[BE 3272- BASIC ELECTRICAL, ELECTRONICS AND INSTRUMENTATION ENGINEERING LABORATORY MANUAL LOAD TEST ON DC SHUNT MOTOR Date: y213 12 AM To draw the performance characteristics of the given DC shunt motor by conducting load test. OBJECTIVES 1. To determine the efficiency of the given DC shunt motor by conducting load test. 2. To find the various parameters such as torque, input power, output power étc. 3. To obtain the electrical and mechanical characteristics for the given DC shunt motor. AAPPARATUS REQUIRED . [Link] | APPARATUS NAME | RANGE TYPE | QUANTITY OL Voltmeter (@300V) MC 1 02. Ammeter (0-20A) MC 1 0. Rheostat 360Q 715A | Wire wound 1 08. Tachometer - Digital a _ZORMULA USED 1. Torque (T) =(S:~$2) x Rx9.81Nm Where Si, Sa Spring balance readings in kg R - Radius of brake drum in m. 2. Input power (P)) = Vi x IL watt Where V.- line voltage in volt I. - load current in amp N--Speed of motor in rpm T Torque in Nm 4. % Efficiency (n) = 2 x100 Where . Po- Output power in watt P\- Input power in watt/SERCUIT DIAGRAM: P 3600/58 \ 1 + 1 1 : nw (@3001) Mc — 4 ' { i t sso Hi a Name Plate Details Power [vanes Current ‘Speed 3.5 ku 220 18.6 [ovo Ue : ee 120°7 of staked cuuient * La x 1.6 = 22-3BE 3272- BASIC ELECTRICAL, ELECTRONICS AND INSTRUMENTATION ENGINEERING LABORATORY MANUAL. T Performance Characteristic aa’ oa é sla Beles eyelet S(E\8\§ (5/2 Sle (FS 2 5 Efficiency Une Current Torque Speed Mechanical Characteristic speed in rpm TABULAR COLUMN Circumference of Brake Drum =27R= O-b4- = m Radius of Brake Drum= R= _O+ | m Line | Line | Speed a Output | Input 7 si. | Voltage | current | ae Torque | Power | Power | 65. No| Vi | om) ere] Wm | Po P, rea (Volts) | (Amps) Ke K& io (Watts) | (Watts) 4 *|a20 [2-4 [533] 0 lolol] 6 | O [sae 9 2 220 [ku ltso7] 1 |b 2-W3]4b4-2 | 46R py T-A By 220 | 6 |h35| + |7 | b [5-ee6lan-s |iz20 |o7.3 + a Ce CU i a ee 5. 220 | 10 HAS bre] U1 [ro 741[685= 4 12 200 [1-3 | 6. 220 | 12-2 \J,92} 5 | 20) p> ty-Tis 219%! | aE@y | P= S 7, 220/182 [mie | © [22] 10 bse fasaval agon [oor | 8. [ “| 220] i [mor] 7 [oy Viivetlaysei 30% 179.8 MODEL GRAPH > Output power in watts Tore ein om OK oT oyPROCEDURE 1. Circuit connections are made as per the circuit diagram shown in figure. 2. The supply is given by closing DPST switch. : 3. The motor is started using 3 point starter. 4. The motor field rheostat is adjusted from its minimum resistance s position to get the rated speed. 5. The no load readings of the voltmeter and spring balance are noted. 6. The load is increased and voltmeter, ammeter, spring balance readings & speed for various load currents up to the rated current are noted. 7. Performance characteristics are drawn from the tabulated readings é calculated values. De MODELCALCULATION Toute (1) =fs, usa) x Rx4- 81 Nm 3 bulpuk power (>: aut. wath (sSQ2h-) = R= O-lm N=1S07 Nm T 23¥0-1%4-8) - Ese eles ea Pos RAKZIR AxB Ie KISOTY A T3 ¥2.4 [T2443 Nol se 2) snguk pow lPs= Viv t. wath reer Viz g20 vols Sys ph Vou 00 Pi = 4b& wat eee oat 2 neaeke RESOLT Department of EEE, GCE, BodinayakkanurBE 3272. BAS! 'IC ELECTRICAL, ELECTRONICS AND INSTRUMENTATION ENGINEERING LABORATORY MANUAL ‘[Link]: 2 OCC AND LOAD CHARACTERISTICS OF SELF Date:y 2/3 / 2s] EXCITED DC GENERATOR AIM To conduct a suitable experiment on the . 0 ca a given de generator and draw the characteristics of the same when its field is self excited. a OBJECTIVES 1. To find the generated voltage (E,) of a separately excited DC generator for different field currents (I) by open circuit test. 2. To find the armature resistance (Ra) 3. To determine Internal, External Characteristics of given DC generator by conducting load test. APPARATUS REQUIRED [Link] | APPARATUS NAME |__ RANGE TYPE QUANTITY 1. [Ammeter (204 MC 1 (@2)A MC 1 2._| Voltmeter (0-300) V Digital 1 3. _ | Rheostat 3602/7 15A | Wire Wound 1 3600/15A_| Wire Wound 1 4__| Tachometer = Digital 1 5,_| DPST switch = - 1 6. _ | Loading Rheostat = = 1 FORMULA USED E,=VitLR, Volt ‘Armature current, I, = I, + Irin Amps Where E, ~ Generated emf (V) Vi - Load Voltage (V) I, ~ Armature current (A) Ry ~ Armature resistance in ohm PRECAUTON : . : . The motor field rheostat should be kept at minimum position at the Hime of oe : 2. The geferator field rheostat should be kept at maximum position at the time of startirig. 3, DPST switch 2 is kept open during OCC test. 14. SPST switch is opened at starting to note the residual voltage. Page 5 ‘Department of EEE, GCE, BodinayakkanurCIRCUIT DIAGRAM: 3POINTSTARTER mane + HSE r* LF A re 360/154 sot! 4 u SOQNSA ih 6 $ nov ; ‘DCSUPPLY 4] é AR "4 ye 6 6 £ lt ‘ faa Sade Bz Fuse \ Name Plate Details ¢ Name Plate Details Power | Voltage Current Speed Motor 73.5 | 220 1866 [S02 al Eoo | Eaee (6 (ro? Gwe nabng s- No Aeadeno'l. patel gcuwank : 5 295 K1Bsb = 3-72 oak” 120). rated (Qo . too XS b =2bo3? ——— Department of EEE, GCE. Bodinavallr naBE 3272. B, ‘ASIC ELECTRICAL, [Link] INSTRUMENTATION ENGINEERING LABORATORY MANUAL, TABULAR COLUMN OPEN CIRCUIT CHARACTERISTICS TEST OF DC SHUNT GENRATOR [Link] | Generated Voltage | Field Current E, (Volts) 1; (Amps) . 20 © a so o-oo} 2 100 o-12 = elit | oS2) 5. 200 0-56 6. Ft. 7. 7 8. LOAD TEST ON DC SHUNT GENERATOR LOAD TEST ON DC SHUNT GENERATOR Generator Armature Resistance (Ra) 2 | Generated emf [Link] | Load Voltage | Load Current | Field Current Sees oye ee ‘ (Vp) (volts) | CL) (Amps) | (1) (Amps) ‘ae wuts) : 221. Loe 1. 220 o Oo: Th O-Th a : ts2 217-8 2 ee |e ord 0-72 aoa 3. 210 tek ob. 70 2.) : 4. 205 2h 0. b& 5. 200 be [Link] G 185 b ob 7 180 38 0 fab 2 bs: 9 pb 3h 9. ies Lo 70.32 10. [bo to-l o-3“AO UA LUKY MANUAL PROCEDURE OCC TEST By closing DPST switch 1 & using 3 point starter the motor is started, The motor field [Link] and the rated speed is set The residual voltage is noted down from the voltmeter & SPST switch is closed. ‘The generator field rheostat is varied and the generated voltage (E,) & corresponding field current (Ij) are noted. 5. The same procedure is repeated up to the rated voltage, Bey LOAD TEST 1. The DPST switch 2 is closed when the rated voltage is reached. Then the load is applied using loading rheostat and the load current (.) load voltage (Vi) & field current (Ii) are noted down for various load cufrent.. 3. The same procedure is repeated up to the rated current MEASUREMENT OF ARMATURE RESISTANCE Connections are made as per the circuit diagram. DPST is closed. By applying the load in steps and take corresponding meter readings. This procedure is repeated for three to four readings. Calculate the armature resistance by taking average of the above readings. seep 6. Load is brought back to zero and open the DPST switch. MODEL CALCULATION Eo 4° Vi + Taka Vv, 2900 Vets Fa. 0-7h Amy Ra r\.4 ( ) Eq- prot (o-Th)# 14 7 22]. bob. Vv 17 Page 7 Department of EEE, GCE, BodinayakkanurMODEL GRAPH OCC Characteristics E, (Volts) Residual voltage Load Characteristics E, vs. I, Internal characteristics [Link] Vivs. I, External characteristits Es. (Volts) Field Current, (Amps) Department of EEE, GCE, Bodinayakkanur Current 1y,in Amps Page 8RESULT mance chanackertubic Oo Given Oe AbstE9772. BASIC ELECTRICAL, ELECTRONICS AND INSTRUMENTATION ENGINEERING LABORATORY MANUAL LOAD TEST ON SINGLE PHASE TRANSFORMER AIM To conduct the load test on a given single phase transformer and draw its performance curves APPARATUS REQUIRED SNO [APPARATUS NAME |RANGE [TYPE] QUANTITY 1 Transformer = E 7 2. | Ammeter (1A | MI 1 (0-20) A_|_MI 1 3. _| Voltmeter (s0nv_["Mr_[- 1 (0-150) V_[_Mr 1 Wattmeter 300V/10A. UPF 2 FORMULA USED 1. Percentage of Efficiency = % x 100 W, oy Va-Van 2. Percentage of up regulation = ———— x 100 3. Percentage of down regulatio: V, x10 ‘al Where Wp = input power in watt i ‘output power in watt ) ull load voltage in volt no load voltage in volt. PRECAUTIONS 1. Fuse should be selected such that its current rating is 120% of no load current of the transformer. ' 2. The DPST switch is kept opened at the time of starting the experiment while giving connections. 3. The load should be in the off position while at the start of the experiment.CIRCUIT DIAGRAM 300V/ 10.A/ UPF- 300V/ 10.A/ UPF i i i Shi isi L040 iON i le if ea Woe pitt L—.—.t 230/115 0270) V ‘Transformer Suto Fransfomer NAME PLATE DETAILS Power [Rated Primary [Rated Primary | Rated Secondary Rated Secondary Voltage Current Voltage Current 2xvA | 220 10-32 thee 20.16 Typ =o/P Pa=2VA . Fuse rating / A* 2KVA VT ge 24!° 12071. of raked cusient Vidy = 2A 1ysyFge 2RIO 120. 486 +1032 3 RIOXT |= 2KVA te xD = 240 ; 3) = 3 120 x17. 32 20076 - Tt = Ane Ty > VHIC [oo 1 ao . eo Dy =bA. Ty sltaa- . Tol ‘of EEE, GCE, Bodinayakkanur Page 10 Departm:Mpa=-fe MF Primary Secondary Primary|Primary| Power _ |Secondary|Secondary| power SI. [Voltage] Current], {Voltage VJ. Current w, __ {Efficiency|Regulation Noy Vo | tp J Read [Actual IF Read | Actual up] Down volts | Amps | watts volts _ | Amps watts % % 1 |230| © |20 | go go loc |olo oO @}|o 2, | 28 | os | 70 | 220) tog | 2 t20 |24Ho| &BE.7 [tees | 1-8) > |aet [ts | t30|s20] tow | 4 [aso [500 |au.)_13.77 [3.3 4 |22n | 9.7 |1@0/720) fo) 5-6 (840 | 680 (Fhe Wy | Sih IE hy #0 [222 | wy [290 |e] tog | G8 |sHo [1080 | 42.1 | [7 84 7. a7 6 7 8 MODEL GRAPH: Efficiency 3] 2 Zz 2 Down Regulation Beis E > & o x | 2 s LOAD CURRENT (A) ‘Department of EEE, GCE, Bodinayakkanur Page 12&: a & | | weweuve VeMuMvelNvMe lS Ul! vv VIVA QUESTIONS PROCEDURE The connections are made as per the circuit diagram shown in the diagram. The DPST switch is closed and the supply is given to the circuit The no load readings are noted. By varying the lamp load in steps, corresponding ammeter, voltmeter and wattmeter readings are noted down, 5, Thesame procedure is repeated up to the rated current. 6. All the readings are tabulated in tabular column and required quantities are calculated to draw characteristics curves. The efficiency of a transformer does not depend on KVA rating. True or false? State the conditions under which the transformer efficiency is maximum? Explain why the efficiency of transformer is very high compared to other machines. State the conditions under which OC test is conducted on a transformer. State the conditions under which SC test is conducted on a transformer. State why the open circuit test on a transformer is conducted at rated voltage. What are quantities that can be found from short circuit test? Explain why only a low voltage is applied to the transformer during SC test. Why transformers are rated in KVA? 10. How is magnetic leakage reduced to a minimum in commercial transformers? Pp ernanwe ene te Pouenckage 64 efficiency * Wen too= PAS Kl00 = 85-7 de Prveentage + UP segulaton : “ L x10 dts) yloo = 1-85 3. Ps of Down Lon Nal-Vfe yipo= Mo-t08 yjoo 21-84 Val to RESULT Thus, k tondauct Hae Aoad dod on a given Aisyle phe dbansfore arp “Ue Peon. fabuin Wer talowlesed - : Department of EEE, GCE, Bodinayakkanur Page 13To conduct the load test on I Induction Motor (Capacitor Start / Induct nRi \ plot the performance Characteristics curves. ut) aleD to APPARATUS REQUIRED: S.No__| Apparatus = Range Type Quantity 1 Voltmeter (3009) MI 1 2 ‘Ammeter (0A) MI 1 3 Wattmeter 300V/10A UPF 1 4 ‘Connecting wires ae 7 FORMULA: 1. Torque (I) = (Si~S:) x 9.81 x R in Nm. Where, S1, Sz are spring balance readings in kg. Ris the radius of the brake drum in m. 2aNT 2. Power output = in watts Where, Nis the speed of the motor in rpm. Tis the torque in Nm. 3, Power input (Pi) = Wattmeter reading in Watts. | Output Power y499 4, Percentage efficiency = Fr Power 120, Ne 100 , where Ns= Synchronous speed OL -as00 rpm N, 6. Power factor (cos)= Pin / (Vi.* 1.) 8. Yeslip = er nee Hedinavakkanur(Mo) |) =wearey aal so HS OK eps art edwy AOET =A — Panay poor ly 1.0% | azl= Wdy ~Tgreg 2g “Hay = by *STIVLEC FLV 1d SINVN “ONILVY Sn quawasucury umig exeig Tod . OLOM NOLLOAGNI ASVHd TIONIS NO LSaL GVOTet hove isa ofsthat ler ei foziz] aes] all 41) 4) ugly | ose yor bez b hore wLIG) |eae F1}9907). G05] OI! Sl) ¢| Eg hy S:o)| oe “Ve fob] gal ruailscaupesy| aay) 4 bil ¢ a¥4) 0) | orz ELTIT>3| hie a| suci| bys 3] ood] ole] £ Hl bsty L re d! | stzdpas: @| 9-951) sob-4 | ohalagz hcl ¢€ ft] op ore 1'0] OA |sozo] oO a 098] Ob/0)0|O \sury| gy Orc 8x) | wp | @: @d ] ow [2] Eo coy : (@ seg) | sem py | 36 daym | yo, m to, | PS | wea | woo a ae aS x % 4 21M) ! ane #emog | nding |(L) anbioy] sweat ut Gwsupeay poods, peoy PeOy Caromod nduy) 2 UeIEG Suuxds Yea‘“S¥MENTATION ENGINEERING LABORATORY MANUAL PRECAUTIONS: 1. The auto transformer should be kept at minimum voltage position initially, ~ hould not exceed 120% of the rated current for the long duration. PROCEDURE: 1. Circuit connections are made as per the circuit diagram. 2. The supply is switched on and rated voltage is applied to the motor by varying the auto transformer 3. The no load readings are noted and tabulated 4. The motors loaded in steps up to 120% of rated load. 5. The speed of the motor and the reading on the meters were noted and tabulated, 6. The motor is switched off after releasing the load completely and keeping the minimum voltage position in auto transformer. 7, Plot the performance characteristics curves.OP VsTeminal Cae OP Vs eed O/P Vs Efficiency OP Vs PL OfP Ys Ib I Output power > (RMP) (Nm) I MODEL CALCULATION: s)fowes input Sbo a ) Toupue (x)= (5-82) 9-81 RS en] 1) 9, idieney - ouipetfowr y/o 0 FAT y REE ) “ti Tag po =Tse-b noo “oho * ‘ie: 12-1 5) ig? WN NW 00 oa 448 yi0o 1520 : Pew oubput = BINT wn = 27 x 1H 98 XO wa Go =013 jodinayakkanur Page 22 EEE, GCE, B . fies PU Palys T= 706-b/asoxr6INFERENCE RESULT fnduta | verpacitor /Snduchin Run) And alo te pilot the perfor charotewitic nue are duuen - Department of EEE, GCE, Bodinayakkanur Page 23BE 3272.) 'ASIC ELECTRICAL, ELECTRONICS AND INSTRUMENTATION ENGINEERING LABORATORY MANUAL, [Link]: c MEASUREMENT OF THREE PHASE POWER AND Date: . POWER FACTOR AIM To measure the three phase power and power factor using two wattmeter method in star connected load. APPARATUS REQIRED: ‘SLNo. ‘Apparatus Range ‘Quantity 1 Ammeter 0-10A MI iu 7 Voltmeter (0-60)V MI 1 3 Wattmeter ‘600V, 10A UPF 2 . 4 Auto transformer 2 ew 5 [Connecting wires = = FORMULA USED: Total Power P=, +I, ~ P=BV Icosé Power Factor Power Factor = cos’ © ~ Where , ; : : Wrepower in first wattmeter : W:-power in second wattmeter V=line voltage I-current nayakkanur Page 25 Department of EEE, GCE, BoCIRCUIT DIAGRAM FOR THREE PHASE POWER AND POWER FACTOR N ™~ AdN/vOT/A 009 2 pe * e a reer avbe qeasoayy he oe os e oA N “ @) (009-0) ou Adn/VOT/A 009 osTABULATION: Meg s)MFZe [Link]. | Voltage | Current Power (Watts) (Volts) | (Amps) Power | Total Factor | Power cos¢ Wi Ww W2 Wa (watts) obs act obs | act 1 |h4te lo |e |* |olo | 6 a 2 lhe |ts {76 |svol so kool 0-49 | 4¢0 |3- |41e | 3 | fo |ti20l}o |8eo| 0-47 | 2000 be | dip [309 | iGo |imbel tho [tive | 0.47 | ese S> | tip | £9 |270 |216¢|2ep|Iboo| o-9b | 3760 by Lalo 53d. [S10 PEO} 226 | (eho 0.96 | 320. MODEL CALCULATION: (Total owes Pw, 04 Iso SbO +hvo ti) Prg = tan’ on (eta) Agee Thal seBE 3272: BASIC ELECTRICAL, ELECTRONICS AND INSTRUMENTATION ENGINEERING LABORATORY MANUAL PROCEDURE: 1. Connections are made as per the circuit diagram. 2. Close the TPST sivitch. 3. By varying the 30 variac the rated voltage is applied. 4, Ato load note down the ammeter, voltmeter, wattmeter reading, 5. By varying the 30 resistive load in steps corresponding meters reading are noted. RESULT: ‘Page 27 TREE, GCE, Bodinayakkanur Department o!‘BE3Z72- BASIC ELECTRICAL, ELECTRONICS AND INSTRUMENTATION ENGINEERING LABORATORY MANUAL VERIFICATION OF OHM’S LAW AND KIRCHHOFF’S LAW AIM : To verify the Ohm’s law and Kirchhoff's lawby conducting a suitable experiment APPARATUS REQUIRED ‘[Link]. | EQUIPMENT RANGE TYPE QTY. NAME RPS 030V ‘Ammeter Voltmeter Resistance Box Bread board : I Connecting > ‘As required Wires alu] s|oofro] | OHM'Ss LAW ‘At constant temperature, current flowing through a conductor is directly proportional to the potential difference across the conductor. Where, V-Potential difference (Volts) I- Current (Amps) R- Resistance (Ohms) KIRCHOFF’S CURENT LAW ‘The sum of the currents flowing towards any junction-in an electric circuit is equal to the sum of the currents flowing away from the junction. For the given circuit KCL is 11 = 12413 KIRCHOFF’S VOLTAGE LAW In any closed circuit, the sum of the potential drops is equal to the sum of the potential rises or the algebraic sum of the voltages in a closed circuit/mesh is zero. For the given circuit KVL is V=V1+V2+V3 F Department of EEE, GCE, Bodinayakkanur Page 29CIRCUIT DIAGRAM FOR OHM’S LAW R WW ; eS CIR DIAGRAM FOR KIRCHHOFF’S, ST LAW R1 (9-100 mac R3 —W+@)= - Dili; : R2 be ® {0-100mame Es 4 ‘A>, (0-100mayMC (0-30) RPS CIRCUIT DIAGRAM FOR KIRCHHOFF’S VOLTAGE LAW: R12 , R2 +@)= “(2 \2 (030v)mc x {o-30vymc #4 \4 le | (0-30v)mc (0-30) RPSsol RS | ner Galatea Rotsbace 7 (ha) ae lok 2 lo q.@ oe 3 ts tye tol 5 Qo 1e-8 tog 5 | os 2ho Lo) caw | bet [tag | to BSc | aaa ead 1 a a - . 2 Jo wh Bays uy foi ee eel eo 5 25 14 6 Lu alee aoe 96. Kinenotf Yolbaye fawe | yer vellage | Talal Vollge Ve= Wt wry,(v) ao] ont ee ie : : ) | ed LO) Li) [trent Practical - Tel te 12 [4 ony ern a ic eee { a Bel 0 gq |g) [es | /2e os 4 | 25 eg | tor | 3.4 25 =a eales 1.2 | toed | At sabe aPROCEDURE: OHM’SLAW 1. Connections are made as per the circuit diagram 2. Switch on the RPS and vary the Resistance and note the corresponding Ammeter readings > for different values of resistance 3. Verify the following equation Current 1= V/R KIRCHHOFF’S CURRENT LAW 1. Connect the circuit as per the circuit diagram. 2. Switch on the supply. 3. Set different values of voltages in the RPS, 4, Measure the corresponding values of branch currents Ii, Izand Is. 5, Enter the readings in the tabular column. 6. Find the theoretical values and compare with the practical values ¥ Currents entering a node=E Currents leaving the node n=2+1B KIRCHHOFF’S VOLTAGE LAW 1. Connect the circuit as per the circuit diagram. 2. Switch on the supply. 3. Set different values of voltages in the RPS. 4, Measure the corresponding values of voltages (V1, [Link] V3) across r respectively. 5, Enter the readings in the tabular column. 6. Find the theoretical values and compare with the practical values. E Voltages in a closed loop = 0 : eee khe Kerchoffh cwent dows Aras dten vestepied Page 31 ‘Department of EEE, GCE,BE 3272- BASIC ELECTRICAL, ELECTRONICS AND INSTRUMENTATION ENGINEERING LABORATORY MANUAL CHARACTERISITCS OF PN JUNCTION DIODE AIM: To determine the forward and reverse bias V-I characteristics of PN-Junction diode APPARATUS REQUIRED S.No_|_Name of the Apparatus Range Type | Quantity 1__| PN junction diode ‘1N4007 e 1 2_| Resistor 1kQ = 1 3_|Breadboard = 5 1 4 [RPS (0-30)V/2A Dual 1 5__| Voltmeter (0-2)V, 0-30) V MC Each 6 | Ammeter (0-50) mA, (0-500)xA_[ MC Each 1 7 [Connecting wires - =| As required THEORY A PN junction diode is known as a semiconductor (or) crystal diode. The outstanding Property of a crystal diode is to conduct current in one direction only. Forward Biasing When the Anode is connected to positive supply and the Cathode is connected to negative supply, then the diode is called forward biased. When PN junction diode is forward biases, the potential barrier is reduced and at a forward voltage of (0.7v) itis eliminated altogether. The junction offers low resistance. Current flows in the circuit. Reverse Biasing To apply reverse bias, connect negative terminal of the supply to Anode and positive terminal of the supply to Cathode. In this biasing the potential barrier is increased. The junction offers very high resistance to current flow. No current flows in the circuit, Department of EEE, GCE, Bodinayakkanur Page 33Forward Bias Condition Diode IN4001_ (0—50mA) MC (0-2V)MC Reverse Bias Condition Diode IN4001 (0 —500pA) MC (0-30V) RPS. PIN CONFIGURATION OF PN JUNCTION DIODEBE3272- BASIC ELECTRI CTR ) INSTI T IN TORY M, ICAL, ELECTRONICS AND INSTRUMENTATION ENGINEERING LABORATORY. AN TABULATION 1: PN JUNCTION DIODE FORWARD BIAS. CHARACTERISTICS [Link] | FORWARD VOLTAGE (V) | FORWARD CURRENT (ma) (Vax) dx) | o 0 2 o-l g g Od 0 + Oe Or 5 0-8 ! 6 | 2 1 : c ev 1 lo r i 1S TABULATION 2: PN JUNCTION DIODE REVERSE BIAS CHARACTERISTICS [Link] REVERSE VOLTAGE (V) | REVERSE CURRENT (nA) “| (Vax) (la) 7 a) o Z o-s 4o 3 (-¢ Be 4. 2s ~~ p10 5. fo Deo 6. yes L 310 a 5-5 Abo G 6s 500PROCEDURE FOR PN JUNCTION DIOIDE Forward Bias Characteristics 1. The circuit connections are made as per circuit diagram. 2. For the various input voltages, the current through the PN junction diode and the voltage across the diode are noted down. 3. V-I characteristics is plotted and the dynamic resistance is calculated from the graph. Knee voltage is found from the graph. Reverse Bias Characteristics 1... The circuit connections are made as per circuit diagram. 2. For the various input voltages, the current through the PN junction diode and the voltage across the diode are noted down. 3. V-I characteristics is plotted. Reverse leakage current and reverse breakdown voltage are calculated from the graph. MODEL GRAPH FOR PN JUNCTION DIODE Reverse Brakedown Voltage Reverse Voltage in Volts ! Forward Voltage in Volts INFERENCE i). amic réxjstance = NR=AV/AK = ii). Satudation Current = iii). Cut-in Voltage a RESULT: Thus the charackeriics of ery junchén disde, - A & cuwe tee/ drawn ‘Nanartment of EEE. GCE. BodinayakkanurAIM: To determine the forward and reverse bias V-I characteristics of Zener diode APPARATUS REQUIRED [Link] | Name of the Apparatus Range Type | Quantity 1_| Zener Diode 1Z9.2 = 1 2 [Resistor TKO = 1 3__| Breadboard : : 1 4 [RPS (0-30)V/2A Dual 1 5__| Voltmeter (0-2)V, (0-10) V MC | Eachi 6 | Ammeter (0-50) mA, (0-500)nA_| MC | Each 7 | Connecting wires = : ‘As requiredForward Bias ConditionTABULATION 1: PN JUNCTION DIODE FORWARD BIAS CHARACTERISTICS [Link] _ | FORWARD VOLTAGE (V) FORWARD CURRENT (mA) (Vax) . (lax) ! O85 ° 2 Ob O58 3. O.b 2.5 hy od 6 » od V5 6 al lo 2 + on 2 &- oO 1 TABULATION 2: PN JUNCTION DIODE REVERSE BIAS CHARACTERISTICS REVERSE VOLTAGE (V) REVERSE CURRENT (nA) (Vax) (-la) [Link] O2 0.0 o.0 ° 1 2 Sy 2 re 0:2 b a 4 4 q 6-2. 25 5 45 g. =| x} of ef ele} yy oo 2MODEL GRAPH FOR ZENER DIODE v, (volts) (vorts) ve(velts) PROCEDURE Forward Bias Characteristics 1. The circuit connections are made as per circuit diagram. 2. For the various input voltages, the current through the Zener diode and the voltage across the diode are noted down. 3. V-l characteristics is plotted and the dynamic resistance is calculated from the graph. Knee voltage is found from the graph. Reverse Bias Characteristics 1. The circuit connections are made as per circuit diagram. 2 For the various input voltages, the current through the Zener diode and the voltage across the diode are noted down. 3, Vel characteristics is plotted. Reverse leakage current and reverse breakdown voltage are calculated from the graph. FERENCE u i). Dynamic resistance = R=AVdAlr ii), Reverse Saturation Current = iii), Cut-in Voltage RESULT: Shun th. untaberthit Uh Terev -cltede eRe Ayan. Page 39 ‘Department of EEE, GCE, ‘BodinayakkanurE9272. BASIC ELECTRICAL, ELECTRONICS AND INSTRUMENTATION ENGINEERING LABORATORY MANUAL CHARACTERISITCS OF CE CONFIGURATIONS OF BJT To plot the input and output characteristics of NPN bipolar junction Transistor under CE Configuration and determine its hybrid parameters APPARATUS REQUIRED [Link] | Name of the Apparatus Range Type | Quantity 1. | Transistor - BCIO7 1 2. | Resistor 1kO,10KO = 1 3. | Breadboard é a 1 4, | Connecting wires - - ‘As required 5. | Ammeter (0-10mA),(0-2001A) | MC 1 6. | Voltmeter (030V),(0-1V) MC 1 7, | Regulated Power Supply | (0-30V)/2A Dual 1 FORMULA Input characteristics dy, (i) Input resistance (hie) = a IVce —Constant = Wee (ii) Output resistance (hoe) => |Ip —Constant (iii) Forward current gain (hie) eae |Vce —Constant = {ae |1, Constant (iv) Reverse voltage gain (hs) rm- TORY MANUAL CIRCUIT DIAGRAM OF BJT (CE CONFIGURATION) (0-10)mA 1KO (0-200) HA PIN CONFIGURATION OF BJT B Bottom View BC107 ‘Specification: BG107/50V/0.1A.0.3W.300MHz EY c MODEL GRAPH OUTPUT CHARACTERISTICS INPUT CHARACTERISTICS HA Suunen regan L emery / 'e Voe= 0V Vee=5V 0 bee: Pade 6 Vaee(V) LAPD RPM RDAADDPDPNKMPPMPMRPMPDAKRHPHRPNHHPHRHPRA Dy‘BE 3272- BASIC ELECTRICAL, ELECTRONICS AND INSTRUMENTATION ENGINEERING LABORATORY MANUAL TABULATION 1. INPUT CHARACTERISTICS Vee =* Volts Va= vars [Link] Voe(Volts) To(WA) | Vee (Volts) | tp (uA) ! oe. © © © 2 Os 2 oO» b 3 0-6 30 ob 20 + 0-7 aS od 7 a 0-8 Re 0.8 qo ¢ 0-4 My 0-4 102 1 J L4G tl (ho Q po 12 red 10 a tet 194 rp. 2 2oo: TABULATION 2. OUTPUT CHARACTERISTICS =F pA Is= pA [Link] “a wy) Tc (WA) Vce_(V) Tc (WA) ) _o 6 6 © 2. ! os ! OS 3 a ! 2 Z 4 3 Ll 2 z 5 & ! ye b x i = 2 1 b ! b 2 8 1 ! 7 2 4 a ! g 19 4 ' 4 2.BE 9272. BASIC ELECTRICAL, ELECTRONICS AND INSTRUMENTATION ENGINEERING LABORATORY: MANUAL PROCEDURE 1. Make the circuit for CE configuration: Connect all the voltmeters & Ammeters. 2. Input characteristics a. Keep Vce (P2) constant, change PI note Is & Vee. b. Repeat the same procedure for different values of Vee. c. Plot the input curve between Ip & Vrs for different values of Ver. d. Find out the dynamic input resistance from curve plotted. 3. Output characteristics a. Keep IB constant (by setting P1) change P2 note Ic & Vcr. b. Repeat the same procedure for different values of Ip. c. Plot the output curve'between Ic & Vee for different values of Is. : d. Find out the dynamic output resistance, DC current gain & AC current gain using the formulae. INFERENCE: a = 2 a e 1 (i) (ii) Forward curemtgain (he) a (iv) Reverse voltage gain (hx) RESULT:BE 3272- BASIC ELECTRICAL, ELECTRONICS AND INSTRUMENTATION ENGINEERING LABORATORY MANUAL CHARACTERISITCS OF MOSFET i) — Toobtain the Output characteristics of MOSFET. ii) To obtain the transfer characteristics of MOSFET and also find the cut off voltage. APPARATUS REQUIRED [Link] Name of the Apparatus Range Type | Quantity T MOSFET = IRF740 1 2. Resistor 1KQ variable 1 3. Breadboard - 7 1 4 RPS. (0-30)V/2A. = Dual 2 3 Voltmeter O30V MC 2 6. ‘Ammeter (0-10)mA MC 1 7. ‘Connecting wires = ‘As. requiredCIRCUIT DIAGRAM FOR CHARACTERISTICS OF MOSFET (0-10)mA MC \ (0:30)V Mi 2 (0-30V)2A uo ae ooy(¥) me osWk 2 (0-30V)2A) RPS Gs PIN CONFIGURATION OF MOSFETTABULATION 1. OUTPUT CHARACTERISTICS OF MOSFET ce Vos cn e ee : Vs (V) a at * fop fer | os | oF * J) oe fot | 07 | os * [a | oe | te | be : OE Oo -g 2.) 17 i: 1-8 oR 2:0 L7 7 os o-8 34 17 a D8 O68 3. Qh ia 10. : S$ 0 8 Output Characteristics of MOSFET Transfer Characteristics of MOSFET ve Ne Vole Ym VolePROCEDURE OUTPUT CHARACTERISTICS 1. Make the circuit connections as per the circuit diagram. 2. Switch on the 230V AC supply through the two-pin power cord. - 3. Keep the Gate-Source voltage (Ves) at a particular voltage by varying pot. 4, Smoothly vary the Drain-Source voltage (Vos) till the MOSFET gets turn ON and fiote down the voltmeter, ammeter readings and tabulate. 5. Further increase the Drain-Source voltage (Vos) and note the current Ip. 6. For different values of Gate-Source voltage (Vs), note down the readings. 7. Draw the graph of Ip versus Vos. Using the graph find out the pinch-off voltage. TRANSFER CHARACTERISTICS Make the circuit connections as per the circuit diagram. ‘Switch on the 230V AC supply through the two pin power cord. Keep the Drain-Source voltage (Vos) at a particular voltage by varying pot. Smoothly vary the Gate-Source voltage (Ves) till the MOSFET gets tum on. and note down voltmeter, ammeter readings and tabulate. Further increase the Gate-Source voltage (Vos) and note the current Ip, 5. For different values of Drain-Source voltage (Vps), note down the readings and draw the graph of Ip versus Vos, 6. From the graph find out the threshold voltage. pepo =TABULATION 2 TRANSFER CHARACTERISTICS OF Vos= (V¥) 2s [Link] | Va W) lb (mA) 1. Is e r 2. 2b o:) 3. 27 0:2 4. 2 4 | 7 el 2-48 ED?) 6. 3-10 ee 3 7. 3-3 2 ah 8. a+ 24. 9. 3-8 7 10.AIM ‘ ‘To obtain the anode forward conduction characteristics including the measurement of holding and latching currents. APPARATUS REQUIRED SNo | Name of the Apparatus Range Type ‘Quantity T_ [SCR > NEC 2P4MPO9 T 2 : (0-25mA) MC T : Amrieter (0-50HA) MC ii 3__| Voltmeter (30) MC 1 4 | Dual RPS (W30VV2A = 2 3 _| Resistor T0OKO, 1KQ Each 1 6. _| Breadboard = , T 7, _| Connecting Wires = - ‘As required THEORY ‘SCR is a four layer three terminal device in which the end P- layer act as anode (A), the end N - layer ‘act as cathode (K) and P-layer nearer to cathode act as gate (G). As leakage current in silicon is very small compared to germanium, SCR are made of silicon and not germanium. SCR converts AC to DC and at the same time it controls the amount of power fed to the load. Thus the ‘SCR combines the features of rectifier and transistor. Hence itis called Silicon Controlled rectifier (SCR). An ‘SCR has two states ie. either it doesn't conduct or conducts heavily; there is n state in between these two states, Therefore SCR behaves like a switch. It conducts the current in forward direction only, like a rectifier diode. Therefore SCR is a unidirectional semiconductor device.SCR CHARACTERISTICS 1KQ A Pin configuration of SCR NEC 2PaMPO9TABULATION [Forward Conduction] Gate Current (Ic) =3-| pA [Link] Anode —Cathode Anode Current Voltage Vax (Volts) 1a (mA) 1. 0.5 0-1 2. O.b ol? . 0-7 0.15 \ +18 | BE oO: 6 0.2 7 O,b2 Oo. 7 oO. bk o- 5 8. oO. 4% o- ( 9. 10.MODEL GRAPH Forward conduction +Ia (on state) Amp} Latching current Holding current I¢3 > Te2 > Tet Reverse leakage current Sieg ey Iceo Vea i +VaK - Veo Forward leakage Forward blocking current Vgo=Forward breakover voltage Var=Reverse breakover voltage Reverses blocking Ic= Gate currentPROCEDURE 1) Connections are made as per the circuit diagram. : 2) Switch ON the power supply and set Ic to a constant value and vary the Vak. 3) Note down the ammeter (a) and voltmeter(Vax) readings. 4) The same procedure is repeated for various values of Ic. 5) Find out break over(Var) voltage and latching current (Ia) 6) Plot the graph between Vax and Ia, RESULT