Technische Information / Technical Information
IGBT-Module
IGBT-Modules FB20R06KL4
Vorläufig
Preliminary
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Diode Gleichrichter/ Diode Rectifier
Periodische Rückw. Spitzensperrspannung
Tvj =25°C VRRM 800 V
repetitive peak reverse voltage
Durchlaßstrom Grenzeffektivwert pro Chip
TC =80°C IFRMSM 58 A
RMS forward current per chip
Gleichrichter Ausgang Grenzeffektivstrom
TC =80°C IRMSmax 96 A
maximum RMS current at Rectifier output
Stoßstrom Grenzwert tP = 10 ms, T vj = 25°C IFSM 448 A
surge forward current tP = 10 ms, T vj = 150°C 358 A
2
Grenzlastintegral tP = 10 ms, T vj = 25°C I t 1000 A2 s
I2t - value tP = 10 ms, T vj = 150°C 642 A2 s
Transistor Wechselrichter/ Transistor Inverter
Kollektor-Emitter-Sperrspannung
Tvj =25°C VCES 600 V
collector-emitter voltage
Kollektor-Dauergleichstrom TC = 65°C IC,nom. 20 A
DC-collector current TC = 25 °C IC 25 A
Periodischer Kollektor Spitzenstrom
tP = 1 ms, T C =65°C ICRM 40 A
repetitive peak collector current
Gesamt-Verlustleistung
TC = 25°C Ptot 80 W
total power dissipation
Gate-Emitter-Spitzenspannung
VGES +/- 20V V
gate-emitter peak voltage
Diode Wechselrichter/ Diode Inverter
Dauergleichstrom
IF 20 A
DC forward current
Periodischer Spitzenstrom
tP = 1 ms IFRM 40 A
repetitive peak forw. current
Grenzlastintegral 2
2 VR = 0V, t p = 10ms, T vj = 125°C I t 62 A2 s
I t - value
prepared by: Thomas Passe date of publication: 2002-02-27
approved by: Ingo Graf revision: 5
1(11)
Technische Information / Technical Information
IGBT-Module
IGBT-Modules FB20R06KL4
Vorläufig
Preliminary
Modul Isolation/ Module Isolation
Isolations-Prüfspannung RMS, f = 50 Hz, t = 1 min.
VISOL 2,5 kV
insulation test voltage NTC connected to Baseplate
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Diode Gleichrichter/ Diode Rectifier min. typ. max.
Durchlaßspannung
Tvj = 150°C, I F = 20 A VF - 0,85 - V
forward voltage
Schleusenspannung
Tvj = 150°C V(TO) - 0,63 - V
threshold voltage
Ersatzwiderstand
Tvj = 150°C rT - 10 - mW
slope resistance
Sperrstrom
Tvj = 150°C, V R = 800 V IR - 5 - mA
reverse current
Modul Leitungswiderstand, Anschlüsse-Chip
TC = 25°C RAA'+CC' - 4 - mW
lead resistance, terminals-chip
Transistor Wechselrichter/ Transistor Inverter min. typ. max.
Kollektor-Emitter Sättigungsspannung VGE = 15V, T vj = 25°C, I C = 20 A VCE sat - 1,95 2,55 V
collector-emitter saturation voltage VGE = 15V, T vj = 125°C, I C = 20 A - 2,2 - V
Gate-Schwellenspannung
VCE = VGE, Tvj = 25°C, I C = 0,5mA VGE(TO) 4,5 5,5 6,5 V
gate threshold voltage
Eingangskapazität f = 1MHz, Tvj = 25°C
Cies - 1,1 - nF
input capacitance VCE = 25 V, V GE = 0 V
Kollektor-Emitter Reststrom
VGE = 0V, Tvj = 125°C, VCE = 600V ICES - 5,0 - mA
collector-emitter cut-off current
Gate-Emitter Reststrom
VCE = 0V, V GE =20V, Tvj =25°C IGES - - 400 nA
gate-emitter leakage current
Einschaltverzögerungszeit (ind. Last) IC = INenn, V CC = 300 V
turn on delay time (inductive load) VGE = ±15V, Tvj = 25°C, R G = 47 Ohm td,on - 22 - ns
VGE = ±15V, Tvj = 125°C, R G = 47 Ohm - 31 - ns
Anstiegszeit (induktive Last) IC = INenn, V CC = 300 V
rise time (inductive load) VGE = ±15V, Tvj = 25°C, R G = 47 Ohm tr - 23 - ns
VGE = ±15V, Tvj = 125°C, R G = 47 Ohm - 37 - ns
Abschaltverzögerungszeit (ind. Last) IC = INenn, V CC = 300 V
turn off delay time (inductive load) VGE = ±15V, Tvj = 25°C, R G = 47 Ohm td,off - 143 - ns
VGE = ±15V, Tvj = 125°C, R G = 47 Ohm - 154 - ns
Fallzeit (induktive Last) IC = INenn, V CC = 300 V
fall time (inductive load) VGE = ±15V, Tvj = 25°C, R G = 47 Ohm tf - 22 - ns
VGE = ±15V, Tvj = 125°C, R G = 47 Ohm - 38 - ns
Einschaltverlustenergie pro Puls IC = INenn, V CC = 300 V
turn-on energy loss per pulse VGE = ±15V, Tvj = 125°C, R G = 47 Ohm Eon - 0,73 - mWs
L S = 80 nH
Abschaltverlustenergie pro Puls IC = INenn, V CC = 300 V
turn-off energy loss per pulse VGE = ±15V, Tvj = 125°C, R G = 47 Ohm Eoff - 0,56 - mWs
L S = 80 nH
Kurzschlußverhalten tP £ 10µs, V GE £ 15V, RG = 47 Ohm
SC Data Tvj£125°C, VCC = 360 V ISC - 80 - A
2(11)
Technische Information / Technical Information
IGBT-Module
IGBT-Modules FB20R06KL4
Vorläufig
Preliminary
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
min. typ. max.
Modulinduktivität
LsCE - - 40 nH
stray inductance module
Modul Leitungswiderstand, Anschlüsse-Chip
TC = 25°C RCC'+EE' - 13 - mW
lead resistance, terminals-chip
Diode Wechselrichter/ Diode Inverter min. typ. max.
Durchlaßspannung VGE = 0V, Tvj = 25°C, I F = 20 A VF - 1,7 2,15 V
forward voltage VGE = 0V, Tvj = 125°C, I F = 20 A - 1,7 - V
Rückstromspitze IF=INenn, - diF/dt = 1000 A/us
peak reverse recovery current VGE = -10V, Tvj = 25°C, V R = 300 V IRM - 20 - A
VGE = -10V, Tvj = 125°C, V R = 300 V - 23 - A
Sperrverzögerungsladung IF=INenn, - diF/dt = 1000 A/us
recovered charge VGE = -10V, Tvj = 25°C, V R = 300 V Qr - 1 - µAs
VGE = -10V, Tvj = 125°C, V R = 300 V - 1,7 - µAs
Abschaltenergie pro Puls IF=INenn, - diF/dt = 1000 A/us
reverse recovery energy VGE = -10V, Tvj = 25°C, V R = 300 V Erec - 0,2 - mWs
VGE = -10V, Tvj = 125°C, V R = 300 V - 0,35 - mWs
NTC-Widerstand/ NTC-Thermistor min. typ. max.
Nennwiderstand TC = 25°C R25 - 5 - kW
Abweichung von R100
deviation of R100 TC = 100°C, R 100 = 493 W DR/R -5 5 %
Verlustleistung TC = 25°C P25 20 mW
power dissipation
B-Wert
R2 = R1 exp [B(1/T2 - 1/T1)] B25/50 3375 K
B-value
3(11)
Technische Information / Technical Information
IGBT-Module
IGBT-Modules FB20R06KL4
Vorläufig
Preliminary
Thermische Eigenschaften / Thermal properties
min. typ. max.
Innerer Wärmewiderstand Gleichr. Diode/ Rectif. Diode lPaste=1W/m*K RthJH - 1,1 - K/W
thermal resistance, junction to heatsink Trans. Wechsr./ Trans. Inverter lgrease =1W/m*K - 1,8 - K/W
Diode Wechsr./ Diode Inverter - 3,7 - K/W
Innerer Wärmewiderstand Gleichr. Diode/ Rectif. Diode RthJC - - 1 K/W
thermal resistance, junction to case
Trans. Wechsr./ Trans. Inverter - - 1,6 K/W
Diode Wechsr./ Diode Inverter - - 2,7 K/W
Übergangs-Wärmewiderstand Gleichr. Diode/ Rectif. Diode lPaste=1W/m*K RthCH - 0,2 - K/W
thermal resistance, case to heatsink
Trans. Wechsr./ Trans. Inverter lgrease =1W/m*K - 0,4 - K/W
Diode Wechsr./ Diode Inverter - 1,3 - K/W
Höchstzulässige Sperrschichttemperatur
Tvj - - 150 °C
maximum junction temperature
Betriebstemperatur
Top -40 - 125 °C
operation temperature
Lagertemperatur
Tstg -40 - 125 °C
storage temperature
Mechanische Eigenschaften / Mechanical properties
Innere Isolation
Al2O3
internal insulation
CTI
225
comperative tracking index
Anpreßkraft f. mech. Befestigung pro Feder F N
40...80
mounting force per clamp
Gewicht
G 36 g
weight
Kontakt - Kühlkörper
Kriechstrecke
terminal to heatsink 13,5 mm
creeping distance
Luftstrecke
12 mm
clearance
Terminal - Terminal
Kriechstrecke
terminal to terminal 7,5 mm
creeping distance
Luftstrecke
7,5 mm
clearance
4(11)
Technische Information / Technical Information
IGBT-Module
IGBT-Modules FB20R06KL4
Vorläufig
Preliminary
Ausgangskennlinienfeld Wechselr. (typisch) IC = f (VCE)
Output characteristic Inverter (typical) VGE = 15 V
40
35 Tj = 25°C
Tj = 125°C
30
25
IC [A]
20
15
10
0
0,00 0,50 1,00 1,50 2,00 2,50 3,00 3,50 4,00 4,50 5,00
VCE [V]
Ausgangskennlinienfeld Wechselr. (typisch) IC = f (VCE)
Output characteristic Inverter (typical) T vj = 125°C
40
35 VGE = 8V
VGE = 9V
30
VGE = 10V
25 Vge=12V
Vge=15V
IC [A]
20
Vge=20V
15
10
0
0,00 0,50 1,00 1,50 2,00 2,50 3,00 3,50 4,00 4,50 5,00
VCE [V]
5(11)
Technische Information / Technical Information
IGBT-Module
IGBT-Modules FB20R06KL4
Vorläufig
Preliminary
Übertragungscharakteristik Wechselr. (typisch) IC = f (VGE)
Transfer characteristic Inverter (typical) VCE = 20 V
40
Tj = 25°C
35
Tj = 125°C
30
25
IC [A]
20
15
10
0
5,00 6,00 7,00 8,00 9,00 10,00 11,00 12,00
VGE [V]
Durchlaßkennlinie der Freilaufdiode Wechselr. (typisch) IF = f (VF)
Forward characteristic of FWD Inverter (typical)
40
Tj = 25°C
35 Tj = 125°C
30
25
IF [A]
20
15
10
0
0,00 0,50 1,00 1,50 2,00 2,50 3,00
VF [V]
6(11)
Technische Information / Technical Information
IGBT-Module
IGBT-Modules FB20R06KL4
Vorläufig
Preliminary
Schaltverluste Wechselr. (typisch) Eon = f (IC), Eoff = f (IC), Erec = f (IC) VCC = 300 V
Switching losses Inverter (typical) T j = 125°C, V GE = ±15 V, R Gon = RGoff = 47 Ohm
Eon
2,5 Eoff
Erec
2
E [mWs]
1,5
0,5
0
0 5 10 15 20 25 30 35 40 45
IC [A]
Schaltverluste Wechselr. (typisch) Eon = f (RG), Eoff = f (RG), Erec = f (RG)
Switching losses Inverter (typical) T j = 125°C, V GE = +-15 V , I c = Inenn , V CC = 300 V
Eon
2,5 Eoff
Erec
2
E [mWs]
1,5
0,5
0
40 50 60 70 80 90 100 110 120
RG [W]
7(11)
Technische Information / Technical Information
IGBT-Module
IGBT-Modules FB20R06KL4
Vorläufig
Preliminary
Transienter Wärmewiderstand Wechselr. ZthJH = f (t)
Transient thermal impedance Inverter
10,000
Zth-IGBT
Zth-FWD
ZthJH [K/W]
1,000
i 1 2 3 4
IGBT: ri [K/W]: 118,66e-3 592,55e-3 464,26e-3 624,52e-3
ti [s]: 3e-6 79,74e-3 10,28e-3 226,61e-3
FWD: r i [K/W]: 245,4e-3 1,22 956,8e-3 1,27
ti [s]: 3e-6 80,4e-3 10,35e-3 227,3e-3
0,100
0,001 0,01 0,1 1 10
t [s]
Sicherer Arbeitsbereich Wechselr. (RBSOA) IC = f (VCE)
Reverse bias save operating area Inverter (RBSOA)Tvj = 125°C, V GE = ±15V, R G = 47 Ohm
45
40
35
IC,Modul
30 IC,Chip
25
IC [A]
20
15
10
0
0 100 200 300 400 500 600 700
VCE [V]
8(11)
Technische Information / Technical Information
IGBT-Module
IGBT-Modules FB20R06KL4
Vorläufig
Preliminary
Durchlaßkennlinie der Gleichrichterdiode (typisch) IF = f (VF)
Forward characteristic of Rectifier Diode (typical)
40
Tj = 25°C
35
Tj = 150°C
30
25
IF [A]
20
15
10
0
0,00 0,20 0,40 0,60 0,80 1,00 1,20
VF [V]
NTC- Temperaturkennlinie (typisch) R = f (T)
NTC- temperature characteristic (typical)
100000
Rtyp
10000
R[W]
1000
100
0 20 40 60 80 100 120 140
TC [°C]
9(11)
Technische Information / Technical Information
IGBT-Module
IGBT-Modules FB20R06KL4
Vorläufig
Preliminary
Schaltplan/ Circuit diagram
Gehäuseabmessungen/ Package outlines
Bohrplan /
drilling layout
10(11)
Technische Information / Technical Information
IGBT-Module
IGBT-Modules FB20R06KL4
Gehäuseabmessungen Forts. / Package outlines contd.
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine
Eigenschaften zugesichert. Diese gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is
valid in combination with the belonging technical notes.
11(11)
Terms & Conditions of Usage
Attention
The present product data is exclusively subscribed to technically experienced
staff. This Data Sheet is describing the specification of the products for which a
warranty is granted exclusively pursuant the terms and conditions of the supply
agreement. There will be no guarantee of any kind for the product and its
specifications. Changes to the Data Sheet are reserved.
You and your technical departments will have to evaluate the suitability of the
product for the intended application and the completeness of the product data
with respect to such application. Should you require product information in
excess of the data given in the Data Sheet, please contact your local Sales Office
via “[Link] / sales & contact”.
Warning
Due to technical requirements the products may contain dangerous substances.
For information on the types in question please contact your local Sales Office via
“[Link] / sales & contact”.