilateral transducer power 0.34 Constant Gain Ctl: Uniateral Case m Unconditionally Stable Case, [Si] <1 “The maximum value of (3.4.7) is obtained when Fj = Sj,andit piven by 1 G awe = TIF ‘The terminations that produce Gima are called the optimum terminations. From (3.4.7), Gi has a minimum value of zero when [T= 1. Other values of F, produce values of G, between zero and Giaux- That is, 0=G,= Gyn “The values of [that produce aconstant gain Gwill be shown to lie in acir- cle in the Smith chart. These circles are called constant Gicircles(i.,fori = sthe circles are constant G, circles and for i = L the circles are constant Gy, circles). Define the normalized gain factor as 3.48) 51 - |S.) pth -|sF) G49) such that Osgs1 In Appendix D it is shown that the values of T; that produce a constant value of gin (3.4.9) lie in a circle whose equation is In,- | (34.10) where the center ofthe cree i given by eS; 4, = |[Link] = a) cae and the radius is - a —|s,P) . al = 8) Each constant value of g generates a new constant G; circle, Equations (34.11) tnd (4.12) can be used to generate the constant G; cles and the constant circles. Figure 3.43 illustrates a constant G circle. The distance from the origin to the center of a constant G; circle is given by |C, in (3.4.11), and the angle of inclination, ais equal to the phase of Cy, (which is the phase of 57) It is observed that when g = 1 (ie, when G,= Gin), (3.4.12) gives, 15, = 0 and (3.4.11) gives C,, = 5%. Therefore, the constant G circle for maxi- ‘mum gain is represented by a point, located at Sy In conclusion, the procedure for drawing the constant G; circles in the Z ‘Smith chart is as follows: 22 Microwave Transistor Amplifier Design Chap. 3 sec. 34 Constant-Gain clas: Unilateral Case 23 Figure 343 A constant G circle in the Sith chart 1. Locate S¢ and draw a line from the origin to $}-At 5}, the gain is Gums and is given by 3.48). 2. Determine the values of Gi, where 0 + G; < Gimfor which the constant G, circles are to be drawn, and calculate the corresponding values of = GIGinas 3, From (3.4.11), determine the values of Cy, for each g 4, From (3.4.12), determine the values of rs, for exch 5. ‘The 0- ASH Inwhat follows, we willshow that for an unconditionally stable two-portnetwork, the solutions with a minus sign in (3.6.5) and (3.66) are the useful ones [32,33] 1f|B\/2C\| > 1 and B, > 0in (365), the solution withthe minus sign pro- duces |i] <1 and the solution with the plus sign produces [Pu > 1. If (By2Ci| > I with B; <0 in (3.65), the solution with the plus sign produces Iri|< 1 and the solution with the minus sign produces [Py] > 1. Similar con- siderations apply to (3.6.6). The proofs for the previous statements are given in Appendix E, Section E.1. Since itean be shown that|B/2C? > 1(/= 1or2)issimilarto K? > 1,itfol- lows that the condition|B/2C| > Lis similar to K| > 1 (see Appendix E, Section 2). Thereforeif|K| > 1 with X positive, one solution of (3.6.5) and (3.6.6) has a magnitude less than 1, and the other solution has a magnitude greater than [Link] fact,for K > Land B, > 0,the solutions with the minussign have magnitudes less than 1. The analysis for |K] > 1 with K negative is eft as an exercise (see Problem 3.20);i follows that for K < ~1 a simultaneous conjugate match does not exis. ‘Associated with Tvs and Fz, are a source and a load impedance. The real parts of these impedances are positive if 4] < 1 and | yc| < 1. From the pre- vious considerations, we conclude that in terms of K, the condition that a two- port network can be simultaneously matched with [Pie] <1 and [Pu <1 is K>1 ‘The condition K > 1 is only a necessary condition for unconditional sta- bility. Therefore, a simultaneous conjugate match having unconditional sta- bility is possible if K > 1 and |d) <1. Since |4| <1 implies that B, > 0 and Bz > 0,the minus signs must be used in (3.6.5) and (3.6.6) when calculating the simultaneous conjugate match for an unconditionally stable two-port network. In what follows,any reference toa simultaneous conjugate match assumes that the two-port network isunconditionally stable.1n.a potentially unstable sit- uation, the design procedure is best done in terms of G, or Ga (see Section 3.7) ‘The maximum transducer power gain, under simultancous conjugate match conditions, is obtained from (3.2.1) with [5 =Tjy= Pus and Ty = Tur = Pc. Thus, we obtain 369) Substituting (3.6.5) and (3.6.6) into (3.6.9), it can be shown (see Appendix F) that Grmax can be expressed in the form Gran 6.10) 2a Microwave Transistor Amplifier Design Chap. 3 Since under simultaneous conjugate match conditions Gr = Gy = Ga, it fol- ows that Gris = Gpmx = Game ‘The maximum stable gain is defined as the value of Grow when namely, Gwse 6.11) Fora potentially unstable transistor, Guso is figure of merit. Figure 3.62 illus- trates a typical way in which Grnax = Gpmox = Gamo and Guso are given by a manufacturer. At the frequencies where the transistor is unconditionally stable, Gann is calculated and plotted in Fig. 3622. In Fig. 362, Gana is denoted by MAG (maximum available gain).At the frequencies where the transistor is po~ tentially unstable, Gyso is plotted in Fig, 3.62, From Fig.3.62 itis seen that the transistor is potentially unstable below 1.5 GHzsince MSG (i., Guso) is given; tnd above 2 GHz the transistor is unconditionally stable since Gia is given. 'A simultaneous conjugate match does not exist for K < 1. However, in a potentially unstable two-port network with K > 1 but || > 1 (which is similar to Bi <0 and By <0), solutions to (3.6.5) and (3.6.6) using the plus sign pro- luce ry) © Land [Fu] < [Link] a case (ie.,for K > 1 and (| > 1), the val tues of Pry, and Tz given by (3.6.5) and (3.6.6) using the plus sign result in minimum value of Gz,and the input and output VSWR are unity. Substituting these values of ['y, and Fy: into (3.6.9), the minimum value of Gris given by Crna = Sah a + VE Isl Recall that in a potentially unstable situation the maximum value of Gr approaches infinity as [, and T', approach the unstable region. Therefore, the ‘expression (3.6.12) gives the minimum value that Grcan have when K > 1 and 1) (3.6.12) 30) 25] MAG, MSG, Sere (48) Figure 262 Typical MAG (ie, Gamu) MSG (ie, Gusc), and (Sef versus fe- {quency at Ver = 18 and fe = 30mA fot the HXTR-S103, (From HP Microwave land RF Designers Catalog 1990-1991; Courtesy of Hewlet Packard) $0.26 Simitaneous Conjugate Match: ilsterl Case 20 |4]> [Link],since the input and output ports are conjugate matched, it follows that (VSWR)a = (VSWR)ow = 1. me . Example 36.1 Design amicrowave amplifier using a GaAs FET to operate f = 6GHz with maxi- mum transducer power gain. The transistor § parameters at the linear bias point, Vos = 4V and Ios = OSIoss, are Sq = 06411713" Sq = 0057|163° Sy, = 2.058)28:5° =osn|-957" Selon, Hom (3316) an (17), we obi K'= L508 and 4 = 03014 109. Bi Since K> land La) < 1, the GaAs FET is unconditionally stable. - 1085, and from (3.5.2), a Gre aes ‘The preceding inequity shows hat Sn cannot be nested 1 reflection coefficients for a simultancous conjugate match are calcul from (3.65) and (3.6.6) (using the minus sign) as follows: By = 0.9928 B, = 08255 , = 04786|-1773" c= 02911039" Py, = 0762 [177° 08948 < and Tyg, = 0.718)103.9" ‘The maximum transducer power gain, ftom (36.10), is 2.058 Gra (1.504 ~ VSO 374 of 113848 0st ‘The design of the matching network . ing networks using mcrostip ines is astated in Fig. 363, where the amitancesasoated wih Fy andy ate _ 22-2 Yy, = PBS ~ (144 24.6) x 10S ang oats — j1.19 Yue = = 238) x 107) 7 a (828 ~ j238) x 1077S us Microwave Transistor Amplifier Design Chap. ‘$00.3.6 Simultaneous Conjugate Match: Bilateral Case 245 Lenath of open reuited stub Length of open ‘circuited stub = ot, \ AZ we Lena ot 5 y ti | 0.0615; Tength of series microstrip line 0.1691 Figure 463 (a) Design of the input matching network; (b) design of the output © ‘matching network igure 363 Continued “The input matching network can be designed with an open shunt stub of length 0.1854 andaseries transmission fine ofength 0.06151. The output matching network isdesigned ‘with an open shunt stub of length 0.1762 and a series transmission line of length 0.169 ‘The ac amplifier schematic is shown in Fig. 364. Using Duroid® (c, = 2.23, +h = 0.7874 mam) for the board material, we find that W = 2.41 mm for a characteristic elec impedance of 50 2, ¢4 = 1.91, and A = 0.7236), where dy = Sem at f = 6 GHz, The mi- crostrip lengths at f= 6 GHz are 0.41854 = 6.70 mm 0.06154 = 2.23 mm 0.1762 = 637 mm 246 Microwave Transistor Amplifier Design chop. 0.1694 son (00854 + 0.176, son aC ores igure 3464 The ac schematic ofa GaAs FET microwave amplifier. All microstrip lines have a characteristic impedance of 50. The design for Ginx with Ty, and Ty, at 6 GHz assures thatthe input and out. put VSWR are 1 This example is revisited in Chapter 4 (Section 4.3), where noise considerations are included. Finally, we should point out that the stability must be checked at all fre- (quencies, so that the reflection coefficients Px and Px provide stable operation, We have seen that for an unconditional stable device, the terminations Ty, and Tus, given by (3.6) and (3.6.6), will produce a simultaneous conju gate match which results in the maximum value of the transducer power gain, If the design calls for a transducer power gain different from the maximum, a constant-gain circle procedure based on (3.2.1) or (3.2.2) can be attempted. As ‘we will see, such a procedure is not practical ‘A constant-gain circle procedure based on (3.2.1) could be attempted as follows. Write (3.2.1) in the form Gp=G1G,6, (36.43) where G68) and (36.48) ‘Then the design procedure is as follows: 1, From (3.6.15), the constant Gr circles can be drawn using (3.4.9) to (3.4.12), Select the desired F for a given Gi, gain. Observe that T; = Sf produces [Link] but not Grimes Sec.37 Operating and Available Power-Gain Circles 27 2, Caleulate Tiy from (3:25), Observe that Fix depends on I; therefore, G} depends on Gz. 3. From (3.6.14), the constant Gi circles can be drawn using (3.49) to 3.4.12) (observing that Tw replaces Si). T= Ty produces Gina, and constant G; circles can be drawn for G; < Gnas, Select the desired F; for a given Gi gain, Of course, the values of G; might not be satisfactory for the desired Gr. This will require the selection of another P and the pro- cedure repeated, 4, Design the matching networks, ‘The procedure just outlined is not recommended for a practical design since I'v is a function Ty, making G; function dependent of the Gr function. Furthermore, the centers ofthe gain circles at, = Si andT’, = Py do not give Gas In fact, the graphical approach becomes tedious because of the iterative process required for obtaining the desired gain. As shown in the next section, the design of a microwave transistor ampli- fied in the unconditional stable bilateral case, for a gain different from Grin, can be done using the operating power gain equation (the available power gain ‘equation can also be used), When the transistor is unconditionally stable, a si- multaneous conjugate match can be found, and the design procedure is based 09 Grau oF (as shown in the next section) on the operating power gain in fact, when designing for Grin, Which is equal 10 Gymnas and tO Gnu all design pro- cedures result in T= Pysand P= Pup 3.7 OPERATING AND AVAILABLE POWER-GAIN CIRCLES Operating Power-Gain Circles ‘When S12 cannot be neglected, a design procedure based on the operat- ing power gain G; is commonly used. The operating power gain is independent of the source impedance; therefore, an operating power-gain circle procedure for both unconditionally stable and potentially unstable transistors is simple {and recommended for practical designs. Again we must consider two cases, the unconditionally stable case and the Potentially unstable case Unconditionally stable bilateral case. To develop a design proce- ure with Gp, we write (3.2.3) in the form 74) 28 Microwave Transistor Amplifier Design Chap. 3. and 2 — ASK (73) Here Gp and gp are functions ofthe device S parameters and T'. In Appendix G the values of Pin (3.72) that produce a constant val of gp are shown tole on a circle, known as an operating power-gain circle. equation for an operating power-gain circle in the I plane, with gy as a rameter, is (r.- Gl where the center of the circle C, is located at — 24 @74 T+ gp(1S2l* — 147) and the radius of the circle is given by (= [Link], + 1SaS le) ou: T+ 5,(IS2P = 141 Equation (3.7.4) shows that the distance from the origin to the center of, power-pain circle is simply (|, and the angle of inclination of the circle is C2. ‘The maximum operating power gain occurs at the value of T, whe “Therefore, from (3.7.5) we can write Fem S28 2K|Si2S218pinax + 1 = 0 G2. where gama is the maximum value of gp. The solution to (3.7.6) for uncondi tional stability is As expected, (3.7.8) is identical (o Grass in (3.6.10). “The value of [that produces Gris follows by substituting gp ~ Snax 3.74). This value of F, = Cymax must be equal to Px. That is, from (3.74) ‘s0c.3.7 Operating and Available Power-Gain Circles 249 Boneh + Spmaxl[Szl? — 142) Substituting (3.7.7) into (3.79) and performing some manipulations, it follows that (3.7.9) is identical to (3.6.6) using the minus sign in (3.6.6) This de- tivation is presented in Appendix H. ‘The lowest value of gps zero, which corresponds to Gp = 0. From (3.7.1), Gp = O occurs when |F:| = 1. In other words, the operating power gain is zero srhen all the output powers reflected from the load (ie. when = 1) Fora given G,, [is selected from the constant operating power-gain cr. cles, Gpaun results when Ty, is selected at the distance where gnu = Grou! [su[. The maximum output power results when a conjugate match is selected athe input (ie.,P = Fy). Italso follows that when T; = Px, the input power is equal to the maximum available input power. Therefore, under these cir- camstances the maximum transducer power gain (Girga) and the operating power gain are equal, and the values of F; and I that result in Gpmue are iden tical to Fy, and Fv. respectively. The procedure for drawing a constant operating power-gain circle in the Z Smith chartisas follows: 79) 1. Fora given Gp, the center and radius of the constant operating power: gain circle are given by (3.7.4) and (3.7.5). 2. Select the desired Ty. 3. For the given ['., maximum output power is obtained with a conjugate match atthe input—namely, with I, = Ty, where T's is given by (325). This value of F; produces the transducer power gain Gr = Gp Example 374 Design the amplifier in Example 36. to have an operating power gain of 9 dB. instead of Grmar = Gyn = 11.3848, Solution. Since or 6.2748 then 794 4235 From the results in Example 36.1, K = 1.50, |4) = 0.304, and C; = 0.3911 |—103.9% Therefore, the radius and center of the 9-AB operating power-gain circle, from (373) and (3.7.4), are r= 0431 and C, = 0,508[103.9 secy, 1O® #t*phical construction is shown in Fig. 3.7.20. The 9-dB operating power-gain title shows al Joads that produce G, = 9 dB, The load reflection coctficient can be Selected at point namely. 1 = 0.36[4.% Then the required for maxi out >ut power is 1.875 62917551" chap. 3 Microwave Transistor Amplifier Design ® Figure A741 (a) Operating powersain citcle for Gp =9 4B and location of Grae = 1128 4B; (b) the Block diagram of the amplifier Since T, = Pit follows that Gr= Gp © 9 dB. The block diagram of the amplifier is “ron peinput VSWR is since, = Pj The ouput VSWRiscaleusted using 2.8.4 and (28.6). From (32.6) the output reflection coefficient is Four = 0.67|102.66°. Us ing 2.8.6), we obtain ial = ‘$00.37 Operating and Available Power-Gain Circles 21 (VSWA)n= 1 r ma Input Output matching matching 50.0 + network hetwork 6 ‘| - 629 |175.51° wns: © Figure 37.1 Continued ‘Therefore, the output VSWR is ‘The location of Gyan Spm = and the value of F, tha produces Gnas ce Tye = Comme = ——Seem__ = o.r18|103.9° 1+ BprallSu? — 14?) This value is identical to the value Fw. found in Example 3.6.1. The associated I for ‘maximum output power, which i Tis obtained from [ss + we] = 0702173 ‘ASexpected, this value is identical to the value of Pu, in Example 361 r, The previous example illustrates that for @ given I on a constant Gp Circle, there is an associated I’, = yy that gives (VSWR) = 1. Then for ‘hs there is a Pour. The mismatch at the output between Ty and Tour determines (VSWR) according to (2.84). We can try other values of Tr ‘on the constant Gp circle and calculate for each T' the associated T, ~ Thy. Then for each [, the associated Tour is calculated and the resulting 22 Microwave Transistor Amplifier Design Chap. 3 (VSWR)ow. This analysis can be done for a series of points on the constant Gp circle to see if a better (VSWR)ou: can be obtained. In some cases, a cer- tain mismatch at the input might be necessary in order to obtain the desired (VSWR)ou. Design considerations involving gain and VSWRS are discussed in Section 3.8 Potentially unstable bilateral case. With a potentially unstable tran- sistor, the design procedure for a given Gy is as follows: 1. For a given Gp draw the constant operating powergain circle using (3.7.4) and (3.755), and also draw the output stability circle as discussed in Section 33 [ie, see (33.7) and (3.38)]. Select a value of F that is in the stable region and not too close to the stability circle. 2, Calculate Tv using (3.2.5) and determine if a conjugate match at the in- put is feasible. That is, draw the input stability circle as discussed in Sec- tion 3.3 [ie.,see (3.3.9) and (3.3.10)] and determine if T, = Py lies in the input stable region. 3. If T, = Pf is not in the stable region or is in the stable region but very close to the input stability circle, the value of I, can be selected arbitrar+ ily or a new value of G; can be selected. Of course, we must be car when selecting T; arbitrarily since the value of P, affects the output power} and the VSWR. ‘The values of F', and I should not be too close to their respective sta- bility circles, because oscillations might occur due to component varia- tions that can place I, and Tin the unstable regions Since G, can be infinite in a potentially unstable case, it is practical to keep the value of G, below the figure of merit value Gusc (given in (3.6.11)}. The design for G, lower than Gyso can be performed with good stability and practical values of the input and output VSWR. On the other hand, a design for a Gr greater than Gysc usually produces values of I, and I close to the un- stable regions and large values of the input and output VSWR. Designs proce~ dures involving potentially unstable transistors and VSWR considerations are discussed in Section 3.8. In potentially unstable situation with K > 1 and|4) > 1,there isa Gp just like Gig in (3.6.12). In fact, in a potentially unstable situation with K'> 1 and |4| > 1, the other solution of (37.6), denoted by ganun i, Hence, 7.10) ee.3.7 Operating and Available Powsr-Gain Circles 253 Equation (3.7.10) gives the minimum value that Gp can have inside the stable region in a potentially unstable case with K> 1 and [4 > 1. The maximum value that G, can have is infinite. The value of T that produces Gynin, denoted by P,min is - Spin) 1+ Bpma(SaP — [4P) It also follows that Pnin in (3.7.11) is identical to Pe in (3.6.6) when the plus sign is used in (3.66). G71) ‘Example 3.72. The S parameters of a GaAs FET at Ip = 50% Inss, Joss = 10mA, Vos = SV,and f= 8GHzare Sy, = O5|e180" ‘The transistor is potentially unstable at 8 GHz with Guso = 14.9 dB, Design an ampli fior with Gp ~ 10 4B, Solution. Fist we will verify that the transistors potentially unstable at 8 GHz From (33.16) and (33.17), we oblain K = 04 and = 0.223 [62.12% Since K <1 the GaAs FET is potentially unstable. Also, from (36.11) the value of Gus is Gxsc 2.51008 = 31.25 oF 149 dB. In order to design for Gy = 10 dB (4.9 dB less than the Gysa), the 10-dB oper- ating power-gain cirele and the output stability circle must be ealeulated, The radius and center ofthe 10-48 power gain etl, from (3.7) and (3.75), are rp = 0473 and C= 0572 [97.2°. The radius and center of the output stability circle, from (3.3.7) and (038), arer. = [Link] Cy = 1.18 [972 The Smith chart in Fig. 3.7.2 shows the construction of the 10-dB operating power: ‘gain circle and the output stability circle. Since |Sj,| < 1, the stable region is the region Outside the output stability crce-T is selected onthe 10 at exactly 8V and 2 mA. Aa} ‘optimization and beta stability analysis of the active bias circuit in this design is per formed in Appendix “Computer-Aided Designs,” Example CAD.A GaAs FET Bias Networks figurations for GaAsFET amplifiersare shown in Fig.3.9.6(3.5]. The dcbias net work in Fig, 3.9.6a requires a bipolar power source, while the networks in Fi 3.9.6b to 3.9.6e require a unipolar supply. The column “How” in Fig, 3.9.6 ind ‘cates the polarity of the sources, a well as the sequence in which the volt ust be applied to prevent transient burnout of the GaAs FET device di furmn-on, For example, in the de bias network in Figg.3.9 6a, if the drain is bi ‘Ampiir = Figure How | characterises | supply used Low reise i ‘opty Vo} Hah gan ar ON] Hih power anarnscoe High emcency inductance © an 4 ‘Apply Vs] same Aap vs] ame asa) | Postive supply ‘Apply vs: [same seeyyo] tcame a) | Negav sunpy aha Unipolar, igh gan High power ‘incorporating Rs} ‘Apply Vo automatic Lower eficioney | transient n easly adjust : by varying As a only Vo] tsame as) | Nopevesmip | Figure 3.9.6 Five basic de bias networks. (From G.D. Vendelin (3 reproduced vith permission of Microwaves & RE) 282 Microwave Transistor Amplifier Design Chap, positive before the gate, the transistor will operate momentarily beyond its safe operating region. Therefore, the proper turn-on sequence is: first apply a nega- tive bias to the gate (i., Vo <0) and then apply the drain voltage (Vo > 0) ‘One method to accomplish the previous turn-on procedure is to turn bi sources at the same time and to include a long RC time constant network in Vp supply and a short RC time constant network in the negative supply Vo. ‘The bias networks in Figs. 3.9.6d and 39.6e use a source resistor. source resistor provides automatic transient protection. However, the sour resistor will degrade the noise-figure performance, and the source bypass ca pacitor can cause low-frequency oscillations. “The decoupling capacitors shown in Fig, 3.9.6 are sometimes shunted wit zenet diodes. The zener diodes provide additional protection against transient reverse biasing, and overvoltage. ‘The de bias network of a GaAs FET must provide a stable quiescent point. Itis not difficult to show that the negative feedback resistor R, decreas the effect of variations of /p with respect to temperature and Ipss. ‘The selection of the de quiescent point in a GaAs FET depends on particular application. Figure 3.9.7 shows typical GaAs FET characteristic with four quiescent points located at A, B,C and D. For low-noise, low-power application, the quiescent point A is recor mended. At A, the FET operates at a low value of current (i¢.,os = 0.15Ipss For low noise and higher power gain, the recommended quiescent poi is at B. The bias voltage remains the same as for point A, but the drain cur is increased to Ins ~ 0.9Ioss. ‘The GaAs FET output power level can be increased by selecting 1 quiescent point at C with Ips ~ 0.5/oss. The quiescent point at C maintai class A operation. For higher efficiency, or to operate the GaAs FET in Io (ma) loss| 0.9 Ioss| 05 loss 0.15 loss 4 10 Vos) Figure 39.7 Typical GaAs FET characteristics and recommended quiescent points problems, 23 Figure 39.8 Active bias for a common- source GaAs FET. AB or B, the drain-to-source current must be decreased and the quiescent point D is recommended. An active bias network for a common-source GaAs FET is shown in oo is sh PROBLEMS 3 (a) Show that Gp Gand Gr Gp When sth 1 Gx and Gr= Gy When's the equality ign satis? () Showtha (223)ctn eabaned ttm 2.21) when, = ER and) fom (3.2.2) when Ie = Pur. J — 32 () Show thatthe trascer power ain s given by Gr=|S when the source tndlnadinpedancesto the transorarcequalotheeference peda (usually 50 Q). " sdanes 2 0) Determine the expression for Gy and Ga whe ances ae real and eq 2 33 (@) A niciowave amlier diagram is shown in Fig, $22. Determine Gr, Gu the source and load imped: and Gy ifT, = 049 |-130°, T= 0.56 [90° and the S parameters of the tran- sistor are Sy = 054 [165° S,, = 0.09 [20° Sq = 2 [30° Sax= 05 [80" ‘34 The S parameters of a transistor are S Sy = 02 [30° Sy=4[or 5. = 05 The transistor is used in th inthe amplifier shown in Fig, P2., where the output match ing network produces T= 0.” Determine the valucs of Gr Gy ae ©

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