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Diode Rectifiers

Le document traite des semi-conducteurs, en expliquant les concepts de conducteurs, isolants et semi-conducteurs, ainsi que les types de semi-conducteurs (n-type et p-type) et leur dopage. Il aborde également le fonctionnement des diodes, la formation de la jonction p-n, et les caractéristiques des redresseurs à onde complète et à onde demi. Enfin, il décrit les applications des diodes dans les alimentations électriques et les transformateurs.

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4 vues34 pages

Diode Rectifiers

Le document traite des semi-conducteurs, en expliquant les concepts de conducteurs, isolants et semi-conducteurs, ainsi que les types de semi-conducteurs (n-type et p-type) et leur dopage. Il aborde également le fonctionnement des diodes, la formation de la jonction p-n, et les caractéristiques des redresseurs à onde complète et à onde demi. Enfin, il décrit les applications des diodes dans les alimentations électriques et les transformateurs.

Transféré par

rdd.stb
Copyright
© All Rights Reserved
Nous prenons très au sérieux les droits relatifs au contenu. Si vous pensez qu’il s’agit de votre contenu, signalez une atteinte au droit d’auteur ici.
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Téléchargez aux formats PDF ou lisez en ligne sur Scribd
Unit 5 = SemrconpuctorR, Drone —~ __ Hone stead : “@ No--of electran ineach orbit = 1p” eee one oh Stopbit = oxj7= 9 Wudewe ape TNA E on Mohit = oxvo%e N= frotonstuboy | 3° agbit = 9x 3>= 18 level —__ | Energy --———} FF rorbiddenifap sd ence g j Flopece hand 994 _ es band. : ist ———— _ Material Classification —~ i | DH Gnductor = — 2) Tnsulstos 2 Semicanducan gt ~__Se nalcon ductoe —___ Tatum: c E tal fi _ : eg: Si + : - Ge —Dtype __ptape 7 Tntrinsic Gemiconductan = : [ - — Pure =Tetravalent C4e in valence Worbit) zai =—At room temperature insulator. L =—As_ temperature Inciease: Conductivity decteases | 7 ntype i f : -pAype: at __ Combination af pare § impurity semiconductor | ——| Doping = “The process oft a L || 1S called as “Doping? ee —__L Extringi type Semiconductors — clecsoute Y ne Date. — pure + donor \mputity Page a. = puse + se in valence ombie ed a | =—th1s_farmed_by adding a_small-amoint-of— | f entavalent impurity ——_______— aeenenee ee _=— then entavalent umpurity sushas Arsenic I's __ “added +o the intrinsic semiconductor, 4 valence eo -_ A. o-tam fon. 4 colalent bonds with 4 valence es _neighbouring i_otorn___— = oe eth - of AS atom cloes nat have o chance *0 nee bet form _acovalent bond. — ____| = _this_addithonal valence e~ which con enter in Con-_| ducton_band- i = majority carriers _—_=— “freeea | a —yainanlty _carriers — hales _ \ 2, p-type semiconductors — __ - fe + acceptor - = valence orbit. 7 = _. = rivaled mda atoms. ~ Gar atom isiadded to Si base, its 3 valenc will form covalent. bonds with valence es _of 3 Neighbouring — Si-otoms— —_ __= hence. Fourth -Covdleot band “pemoing_incompleh | as Go otém has only a valence e7. = = Vacancy —called as_o_hole. Tt is +vely~ charged represenks -[Link] =ve change majority carriers —— holes |____-noinority _cammiers = electrons ee Covalent bonds of Covalent — v T Role created dueto incomplete bond _ pare si atoms, | n-type emiconductor p= type Semiconductor ~ @_||_e-N Tunchon = Diode = Atoms with Tuncton_ WS ues eee poles | ons ymbol = ~ or Cs > : [L Broce AS athode _ | e 0 (heemally generated APL IN 1 e bole polrs., T= Formaton of P-9 junchon— z —Diode_is a device having 0 electrodes. —____ ~_Tt is basic building block for electronic_deu'ce — =P type -& _N 4ypesemicandactor are joined_ — __togethen withthe help of special Fabrication — proce: Dei ~ atoms in _N=type— donate 27 & become tvely —— charged-6 = — | Formation of depletion layer = —— ~ Theatoms in_n_type diffuse e7s _{n_p type —_— = atoms _in_n-=type hecome.+vely charged | vans § atoms uihich_accepts—e-s_became- = negative fons. The layenot-+tvely classmate charged tons & negatively charg tonst's called ‘de pletio wegion” = [p77 barvlen . . ~ Be renttatt or tonetons — ental o a — ~ polentar i > O a i | +6 . = | ane dé : 16 : Cathode i : ae Hon region H Barrier PotenHal~ Due ‘to presence. ot Imrmaobile— po. “positive. 2 negativi negatit loms_on_opposite sides cf — | juncHon elechio Held For Si _2 OF Vy Ges ogy @_|| Forusqnd Biasing af p-n junchHon Diede— tades ae e Deplehon layer | __»— a N A ise holes ee 9 © eee ° > Te 6 z “oo BI = 7 a [= —peside— negative terminal of external De saurce = free electrons fro. p-side: 8" holes fram py side 4owands n-side— ee sits inctease in _external_supply voltage [Link] || to ward t b -e_ start travelling — 18 fin cite $$$ bs hole converts negative jane int neuteal atoms § eS will convert +ve ‘on into neutral — ee ee | __meduc e. PDuetothis, barrier potential eusill be — | reduce. value of Vv deplehon region will collapse — | = no_epposition. toFlaca of es & holes. ____— areal iatst - ®|| Reverse Brasing — Q & vigde a ae PSH peplehon wegen ae = Shee 7 is ¥ C18 B<—0 ae =i }+ | Lee BB ite : | —> — Vo ees ft a — _o-holes,; St eeab in T* - holes of p-reqion are-abtlra ted tawards-ve termind | erssen-n-side are arate | tomarde tue terminal 7 __ | Width ‘of depletion région Inereases.————————__- Due to the creahian of more ntimber of +ve 8 | | ___ ~ve_tramabile ton - Ge ee = depletion region gets sul ened. _ = _p-megion_=—_small_no-of 5 a eee eee _| = _n=region oall_no-of 8 - = “sin _pregion ore_attracted by ctve end ofde —_| upply—_“fhe _revers e current ts also called ad the fReverge Sotumation Cippent” \_ Te the neverse voltage across_odicde t equal ta} or greater -than—a voltage called reverse break } doaih_Veltage--thena large-reverse curse t stars 4 2 Plowing s+hrough ib. eee ee eG @ V=T characteni stics.— Toe ry |e en eee = forward cunrent tlo- ——+r 1 Te Croff) -taing through diode 1s small. i Breakdagon Ch eorward « B ta C : a 4 id vg Ly chawocts = Current increas L - vb Be f + Cuk-in Valtage_on Knee Volts = [p= 4 ye ae The vtgatutbich Forward + Revenge _/ Reverse | _cubinuta __diede current starts 1 __ es lr known as the —~ : ‘ —— ‘ cotsin’ volbage. + Application of Diode— > Reg wlated _elnssiate, a | tip Ac —ro/pPc. Power supply — f r = _| Tra nsfarmert—|Recti- [TEE Hee Fh ft), . I ‘fen | alread] A renliien Load. | — TY Pulating SET "| De consank _ FIIRY Srila yt Vo SR —} TWO Hn \ a _. @nstant ~ DC € ulated Power Supply is used 4a Gonvert unee- | quiated AG" into constolt_ DC Transformer] — T+ converks high v “AC Signal [inte required AC_signd} ——______ | i[Rectitiew | — Converts AC into. Pulsabing be {emcee = Tt iemaves ‘tipples fram the pulsating srectifiewr ofp Ease lee ene enese nae aT c “Tt _pemove_alll “the fluctuation tram the inpal_sighal_and_frovides Constant Do — output - [Rectitfen rf oe ee [p-clesisania devise sohicht is used for converting —o Hernating vigor current Anto_oc. vtg or corrent Wypes of RechHer — oo Holt wave Rectifier Ful) Wave rechten Centre 4 tapped Bridge i Hol? Wlove Rechifien — a1 | th bi oe _ pommel fil Be : Wo Was Ynsin dtl | o< Deen | ‘ step B. Vo=:0: down Soannee aa TOE L2T1 ip to 7 —P = Diode. — oe AC _ Vas i f ml o Ne jen wWteO me = “ EZ Pulsating a de fe Zeal Dew e + + - ~ _ Don i Doce a | Ws odie _ - | "Working af step down transformer = oe ae ee eee er ea wrhich converts | ob b Voltage at primary side to_laud voltage — 1 at__Secondary side {-e. the primary ——___}_ winding ef a coil | Pa | 4} _ condor y winding. a D Positive Half Cycle of LIP AC Signal. cente —» terminal A fs positive ,while that Se—— C) of terminal B is negative : Thén pe m—O) diode is fobmard biased —> TT Plows thio Pied > Rr il hen the smitch is closed. C hess Died) E(t = I/p. Vouk= +ve hed eycle. 2LN Ne eqative ao a gnal. — ve B=tV eet rn is eereirs d = t=o0 a ad Then the switch 18 open wottoh. Cfeuss Died) = o]p = 0 Efficiency of Half Wave Rectifier — Effier = o]p Power CPde a =/P power _-CPac) Noo = Lie Re 2 “Tyr, aE N= tae Ry r RB, C as f Sms CTRERO Tde= avg = Area of one cycle q length, one cycle = (ide + Mode 2 > ° Tr 2 Tye= Tavg = { tmsined© +6 an = Im (-coso]" 27 2 = im (-1-1| — 2m Tide = Sem G2) = + im =+0g Tp 21 Tl classmate. eee eee + = Area ot One cycle af ie lengtn of one cycle | i = | Cid + (odo : ge | A 2n a Pane in’ad@:+o = | i Cee +R) = 4 RR ~ oa Pet th) — CRU Ru _ = 4 fe : Ue te (4) aS mp Cc charge » 7 Vin < Mi C_dischera: { | Vo qT oe | aie o-A— Diode - FB _ Tstharginge i => nee starts decreasing = capacttor - discharge = pacitar® -6tdps- cho igteg ——__+ upto next ve ui : —fapacitor -__ fei ee neh “filter — Bo _ step Do s down tronsformer _ ee : a} io Mo =Mins yep : 2 [ a Vin oa Se ee - —— Y ST ae - = _ VO Or Tm D2 oN on - = - ©_| Bridge Rectifier with Capacitar Eiltep = ° = Py ; 5 a Filter capacitor ut 230V & \ eV, he DE _ Lr I an pet es OFF | ON} _ [ON | OFF | Bal | = The load voltage wavefarm is exactly same_as that || for o FIR with capacitor filter —— ~The only change is that there} here tuo diades: “ conduct simultaneously instead of one in FAR. = Oto A = p,§ D2 oN, Ye _ $ _\- 1 Chonacteristtes = te aan Pee ee | Forword Zener, breakdown | ] Characteristics _ a | .vottage 7 ; : Veo \ & Reverse as [ — : araration “ft Reverse | t _ chreat + Characieri- | | Zener (fp 23 _ SHee y region Te, _ Zener diode as Valtoge Regulator = $e Lz vote 1 Vio. pe = : tote teh ieee IL = constant} tr=ft, | in 4 Vin-Te “= buts Vv =sC1) = lo 2oV -loC)= lo i | osv~—Ist)=1o0. j__f_zener diode canbe used as voltage requlator| to provide _a_constant Voltage frdmasaurces | -whase voltage may Vary over sufficien + range. hy eee Re 7 =| 9.1) loV => Tnput voltage 2 R= 1-2. | {O~ox! =1Q _ i DIS V > Vin & R=) | | Sean seal) 20 = Vin § R=12 | 1 20 Flox) = 10 J 1 }-_tlhen _I/p wWtq increases, total current + } increases: :& Vout» Remoting constant Total Current 21! = Tp4T) iE lalhen we apply oO reverse ytg ito. ee | than breakdown wal toge is_applred zenep | |. break down occurs, J |= Ab vs Czenen breakdown) vig = Significant —i| ———amount_of current flows through the diode | 4 |___diode a ‘negligible. omaunt of current flow —through the cineuit . then o voltage higher 4 fi —____3 —| with negligible drop in voltage. j=— when oe increase reverse voltage, the } -| _voitage across diode remains same whereas | classmate. the current through it ouspur level 1 | _ Pa Light-Emitting: Drode .-¢ LED)-= 1 _-____—_|— ms RASA Light. Sym bol= Basic layered emits hight small. rerlectve Structure — UP it Anod cathode — _ ~— Same as that of P-P IP Gthode___{unctton diode with 2 Anode 5 QPrOWS inclrcoding hax yy 7. Conver 5_clectric energy indo light energy — | Eo Works in Forward. biasing eS Go fis_— ES) Ne Geos Ga (materials - | a Gofsp- |. for 1ED | TnGaP 7. + ! he = LED emis light when electron-hole recambioahias— — fi PN Junchon is formed between the anode |! —§ cathede. $0 LED 1's PN: suncton diode + =. Active regiom ext ts: bet? p 4 n regions} | the. Light emerges ‘from _active.side inall —_}- | directiong when e- hole pales recombine. ——__}- - Disadvantage - LED ermitslight inal] ahesn the clirection. I+ 1s Solved by eee basic structure of fig inside a | Small reflective: cup so as to Focus | to Focus the sg hte In the destred direction 2 - aah uch a structure ts called + -Paregion _ las acuptype construction + a Active. = & this showa in tig. Af n-negian _@ VT Formand = | nen -io A “Reon? ven - + y= PRH =~ Electron ip_n-negionanill cx0ss_funch og recombine ti th fh - i free e ne neatde incrandoction hand & hea hence ot a higher energy level than the holes tn valence band. — e"s_ retyrn back to valence-band which fs ata lower energy teve| than the conduct'on- band. = This_process stalled os s*: \elettvoluminescend = “Energy of: 2 conduchon electromagnet band 9 pode sq = bf Forbi- | light ofp fe, __h= planks'constee + ddeo | — = photon +. Eq at aed Recombination | = visible light is gop | | of hole § e7 _hraher = lol He 7 | oe Valence “3 ; = £ band. Inv ible lig htt is small = 10h a ae _@® ‘Applications oe oe — Inthe optocouplers pase _ — tithe _lnftrared remote contrals. _ = As lndicators -in-various ‘oleckanie cineuits | —__|L = Th seven segment § alphanumeric displaya.|_ © | Seven Segment Display = | = Enom thi _we can display any number | | from 0 to 9 by turning on various combin= |. _atong of seqments os shown in Toble- : — . For ¢-q-~ if weimant todisplay the number | _. 4 then the seqments a+b & C should het uined | on all other segments should be off. | _ : -Gegmeots 3 amber [Displays 7 a [lb c dj el fla alas [ _ LC oN [ON lon Fon | ontontore} sty} Ut | OFF| ON [ON |oFF| OFF OFFIC) + | oN |on—| ofe |lon | on}ore| onl C) a | on | on | oN JLON | bEF | OFEON |} CS) TS 1 q ofF| on | on lore} ofe}on | oni Ci) My on _|_ore|_on fon | orelow lon ts) Ts Fon | ore | on|on | on | on | on|} Ce) fe Ton Lon | On lore} oct lore lore || cm) as i on | on | onton'|| on Lon Jon |} (8) [et Nlon | onlon | orrlon ton | co |e i | @| Types of Seven Segment Disploys — hasenate. There are 2 types of seven segmenO i 1 _ LED displagqs. a _ Bie ECS roy OC Cl ee ——} _ +__Common cathode. ee _ tll Common Apode == common anode, = All_anade cannechians | eS eke st ei — of LED segments are_ : ibs 3S S its fo || joined together to ____ ce SS ee 3 dogic “1% 4, Sie . i ="Th individual segment SI Pg pe =all cathode _conne: | Ce paz | anal SetfonSiof LED segments! de. ge | meg F - ore joined: together to | - a ci leg ea ao ef Iso meet gC SALE (QEEIC ground + | is Kee | sr 8 || The individual segme- | Ge +4 ae nt sare illuminated ya application of a “HIGH” anode. or_logic 1” ignal_uic_a current: Frage paimiting esl ta forward bias the individual | Anodeterminals Ca-9) Then various digits from o throug h hd_combe dis- | feet ee ga ag _j 1 _ LA ofl j # Pe} ; tt i af hal aT a = | = — : “A Se a qd Photodiod€ — __eheenite Date Paar nyp Gloss window (2 se k—melal __ L ties ; ] oN ml pnade _\L 7 cathode fl tap pabol._ . a [ 2 waapke (n ‘Reverse, bing — ~ ea pode (onvects light energy —>_ Electric. energy i = __gide deplehion region 1 electrons & holes ill be ott rented ! ee positive & —hegative terminal. _= Increase tn_|tqht_ intensity = more noof | |___eo ~ hale _generoted =% Photaturrect inerensea It Thus the photocumrent {6 __¢ oportional to lig ht inten iby [ = Reverse biasing — _ - VS paddle Nhe Z 1 Mon |S6E VR - 7 oon LL LLLLA Wve ore Ff volts) 4 = L“pask current = : PifocoeFE ae Le as cua) - : t Reverse - — — current Tp Tatensity Dark Current — — itis carrent flowing throaghia photadiade in the absence of I'qgh F & hence increases with incréase in temyp-_ enalure. = _Ip_depends only on_iniensity of Ligh to incident on junchon, i) Applicahions — © C.F Probaiod om, =te_the cameras fon—Sensing the [igh iniensiy In the fiber optic receiver ii] rn hight intensity meters. - Biasing - woking Phote Hoda) Reverse bi means +thad the P-sicle. 2 photodiode. L i $ be ls _comnecteo| +o mgahve tesoni athesy - a] semil_ceverse cattend Af theough —Dioda clus cminosi+ 4 bh sige corslets [Phe ebidlinds ‘ 1 b moth. vnusubet eae natlecy aes Exgion: - teanspee i] coking wo useb| ts atloc Li Ligh fe fohen light CPhotonsd) enters depletion _£eglon bans in the outemast « bit be of done betoche 1. | Dee +o bai} im electei fiele| } abe ple tian fxg) leche —imoves’ toward +ve 4 holes move s_ | domes) —ve pofembral, wate pet Deer th en: ) lechoant mover suates pales Custemd- _ fe _Inbensit rel ‘Tinos tye terminal “af tha tty df custend pes sity p—_In c£e - : Appl cottons a4 Pha dine eae i ) Maem —cistart casing Phola-clind e. _ ig Shouss the use af. a photacrocle |r abaso - —|ayclean Light Loma ~——ighd_souisce is abbiedl pa —_ Ho fat) on ‘photo diode |ecix fitkec| in the coat way ‘The sevesse Cuysenl! Tg! co)ol finue. + flows — |. nyo Hele beam is not beoken th pecsam passes th ag ls the coos byht- bear js broken ane evers cussad J P. te dark cust lox]. ac esl db alaton is souncledl DB) Goumbe Ceca usin oda. > PD pholectioc may be used to count itemy on convegos, bel}. : photo cliode, chee used in Shows a —> fg e syslem athed counks objecds oF the 4 pas b comveyos, —> “Im this elecas} a sousce of Seg ht cends- a conentiate beam o Light © actess disc. conveyer, do photo . object posses the Ligh beam is goto. —s Tp deops sto cloek cust level andl co incised by on |

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